Low Capacitance, Low Charge Injection, ±15 V/+12 V icmos SPST in SOT-23 ADG1201/ADG1202

Similar documents
Low Capacitance, Low Charge Injection, ±15 V/+12 V, icmos, SPST in SOT-23 ADG1201

±15 V/12 V Quad SPST Switches ADG1311/ADG1312/ADG1313

0.28 Ω CMOS 1.65 V to 3.6 V Single SPST Switches in SC70 ADG841/ADG842

CMOS Low Voltage 2.5 Ω Dual SPDT Switch ADG736L

CMOS ±5 V/+5 V, 4 Ω Dual SPST Switches ADG621/ADG622/ADG623

Low Capacitance, Low Charge Injection, ±15 V/12 V icmos, Dual SPDT Switch ADG1236

1.5 Ω On Resistance, ±15 V/12 V/±5 V, 4:1, icmos Multiplexer ADG1404

CMOS, Low Voltage, 4 Ω Dual SPST Switches in 3 mm 2 mm LFCSP ADG721/ADG722/ADG723

CMOS Low Voltage 2 Ω SPST Switches ADG701/ADG702

CMOS Low Voltage 2.5 Ω Dual SPDT Switch ADG736

3 V/5 V CMOS 0.5 Ω SPDT/2:1 Mux in SC70 ADG849

High Voltage Latch-Up Proof, Single SPST Switch ADG5401

1 Ω Typical On Resistance, ±5 V, +12 V, +5 V, and +3.3 V, 4:1 Multiplexer ADG1604

Low Capacitance, Low Charge Injection, ±15 V/+12 V icmos Dual SPST Switches ADG1221/ADG1222/ADG1223

0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX ADG836L

Quad SPDT ±15 V/+12 V Switches ADG1334

1.3 Ω CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package ADG859

0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX ADG839

0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 Mux in Mini LFCSP Package ADG824

4 Ω RON, 4-/8-Channel ±15 V/+12 V/±5 V icmos Multiplexers ADG1408/ADG1409

4 Ω RON, 4-/8-Channel ±15 V/+12 V/±5 V icmos Multiplexers ADG1408-EP/ADG1409-EP

Low Capacitance, 16- and 8-Channel ±15 V/+12 V icmos Multiplexers ADG1206/ADG1207

CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23 ADG719-EP

CMOS, Low Voltage RF/Video, SPST Switch ADG751

LC 2 MOS Precision 5 V Quad SPST Switches ADG661/ADG662/ADG663

0.58 Ω CMOS, 1.8 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP ADG858

0.5 Ω CMOS 1.65 V TO 3.6 V 4-Channel Multiplexer ADG804

0.5 Ω CMOS, Dual 2:1 MUX/SPDT Audio Switch ADG884

CMOS, Low Voltage RF/Video, SPDT Switch ADG752

2.1 Ω On Resistance, ±15 V/+12 V/±5 V, ADG1419. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAMS APPLICATIONS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS

1.5 Ω On Resistance, ±15 V/12 V/±5 V, icmos, Dual SPDT Switch ADG1436

CMOS 1.8 V to 5.5 V, 2.5 2:1 MUX/SPDT Switch in SC70 Package ADG749

CMOS, 1.8 V to 5.5 V/±2.5 V, 3 Ω Low Voltage 4-/8-Channel Multiplexers ADG708/ADG709

ADG1411/ADG1412/ADG1413

CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23 ADG719

1 Ω Typical On Resistance, ±5 V, +12 V, +5 V, and +3.3 V Dual SPDT Switches ADG1636

LC 2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409

Quad SPDT Switch ADG333A

1 pc Charge Injection, 100 pa Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch ADG636

High Voltage, Latch-up Proof, 4-Channel Multiplexer ADG5404

CMOS, 1.8 V to 5.5 V/±2.5 V, 3 Ω Low Voltage 4-/8-Channel Multiplexers ADG708/ADG709

CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux in Chip Scale Package ADG784

ADG1606/ADG Ω RON, 16-Channel, Differential 8-Channel, ±5 V,+12 V,+5 V, and +3.3 V Multiplexers FEATURES FUNCTIONAL BLOCK DIAGRAMS

