A3988. Quad DMOS Full Bridge PWM Motor Driver. Packages

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FEATURES AND BENEFITS 36 V output rating 4 full bridges Dual stepper motor driver High current outputs 3.3 and 5 V compatible logic supply Synchronous rectification Internal undervoltage lockout (UVLO) Thermal shutdown circuitry rossover-current protection Low profile QFN package Packages Package EV, 36 pin QFN.9 mm nominal height with exposed thermal pad Approximate scale DESRIPTION The A3988 is a quad DMOS full-bridge driver capable of driving up to two stepper motors or four D motors. Each full-bridge output is rated up to 1.2 A and 36 V. The A3988 includes fixed off-time pulse width modulation (PWM) current regulators, along with 2- bit nonlinear DAs (digital-to-analog converters) that allow stepper motors to be controlled in full, half, and quarter steps, and D motors in forward, reverse, and coast modes. The PWM current regulator uses the Allegro patented mixed decay mode for reduced audible motor noise, increased step accuracy, and reduced power dissipation. Internal synchronous rectification control circuitry is provided to improve power dissipation during PWM operation. Protection features include thermal shutdown with hysteresis, undervoltage lockout (UVLO) and crossover current protection. Special power up sequencing is not required. The A3988 is supplied in two packages, EV and JP, with exposed power tabs for enhanced thermal performance. The EV is a 6 mm x 6 mm, 36 pin QFN package with a nominal overall package height of.9 mm. The JP is a 7 mm 7 mm 48 pin LQFP. Both packages are lead (Pb) free, with 1% matte tin leadframe plating. Package JP, 48 pin LQFP with exposed thermal pad.1 µf.1 µf V MOTOR 32 V P1 P2 VP VBB1 VBB2 1 µf.22 µf Microprocessor V REF V DD 3.3 V PHASE1 I1 I11 PHASE2 I2 I12 PHASE3 I3 I13 PHASE4 I4 I14 VREF1 VREF2 VREF3 VREF4 VDD A3988 OUT1A OUT1B OUT2A OUT2B OUT3A OUT3B OUT4A OUT4B SENSE2 SENSE1 SENSE3 SENSE4 Bipolar Stepper Motors R S2 R S1 R S3 R S4 Typical Application ircuit A3988DS, Rev. 1

Selection Guide Part Number Package Packing A3988SEV-T 36 pin QFN with exposed thermal pad 61 pieces per tube A3988SEVTR-T 36 pin QFN with exposed thermal pad 15 pieces per reel A3988SJPTR-T 48 pin LQFP with exposed thermal pad 15 pieces per reel Absolute Maximum Ratings SPEIFIATIONS haracteristic Symbol Notes Rating Units Load Supply Voltage V BB -.5 to 36 V Pulsed t w < 1 µs 38 V Logic Supply Voltage V DD.4 to 7 V Output urrent I OUT May be limited by duty cycle, ambient temperature, and heat sinking. Under any set of conditions, do not exceed the specified current rating or a Junction Temperature of 15. 1.2 A Pulsed t w < 1 µs 2.8 A Logic Input Voltage Range V IN.3 to 7 V SENSEx Pin Voltage V SENSEx.5 V Pulsed t w < 1 µs 2.5 V VREFx Pin Voltage V REFx 2.5 V Operating Temperature Range T A Range S 2 to 85 º Junction Temperature T J (max) 15 º Storage Temperature Range T stg 4 to 125 º Thermal haracteristics (may require derating at maximum conditions) haracteristic Symbol Test onditions Min. Units Package Thermal Resistance R θja EV package, 4 layer PB based on JEDE standard 27 º/W JP package, 4 layer PB based on JEDE standard 23 º/W 55 5 Power Dissipation versus Ambient Temperature Power Dissipation, PD (mw) 45 4 35 3 25 2 15 1 5 EV Package 4-layer PB (R θja = 27 º/W) JP Package 4-layer PB (R θja = 23 º/W) 25 5 75 1 125 15 175 Temperature ( ) 2

