Optocoupler, Phototransistor Output, High Temperature 1791823 DESCRIPTION The consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4 pin plastic dual inline package. AGENCY APPROVALS The safety application model number covering all products in this datasheet is. This model number should be used when consulting safety agency documents. BSI DIN EN 674755 (VDE 8845), available with option 1 FIMKO UL 1577 cul 1577 CQC C 1 A E C FEATURES Temperature range 55 C to +11 C Rated impulse voltage (transient overvoltage), V IOTM = 6 kv peak Isolation test voltage (partial discharge test voltage), V pd = 1.6 kv Rated isolation voltage (RMS includes DC), V IOWM = 6 V RMS Rated recurring peak voltage (repetitive) V IORM = 85 V peak Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): Application class I to IV at mains voltage 3 V Application class I to IV at mains voltage 6 V according to table 1 of IEC 66641, suitable for: Switchmode power supplies Line receiver Computer peripheral interface Microprocessor system interface ORDERING INFORMATION V O 6 1 5 A # X # # T DIP# Option 6 Option 7 AGENCY CERTIFIED/ PACKAGE UL, cul, BSI, FIMKO, CQC PART NUMBER CTR BIN Note Additional options may be possible, please contact sales office PACKAGE OPTION Rev. 2.3, 8Feb17 1 Document Number: 81753 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91 TAPE AND REEL CTR (%) 5 ma 1 ma 5 ma 5 to 6 4 to 8 63 to 125 1 to 2 16 to 32 5 to 15 1 to 3 8 to 16 13 to 26 2 to 4 DIP4 1 2 3 4 5 6 7 8 9 DIP4, 4 mil, option 6 X6 1X6 2X6 3X6 4X6 5X6 6X6 7X6 8X6 9X6 SMD4, option 7 X7T 1X7T 2X7T 3X7T 4X7T 5X7T 6X7T 7X7T 8X7T 9X7T SMD4, option 8 3X8T SMD4, option 9 X9T 1X9T 2X9T 3X9T 4X9T 5X9T 6X9T 7X9T 9X9T UL, cul, BSI, FIMKO, CQC, VDE (option 1) DIP4 DIP4, 4 mil, option 6 SMD4, option 7 5 to 6 4 to 8 63 to 125 1 to 2 16 to 32 5 to 15 1 to 3 8 to 16 13 to 26 2 to 4 X1 1X1 9X16 9X17T X17T 1X17T SMD4, option 8 SMD4, option 9 1X19T 2X19T 5X16 2X1 2X16 3X1 3X16 3X17T 3X18T 3X19T 4X1 4X16 4X17T 4X18T 4X19T 6X1 7X1 6X17T 7X17T 7.62 mm 1.16 mm >.6 mm Option 8 9.27 mm 8X1 8X16 8X17T 8X18T Option 9 > 8 mm
ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current 6 ma Forward surge current t p 1 μs SM 1.5 A LED power dissipation at 25 C P diss 1 mw OUTPUT Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM 1 ma Output power dissipation at 25 C P diss 15 mw COUPLER Operating ambient temperature range T amb 55 to +11 C Storage temperature range T stg 55 to +125 C Soldering temperature (1) 2 mm from case, 1 s T sld 26 C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD), and wave profile for soldering conditions for through hole devices (DIP), please go to Assembly Instructions (www.vishay.com/doc?854) 2 P tot Power Dissipation (mw) 15 1 5 Diode Phototransistor 25 5 75 1 125 15 T amb Ambient Temperature ( C) Fig. 1 Permissible Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = 5 ma V F 1.43 1.6 V Reverse current V R = 6 V I R 1 μa Junction capacitance V R =, f = 1 MHz C j 5 pf OUTPUT Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = 1 μa V ECO 7 V Collector emitter leakage current V CE = 2 V, = I CEO 1 1 na COUPLER Collector emitter saturation voltage = 1 ma, I C = 1 ma V CEsat.3 V Cutoff frequency V CE = 5 V, = 1 ma, R L = 1 Ω f c 11 khz Coupling capacitance f = 1 MHz C k.6 pf Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements Rev. 2.3, 8Feb17 2 Document Number: 81753 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