0.5 Ω CMOS, 1.8 V to 5.5 V, Dual SPDT/2:1 Mux, Mini LFCSP ADG854

LC2 MOS Precision 5 V/3 V Quad SPST Switches ADG511/ADG512/ADG513

Dual SPDT Switch ADG436

High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers ADG5408/ADG5409

CMOS Low Power Dual 2:1 Mux/Demux USB 2.0 (480 Mbps)/USB 1.1 (12 Mbps) ADG772

2.5 Ω CMOS Low Power Dual 2:1 Mux/Demux USB 1.1 Switch ADG787

<0.5 Ω CMOS, 1.65 V to 3.6 V, Quad SPST Switches ADG811/ADG812/ADG813

0.4 Ω CMOS, Dual DPDT Switch in WLCSP/LFCSP/TSSOP ADG888

LC 2 MOS Precision Mini-DIP Analog Switch ADG419

LC 2 MOS 8-/16-Channel High Performance Analog Multiplexers ADG406/ADG407/ADG426

High Temperature, High Voltage, Latch-Up Proof, 8-Channel Multiplexer ADG5298

LC 2 MOS 5 Ω RON SPST Switches ADG451/ADG452/ADG453

Low Voltage, 400 MHz, Quad 2:1 Mux with 3 ns Switching Time ADG774A

CMOS, ±5 V/+5 V, 4 Ω, Single SPDT Switches ADG619/ADG620

8-Channel Fault-Protected Analog Multiplexer ADG528F

Fault Protection and Detection, 10 Ω RON, Quad SPST Switches ADG5412F-EP

High Voltage Latch-Up Proof, Single SPDT Switch ADG5419

LC 2 MOS Quad SPST Switches ADG441/ADG442/ADG444

9.5 Ω RON, ±15 V/+12 V/±5 V icmos, Serially-Controlled Octal SPST Switches ADG1414

Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video Switch ADG794

High Voltage Latch-Up Proof, Triple/Quad SPDT Switches ADG5433/ADG5434

Low Voltage, 400 MHz, Quad 2:1 Mux with 3 ns Switching Time ADG774A

CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux ADG774

Fault Protection and Detection, 10 Ω RON, 4-Channel Multiplexer ADG5404F

2.5 V/3.3 V, 2:1 Multiplexer/ Demultiplexer Bus Switch ADG3248

High Speed, 3.3 V/5 V Quad 2:1 Mux/Demux (4-Bit, 1 of 2) Bus Switch ADG3257

16-/32-Channel, Serially Controlled V to 5.5 V, 2.5 V, Analog Multiplexers ADG725/ADG731

ADG918/ADG919. Wideband 4 GHz, 43 db Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches

Fault Protection and Detection, 10 Ω RON, Dual SPDT Switch ADG5436F

SGM Ω, 300MHz, Low-Power Full-Speed USB (12Mbps) Switch

High Performance, 145 MHz FastFET Op Amps AD8065/AD8066

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers

Octal, 16-Bit DAC with 5 ppm/ C On-Chip Reference in 14-Lead TSSOP AD5668-EP

FEATURES APPLICATIONS. Switches are shown for a Logic 0 Input

ADG918/ADG919. Wideband 4 GHz, 43 db Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT FEATURES FUNCTIONAL BLOCK DIAGRAMS APPLICATIONS

DATASHEET. Features. Applications. Pin Configuration. Ordering Information HI-201/883. Quad SPST CMOS Analog Switch. FN7990 Rev.0.

TITLE MICROCIRCUIT, LINEAR, LC 2 MOS, QUAD SPST SWITCHES, MONOLITHIC SILICON REVISIONS LTR DESCRIPTION DATE APPROVED REV PAGE REV PAGE REV

Rail-to-Rail, High Output Current Amplifier AD8397

The UM4684 is a sub 1Ω (0.5Ω at 2.7V) dual SPDT analog switch designed for low voltage

10-Channel Gamma Buffer with VCOM Driver ADD8710

TABLE OF CONTENTS Specifications... 3 Absolute Maximum Ratings... 4 ESD Caution... 4 Pin Configurations and Function Descriptions... 5 Terminology...