+ - + - A3988.1 µf.1 µf 1 µf.22 µf VP VDD DMOS FULL-BRIDGE 1 V P OS HARGE PUMP OUT1A PHASE1 OUT1B I1 I11 ontrol Logic Bridges 1 and 2 SENSE1 GATE DRIVE DMOS FULL-BRIDGE 2 Sense1 3 + - PWM Latch BLANKING OUT2A VREF2 Sense2 PWM Latch BLANKING OUT2B V P Sense2 SENSE2 VBB2 DMOS FULL-BRIDGE 3 OUT3A OUT3B + - PWM Latch BLANKING PWM Latch BLANKING GATE DRIVE Sense3 DMOS FULL-BRIDGE 4 Sense4 SENSE3 VBB2 OUT4A OUT4B SENSE4 P1 P2 VBB1 VBB1 PHASE2 I2 I12 VBB1 VREF1 3 PHASE3 I3 I13 ontrol Logic Bridges 3 and 4 PHASE4 I4 I14 VREF3 VREF4 Sense3 3 3 Sense4 Functional Block Diagram 3

Pin-out Diagrams and Terminal List Table 36 35 34 33 32 31 3 29 28 27 26 25 OUT3A SENSE3 OUT3B VBB2 OUT4B SENSE4 OUT4A I13 37 24 I14 I13 OUT3A SENSE3 OUT3B VBB2 OUT4B SENSE4 OUT4A I14 I12 38 I11 39 23 22 PHASE1 27 26 25 24 23 22 21 2 19 4 21 PHASE2 I12 28 I11 29 3 VP 31 P1 32 P2 33 I1 34 I2 35 I3 36 I4 1 OUT1A 2 SENSE1 3 PAD OUT1B VBB1 OUT2B 4 5 6 SENSE2 7 OUT2A 8 PHASE4 9 18 17 16 15 14 13 12 11 1 PHASE1 PHASE2 VREF4 VREF3 VREF2 VREF1 VDD PHASE3 Packages are not to scale 41 VP 42 P1 43 P2 44 I1 45 I2 46 I3 47 I4 48 PAD 1 2 3 4 5 6 7 8 9 1 11 12 OUT1A SENSE1 OUT1B VBB1 OUT2B SENSE2 OUT2A 2 19 18 17 16 15 14 13 VREF4 VREF3 VREF2 VREF1 VDD PHASE3 PHASE4 Package EV, 36-Pin QFN Pin-out Package JP, 48-Pin LQFP Pin-out Terminal List Table EV Number JP Pin Name Pin Description 2 3 OUT1A DMOS Full-Bridge 1 Output A 3 4 SENSE1 Sense Resistor Terminal for Bridge 1 4 5 OUT1B DMOS Full-Bridge 1 Output B 5 6 VBB1 1 Load Supply Voltage 6 8 OUT2B DMOS Full-Bridge 2 Output B 7 9 SENSE2 Sense Resistor Terminal for Bridge 2 8 1 OUT2A DMOS Full-Bridge 2 Output A 9 13 PHASE4 ontrol Input 1 14 PHASE3 ontrol Input 11 15 VDD Logic Supply Voltage 12 16 VREF1 Analog Input 13 17 VREF2 Analog Input 14 18 VREF3 Analog Input 15 19 VREF4 Analog Input 16 2 Ground 17 21 PHASE2 ontrol Input 18 22 PHASE1 ontrol Input 19 24 I14 ontrol Input 2 27 OUT4A DMOS Full-Bridge 4 Output A 21 28 SENSE4 Sense Resistor Terminal for Bridge 4 22 29 OUT4B DMOS Full-Bridge 4 Output B 23 31 VBB2 1 Load Supply Voltage 24 32 OUT3B DMOS Full-Bridge 3 Output B 25 33 SENSE3 Sense Resistor Terminal for Bridge 3 26 34 OUT3A DMOS Full-Bridge 3 Output A 27 37 I13 ontrol Input 28 38 I12 ontrol Input 29 39 I11 ontrol Input 3 4 Ground 31 42 VP Reservoir apacitor Terminal 32 43 P1 harge Pump apacitor Terminal 33 44 P2 harge Pump apacitor Terminal 34 45 I1 ontrol Input 35 46 I2 ontrol Input 36 47 I3 ontrol Input 1 48 I4 ontrol Input 1, 2, 7, 11, 12, 23, 25, 26, 3, 35, No onnect 36, 41 Exposed pad for enhanced thermal PAD performance. Should be soldered to the PB. 1 VBB1 and VBB2 need to be connected together close to the A3988 4