CURRENT TRANSFER RATIO (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1 CTR 13 3 % V CE = 5 V, = 1 ma 2 CTR 22 45 % 3 CTR 34 7 % 4 CTR 56 9 % CTR 5 6 % 5 CTR 5 15 % I C / V CE = 5 V, = 5 ma 6 CTR 1 3 % 7 CTR 8 16 % 8 CTR 13 26 % 9 CTR 2 4 % 1 CTR 4 8 % V CE = 5 V, = 1 ma 2 CTR 63 125 % 3 CTR 1 2 % 4 CTR 16 32 % SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Climatic classification According to IEC 68 part 1 55 / 11 / 21 Pollution degree According to DIN VDE 19 2 Comparative tracking index Insulation group IIIa CTI 25 Maximum rated withstanding isolation voltage According to UL1577, t = 1 min V ISO 5 V AC Maximum transient isolation voltage According to DIN EN 674755 V IOTM 6 V peak Maximum repetitive peak isolation voltage According to DIN EN 674755 V IORM 85 V peak T amb = 25 C, V IO = 5 V R IO 1 12 Ω Isolation resistance T amb = 1 C, V IO = 5 V R IO 1 11 Ω T amb = T S, V IO = 5 V R IO 1 9 Ω Output safety power P SO 265 mw Input safety current I SI 13 ma Input safety temperature T S 15 C Creepage distance DIP4; SMD4, option 7; 7.6 mm Clearance distance SMD4, option 9 7.6 mm Creepage distance DIP4, 4 mil, option 6; 8. mm Clearance distance SMD4, option 8 8. mm Insulation thickness DTI.4 mm Input to output test voltage, method B Input to output test voltage, method A V IORM x 1.875 = V PR, 1 % production test with t M = 1 s, partial discharge < 5 pc V IORM x 1.6 = V PR, 1 % sample test with t M = 1 s, partial discharge < 5 pc V PR 16 V peak V PR 136 V peak Note According to DIN EN 674755 (VDE 884), 7.4.3.8.2 (see Fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits Rev. 2.3, 8Feb17 3 Document Number: 81753 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
www.vishay.com 3 25 2 Phototransistor P SO (mw) V IOTM t 1, t 2 = 1 s to 1 s t 3, t 4 = 1 s t test = 1 s t stres = 12 s 15 1 V pd V IOWM V IORM 5 IRdiode I SI (ma) 25 5 75 1 125 T SI Safety Temperature ( C) 15 1393 t 1 t Tr = 6 s t 3 t test t 4 t 2 t stres t Fig. 2 Derating Diagram Fig. 3 Test Pulse Diagram for Sample Test According to DIN EN 674752 (VDE 884); IEC 674755 SWITCHING CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time V S = 5 V, I C = 2 ma, R L = 1 Ω t d 3 μs Rise time V S = 5 V, I C = 2 ma, R L = 1 Ω t r 3 μs Fall time V S = 5 V, I C = 2 ma, R L = 1 Ω t f 4.7 μs Storage time V S = 5 V, I C = 2 ma, R L = 1 Ω t s.3 μs Turnon time V S = 5 V, I C = 2 ma, R L = 1 Ω t on 6 μs Turnoff time V S = 5 V, I C = 2 ma, R L = 1 Ω t off 5 μs Turnon time V S = 5 V, = 1 ma, R L = 1 kω t on 3 μs Turnoff time V S = 5 V, = 1 ma, R L = 1 kω t off 1 μs V CC = 5 V Input pulse Input R L 1 % V OUT 9 % Output pulse t r t f t on t off Fig. 4 Test Circuit Fig. 5 Test Circuit and Waveforms Rev. 2.3, 8Feb17 4 Document Number: 81753 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) Forward Current (ma) 1 T amb = 5 C T amb = 75 C 1 T amb = 11 C T amb = 25 C 1 T amb = 55 C T amb = C.1.7.8.9 1. 