Last class. This class. CCDs Fancy CCDs. Camera specs scmos

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Transcription:

CCDs and scmos

Last class CCDs Fancy CCDs This class Camera specs scmos

Fancy CCD cameras: -Back thinned -> higher QE -Unexposed chip -> frame transfer -Electron multiplying -> higher SNR -Fancy ADC -> higher frame rates

EMCCD specs Key Specifications Active Pixels 1024 x 1024 Pixel Size 13 x 13 µm Image Area (mm) 13.3 x 13.3 Image Area Pixel Well Depth 80,000 e- Max. Readout Rate Frame Rate Read Noise 30 MHz 26-9690 fps < 1 e- with EM gain QE max > 90%

Intensified CCDs Intensified CCDs are the marriage between photomultiplier tubes and CCDs Photocathode array converts incoming light to electrons Electrons travel down high voltage gain Electrons crash into phosphor screen which creates photons CCD camera detects photons Application of high voltage sets whether or not you ll see anything on the camera ICCDs can be gated at very high time resolutions Still takes normal amount of time to read them out

FLIM surgery ICCD applications Wide field FLIM Good for applications needing very high time resolution Also useful for extreme low light imaging Reflectance oximetry Plasma dynamics

CCD artifacts Cosmic rays usually light up as a few pixels. Noticeable because they re completely saturated. Good software filters exist to get rid of them Dead pixels some pixels might not respond to light any more Blooming oversatured pixel will bleed into vertical neighbors during charge readout

Sources of noise Dark current Thermally generating electrons Cool sensors down to -80 C Readout Rate Electronic noise during conversion of electrons to votlages Electron multiplication gain Pixelation error Non-uniform pixel sizes Buy expensive camera Shot noise Fundamental noise of light collection Goes as N No solution, use bright samples

Dark current Thermally generating electrons Cool sensors down to -80 C Readout Rate Electronic noise during conversion of electrons to voltages Electron multiplication gain Shot noise Fundamental noise of light collection Goes as N No solution, use bright samples

Signal to noise ratio - redux At very dim light levels, the read noise becomes the dominant source of noise, but we get over that hump with EM Binning on EMCCD gets around read noise. Since a 2x2 region (4 pixels) gets summed together, and then read out, increases overall signal to noise Binning also reduces image time fewer pixels means less time with ADC Binning reduces single pixel dynamic range SSSSSSSSSSSS = QQQQ NN ppp SSSSSSS nnnnnnnnnn = Ideal, noiseless camera: SSSSSS = QQQQ NN ppp QQQQ NN ppp = SSSSSS = More realistic camera QQQQ NN ppp QQQQ NN ppp QQQQ NN ppp QQQQ NN ppp 2 + DDDDDDDD + δδ rrrrrrrr

Camera parameters

CMOS cameras

CMOS cameras Complimentary Metal Oxide Silicon Each pixel has it s own amplifier Each row of pixels has it s own ADC converter Images can be read much faster Many ADCs allow for higher number of pixels (like your cell phone) 20 megapixel is no problem (it would take 700 ms to read out with fancy EMCCD)

CMOS limitations Extra circuitry takes up physical room, reducing effective QE (lower fill factor) Each amplifier has it s own characteristics, leads to fixed gain variations across chips Many cheap amplifiers mean that the dynamic range is often lower Data transfer to ta computer has to occur REALLY fast Feature CCD CMOS Higher fill factor means Lower fill factor means lower light higher light sensitivity. The sensitivity, because circuits are integrated light sensitive elements are in Sensitivity in between the pixels. the surface of the sensor. Image Quality Windowing Speed System design Electronic shutters reduce the aperture only slightly. Better uniformity as the same electronic generates the value for each pixel. Only a few transistors are involved and generate lower noise. Always the whole sensor needs to be read out. Higher read out clock reduce image quality of a CCD chip. Image processing is done outside the chip. Good electronics around the CCD is necessary to get good images. Electronic affects the image quality directly. The required transistors for global shutters reduce the aperture. Each circuit has its own characteristics, which generates fixed pattern noise in the image. Several transistors with individual differences generate higher noise. Single pixels can be addressed. Clocking and digitization is done in the CMOS-chip, image processing can be done also inside. Digitization is done in the CMOS-chip itself. You need less and easier components around. Image quality is mainly influenced by the chip.

Scientific CMOS (scmos) enables new imaging scmos is a number of new features that are branded into one new name Use microlenses to increase effective fill factor (and QE) Use fancy electronics to tune each amplifier to give consistent gain across the entire image Fancy electronics also give higher dynamic range Fancy electronics also reduce read noise

Rolling shutter scmos cameras use a rolling shutter to read out pixels. This decreases the total read time, and reduces dead time Each line is read out, and before it finishes, the next one starts Entire read out of scmos camera takes < 1 ms Imaging really fast things will result in error

State of the art scmos cameras Quantum efficency Imaging device Effective no. of pixels Cell size Effective area Full well capacity Readout speed Readout noise Exposure time Cooling method Cooling temperature Dark current 82 % peak QE Scientific CMOS Sensor 2048 (H) 2048 (V) 6.5 μm 6.5 μm 13.312 mm 13.312 mm 30 000 electrons (typ.) 100 frames/s (Full resolution, Camera Link) 30 frames/s (Full resolution, USB 3.0) Standard scan (at 100 frames/s, typ.):1.6 electrons rms (1.0 electrons median) Slow scan (at 30 frames/s, typ.): 1.4 electrons rms (0.8 electrons median) Internal trigger mode: 1 ms to 10 s (at full resolution) *1 Internal trigger mode with sub-array readout: 38.96 μs to 10 s External trigger mode with sub-array readout: 1 ms to 10 s Peltier cooling Forced air (Ambient at +20 ): -10 Water (+20 ): -20 Water (+15 ): -30 0.06 electrons/pixel/s (-10 ) (typ.) 0.02 electrons/pixel/s (-20 ) (typ.) 0.006 electrons/pixel/s (-30 ) (typ.)

Back thinned scmos 95% Quantum Efficiency 11µm x 11µm Pixel Area 1200 x 1200 array - 1.44 Megapixel 1.6e- Read Noise 80,000e- Pixel Full Well 61,500:1 Dynamic Range 41fps @ 16-bit 82fps @ 12-bit

Large field of view and embedded signal processing 18 x 18 mm chip size larger field of view Enables use of the full objective field number More pixels = more data Larger file size, and longer data transfer