ELETRIAL HARATERISTIS 1 : valid at T A = 25, V BB = 36 V, unless otherwise noted haracteristics Symbol Test onditions Min. Typ. 2 Max. Units Load Supply Voltage Range V BB Operating 8. 36 V Logic Supply Voltage Range V DD Operating 3. 5.5 V VDD Supply urrent I DD 7 1 ma Output On Resistance R DS(on) Source driver, I OUT = 1.2 A, T J = 25 7 8 mω Sink driver, I OUT = 1.2 A, T J = 25 7 8 mω V f, Outputs I OUT = 1.2 A 1.3 V Output Leakage I DSS Outputs, V OUT = to V BB 2 2 µa VBB Supply urrent I BB I OUT = ma, outputs on, PWM = 5 khz, D = 5% ontrol Logic Logic Input Voltage 8 ma V IN(1).7 V DD V V IN().3 V DD V Logic Input urrent I IN V IN = to 5 V 2 <1. 2 µa Input Hysteresis V hys 15 3 5 mv Propagation Delay Times t pd PWM change to source on 35 55 1 ns PWM change to source off 35 3 ns PWM change to sink on 35 55 1 ns PWM change to sink off 35 25 ns rossover Delay t OD 3 425 1 ns Blank Time t BLANK.7 1 1.3 µs VREFx Pin Input Voltage Range V REFx Operating. 1.5 V VREFx Pin Reference Input urrent I REF V REF = 1.5 ±1 μa urrent Trip-Level Error 3 V ERR V REF = 1.5, phase current = 67% 5 5 % V REF = 1.5, phase current = 1% 5 5 % Protection ircuits V REF = 1.5, phase current = 33% 15 15 % VBB UVLO Threshold V UV(VBB) V BB rising 7.3 7.6 7.9 V VBB Hysteresis V UV(VBB)hys 4 5 6 mv VDD UVLO Threshold V UV(VDD) V DD rising 2.65 2.8 2.95 V VDD Hysteresis V UV(VDD)hys 75 15 125 mv Thermal Shutdown Temperature T JTSD 155 165 175 Thermal Shutdown Hysteresis T JTSDhys 15 1For input and output current specifications, negative current is defined as coming out of (sourcing) the specified device pin. 2 Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions. Performance may vary for individual units, within the specified maximum and minimum limits. 3 V ERR = [(V REF /3) V SENSE ] / (V REF /3). 5

FUTIONAL DESRIPTION Device Operation The A3988 is designed to operate two stepper motors, four D motors, or one stepper and two D motors. The currents in each of the output full-bridges, all N-channel DMOS, are regulated with fixed off-time pulse width modulated (PWM) control circuitry. Each full-bridge peak current is set by the value of an external current sense resistor, R Sx, and a reference voltage, V REFx. If the logic inputs are pulled up to V DD, it is good practice to use a high value pull-up resistor in order to limit current to the logic inputs, should an overvoltage event occur. Logic inputs include: PHASEx, Ix, and I1x. Internal PWM urrent ontrol Each full-bridge is controlled by a fixed off-time PWM current control circuit that limits the load current to a desired value, I TRIP. Initially, a diagonal pair of source and sink DMOS outputs are enabled and current flows through the motor winding and R Sx. When the voltage across the current sense resistor equals the voltage on the VREFx pin, the current sense comparator resets the PWM latch, which turns off the source driver. The maximum value of current limiting is set by the selection of R S and the voltage at the VREF input with a transconductance function approximated by: I TripMax = V REF / (3 R S ) Each current step is a percentage of the maximum current, I TripMax. The actual current at each step I Trip is approximated by: I Trip = (% I TripMax / 1) I TripMax where % I TripMax is given in the Step Sequencing table. Note: It is critical to ensure that the maximum rating of ±5 mv on each SENSEx pin is not exceeded. Fixed Off-Time The internal PWM current control circuitry uses a one shot circuit to control the time the drivers remain off. The one shot off-time, t off, is internally set to 3 µs. Blanking This function blanks the output of the current sense comparator when the outputs are switched by the internal current control circuitry. The comparator output is blanked to prevent false detections of overcurrent conditions, due to reverse recovery currents of the clamp diodes, or to switching transients related to the capacitance of the load. The stepper blank time, t BLANK, is approximately 1 μs. ontrol Logic ommunication is implemented via the industry standard I1, I, and PHASE interface. This communication logic allows for full, half, and quarter step modes. Each bridge also has an independent V REF input so higher resolution step modes can be programmed by dynamically changing the voltage on the VREFx pins. harge Pump (P1 and P2) The charge pump is used to generate a gate supply greater than the V BB in order to drive the source-side DMOS gates. A.1 μf ceramic capacitor should be connected between P1 and P2 for pumping purposes. A.1 μf ceramic capacitor is required between VP and VBBx to act as a reservoir to operate the highside DMOS devices. Shutdown In the event of a fault (excessive junction temperature, or low voltage on VP), the outputs of the device are disabled until the fault condition is removed. At power-up, the undervoltage lockout (UVLO) circuit disables the drivers. 6

