EF Series Power MOSFET with Fast Body Diode SiHP33N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.98 Q g (Max.) (nc) 55 Q gs (nc) 22 Q gd (nc) 43 Configuration Single D TO22AB G G DS S NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free and Halogenfree FEATURES Fast body diode MOSFET using E series technology Reduced t rr, Q rr, and I RRM Low figureofmerit (FOM): R on x Q g Low input capacitance (C iss ) Reduced switching and conduction losses Ultra low gate charge (Q g ) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Telecommunications Server and telecom power supplies Lighting Highintensity discharge (HID) Light emitting diodes (LEDs) Consumer and computing ATX power supplies Industrial Welding Battery chargers Renewable energy Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies LLC Phase shifted bridge (ZVS) 3level inverter AC/DC bridge TO22AB SiHP33N6EFGE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 6 GateSource Voltage V GS ± 3 V Continuous Drain Current (T J = 5 C) V GS at V T C = 25 C 33 I D T C = C 2 A Pulsed Drain Current (Typical) a I DM Linear Derating Factor 2.2 W/ C Single Pulse Avalanche Energy b E AS 69 mj Maximum Power Dissipation P D 278 W Operating Junction and Storage Temperature Range T J, T stg 55 to 5 C DrainSource Voltage Slope T J = 25 C 7 dv/dt Reverse Diode dv/dt d 5 V/ns Soldering Recommendations (Peak Temperature) c for s 3 C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. V DD = 5 V, starting T J = 25 C, L = 28.2 mh, R g = 25, I AS = 7 A. c..6 mm from case. d. I SD I D, di/dt = 9 A/μs, starting T J = 25 C. S7295Rev. C, 27Feb7 Document Number: 9592 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiHP33N6EF THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 62 Maximum JunctiontoCase (Drain) R thjc.45 C/W SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage V GS = V, I D = 25 μa 6 V Temperature Coefficient /T J Reference to 25 C, I D = ma.72 V/ C GateSource Threshold Voltage (N) V GS(th) = V GS, I D = 25 μa 2. 4. V GateSource Leakage I GSS V GS = ± 2 V ± na V GS = ± 3 V ± μa = 48 V, V GS = V Zero Gate Voltage Drain Current I DSS = 48 V, V GS = V, T J = 25 C 5 μa DrainSource OnState Resistance R DS(on) V GS = V I D = 6.5 A.85.98 Forward Transconductance a g fs = 3 V, I D = 6.5 A 2 S Dynamic Input Capacitance C iss V GS = V, 3454 Output Capacitance C oss = V, 54 Reverse Transfer Capacitance C rss f = MHz 8 Effective Output Capacitance, Energy pf Related b C o(er) 2 V GS = V, = V to 48 V Effective Output Capacitance, Time Related c C o(tr) 437 Total Gate Charge Q g 3 55 GateSource Charge Q gs V GS = V I D = 6.5 A, = 48 V 22 nc GateDrain Charge Q gd 43 TurnOn Delay Time t d(on) 28 56 Rise Time t r V DD = 48 V, I D = 6.5 A 43 86 TurnOff Delay Time t d(off) R g = 9., V GS = V 6 242 ns Fall Time t f 48 96 Gate Input Resistance R g f = MHz, open drain.2.5. DrainSource Body Diode Characteristics MOSFET symbol D Continuous SourceDrain Diode Current I S 33 showing the G integral reverse Pulsed Diode Forward Current I SM S p n junction diode A Diode Forward Voltage V SD T J = 25 C, I S = 6.5 A, V GS = V.9.2 V Reverse Recovery Time t rr 62 324 ns T J = 25 C, I F = I S = 6.5 A, Reverse Recovery Charge Q rr. 2. μc di/dt = A/μs, V R = 4 V Reverse Recovery Current I RRM 3 A Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. C oss(er) is a fixed capacitance that gives the same energy as C oss while is rising from % to 8 %. c. C oss(tr) is a fixed capacitance that gives the charging time as C oss while is rising from % to 8 %. S7295Rev. C, 27Feb7 2 Document Number: 9592 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiHP33N6EF TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I D, DraintoSource Current (A) 2 8 6 4 2 TOP 5 V 4 V 3 V 2 V V V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 25 C R DS(on), DraintoSource OnResistance (Normalized) 3. 