NJG12KA1 Wide Band Low Noise Amplifier GaAs MMIC GENERAL DESCRIPTION The NJG12KA1 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial application. To achieve wide dynamic range, the NJG12KA1 offers high gain mode and low gain mode. Selecting high gain mode for weak signals, the NJG12KA1 helps improve receiver sensitivity through high gain and low noise figure. Selecting low gain mode for strong signals, it bypasses LNA circuit to offer higher linearity. An small and ultra-thin package of FLP6-A1 is adopted. PACKAGE OUTLINE NJG12KA1 APPLICATIONS Terrestrial application like Digital TV, Set-top box FEATURES Operating frequency 4 to 9MHz Package size FLP6-A1 (Package size: 1.6x1.6x.mm typ.) [ LNA mode, : Operating voltage 3.3V ] Operating current ma typ. Small signal gain 18.dB typ. Noise figure 1.2dB typ. @f=4 to MHz.9dB typ. @f= to 9MHz [ Bypass mode, : Operating voltage V ] Insertion loss 1.dB typ. 2nd order intermodulation distortion 7dB typ. 3rd order intermodulation distortion 8dB typ. PIN CONFIGURATION 4 RFIN GND 6 (Top View) Logic Circuit Bias Circuit 3 RFOUT2 2 GND 1 Pin connection 1. RFOUT1 2. GND 3. RFOUT2 4. RFIN. GND 6. VCTL VCTL RFOUT1 TRUTH TABLE 1pin Index H =V CTL(H) L =V CTL(L) V CTL LNA Bypass Mode select H ON OFF LNA mode L OFF ON Bypass mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.18-3-14-1 -
NJG12KA1 ABSOLUTE MAXIMUM RATINGS T a =+ C, Z s =Z l = PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain voltage V DD. V Control voltage V CTL. V Input power P IN V DD =3.3V +1 dbm Power dissipation P D 4-layer FR4 PCB with through-hole (74.2x74.2mm), T j = C 8 mw Operating temperature T opr -4 to +8 C Storage temperature T stg - to + C ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) V DD =3.3V, T a =+ C, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V DD 2.3 3.3 3.6 V Control voltage (High) V CTL(H) 1.3 1.8 3.6 V Control voltage (Low) V CTL(L)... V Operating current1 I DD 1 RF OFF, V CTL =1.8V - 4 ma Operating current2 I DD 2 RF OFF, V CTL =V - 17 3 μa Control current I CTL RF OFF, V CTL =1.8V - 6 μa - 2 -
NJG12KA1 ELECTRICAL CHARACTERISTICS2 (RF CHARACTERISTICS: LNA mode, ) V DD =3.3V, V CTL =1.8V, freq=4 to 9MHz, T a =+ C, Z S =Z l =, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain1 Gain1 Exclude PCB & connector losses (Note1). 18.. db Gain flatness1 Gflat1-1. 