Synchronous Rectification When a PWM-off cycle is triggered by an internal fixed off-time cycle, load current will recirculate. The A3988 synchronous rectification feature will turn on the appropriate MOSFETs during the current decay, and effectively short out the body diodes with the low R DS(on) driver. This significantly lowers power dissipation. When a zero current level is detected, synchronous rectification is turned off to prevent reversal of the load current. Mixed Decay Operation The bridges operate in mixed decay mode. Referring to Figure 1, as the trip point is reached, the device goes into fast decay mode for 3.1% of the fixed off-time period. After this fast decay portion, t FD, the device switches to slow decay mode for the remainder of the off-time. During transitions from fast decay to slow decay, the drivers are forced off for approximately 6 ns. This feature is added to prevent shoot-through in the bridge. As shown in Figure 1, during this dead time portion, synchronous rectification is not active, and the device operates in fast decay and slow decay only. V PHASE + I OUT See Enlargement A Enlargement A Fixed Off-Time 3 µs 9 µs 21 µs I Trip I OUT FD SR SD SR FD DT SD DT SD DT Figure 1: Mixed Decay Mode Operation 7

STEP SEQUEING DIAGRAMS 1. 1. 66.7 66.7 Phase 1 (%) Phase 1 (%) 66.7 66.7 1. 1. 1. 1. 66.7 66.7 Phase 2 (%) Phase 2 (%) 66.7 66.7 1. Full step 2 phase Modified full step 2 phase 1. Half step 2 phase Modified half step 2 phase Figure 2: Step Sequencing for Full-Step Increments. Figure 3: Step Sequencing for Half-Step Increments. 8

1. 66.7 33.3 Phase 1 (%) 33.3 66.7 1. 1. 66.7 33.3 Phase 2 (%) 33.3 66.7 1. Figure 4: Step Sequence for Quarter-Step Increments Table 1: Step Sequencing Settings Full 1/2 1/4 Phase 1 (%I TripMax ) Ix I1x PHASE Phase 2 (%I TripMax ) Ix I1x PHASE 1 1 H H X 1 L L 2 33 L H 1 1 L L 1 2 3 1/66 * L/H * L 1 1/66 * L/H * L 4 1 L L 1 33 L H 3 5 1 L L 1 H H X 6 1 L L 1 33 L H 1 2 4 7 1/66 * L/H * L 1 1/66 * L/H * L 1 8 33 L H 1 1 L L 1 5 9 H H X 1 L L 1 1 33 L H 1 L L 1 3 6 11 1/66 * L/H * L 1/66 * L/H * L 1 12 1 L L 33 L H 1 7 13 1 L L H H X 14 1 L L 33 L H 4 8 15 1/66 * L/H * L 1/66 * L/H * L 16 33 L H 1 L L * Denotes modified step mode 9

APPLIATIONS INFORMATION Motor onfigurations For applications that require either a stepper/d motor driver or dual D motor driver, Allegro offers the A3989 and A3995. These devices are offered in the same 36 pin QFN package as the A3988. The D motor drivers are capable of supplying 2.4 A at 36 V. ommutation is done with a standard phase/enable logic interface. Please refer to the Allegro website for further information and datasheets about those devices. D Motor ontrol Each of the 4 full bridges has independent PWM current control circuitry that makes the A3988 capable of driving up to four D motors at currents up to 1.2 A. ontrol of the D motors is accomplished by tying the I, I1 pins together creating an equivalent ENABLE function with maximum current defined by the voltage on the corresponding VREF pin. The D motors can be driven via a PWM signal on this enable signal, or on the corresponding PHASE pin. Motor control includes forward, reverse, and coast. Layout The printed circuit board should use a heavy groundplane. For optimum electrical and thermal performance, the A3988 must be soldered directly onto the board. On the underside of the A3988 VBB package is an exposed pad, which provides a path for enhanced thermal dissipation. The thermal pad should be soldered directly to an exposed surface on the PB. Thermal vias are used to transfer heat to other layers of the PB. Grounding In order to minimize the effects of ground bounce and offset issues, it is important to have a low impedance single-point ground, known as a star ground, located very close to the device. By making the connection between the exposed thermal pad and the groundplane directly under the A3988, that area becomes an ideal location for a star ground point. A low impedance ground will prevent ground bounce during high current operation and ensure that the supply voltage remains stable at the input terminal. The recommended PB layout shown in the diagram below, illustrates how to create a star ground under the device, to serve both as low impedance ground point and thermal path. PB Thermal Vias A3988 V BB Solder Trace (2 oz.) Signal (1 oz.) Ground (1 oz.) Thermal (2 oz.) P VP IN3 P VP IN3 OUT1A OUT1B RS1 U1 RS3 OUT3A OUT3B RS1 IN1 1 I3 I2 I1 P2 P1 VP I11 I12 I4 OUT1A SENSE1 A3988 OUT1B PAD VBB1 OUT2B I13 OUT3A SENSE3 OUT3B VBB2 OUT4B RS3 IN2 IN1 IN2 RS2 SENSE2 OUT2A SENSE4 OUT4A RS4 OUT2B OUT2A RS2 RS4 OUT4B OUT4A PHASE4 PHASE3 VDD VREF1 VREF2 VREF3 VREF4 PHASE2 PHASE1 I14 VDD1 VDD VDD2 EV package layout shown VDD1 VDD2 Figure 5: Printed circuit board layout with typical application circuit, shown at right. The copper area directly under the A3988 (U1) is soldered to the exposed thermal pad on the underside of the device. The thermal vias serve also as electrical vias, connecting it to the ground plane on the other side of the PB, so the two copper areas together form the star ground. 1