Precision Monolithic Quad SPST CMOS Analog Switches

S 500µA (typ) Supply Current S TSSOP 16-Pin Package S -40 C to +85 C Ambient Temperature Range S Functionally Compatible to DG411, DG412, and DG413

Microprocessor Supervisory Circuit ADM1232

Low Power, Rail-to-Rail Output, Precision JFET Amplifiers AD8641/AD8642/AD8643

SGM Ω, 300MHz, Low-Power Full-Speed USB (12Mbps) Switch

Low-Voltage Single SPDT Analog Switch

Dual SPDT Analog Switch

Low Power, Precision, Auto-Zero Op Amps AD8538/AD8539 FEATURES Low offset voltage: 13 μv maximum Input offset drift: 0.03 μv/ C Single-supply operatio

High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G

ADA485-/ADA485- TABLE OF CONTENTS Features... Applications... Pin Configurations... General Description... Revision History... Specifications... 3 Spe

User Defined Fault Protection and Detection,10 Ω RON, Quad Channel Protector ADG5462F

4Ω, High Speed, Low Voltage Dual, DPDT Analog Switch

Ultraprecision, 36 V, 2.8 nv/ Hz Dual Rail-to-Rail Output Op Amp AD8676

Very Low Distortion, Precision Difference Amplifier AD8274

Low-Voltage, High-Speed, Quad, SPST CMOS Analog Switches

MP2735/MP2736 Low-Voltage 0.45Ω Dual SPDT Analog Switches

Transcription:

Low Capacitance, Low Charge Injection, ±15 V/+12 V icmo PT in OT-23 AG121/AG122 FEATURE 2.4 pf off capacitance <1 pc charge injection Low leakage;.6 na maximum @ 85 C 12 Ω on resistance Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 6-lead OT-23 package APPLICATION Automatic test equipment ata acquisition systems Battery-powered systems ample-and-hold systems Audio signal routing Video signal routing Communication systems GENERAL ECRIPTION The AG121/AG122 are monolithic complementary metal-oxide semiconductor (CMO) devices containing an PT switch designed in an icmo (industrial CMO) process. icmo is a modular manufacturing process combining high voltage CMO and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMO processes, icmo components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size. The ultralow capacitance and charge injection of these switches make them ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth make the parts suitable for video signal switching. FUNCTIONAL BLOCK IAGRAM AG121 IN AG122 WITCHE HOWN FOR A LOGIC 1 INPUT Figure 1. icmo construction ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments. The AG121/AG122 contain a single-pole/single-throw (PT) switch. Figure 1 shows that with a logic input of 1, the switch of the AG121 is closed and that of the AG122 is open. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. PROUCT HIGHLIGHT 1. Ultralow capacitance. 2. <1 pc charge injection. 3. Ultralow leakage. 4. 3 V logic-compatible digital inputs: VIH = 2. V, VIL =.8 V. 5. No VL logic power supply required. 6. OT-23 package. IN 6576-1 Rev. Information furnished by Analog evices is believed to be accurate and reliable. However, no responsibility is assumed by Analog evices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. pecifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog evices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 916, Norwood, MA 262-916, U..A. Tel: 781.329.47 www.analog.com Fax: 781.461.3113 28 Analog evices, Inc. All rights reserved.

TABLE OF CONTENT Features... 1 Applications... 1 Functional Block iagram... 1 General escription... 1 Product Highlights... 1 Revision History... 2 pecifications... 3 ual upply... 3 ingle upply... 4 Absolute Maximum Ratings...5 E Caution...5 Pin Configuration and Function escriptions...6 Typical Performance Characteristics...7 Test Circuits... 1 Terminology... 12 Outline imensions... 13 Ordering Guide... 13 REVIION HITORY 2/8 Revision : Initial Version Rev. Page 2 of 16