2. db Noise figure1_1 Noise figure1_2 Input power 1dB compression1 Input 3rd order intercept point1 2nd order intermodulation distortion1 3rd order intermodulation distortion1 NF1_1 NF1_2 freq=4 to MHz, Exclude PCB & connector losses (Note2) freq= to 9MHz, Exclude PCB & connector losses (Note2) - 1.2 2. db -.9 1.4 db P-1dB(IN)1-1. -. - dbm IIP3_1 IM2_1 IM3_1 f1=freq, f2=freq+1khz, P IN =-dbm f1=mhz, f2=mhz, fmeas=7mhz, P IN 1=P IN 2=-dBm f1=6mhz, f2=6mhz, fmeas=7mhz, P IN 1=P IN 2=-dBm +. +7. - dbm 18. 28. - db 3. 4. - db Isolation1 ISL1. 19. - db RFIN VSWR1 VSWRi1-2. 4. - RFOUT VSWR1 VSWRo1-1. 2.4 - (Note1) Input and output PCB, connector losses:.14db(4mhz),.88db(6mhz),.121db(9mhz) (Note2) Input PCB and connector losses:.7db(4mhz),.44db(6mhz),.6db(9mhz) - 3 -
NJG12KA1 ELECTRICAL CHARACTERISTICS3 (RF CHARACTERISTICS: Bypass mode, ) V DD =3.3V, V CTL =V, freq=4 to 9MHz, T a =+ C, Z S =Z l =, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Insertion loss2 Input power 1dB compression2 Input 3rd order intercept point2 2nd order intermodulation distortion2 3rd order intermodulation distortion2 LOSS2 Exclude PCB & connector losses (Note1) - 1. 3. db P-1dB(IN)2 +8. +. - dbm IIP3_2 IM2_2 IM3_2 f1=freq, f2=freq+1khz, P IN =-2dBm f1=mhz, f2=mhz, fmeas=7mhz, P IN 1=P IN 2=-8dBm f1=6mhz, f2=6mhz, fmeas=7mhz, P IN 1=P IN 2=-8dBm +22. +3. dbm 6. 7. - db 7. 8. - db RFIN VSWR2 VSWRi2-1. 2. - RFOUT VSWR2 VSWRo2-1. 2. - (Note1) Input and output PCB, connector losses:.14db(4mhz),.88db(6mhz),.121db(9mhz) ELECTRICAL CHARACTERISTICS4 (RF CHARACTERISTICS: LNA mode, 7 ) V DD =3.3V, V CTL =1.8V, freq=4 to 9MHz, T a =+ C, Z S =Z l =7, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain3 Gain3 Exclude PCB & connector losses - 18. - db RFIN VSWR3 VSWRi3-2. - - RFOUT VSWR3 VSWRo3-2. - - ELECTRICAL CHARACTERISTICS (RF CHARACTERISTICS: Bypass mode, 7 ) V DD =3.3V, V CTL =V, freq=4 to 9MHz, T a =+ C, Z S =Z l =7, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Insertion loss4 LOSS4 Exclude PCB & connector losses - 1. - db Composite Second Order4 CSO4 132channels, CW, P IN =+dbmv - 8 - dbc Composite Triple Beat4 CTB4 132channels, CW, P IN =+dbmv - 8 - dbc RFIN VSWR4 VSWRi4-2. - - RFOUT VSWR4 VSWRo4-2. - - - 4 -
NJG12KA1 TERMINAL DESCRIPTION Pin No. SYMBOL DESCRIPTION 1 RFOUT1 2 GND 3 RFOUT2 4 RFIN GND 6 VCTL The RF output terminal of the LNA mode. This terminal doubles as the drain terminal of the LNA. Please connect this terminal to the power supply via choke inductor. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. The RF output terminal of the Bypass mode. Please connect this terminal with RFOUT1 terminal through DC blocking capacitor shown in the application circuit. RF input terminal. External capacitor C1 is required to block the DC bias voltage of internal circuit. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. Control voltage terminal. At this terminal, the switching of the LNA mode and Bypass mode is possible. - -