The two input capacitors should be placed in parallel, and as close to the device supply pins as possible. The ceramic capacitor should be closer to the pins than the bulk capacitor. This is necessary because the ceramic capacitor will be responsible for delivering the high frequency current components. Sense Pins The sense resistors, RSx, should have a very low impedance path to ground, because they must carry a large current while supporting very accurate voltage measurements by the current sense comparators. Long ground traces will cause additional voltage drops, adversely affecting the ability of the comparators to accurately measure the current in the windings. As shown in the layout below, the SENSEx pins have very short traces to the RSx resistors and very thick, low impedance traces directly to the star ground underneath the device. If possible, there should be no other components on the sense circuits. Note: When selecting a value for the sense resistors, be sure not to exceed the maximum voltage on the SENSEx pins of ±5 mv. 11

Package Outline Diagrams For Reference Only Not for Tooling Use (Reference JEDE MO-22VJJD-3, except pin count) Dimensions in millimeters NOT TO SALE Exact case and lead configuration at supplier discretion within limits shown 6. ±.15.3.5 1 36 1.15 36 2 A 1 2 6. ±.15 4.15 5.8 D 37X.8.9 ±.1 SEATING PLANE 4.15 5.8.25 +.5.7.5 PB Layout Reference View.55 ±.2 B 4.15 A Terminal #1 mark area B Exposed thermal pad (reference only, terminal #1 identifier appearance at supplier discretion) 2 1 36 Reference land pattern layout (reference IP7351 QFN5P6X6X1-37V1M);All pads a minimum of.2 mm from all adjacent pads; adjust as necessary to meet application process requirements and PB layout tolerances; when mounting on a multilayer PB, thermal vias at the exposed thermal pad land can improve thermal dissipation (reference EIA/JEDE Standard JESD51-5) 4.15 D oplanarity includes exposed thermal pad and terminals Figure 6: EV Package, 36 Pin QFN with Exposed Thermal Pad 12

For Reference Only Not for Tooling Use (Reference JEDE MS-26 BBHD) Dimensions in millimeters NOT TO SALE Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown 9. ±.2 7. ±.2 4 ±4 7º º.3.5.15 +.5.6 1.7 B 9. ±.2 7. ±.2 5. ±.4 5. 8.6 48 A 48.6 ±.15 (1.) 1 2 5. ±.4.25 SEATING PLANE GAGE PLANE 1 2 5. 8.6 PB Layout Reference View 48X.8.22 ±.5.5 1.4 ±.5.1 ±.5 1.6 MAX SEATING PLANE A B Terminal #1 mark area Exposed thermal pad (bottom surface) Reference land pattern layout (reference IP7351 QFP5P9X9X16-48M); adjust as necessary to meet application process requirements and PB layout tolerances; when mounting on a multilayer PB, thermal vias at the exposed thermal pad land can improve thermal dissipation (reference EIA/JEDE Standard JESD51-5) Figure 7: JP Package, 48 Pin LQFP with Exposed Thermal Pad 13

Revision History Revision Revision Date Description of Revision 9 June 14, 211 hange in packing options 1 July 9, 214 Revised Step Sequence Settings table and Functional Block Diagram opyright 26-214, reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of Allegro s product can reasonably be expected to cause bodily harm. The information included herein is believed to be accurate and reliable. However, assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. For the latest version of this document, visit our website: www.allegromicro.com 14