PECIFICATION UAL UPPLY V = 15 V ± 1%, V = 15 V ± 1%, GN = V, unless otherwise noted. Table 1. Parameter 25 C 4 C to +85 C B Version 1 4 C to +125 C Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V V On Resistance (RON) 12 Ω typ V = +13.5 V, V = 13.5 V 2 24 27 Ω max V = ±1 V, I = 1 ma; see Figure 2 On Resistance Flatness (RFLAT(ON)) 2 Ω typ V = 5 V, V, and +5 V; I = 1 ma 6 72 79 Ω max LEAKAGE CURRENT V = +16.5 V, V = 16.5 V ource Off Leakage, I (Off) ±.4 na typ V = ±1 V, V = ±1 V; see Figure 21 ±.1 ±.6 ±1 na max rain Off Leakage, I (Off) ±.4 na typ V = ±1 V, V = ±1 V; see Figure 21 ±.1 ±.6 ±1 na max Channel On Leakage, I, I (On) ±.4 na typ V = V = ±1 V; see Figure 22 ±.15 ±.6 ±1 na max IGITAL INPUT Input High Voltage, VINH 2. V min Input Low Voltage, VINL.8 V max Input Current, IINL or IINH.5 μa typ VIN = VINL or VINH ±.1 μa max igital Input Capacitance, CIN 2.5 pf typ YNAMIC CHARACTERITIC 2 ton 14 ns typ RL = 3 Ω, CL = 35 pf 17 2 23 ns max V = 1 V; see Figure 26 toff 9 ns typ RL = 3 Ω, CL = 35 pf 15 13 141 ns max V = 1 V; see Figure 26 Charge Injection.8 pc typ V = V, R = Ω, CL = 1 nf; see Figure 27 Off Isolation 8 db typ RL = 5 Ω, CL = 5 pf, f = 1 MHz; see Figure 23 Total Harmonic istortion + Noise.15 % typ RL = 1 kω, 5 V rms, f = 2 Hz to 2 khz 3 db Bandwidth 66 MHz typ RL = 5 Ω, CL = 5 pf; see Figure 24 C (Off) 2.4 pf typ V = V, f = 1 MHz 3 pf max V = V, f = 1 MHz C (Off) 2.8 pf typ V = V, f = 1 MHz 3.3 pf max V = V, f = 1 MHz C, C (On) 4.7 pf typ V = V, f = 1 MHz 5.6 pf max V = V, f = 1 MHz POWER REQUIREMENT V = +16.5 V, V = 16.5 V I.1 μa typ igital inputs = V or V 1. μa max I 6 μa typ igital inputs = 5 V 95 μa max I.1 μa typ igital inputs = V, 5 V or V 1. μa max V/V ±5 to ±16.5 V min/max GN = V 1 Temperature range for B version is 4 C to +125 C. 2 Guaranteed by design, not subject to production test. Rev. Page 3 of 16

INGLE UPPLY V = 12 V ± 1%, V = V, GN = V, unless otherwise noted. Table 2. Parameter 25 C B Version 1 4 C to +85 C 4 C to +125 C Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V V On Resistance (RON) 3 Ω typ V = 1.8 V, V = V 475 567 625 Ω max V = V to 1 V, I = 1 ma; see Figure 2 On Resistance Flatness (RFLAT(ON)) 6 Ω typ V = 3 V, 6 V, and 9 V, I = 1 ma LEAKAGE CURRENT V = 13.2 V, V = V ource Off Leakage, I (Off) ±.6 na typ V = 1 V or 1 V, V = 1 V or 1 V; see Figure 21 ±.1 ±.6 ±1 na max rain Off Leakage, I (Off) ±.6 na typ V = 1 V or 1 V, V = 1 V or 1 V; see Figure 21 ±.1 ±.6 ±1 na max Channel On Leakage, I, I (On) ±.4 na typ V = V = 1 V or 1 V; see Figure 22 ±.15 ±.6 ±1 na max IGITAL INPUT Input High Voltage, VINH 2. V min Input Low Voltage, VINL.8 V max Input Current, IINL or IINH.1 μa typ VIN = VINL or VINH ±.1 μa max igital Input Capacitance, CIN 3 pf typ YNAMIC CHARACTERITIC 2 ton 19 ns typ RL = 3 Ω, CL = 35 pf 25 295 34 ns max V = 8 V; see Figure 26 toff 12 ns typ RL = 3 Ω, CL = 35 pf 155 19 21 ns max V = 8 V; see Figure 26 Charge Injection.8 pc typ V = 6 V, R = Ω, CL = 1 nf; see Figure 27 Off Isolation 8 db typ RL = 5 Ω, CL = 5 pf, f = 1 MHz; see Figure 23 3 db Bandwidth 52 MHz typ RL = 5 Ω, CL = 5 pf; see Figure 24 C (Off) 2.7 pf typ V = 6 V, f = 1 MHz 3.3 pf max V = 6 V, f = 1 MHz C (Off) 3.1 pf typ V = 6 V, f = 1 MHz 3.6 pf max V = 6 V, f = 1 MHz C, C (On) 5.3 pf typ V = 6 V, f = 1 MHz 6.3 pf max V = 6 V, f = 1 MHz POWER REQUIREMENT V = 13.2 V I.1 μa typ igital inputs = V or V 1. μa max I 6 μa typ igital inputs = 5 V 95 μa max V +5/+16.5 V min/max V = V, GN = V 1 Temperature range for B version is 4 C to +125 C. 2 Guaranteed by design, not subject to production test. Rev. Page 4 of 16

