General Description The MDP/F13N5B uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F13N5B is suitable device for SMPS, HID and general purpose applications. MDP13N5B / MDF13N5B N-Channel MOSFET 5V, 13. A,.5Ω Features V DS = 5V = 13.A R DS(ON).5Ω Applications Power Supply PFC Ballast @V GS = 1V @V GS = 1V Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol MDP13N5B MDF13N5B Unit Drain-Source Voltage V DSS 5 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C =25 o C 13 13* A T C =1 o C 8.2 8.2* A Pulsed Drain Current (1) M 52 52* A Power Dissipation T C =25 o C P D 187 41 W Derate above 25 o C 1.49.33 W/ o C Repetitive Avalanche Energy (1) E AR 18.7 mj Peak Diode Recovery dv/dt (3) dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) E AS 58 mj Junction and Storage Temperature Range T J, T stg -55~15 Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol MDP13N5B MDF13N5B Unit Thermal Resistance, Junction-to-Ambient (1) R θja 62.5 62.5 Thermal Resistance, Junction-to-Case (1) R θjc.67 3.5 o C/W 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDP13N5BTH -55~15 o C TO-22 Tube Halogen Free MDF13N5BTH -55~15 o C TO-22F Tube Halogen Free Electrical Characteristics (Ta = 25 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 25µA, V GS = V 5 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 25µA 2. - 4. Drain Cut-Off Current SS V DS = 5V, V GS = V - - 1 µa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - 1 na Drain-Source ON Resistance R DS(ON) V GS = 1V, = 6.5A -.39.5 Ω Forward Transconductance g fs V DS = 4V, = 6.5A - 13 - S Dynamic Characteristics Total Gate Charge Q g - 27 - Gate-Source Charge Q gs V DS = 4V, = 13.A,V GS = 1V (3) - 6.3 - Gate-Drain Charge Q gd - 8.6 - Input Capacitance C iss - 1459 - Reverse Transfer Capacitance C rss V DS = 25V, V GS = V, f = 1.MHz - 7.4 - Output Capacitance C oss - 174 - Turn-On Delay Time t d(on) - 21 - Rise Time t r V GS = 1V, V DS = 25V, = 13.A, - 47 - Turn-Off Delay Time t d(off) R G = 25Ω (3) - 131 - Fall Time t f - 54 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - 13 - A Source-Drain Diode Forward Voltage V SD I S = 13.A, V GS = V - - 1.4 V Body Diode Reverse Recovery Time t rr - 325 - ns I F = 13.A, dl/dt = 1A/µs (3) Body Diode Reverse Recovery Charge Q rr - 2.9 - µc V nc pf ns Note : 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX) =15 C. 3. I SD 13.A, di/dt 2A/us, V DD BV DSS, R g =25Ω, Starting T J =25 C 4. L=6.2mH, I AS =13.A, V DD =5V,, R g =25Ω, Starting T J =25 C 2
,D ra in C u rre n t [A ] R DS(ON), (Normalized) Drain-Source On-Resistance 35 3 25 2 15 1 5 3. 2.5 2. 1.5 1..5 V gs =5.V =5.5V =6.V =7.V =8.V =1.V =15.V Fig.1 On-Region Characteristics 1. V GS = 1 V 2. = 5.A Notes 1. 25µs Pulse Test 2. T C =25 5 1 15 2 25 V DS,Drain-Source Voltage [V] R D S (O N ) [Ω ] BV DSS, (Normalized) Drain-Source Breakdown Voltage 1..75.5.25 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 1.2 1.1 1..9 1. V GS = V 2. = 25 μa V GS =1V V GS =2V 5 1 15 2 25 3,Drain Current [A]. -5 5 1 15 2 T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature.8-5 5 1 15 2 T J, Junction Temperature [ o C] Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. Vds=3V 1. V GS = V 2.25µs Pulse test (A) 1 1 15 25-55 R Reverse Drain Current [A] 1 1 15 25.1 3 4 5 6 7 V GS [V].1.2.4.6.8 1. 1.2 V SD, Source-Drain Voltage [V] Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3
V GS, Gate-Source Voltage [V], Drain Current [A] 1 8 6 4 2 Note : = 13.A 2 4 6 8 1 12 14 16 18 2 22 24 26 28 3 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 1 2 1 µs 1 1 1 1-1 Operation in This Area is Limited by R DS(on) DC 1V 25V 4V 1 µs 1 ms 1 ms 1 ms Capacitance [pf] 14 12 1 8 6 4 2 14 12, Drain Current [A] 1 8 6 4 C iss C oss C rss 1 1 V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ; 1. V GS = V 2. f = 1 MHz Fig.8 Capacitance Characteristics Single Pulse T J =Max rated T C =25 2 1-2 1-1 1 1 1 1 2 V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area MDP13N5B (TO-22) 25 5 75 1 125 15 T C, Case Temperature [ ] Fig.1 Maximum Drain Current vs. Case Temperature Z θ JC (t), Normalized Thermal Response 1 1-1 1-2 D=.5.2.1.5.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =.67 /W 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, Rectangular Pulse Duration [sec] Power (W) 24 22 2 18 16 14 12 1 8 6 4 2 1E-5 1E-4 1E-3.1.1 1 1 Pulse Width (s) single Pulse R thjc =.67 /W T C = 25 Fig.11 Transient Thermal Response Curve MDP13N5B (TO-22) Fig.12 Single Pulse Maximum Power Dissipation MDP13N5B (TO-22) 4
, Drain Current [A] Z θ JC (t), Normalized Thermal Response 1 2 1 µs 1 1 1 1-1 1-2 1 1-1 Operation in This Area is Limited by R DS(on) Single Pulse T J =Max rated T C =25 1-1 1 1 1 1 2 1 µs 1 ms 1 ms Fig.13 Maximum Safe Operating Area MDF13N5B (TO-22F) D=.5.2.1.5.2.1 DC V DS, Drain-Source Voltage [V] single pulse 1 ms Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3. /W Power (W) 14 12 1 8 6 4 2 single Pulse R thjc = 3. /W T C = 25 1E-5 1E-4 1E-3.1.1 1 1 Pulse Width (s) Fig.14 Single Pulse Maximum Power Dissipation MDF13N5B (TO-22F) 1-2 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, Rectangular Pulse Duration [sec] Fig.15 Transient Thermal Response Curve MDF13N5B (TO-22F) 5
Physical Dimensions 3 Leads, TO-22 Dimensions are in millimeters unless otherwise specified 6
Physical Dimension 3 Leads, TO-22F Dimensions are in millimeters unless otherwise specified Symbol Min Nom Max A 4.5 4.93 b.63.91 b1 1.15 1.47 C.33.63 D 15.47 16.13 E 9.6 1.71 e 2.54 F 2.34 2.84 G 6.48 6.9 L 12.24 13.72 L1 2.79 3.67 Q 2.52 2.96 Q1 3.1 3.5 R 3. 3.55 7
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