STPSC12065-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

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Automotive 650 V power Schottky silicon carbide diode Datasheet - production data K Features A TO-220AC K AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability PPAP capable Operating Tj from -40 C to 175 C ECOPACK 2 compliant component A K K K NC A D²PAK Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Symbol IF(AV) VRRM Table 1: Device summary Value 12 A 650 V Tj (max.) 175 C VF (typ.) 1.30 V November 2017 DocID029271 Rev 2 1/12 This is information on a product in full production. www.st.com

Characteristics STPSC12065-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 C to +175 C) 650 V IF(RMS) Forward rms current 22 A IF(AV) Average forward current Tc = 145 C, DC (1) 12 A IFRM IFSM Repetitive peak forward current Surge non repetitive forward current Tc =145 C, Tj = 175 C, δ = 0.1 53 A tp = 10 ms sinusoidal, Tc = 25 C 50 tp = 10 ms sinusoidal, Tc = 125 C 40 tp = 10 µs square, Tc = 25 C 220 Tstg Storage temperature range -55 to +175 C Notes: Tj Operating junction temperature (2) -40 to +175 C (1) Value based on Rth(j-c) max. (2) (dptot/dtj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. A Table 3: Thermal parameters Value Symbol Parameter Typ. Max. Unit Rth(j-c) Junction to case 0.85 1.25 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 15 150 IR (1) VF (2) Reverse leakage current Forward voltage drop Notes: (1) Pulse test: tp = 5 ms, δ < 2% (2) Pulse test: tp = 500 µs, δ < 2% VR = VRRM Tj = 150 C - 200 1000 Tj = 25 C VR = 600 V 8 50 Tj = 25 C - 1.30 1.45 Tj = 150 C IF = 12 A - 1.45 1.65 Tj = 175 C - 1.50 µa V To evaluate the conduction losses use the following equation: P = 1.02 x IF(AV) + 0.065 x IF 2 (RMS) 2/12 DocID029271 Rev 2

Table 5: Dynamic electrical characteristics Characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit QCj (1) Total capacitive charge VR = 400 V - 36 - nc Cj Notes: Total capacitance (1) Most accurate value for the capacitive charge: Q cj (V R ) = C j (V)dV V R 0 VR = 0 V, Tc = 25 C, F = 1 MHz - 750 - VR = 400 V, Tc = 25 C, F = 1 MHz - 60 - pf DocID029271 Rev 2 3/12

Characteristics STPSC12065-Y 1.1 Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values) I F (A) 24 Pulse test : t p =500µs T a =-40 C 20 T a =25 C 16 T a =100 C Figure 2: Reverse leakage current versus reverse voltage applied (typical values) I R (µa) 1.E+03 T j =175 C 1.E+02 T j =150 C 1.E+01 12 8 T a =150 C T a =175 C 1.E+00 4 VF(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1.E-01 T j =25 C VR(V) 1.E-02 0 50 100 150 200 250 300 350 400 450 500 550 600 650 80 60 Figure 3: Peak forward current versus case temperature IM(A) T δ=0.1 δ=tp/t tp 800 700 600 Figure 4: Junction capacitance versus reverse voltage applied (typical values) C j (pf) F=1 MHz V O SC =30 mv RMS T j =25 C 500 40 δ=0.3 δ=0.5 400 300 20 δ=1 δ=0.7 TC( C) 0 0 25 50 75 100 125 150 175 200 100 VR(V) 0 0.1 1.0 10.0 100.0 1000.0 Figure 5: Relative variation of thermal impedance junction to case versus pulse duration Z th(j-c) /R th(j-c) 1.0 1.E+03 Figure 6: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) I FSM (A) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1.E+02 T a =25 C T a =125 C 0.2 Single pulse 0.1 t p(s) 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 tp(s) 1.E-05 1.E-04 1.E-03 1.E-02 4/12 DocID029271 Rev 2

40 35 30 25 20 15 10 Figure 7: Total capacitive charges versus reverse voltage applied (typical values) QCj(nC) 5 VR(V) 0 0 50 100 150 200 250 300 350 400 Characteristics Figure 8: Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, ecu = 35 μm) R th(j-a) ( C/W) 80 70 60 50 40 30 20 D²PAK 10 S Cu (cm²) 0 0 5 10 15 20 25 30 35 40 DocID029271 Rev 2 5/12

Package information STPSC12065-Y 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N m Maximum torque value: 0.7 N m 2.1 TO-220AC package information Figure 9: TO-220AC package outline 6/12 DocID029271 Rev 2

Package information Table 6: TO-220AC package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. ØI 3.75 3.85 0.147 0.151 DocID029271 Rev 2 7/12

Package information 2.2 D²PAK package information Figure 10: D²PAK package outline STPSC12065-Y 8/12 DocID029271 Rev 2

Package information Table 7: D²PAK package mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.028 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 7.50 7.75 8.00 0.295 0.305 0.315 D2 1.10 1.30 1.50 0.043 0.051 0.060 E 10 10.40 0.394 0.409 E1 8.50 8.70 8.90 0.335 0.343 0.346 E2 6.85 7.05 7.25 0.266 0.278 0.282 e 2.54 0.100 e1 4.88 5.28 0.190 0.205 H 15 15.85 0.591 0.624 J1 2.49 2.69 0.097 0.106 L 2.29 2.79 0.090 0.110 L1 1.27 1.40 0.049 0.055 L2 1.30 1.75 0.050 0.069 R 0.4 0.015 V2 0 8 0 8 DocID029271 Rev 2 9/12

Package information Figure 11: D²PAK recommended footprint (dimensions are in mm) STPSC12065-Y 10/12 DocID029271 Rev 2

Ordering information 3 Ordering information Table 8: Ordering information Order code Marking Package Weight Base qty. Delivery mode STPSC12065DY PSC12065DY TO-220AC 1.86 g 50 Tube STPSC12065GY-TR PSC12065GY D²PAK 1.48 g 1000 Tape and reel 4 Revision history Table 9: Document revision history Date Revision Changes 10-May-2016 1 First issue. 06-Nov-2017 2 Added D²PAK package. DocID029271 Rev 2 11/12

IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2017 STMicroelectronics All rights reserved 12/12 DocID029271 Rev 2

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