Pout, IM3 (dbm) IIP3, OIP3 (dbm) Gain (db) P-1dB(IN) (dbm) Gain (db) NF (db) Pout (dbm) NJG12KA1 ELECTRICAL CHARACTERISTICS (LNA mode, ) Conditions: V DD =3.3V, V CTL =1.8V, Ta= C, Zs=Zl=, with application circuit NF, Gain vs. frequency (freq=4~mhz) 3. Pout vs. Pin (freq=6mhz) 18 Gain 3. 1 16 2. 14 2. Pout 12 1. -1 1 1. NF 8. (Exclude PCB, Connector Losses) 6. 1 - P-1dB(IN)=-4.8dBm -3-4 -3 - -1 Pin (dbm) 19 Gain, IDD vs. Pin (freq=6mhz) 1 P-1dB(IN) vs. frequency (freq=4~9mhz) 18 Gain 8 17 16 6 4 IDD (ma) - IDD -1 P-1dB(IN)=-4.8dBm 14-4 -3 - -1 Pin (dbm) - 4 6 8 1 4 OIP3=+.8dBm Pout, IM3 vs. Pin (f1=6mhz, f2=f1+1khz) Pout 3 IIP3, OIP3 vs. frequency (f1=4~9mhz, f2=f1+1khz, Pin=-dBm) OIP3 - -4-6 IM3 1 IIP3 IIP3=+7.9dBm -8-4 -3 - -1 1 Pin (dbm) 4 6 8 1-6 -
ISL (db) RLi (db) RLo (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (LNA mode, ) Conditions: V DD =3.3V, V CTL =1.8V, Ta= C, Zs=Zl=, with application circuit RF IN Return Loss vs. frequency (freq=4~mhz) RF OUT Return Loss vs. frequency (freq=4~mhz) 1 1 1 1 Reverse Isolation vs. frequency (freq=4~mhz) 1 3 3 4 1-7 -
NJG12KA1 ELECTRICAL CHARACTERISTICS (LNA mode, ) Conditions: V DD =3.3V, V CTL =1.8V, Ta= C, Zs=Zl=, with application circuit S11, S22 S21, S12 VSWRi, VSWRo Zin, Zout S11, S22 MHz to GHz S21, S12 MHz to GHz - 8 -
IM2 (db) IM3 (db) P-1dB(IN) (dbm) IIP3 (dbm) Gain (db) NF (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (LNA mode, ) Conditions: V CTL =1.8V, Ta= C, Zs=Zl=, with application circuit 3 Gain vs. VDD (freq=6mhz) 4 NF vs. VDD 3 2 4MHz 1 6MHz 1 2. 2. 3. 3. 4. 2. 2. 3. 3. 4. P-1dB(IN) vs. VDD (freq=6mhz) IIP3 vs. VDD (f1=6mhz, f2=6.1mhz, Pin=-dBm) -2 1-4 -6-8 -1 2. 2. 3. 3. 4. - 2. 2. 3. 3. 4. IM2 vs. VDD (f1=mhz, f2=mhz, fmeas=7mhz, Pin1=Pin2=-dBm) 8 7 6 IM3 vs. VDD (f1=6mhz, f2=6mhz, fmeas=7mhz, Pin1=Pin2=-dBm) 1 8 6 4 3 1 2. 2. 3. 3. 4. 4 2. 2. 3. 3. 4. - 9 -
NJG12KA1 ELECTRICAL CHARACTERISTICS (LNA mode, ) Conditions: V CTL =1.8V, Ta= C, Zs=Zl=, with application circuit Reverse Isolation (db) K factor RLi (db) RLo (db) RF IN Return Loss vs. VDD (freq=6mhz) RF OUT Return Loss vs. VDD (freq=6mhz) 1 1 2. 2. 3. 3. 4. 2. 2. 3. 3. 4. 4 IDD vs. VDD (RF OFF) K factor vs. frequency (freq=mhz~ghz) 3 16 IDD (ma) 12 8 1 4 VDD 2.V VDD 3.3V VDD 4.V 2. 2. 3. 3. 4. 1 frequency (GHz) 1 Reverse Isolation vs. VDD (freq=6mhz) 3 2. 2. 3. 3. 4. - 1 -
