FEATURES High Voltage Operation : VDS=V High Power :.5dBm (typ.) @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6ghz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with V operation, and gives you higher gain. This new product is ideally suited for use in 1.5GHz W-CDMA & LTE design requirements as it offers high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V Drain-Source Voltage VDS VGS=-8V 16 V Gate-Source Voltage VGS -15 V Total Power Dissipation Pt 97.8 W Storage Temperature Tstg -65 to +175 deg.c Channel Temperature Tch 2 deg.c RECOMMENDED OPERATING CONDITION Item Symbol Condition Limit Unit DC Input Voltage VDS < 55 V Forward Gate Current IGF RG=5 ohm < 12 ma Reverse Gate Current IGR RG=5 ohm > -3.9 ma Channel Temperature Tch < 18 deg.c Average Output Power Pave. < 47.5 dbm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Symbol Condition Limit Unit Min. Typ. Max. Pinch-Off Voltage Vp VDS=V IDS=27.2mA -1. -1.5-2. V Saturated Power Psat *1 VDS=V 49.5.5 - dbm Drain Efficiency hd *2 IDS(DC)=mA 28 33 - % Power Gain Gp *2 f=1.6ghz 18 19 - db Thermal Resistance Rth Channel to Case - 2. 2.3 deg.c/w *1 : 1%-duty RF pulse (DC supply constant) *2 : Pout = 42.5dBm, CW modulation Signal (W-CDMA) at 52.5W P DC RoHS COMPLIANCE Yes 1
Output Power [dbm] Output Power [dbm] Drain Efficiency [%] RF characteristics @f=1.6ghz fine tuned 54 Output Power vs. Frequency VDS=V, IDS(DC)=mA Output Power and Drain Efficiency vs. Input Power VDS=V, IDS(DC)=mA, f=1.6ghz 54 1 52 52 9 8 48 48 7 46 46 6 44 44 42 42 38 38 36 36 1 34 1.45 1. 1.55 1.6 1.65 1.7 1.75 Frequency [GHz] Pin=dBm Pin=24dBm Pin=28dBm Pin=32dBm Pin=34dBm 34 19 21 23 25 27 29 31 33 35 Input Power [dbm] Pout (AB class) Pout (class B) Nd (class B) Pulse Signal (1%-duty, DC : constant) Test Fixture VGS VDS 2
MTTF (Hour) MTTF Calculation Estimated MTTF 1.E+1 1.E+9 1.E+8 1.E+7 1.E+6 1.E+5 1.E+4 1.E+3 1 1 16 18 2 2 26 Channel Temerature (deg-c) Ea=1.6eV Confidence Level=9% Channel Temp (deg-c) MTTF (Hours) 16 4.5 x 1 7 18 6.7 x 1 6 1.7 x 1 6 AF=exp[(-Ea/k)(1/T stress -1/T use ) MTTF use =MTTF stress *AF Where; AF: acceleration factor Ea: activation energy (1.6 ev) k: Boltzman s constant (8.62 x 1-5 ev/k) T stress : stress temperature (K) T use : use temperature (K) ESD characteristic Test Methodology Human Body Model (per JESD22-A114) Machine Model (per JEIA/ESD22-A115) Class 1A A 3
1. 8. 6. 4. 2-1 1 -. 2 -. 4 -. 6 -. 8-1 1.75.5.25-1 -.75 -.5 -.25.25.5.75 1 Scale for S12 -.25 -.5 -.75-1 S-Parameters @VDS=V, IDS(DC)=mA, f=.5 to4.5ghz Zl = Zs = ohm Marker : 1.6GHz - Reference DATA - +j ±18 +j25 S11 S22 -j25 Scale for S21 +j1 -j +9 S12 -j1 S11 S22 S21 Freq. S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG..93 178.19 7.4 54.8.5-4.93.47-142.69.6.92 175.95 5.83 47.31.5-3.55.52-144.79.7.92 173.65 5.7..5 -.79.57-147.2.8.92 171.75 4.47 33.96.5 -.42.61-149..9.92 169.8 4.8 27.41.5 2.93.65-152.3 1..9 167.74 3.85.49.5 5.77.68-154.35 1.1.89 165.41 3.7 13.56.5 7.86.71-156.43 1..88 163.26 3.66 5.8.5 12.46.74-158.51 1..86 16.36 3.76-3.5.6 9.3.76-16.33 1..81 158. 