2.5 2..5..5 I D = 6.5 A V GS = V 5 5 2 25 3, DraintoSource Voltage (V) Fig. Typical Output Characteristics 6 4 2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. 4 Normalized OnResistance vs. Temperature I D, DraintoSource Current (A) 8 6 4 2 TOP 5 V 4 V 3 V 2 V V V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 5 C C, Capacitance (pf) C iss C oss C rss V GS = V, f = MHz C iss = C gs C gd, C ds shorted C rss = C gd C oss = C ds C gd 5 5 2 25 3, DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics 2 3 4 5 6, DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage 2 25 5 2 I D, DraintoSource Current (A) 8 6 4 2 T J = 5 C C oss (pf) 5 C oss E oss 5 5 E oss (μj) = 26.4 V 5 5 2 25 V GS, GatetoSource Voltage (V) Fig. 3 Typical Transfer Characteristics 5 2 3 4 5 6 Fig. 6 C oss and E oss vs. S7295Rev. C, 27Feb7 3 Document Number: 9592 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiHP33N6EF V GS, GatetoSource Voltage (V) 24 2 6 2 8 4 = 48 V = 3 V = 2 V I D, Drain Current (A) 4 3 2 4 8 2 6 2 Q g, Total Gate Charge (nc) 25 5 75 25 5 T C, Case Temperature ( C) Fig. 7 Typical Gate Charge vs. GatetoSource Voltage Fig. Maximum Drain Current vs. Case Temperature 75 I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V..2.4.6.8..2.4.6 V SD, SourceDrain Voltage (V), DraintoSource Breakdown Voltage (V) 725 7 675 65 625 6 575 I D = 25 μa 55 6 4 2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. 8 Typical SourceDrain Diode Forward Voltage Fig. Typical DraintoSource Voltage vs. Temperature Operation in this Area Limited by R DS(on) I DM Typical I D, Drain Current (A). Limited by R DS(on) * T C = 25 C T J = 5 C Single Pulse BVDSS Limited, DraintoSource Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Fig. 9 Maximum Safe Operating Area μs ms ms S7295Rev. C, 27Feb7 4 Document Number: 9592 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiHP33N6EF Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse..... Pulse Time (s) Fig. 2 Normalized Thermal Transient Impedance, JunctiontoCase R D t p V GS D.U.T. V DD R G V DD V Pulse width µs Duty factor. % I AS Fig. 3 Switching Time Test Circuit Fig. 6 Unclamped Inductive Waveforms 9 % V Q G Q GS Q GD % V GS t d(on) t r t d(off) t f V G Charge Fig. 4 Switching Time Waveforms Fig. 7 Basic Gate Charge Waveform Vary t p to obtain required I AS L Current regulator Same type as D.U.T. 5 kω R G V t p I AS D.U.T. Ω V DD 2 V V GS.2 µf.3 µf D.U.T. V DS 3 ma Fig. 5 Unclamped Inductive Test Circuit I G I D Current sampling resistors Fig. 8 Gate Charge Test Circuit S7295Rev. C, 27Feb7 5 Document Number: 9592 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiHP33N6EF Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period V GS = V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 9 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?9592. S7295Rev. C, 27Feb7 6 Document Number: 9592 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Package Information TO22 D L H() Q L() E 2 3 M * b() Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.24 4.65.67.83 b.69.2.27.4 b().4.78.45.7 c.36.6.4.24 D 4.33 5.85.564.624 E 9.96.52.392.44 e 2.4 2.67.95.5 e() 4.88 5.28.92.28 F.4.4.45.55 H() 6. 6.7.24.264 J() 2.4 2.92.95.5 L 3.36 4.4.526.567 L() 3.33 4.4.3.59 Ø P 3.53 3.94.39.55 Q 2.54 3...8 ECN: X5364Rev. C, 4Dec5 DWG: 63 Note M* =.52 inches to.64 inches (dimension including protrusion), heatsink hole for HVM e b C e() J() ASE Package Picture Xi an Revison: 4Dec5 Document Number: 66542 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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