IM2 (db) IM3 (db) P-1dB(IN) (dbm) IIP3 (dbm) Gain (db) NF (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (LNA mode, ) Conditions: V DD =3.3V, V CTL =1.8V, Zs=Zl=, with application circuit 3 Gain vs. Temperature (freq=6mhz) 4 NF vs. Temperature 3 2 4MHz 1 6MHz 1-4 - 4 6 8 1-4 - 4 6 8 1 P-1dB(IN) vs. Temperature (freq=6mhz) 12 IIP3 vs. Temperature (f1=6mhz, f2=6.1mhz, Pin=-dBm) -2 1-4 8-6 6-8 -4-4 6 8 1 4-4 - 4 6 8 1 IM2 vs. Temperature (f1=mhz, f2=mhz, fmeas=7mhz, Pin1=Pin2=-dBm) 8 7 6 IM3 vs. Temperature (f1=6mhz, f2=6mhz, fmeas=7mhz, Pin1=Pin2=-dBm) 1 8 6 4 3 1-4 - 4 6 8 1 4-4 - 4 6 8 1-11 -
Reverse Isolation (db) RLi (db) RLo (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (LNA mode, ) Conditions: V DD =3.3V, V CTL =1.8V, Zs=Zl=, with application circuit K factor RF IN Return Loss vs. Temperature (freq=6mhz) RF OUT Return Loss vs. Temperature (freq=6mhz) 1 1-4 - 4 6 8 1-4 - 4 6 8 1 1 Reverse Isolation vs. Temperature (freq=6mhz) K factor vs. frequency (freq=mhz~ghz) 16 12 8 4 Ta -4 o C Ta + o C Ta +8 o C 3-4 - 4 6 8 1 1 frequency (GHz) 4 IDD vs. Temperature (RF OFF) 3 IDD vs. Temperature (RF OFF) 3 IDD (ma) IDD (ma) 1 1 Ta -4 o C Ta + o C Ta +8 o C -4-4 6 8 1.. 1. 1. 2. VCTL (V) - 12 -
Pout, IM3 (dbm) IIP3, OIP3 (dbm) Loss (db) P-1dB(IN) (dbm) Loss (db) Pout (dbm) NJG12KA1 ELECTRICAL CHARACTERISTICS (Bypass mode, ) Conditions: V DD =3.3V, V CTL =V, Ta= C, Zs=Zl=, with application circuit Loss vs. frequency (freq=4~mhz) Pout vs. Pin (freq=6mhz) 1 1 2 3 4-1 Pout 6 (Exclude PCB, Connector Losses) 7 1 - P-1dB(IN)=+14.4dBm -3 - -1 1 Pin (dbm) Loss, IDD vs. Pin (freq=6mhz) P-1dB(IN) vs. frequency (freq=4~9mhz) 1 Loss 4 2 3 3 IDD (ma) 4 P-1dB(IN)=+14.4dBm IDD 1 1 - -1 1 Pin (dbm) 4 6 8 1 4 Pout, IM3 vs. Pin (f1=6mhz, f2=f1+1khz) 4 IIP3, OIP3 vs. frequency (f1=4~9mhz, f2=f1+1khz, Pin=-2dBm) OIP3=+33.6dBm 4 - Pout 3 IIP3-4 3 OIP3-6 IM3-8 IIP3=+34.4dBm -1-3 - -1 1 3 4 Pin (dbm) 4 6 8 1-13 -
RLi (db) RLo (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (Bypass mode, ) Conditions: V DD =3.3V, V CTL =V, Ta= C, Zs=Zl=, with application circuit RF IN Return Loss vs. frequency (freq=4~mhz) RF OUT Return Loss vs. frequency (freq=4~mhz) 1 1 1 1-14 -
NJG12KA1 ELECTRICAL CHARACTERISTICS (Bypass mode, ) Conditions: V DD =3.3V, V CTL =V, Zs=Zl=, with application circuit S11, S22 S21, S12 VSWRi, VSWRo Zin, Zout S11, S22 MHz to GHz S21, S12 MHz to GHz - -