ABOLUTE MAXIMUM RATING TA = 25 C, unless otherwise noted. Table 3. Parameter Rating V to V 35 V V to GN.3 V to +25 V V to GN +.3 V to 25 V Analog Inputs 1 V.3 V to V +.3 V or 3 ma, whichever occurs first igital Inputs 1 GN.3 V to V +.3 V or 3 ma, whichever occurs first Peak Current, or 1 ma (pulsed at 1 ms, 1% duty cycle maximum) Continuous Current per 3 ma Channel, or Operating Temperature Range 4 C to +125 C Industrial (B Version) torage Temperature Range 65 C to +15 C Junction Temperature 15 C 6 Lead OT-23 θja,thermal Impedance 229.6 C/W θjc, Thermal Impedance 91.99 C/W Reflow oldering Peak 26 C Temperature, Pb-free tresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E CAUTION 1 Overvoltages at IN,, or are clamped by internal diodes. Current should be limited to the maximum ratings given. Rev. Page 5 of 16

PIN CONFIGURATION AN FUNCTION ECRIPTION V 1 GN 2 V 3 AG121/ AG122 TOP VIEW (Not to cale) IN Figure 2. OT-23 Pin Configuration 6 5 4 6576-2 Table 4. Pin Function escriptions Pin No. Mnemonic escription 1 V Most Positive Power upply Potential. 2 GN Ground ( V) Reference. 3 V Most Negative Power upply Potential. 4 ource Terminal. Can be an input or output. 5 rain Terminal. Can be an input or output. 6 IN Logic Control Input. Table 5. AG121/AG122 Truth Table AG121 IN AG122 IN witch Condition 1 On 1 Off Rev. Page 6 of 16

TYPICAL PERFORMANCE CHARACTERITIC ON REITANCE (Ω) 2 18 16 14 12 1 8 6 T A = +25ºC V = +13.5V V = 13.5V V = +15V V = 15V V = +16.5V V = 16.5V ON REITANCE (Ω) 25 2 15 1 V = +15V V = 15V T A = 4 C T A = +125 C T A = +85 C T A = +25 C 4 5 ON REITANCE (Ω) 2 18 15 12 9 6 3 3 6 9 12 15 18 OURCE OR RAIN VOLTAGE (V) Figure 3. On Resistance as a Function of V (V) for ual upply 45 4 35 3 25 2 15 1 5 T A = +25 C V = +5.5V V = 5.5V 5 4 3 2 1 1 2 3 4 5 OURCE OR RAIN VOLTAGE (V) Figure 4. On Resistance as a Function of V (V) for ual upply 6576-3 6576-4 ON REITANCE (Ω) 15 1 5 5 1 15 OURCE OR RAIN VOLTAGE (V) Figure 6. On Resistance as a Function of V (V) for ifferent Temperatures, ual upply 6 5 4 3 2 1 V = +12V V = V T A = +85 C T A = 4 C T A = +25 C T A = +125 C 2 4 6 8 1 12 OURCE OR RAIN VOLTAGE (V) Figure 7. On Resistance as a Function of V (V) for ifferent Temperatures, ingle upply 6576-6 6576-7 ON REITANCE (Ω) 45 4 35 3 25 2 15 1 5 T A = 25 C V = 1.8V V = V V = 13.2V V = V V = 12V V = V 2 4 6 8 1 12 OURCE OR RAIN VOLTAGE (V) 6576-5 LEAKAGE CURRENT (pa) 2 15 1 5 5 1 15 2 25 3 35 4 V = +15V V = 15V V BIA = ±1V I (OFF) + I (OFF) + I (OFF) + I (OFF) + I, I (ON) + + I, I (ON) 45 2 4 6 8 1 12 TEMPERATURE (ºC) 6576-28 Figure 5. On Resistance as a Function of V (V) for ingle upply Figure 8. Leakage Currents as a Function of Temperature, ual upply Rev. Page 7 of 16