3.97-14.11.6 6.85.79-161.62 1..73 156.17 4.35-29.41.7-4.88.83-162.82 1.6.62 159.87 4.63-51.3.7-24.98.87-164.96 1.7.59 173.82 4.44-78.55.6-51.43.92-168.44 1.8.72-177.87 3.52-15.63.4-84.6.93-172.87 1.9.83-179.77 2.54-125.84.2-129.39.92-175.94 2..9 176.85 1.81-139.83.1 168..92-177.82 2.1.93 173.61 1.33-149.73.2 123.33.92-179.69 2..94 17.97 1. -156.7.3 14.12.91 179.26 2..95 168.6.78-162.75.3 94.17.91 178.2 2..96 166.62.62-167.67.4 9.46.91 176.97 2..96 164.93. -171.51.5 86.35.91 175.86 2.6.97 163.29.41-176.26.6 82.64.92 174.65 2.7.97 161.89.35-179.53.6 83.49.92 173.62 2.8.97 16.32.29 176.53.7 77.21.92 172.53 2.9.97 159.31.25 173.78.7 79.98.92 171.64 3..97 157.89.22 17.39.7 79.64.93 17.81 3.1.97 156.86.19 167.79.8 78.29.92 169.55 3..97 155.17.17 164.1.8 78.99.92 168.78 3..97 154.1.15 16.67.9 77.11.93 167.82 3..97 152.37.13 159.19.9 77.58.93 166.82 3..97 151.7.12 155.47.1 79.52.93 165.85 3.6.97 149.56.11 151.47.11 78.79.93 164.81 3.7.96 148.9.1 148.14.11 77.35.93 163.96 3.8.96 146.57.9 144.9.13 78.64.93 163.2 3.9.96 145.8.9 141.8.14 78.82.93 161.94 4..96 143.21.8 136.84.16 76.52.93 16.93 4.1.95 141.9.8 132.38.17 73.28.93 16.23 4..96 139.47.7 132.9.19 72.83.92 159.16 4..95 138.1.7 121.79. 67..92 158.11 4..95 135.75.7 116.37.21 63.7.92 156.67 4..95 133.94.6 113.7.23 6.77.92 155.78.4-9 S21 S12 4
- Application DATA - Doherty Amplifier drawing Vgg-Peak Vdd-Peak RF Output RF Input CS-3376C t=.8mm, r=3.3 Vgg-Main Vdd-Main Test Fixture Risho Kogyo CS-3376C r=3.5 (3.3 at 1GHz) t=.8mm 1 x2 Rohm MCR18EZPJ11 SOSHIN GSC3-HYB14 1 x2 Rohm MCR18EZPJ11 1pFx2 Murata GRM1882C1H1J 1pF MURATA TZY2Z1A1 1pF MURATA TZY2Z1A1 2pF Murata GQM1882C2A2RB 1.5pF Murata GQM1882C2A1R5B 1pFx2 MURATA TZY2Z1A1 2pF Murata GQM1882C2A2RB 5.1 Rohm MCR1EZPJ5R1 39 F NIPPON CHEMI-CON EKZE11ELL39MH15D 1pF Murata GRM2192C2A12J 1pF ATC ATC1B1RBW 1pFx2 ATC ATC1B1JW MURATA TZW4Z1R5A1 1pFx2 ATC ATC1B1JW 1 Rohm MCR3EZPJ11 1pF Murata GRM1882C1H1J 1pFx2 Murata GRM1882C1H1J 1.5G-IN 1pFx2 Murata GRM1882C1H1J 1pF Murata GRM188B11H12K.1 F Murata GRM188B31H14K 4.7 F Murata GRM55ER72A475K 1 Fx2 TDK C57X7R2E15M 4.7 F Murata GRM55ER72A475K 1.5G-OUT 5
ACLR [dbc] Drain Efficiency [%] ACLR [dbc] Drain Efficiency [%] Output Power [dbm], Gain [db] Drain Efficiency [%] Output Power [dbm] - Application DATA - Doherty Amplifier characteristics Test conditions : Vds=V, Ids-main=mA, Vgs-peak=-3.5V, Pulse Duty : 1% (12us/1us) 55 45 f=1.488ghz 9 8 7 6 54 53 52 51 Psat Pin=36dBm 35 49 48 Pin=34dBm 25 47 46 45 Pin=32dBm Pin=dBm 15 1 44 Pin=28dBm 1 19 21 23 25 27 29 31 33 35 37 39 41 Input Power [dbm] 43 146 147 148 149 1 151 15 Frequency [MHz] - -25 - -35 - -45 - -55-6 -65 Test conditions : Vds=V, Ids-main=mA, Vgs-peak=-3. 5V W-CDMA 2-carrier, 5MHz Spacing, PAR=7.8dB(.1%), f1=1485.5mhz, f2=149.5mhz DPD off DPD on +/-5MHz +/-1MHz 37 38 39 41 42 43 44 45 46 47 48 Output Power Avg. [dbm] +/-5MHz +/-1MHz 9 8 7 6 1-15 - -25 - -35 - -45 - -55-6 -65 DPD off DPD on Ave.Pout=45dBm 146 147 148 149 1 151 15 2-Carrier Center Freq. [MHz] +/-5MHz +/-1MHz +/-5MHz +/-1MHz 75 7 65 6 55 45 35 25 6
MK Package Outline Metal-Ceramic Hermetic Package 7
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