IM2 (db) IM3 (db) P-1dB(IN) (dbm) IIP3 (dbm) Loss (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (Bypass mode, ) Conditions: V CTL =V, Ta= C, Zs=Zl=, with application circuit 4 Loss vs. VDD (freq=6mhz) 3 2 1 2. 2. 3. 3. 4. P-1dB(IN) vs. VDD (freq=6mhz) 4 IIP3 vs. VDD (f1=6mhz, f2=6.1mhz, Pin=-2dBm) 3 1 3 2. 2. 3. 3. 4. 2. 2. 3. 3. 4. IM2 vs. VDD (f1=mhz, f2=mhz, fmeas=7mhz, Pin1=Pin2=-8dBm) 8 7 6 IM3 vs. VDD (f1=6mhz, f2=6mhz, fmeas=7mhz, Pin1=Pin2=-8dBm) 1 8 6 4 3 1 2. 2. 3. 3. 4. 4 2. 2. 3. 3. 4. - 16 -
RLi (db) RLo (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (Bypass mode, ) Conditions: V CTL =V, Ta= C, Zs=Zl=, with application circuit RF IN Return Loss vs. VDD (freq=6mhz) RF OUT Return Loss vs. VDD (freq=6mhz) 1 1 2. 2. 3. 3. 4. 2. 2. 3. 3. 4. 4 IDD vs. VDD (RF OFF) 3 IDD (ua) 1 2. 2. 3. 3. 4. - 17 -
IM2 (db) IM3 (db) P-1dB(IN) (dbm) IIP3 (dbm) Loss (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (Bypass mode, ) Conditions: V DD =3.3V, V CTL =V, Zs=Zl=, with application circuit 4 Loss vs. Temperature (freq=6mhz) 3 2 1-4 - 4 6 8 1 P-1dB(IN) vs. Temperature (freq=6mhz) 4 IIP3 vs. Temperature (f1=6mhz, f2=6.1mhz, Pin=-2dBm) 3 1 3-4 - 4 6 8 1-4 - 4 6 8 1 IM2 vs. Temperature (f1=mhz, f2=mhz, fmeas=7mhz, Pin1=Pin2=-8dBm) 8 7 6 IM3 vs. Temperature (f1=6mhz, f2=6mhz, fmeas=7mhz, Pin1=Pin2=-8dBm) 1 8 6 4 3 1-4 - 4 6 8 1 4-4 - 4 6 8 1-18 -
RLi (db) RLo (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (Bypass mode, ) Conditions: V DD =3.3V, V CTL =V, Zs=Zl=, with application circuit RF IN Return Loss vs. Temperature (freq=6mhz) RF OUT Return Loss vs. Temperature (freq=6mhz) 1 1-4 - 4 6 8 1-4 - 4 6 8 1 4 IDD vs. Temperature (RF OFF) 3 IDD (ua) 1-4 - 4 6 8 1-19 -
RLi (db) RLo (db) Gain (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (LNA mode, 7 ) Conditions: V DD =3.3V, V CTL =1.8V, Ta= C, Zs=Zl=7, with application circuit Gain vs. frequency (freq=4~mhz, Zs=Zl=7ohm) 18 16 14 12 1 8 (Exclude PCB, Connector Losses) 6 1 RF IN Return Loss vs. frequency (freq=4~mhz, Zs=Zl=7ohm) RF OUT Return Loss vs. frequency (freq=4~mhz, Zs=Zl=7ohm) 1 1 1 1 - -
RLi (db) RLo (db) Gain (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (LNA mode, 7 ) Conditions: V CTL =1.8V, Ta= C, Zs=Zl=7, with application circuit 3 Gain vs. VDD (freq=6mhz, Zs=Zl=7ohm) 1 2. 2. 3. 3. 4. RF IN Return Loss vs. VDD (freq=6mhz, Zs=Zl=7ohm) RF OUT Return Loss vs. VDD (freq=6mhz, Zs=Zl=7ohm) 1 1 2. 2. 3. 3. 4. 2. 2. 3. 3. 4. - 21 -
RLi (db) RLo (db) Gain (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (LNA mode, 7 ) Conditions: V DD =3.3V, V CTL =1.8V, Zs=Zl=7, with application circuit 3 Gain vs. Temperature (freq=6mhz, Zs=Zl=7ohm) 1-4 - 4 6 8 1 RF IN Return Loss vs. Temperature (freq=6mhz, Zs=Zl=7ohm) RF OUT Return Loss vs. Temperature (freq=6mhz, Zs=Zl=7ohm) 1 1-4 - 4 6 8 1-4 - 4 6 8 1-22 -