LEAKAGE CURRENT (pa) 15 1 5 5 1 15 V = +5V V = 5V V BIA = ±4.5V I (OFF) + I (OFF) + 2 I (OFF) + I (OFF) + I, I (ON) + + I, I (ON) 25 2 4 6 8 1 12 TEMPERATURE (ºC) Figure 9. Leakage Currents as a Function of Temperature, ual upply 6576-26 CHARGE INJECTION (pc).5.4.3.2.1.1.2.3.4 T A = 25ºC V = +15V V = 15V V = +5V V = 5V V = 12V V = V.5 15 1 5 5 1 15 INPUT VOLTAGE (V) Figure 12. Charge Injection vs. ource Voltage 6576-22 3 25 2 V = 12V V = V V BIA = 1/1V 3 25 15V t OFF 15V t ON 12V t OFF 12V t ON LEAKAGE CURRENT (pa) 15 1 5 5 TIME (ns) 2 15 1 1 I (OFF) + I (OFF) + 15 I (OFF) + I (OFF) + I, I (ON) + + I, I (ON) 2 2 4 6 8 1 12 TEMPERATURE (ºC) 6576-27 5 4 2 2 4 6 8 1 12 TEMPERATURE (ºC) 6576-23 Figure 1. Leakage Currents as a Function of Temperature, ingle upply Figure 13. TON/TOFF Times vs. Temperature 12 1 I PER CHANNEL T A = 25ºC 2 V = 15V V = 15V T A = 25ºC I (µa) 8 6 4 V = +15V V = 15V OFF IOLATION (db) 4 6 8 2 V = 12V V = V 2 4 6 8 1 12 14 LOGIC LEVEL, INx (V) 6576-21 1 12 1k 1k 1M 1M 1M FREQUNCY (Hz) 1G 6576-16 Figure 11. I vs. Logic Level Figure 14. Off Isolation vs. Frequency Rev. Page 8 of 16

6 INERTION LO (de) 2 4 6 8 1 V = 15V V = 15V T A = 25ºC CAPACITANCE (pf) 5.5 5 4.5 4 3.5 3 OURCE/RAIN ON RAIN OFF V = 12V V = V T A = 25ºC 12 14 1k 1k 1M 1M 1M 1G 6576-17 2.5 OURCE OFF 2 2 4 6 8 1 12 6576-19 FREQUNCY (Hz) INPUT VOLTAGE (V) Figure 15. On Response vs. Frequency Figure 18. Capacitance vs. Input Voltage, ingle upply 1 LOA = 1kΩ T A = 25 C 1 2 V = +15V V = 15V Vp-p =.63V T A = 25ºC NO ECOUPLING CAP ON 1 3 TH + N (%).1 V = +5V, V = 5V, V = +3.5V rms V = +15V, V = 15V, V = +5V rms ACPRR (db) 4 5 6 7 ECOUPLING CAP ON 8.1 1 1 1k 1k 1k FREQUENCY (Hz) Figure 16. TH + N vs. Frequency 6576-24 9 1 1k 1M 1M FREQUENCY (Hz) Figure 19. ACPRR vs. Frequency 6576-25 1M 6 5.5 5 V = 15V V = 15V T A = 25ºC CAPACITANCE (pf) 4.5 4 3.5 OURCE/RAIN ON 3 RAIN OFF 2.5 OURCE OFF 2 15 1 5 5 1 15 INPUT VOLTAGE (V) Figure 17. Capacitance vs. Input Voltage, ual upply 6576-18 Rev. Page 9 of 16