1.1 1.2 1.3 1.4 1.5 1.6 V F Forward Voltage (V) I C Collector Current (ma) 3 25 = 25 ma 2 15 = 1 ma 1 = 5 ma 5 = 1 ma = 2 ma.1.2.3.4 22329 V CE Collector Emitter Voltage (sat) (V) Fig. 6 Forward Current vs. Forward Voltage Fig. 9 Collector Current vs. Collector Emitter Voltage (saturated) 25 1.2 I C Collector Current (ma) 2 = 3 ma 15 = 2 ma 1 = 15 ma I 5 F = 1 ma = 5 ma 2 4 6 8 1 22327 V CE Collector Emitter Voltage (NS) (V) N CTR Normalized CTR (sat) 1..8.6.4.2 = 5 ma = 1 ma V CE =.4 V Normalized to: = 1 ma, V CE = 5 V, T amb = 25 C 6 4 2 2 4 6 8 1 12 T amb Ambient Temperature ( C) Fig. 7 Collector Current vs. Collector Emitter Voltage (nonsaturated) Fig. 1 Normalized CTR (saturated) vs. Ambient Temperature = ma 1 V CE = 4 V 1 V CE = 12 V V CE = 24 V.1.1 6 4 2 2 4 6 8 1 12 22328 T amb Ambient Temperature ( C) I CE Leakage Current (na) N CTR Normalized CTR (NS) 1.2 1..8.6.4 = 1 ma = 5 ma.2 Normalized to: = 1 ma, V CE = 5 V, T amb = 25 C 6 4 2 2 4 6 8 1 12 T amb Ambient Temperature ( C) Fig. 8 Leakage Current vs. Ambient Temperature Fig. 11 Normalized CTR (nonsaturated) vs. Ambient Temperature Rev. 2.3, 8Feb17 5 Document Number: 81753 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
N CTR Normalized CTR (NS) 1.2 1..8.6.4.2 T amb = C T amb = 55 C T amb = 25 C T amb = 75 C T amb = 11 C Normalized to: = 1 ma, V CE = 5 V, T amb = 25 C.1 1 1 1 Forward Current (ma) Phase (deg) 2 V CE = 5 V 2 4 6 8 1 12 14 16 1 1 1 1 22335 f (khz) Fig. 12 Normalized CTR (nonsaturated) vs. Forward Current Fig. 15 Phase Angle vs. Frequency N CTR Normalized CTR (sat) 1.2 1..8.6.4.2 V CE =.4 V T amb = C T amb = 55 C T amb = 25 C T amb = 75 C T amb = 11 C Normalized to: = 1 ma, V CE = 5 V, T amb = 25 C.1 1 1 1 Forward Current (ma) t on, t off Switching Time (μs) 1 V CE = 5 V, = 1 ma 1 t off (μs) 1 t on (μs) 1.1 5 1 15 2 22336 R L Load Resistance (kω) Fig. 13 Normalized CTR (saturated) vs. Forward Current Fig. 16 Switching Time vs. Load Resistance 1 V CC = 5 V F CTR (khz) 1 1 1.1 1 1 1 22334 I C (ma) Fig. 14 F CTR vs. I C (saturated) (ma) Rev. 2.3, 8Feb17 6 Document Number: 81753 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
PACKAGE DIMENSIONS (in millimeters) 6.5 ±.3 Pin 1 identifier 4.58 ±.3 7.62 to 9.5.4 ±.1 7.62 typ. 3.5 ±.3 4.5 ±.3 1.3 ±.1 to 15 2.8 ±.5.5 ±.1.25 typ. i1782711 2.54 typ. Option 6 Option 7 Option 8 Option 9 7.62 typ. 7.62 typ. 7.62 typ. 1.3 max. 7.62 typ. 2.7 min. 3.5 ±.3.1 min..6 min. 8 min. 4.3 ±.3.6 min..25 ±.1 3.5 ±.3 9.27 min..1 ±.1 3.6 ±.3 1.3 max. 12.1 max..6 min. 8 min. 1.16 typ. 28236 2.54 1.52 8 min. 11.5 R.25 1.78.76 2.54 1.52 9.95 min. 13. R.25 1.78.76 2.54 1.52 7.7 11.5 R.25 1.78.76 PACKAGE MARKING (example of 3X17T) 3 Notes Only options 1, 7, and 8 are reflected in the package marking The VDE logo is only marked on option1 parts Tape and reel suffix (T) is not part of the package marking V YWW 24 Rev. 2.3, 8Feb17 7 Document Number: 81753 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
PACKING INFORMATION (in millimeters) TUBE PACKING TYPE UNITS/TUBE TUBES/BOX UNITS/BOX DIP4, standard and option 6 1 4 4 TAPE AND REEL PACKING TYPE UNITS/TUBE SMD4, option 7 and option 9 1 SMD4, option 8 2 Top cover tape 17998 Embossed carrier Fig. 17 Tape and Reel Shipping Medium Embossment 1 pitch cumulative tolerance on tape ±.2.35 ±.1 2 ±.1 4 ±.1 1.55 +.1 1.75 ±.1 7.5 ±.1 4.65 ±.1 16 ±.3 5 max. 5 max. X X 12 ±.1 1.5 ±.1 4.55 ±.1 1.3 ±.1 Section XX Fig. 18 Tape and Reel Packing for Option 7 and Option 9 (1 units per reel) Rev. 2.3, 8Feb17 8 Document Number: 81753 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
.35 ±.1 2 ±.1 4 ±.1 1.5 ±.1 1.75 ±.1 11.5 ±.1 12.5 ±.1 24 ±.3 5 max. 5 max. X X 8 ±.1 1.5 ±.1 3.9 ±.1 4.65 ±.1 Section XX R.76 Fig. 19 Tape and Reel Packing for Option 8 (2 units per reel) Rev. 2.3, 8Feb17 9 Document Number: 81753 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
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