OSG65R900xTF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching PWM Server power supply Charger
General Description OSG65R900xTF use advanced GreenMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications., min@tjmax, pulse R DS(ON), max @ VGS= V Q g 700 V 3.5 A 900 mω 7. nc Schematic and Package Information Schematic Diagram Pin Assignment Top View TO220F OSG65R900FTF TO252 OSG65R900DTF Absolute Maximum Ratings at =25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage 650 V Gate source voltage ±30 V Continuous drain current ), T C=25 Continuous drain current ), T C=0 2.8 4.5 A Pulsed drain current 2), T C=25, pulse 3.5 A Power dissipation 3) for TO252, T C=25 Power dissipation 3) for TO220F, T C=25 25 P D 32 W Single pulsed avalanche energy 5) E AS 50 mj MOSFET dv/dt ruggedness, =0 480 V dv/dt 50 V/ns Reverse diode dv/dt, =0 480 V, I SD dv/dt 5 V/ns Operation and storage temperature T stg, -55 to 50 Oriental Semiconductor Copyright reserved 207 2 /
Thermal Characteristics Parameter Symbol TO252 Value TO220F Unit Thermal resistance, junction-case R θjc 3.9 5.0 C/W Thermal resistance, junction-ambient 4) R θja 62 62.5 C/W Electrical Characteristics at =25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition 650 =0 V, =250 μa Drain-source breakdown voltage BS 700 V =0 V, =250 μa =50 Gate threshold voltage (th) 2.9 3.9 V =, =250 μa 0.75 0.9 = V, =2 A Drain-source on-state resistance R DS(ON).75 Ω = V, =2 A, =50 Gate-source leakage current I GSS 0 =30 V na -0 =-30 V Drain-source leakage current SS μa =650 V, =0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss 324. pf Output capacitance C oss 30. pf Reverse transfer capacitance C rss.6 pf Turn-on delay time t d(on) 22.8 ns Rise time t r.5 ns Turn-off delay time t d(off) 48.7 ns Fall time t f 4.9 ns =0 V, =50 V, ƒ=0 khz = V, =400 V, R G=2 Ω, =2 A Oriental Semiconductor Copyright reserved 207 3 /
Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g 7. nc Gate-source charge Q gs.5 nc Gate-drain charge Q gd 3.5 nc Gate plateau voltage V plateau 5.8 V =2 A, =400 V, = V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 4.5 Pulsed source current I SP 3.5 A <V th Diode forward voltage V SD.3 V I S=4.5 A, =0 V Reverse recovery time t rr 47.0 ns Reverse recovery charge Q rr 0.92 μc Peak reverse recovery current I rrm 2.4 A V R=400 V, I S=2 A, di/dt=0 A/μs Note ) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T a=25 C. 5) V DD=0 V, R G=50 Ω, L=60 mh, starting =25 C. Oriental Semiconductor Copyright reserved 207 4 /
Electrical Characteristics Diagrams, Drain current (A) 2 8 6 4 V = 25 7 V 6.5 V 6 V 5.5 V 2 5 V = 4.5 V 0 0 2 3 4 5 6 7 8 9 2 3 4 5, Drain-source voltage (V), Drain current(a) = V = 25 0. 0 2 3 4 5 6 7 8 9, Gate-source voltage(v) Figure, Typ. output characteristics Figure 2, Typ. transfer characteristics C, Capacitance (pf) 000 00 0 f = 0 khz = 0 V C iss C oss C rss, Gate-source voltage(v).0 7.5 5.0 2.5 = 2 A = 400 V 0. 0 20 40 60 80 0, Drain-source voltage (V) 0.0 0 2 3 4 5 6 7 8 Q g, Gate charge(nc) Figure 3, Typ. capacitances Figure 4, Typ. gate charge BS, Drain-source breakdown voltage (V) 800 760 720 680 640 600 = 250 μa = 0 V -50 0 50 0 50, Junction Temperature ( ) R DS(ON), On-resistance(Ω) 2.0.8.6.4.2.0 0.8 0.6 0.4 0.2 = 2 A = V -50 0 50 0 50, Junction Temperature ( ) Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance Oriental Semiconductor Copyright reserved 207 5 /
V th, Threshold voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0 = 250 μa I S, Source current (A) 0 0. = 25.5-50 0 50 0 50, Junction Temperature ( ) 0.4 0.6 0.8.0.2.4.6 V SD, Source-Drain voltage (V) Figure 7, Threshold voltage Figure 8, Forward characteristic of body diode 5 8 4 R DS(ON), On-resistance(Ω) 6 4 2 =5.5 V 6 V 6.5 V 7 V V, Drain current (A) 3 2 0 2 4 6 8 2, Drain current(a) 0 0 20 40 60 80 0 20 40 T C, Case Temperature ( ) Figure 9, Drain-source on-state resistance Figure, Drain current, Drain current(a) 0. R DS(ON) Limited μs 0 μs ms ms DC, Drain current(a) 0. R DS(ON) Limited μs 0 μs ms ms DC 0.0 0. 0 00, Drain-source voltage(v) 0.0 0. 0 00, Drain-source voltage(v) Figure, Safe operation area for TO252 T C=25 Figure 2, Safe operation area for TO220F T C=25 Oriental Semiconductor Copyright reserved 207 6 /
Test circuits and waveforms Figure, Gate charge test circuit & waveform Figure 2, Switching time test circuit & waveforms Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms Figure 4, Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright reserved 207 7 /
Package Information Figure, TO220F package outline dimension SYMBOL mm MIN NOM MAX E 9.96.6.36 A 4.50 4.70 4.90 A 2.34 2.54 2.74 A4 2.56 2.76 2.96 c 0.40 0.50 0.65 D 5.57 5.87 6.7 H e L 2.68 6.70REF 2.54BSC 2.98 3.28 L 2.88 3.03 3.8 ФP 3.03 3.8 3.38 ФP3 3.5 3.45 3.65 F3 3.5 3.30 3.45 G3.25.35.55 b.8.28.43 b2 0.70 0.80 0.95 Oriental Semiconductor Copyright reserved 207 8 /
Package Information Figure2, TO252 package outline dimension SYMBOL mm MIN NOM MAX A 2.20 2.30 2.38 A 0.00-0.20 A2 0.97.07.7 b 0.68 0.78 0.90 b3 5.20 5.33 5.46 c 0.43 0.53 0.6 D 5.98 6. 6.22 D E 6.40 5.30REF 6.60 6.73 E 4.63 - - e H 9.40 2.286BSC..50 L2 L3 0.88 0.5BSC -.28 L4 0.50 -.00 θ 0-8 Oriental Semiconductor Copyright reserved 207 9 /
Ordering Information Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO220F 50 20 00 6 6000 Package Units/Reel Reels/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO252 2500 2 5000 5 25000 Product Information Product Package Pb Free RoHS Halogen Free OSG65R900FTF TO220F yes yes yes OSG65R900DTF TO252 yes yes yes Oriental Semiconductor Copyright reserved 207 /