TET CIRCUIT V.1µFV.1µF V V NETWORK ANALYZER I IN 5Ω 5Ω V V1 V IN GN R L 5Ω V OUT V R ON = V1/I 6576-8 OFF IOLATION = 2 LOG V OUT V 6576-13 Figure 2. On Resistance Figure 23. Off Isolation V.1µFV.1µF V V NETWORK ANALYZER IN 5Ω V I (OFF) A I (OFF) A V IN GN R L 5Ω V OUT V Figure 21. Off Leakage V 6576-9 INERTION LO = 2 LOG V OUT WITH WITCH V OUT WITHOUT WITCH Figure 24. Bandwidth 6576-14 V.1µFV.1µF V V AUIO PRECIION R NC NC = NO CONNECT I (ON) A V 6576-1 V IN IN GN R L 1kΩ V OUT V V p-p 6576-15 Figure 22. On Leakage Figure 25. TH + Noise Rev. Page 1 of 16

V.1µFV.1µF V V V IN AG121 5% 5% V IN R L 3Ω V OUT C L 35pF V IN V OUT AG122 5% 5% 9% 9% GN t ON t OFF 6576-11 Figure 26. witching Times V V R V V V OUT V IN AG121 ON OFF V IN C L 1nF V IN AG122 GN V OUT Q INJ = C L ΔV OUT ΔV OUT 6576-12 Figure 27. Charge Injection Rev. Page 11 of 16

TERMINOLOGY I The positive supply current. I The negative supply current. V (V) The analog voltage on Terminal and Terminal. RON The ohmic resistance between and. RFLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance, as measured over the specified analog signal range. I (Off) The source leakage current with the switch off. I (Off) The drain leakage current with the switch off. I, I (On) The channel leakage current with the switch on. VINL The maximum input voltage for Logic. VINH The minimum input voltage for Logic 1. IINL (IINH) The input current of the digital input. C (Off) The off switch source capacitance, measured with reference to ground. C (Off) The off switch drain capacitance, measured with reference to ground. C, C (On) The on switch capacitance, measured with reference to ground. CIN The digital input capacitance. ton The delay between applying the digital control input and the output switching on. ee Figure 26. toff The delay between applying the digital control input and the output switching off. ee Figure 26. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching. Off Isolation A measure of unwanted signal coupling through an off switch. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Bandwidth The frequency at which the output is attenuated by 3 db. On Response The frequency response of the on switch. Insertion Loss The loss due to the on resistance of the switch. TH + N The ratio of the harmonic amplitude plus noise of the signal to the fundamental. ACPRR (AC Power upply Rejection Ratio) Measures the ability of a part to avoid coupling noise and spurious signals that appear on the supply voltage pin to the output of the switch. The dc voltage on the device is modulated by a sine wave of.62 V p-p. The ratio of the amplitude of signal on the output to the amplitude of the modulation is the ACPRR. Rev. Page 12 of 16

OUTLINE IMENION 2.9 BC 6 5 4 1.6 BC 2.8 BC 1 2 3 PIN 1 INICATOR.95 BC 1.3 1.15.9 1.9 BC.15 MAX.5.3 1.45 MAX EATING PLANE.22.8 1 4.6.45.3 COMPLIANT TO JEEC TANAR MO-178-AB Figure 28. 6-Lead mall Outline Transistor Package [OT-23] (RJ-6) imensions shown in millimeters ORERING GUIE Model Temperature Range Package escription Package Option Branding AG121BRJZ-R2 1 4 C to +125 C 6-Lead mall Outline Transistor Package [OT-23] RJ-6 25 AG121BRJZ-REEL7 1 4 C to +125 C 6-Lead mall Outline Transistor Package [OT-23] RJ-6 25 AG122BRJZ-R2 1 4 C to +125 C 6-Lead mall Outline Transistor Package [OT-23] RJ-6 26 AG122BRJZ-REEL7 1 4 C to +125 C 6-Lead mall Outline Transistor Package [OT-23] RJ-6 26 1 Z = RoH Compliant Part. Rev. Page 13 of 16

NOTE Rev. Page 14 of 16

NOTE Rev. Page 15 of 16

NOTE 28 Analog evices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. 6576--2/8() Rev. Page 16 of 16