RLi (db) RLo (db) Loss (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (Bypass mode, 7 ) Conditions: V DD =3.3V, V CTL =V, Ta= C, Zs=Zl=7, with application circuit Loss vs. frequency (freq=4~mhz, Zs=Zl=7ohm) 1 2 3 4 6 (Exclude PCB, Connector Losses) 7 1 RF IN Return Loss vs. frequency (freq=4~mhz, Zs=Zl=7ohm) RF OUT Return Loss vs. frequency (freq=4~mhz, Zs=Zl=7ohm) 1 1 1 1-23 -
RLi (db) RLo (db) Loss (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (Bypass mode, 7 ) Conditions: V CTL =V, Ta= C, Zs=Zl=7, with application circuit 4 Loss vs. VDD (freq=6mhz, Zs=Zl=7ohm) 3 2 1 2. 2. 3. 3. 4. RF IN Return Loss vs. VDD (freq=6mhz, Zs=Zl=7ohm) RF OUT Return Loss vs. VDD (freq=6mhz, Zs=Zl=7ohm) 1 1 2. 2. 3. 3. 4. 2. 2. 3. 3. 4. - 24 -
RLi (db) RLo (db) Loss (db) NJG12KA1 ELECTRICAL CHARACTERISTICS (Bypass mode, 7 ) Conditions: V DD =3.3V, V CTL =V, Zs=Zl=7, with application circuit 4 Loss vs. Temperature (freq=6mhz, Zs=Zl=7ohm) 3 2 1-4 - 4 6 8 1 RF IN Return Loss vs. Temperature (freq=6mhz, Zs=Zl=7ohm) RF OUT Return Loss vs. Temperature (freq=6mhz, Zs=Zl=7ohm) 1 1-4 - 4 6 8 1-4 - 4 6 8 1 - -
NJG12KA1 APPLICATION CIRCUIT (Top view) RF IN C1.1u 4 3 C2.1u R1 18k RFIN RFOUT2 GND Bias Circuit 2 GND V CTL 6 Logic Circuit 1 L2 18n C3.1u RF OUT VCTL 1pin Index RFOUT1 R2 68 L1 47n C4.1u V DD TEST PCB LAYOUT (Top View) RFIN R1 C2 C3 RFOUT C1 R2 L2 L1 VCTL C4 VDD 1pin Index PCB: FR-4, t=.2mm Microstrip line width:.4mm PCB size: 16.8mm x 16.8mm Parts List Parts ID Manufacture L1 TAIYO-YUDEN HK168 Series L2 TAIYO-YUDEN HK Series C1~C4 MURATA GRM Series R1, R2 KOA RK73 Series PRECAUTIONS - C1 to C3 is DC-Blocking capacitors, and C4 is a bypass capacitor. - L1 is RF choke inductor. (DC feed inductor) - R1 is the resistance to adjust the operating current. - R2 is the resistance for stability. - L2 is the inductor to adjust the impedance matching. - All external parts, please be placed as close to the IC. - In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. - 26 -
NJG12KA1 MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer : Agilent 8973A Noise Source : Agilent 346A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : 4 Average mode : Point Bandwidth : 4MHz Loss comp : off Tcold : setting the temperature of noise source (33K) NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) Input ( ) Noise Source Drive Output * Noise source and NF analyzer are connected directly. Calibration Setup NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) IN DUT OUT Input ( ) Noise Source Drive Output * Noise source and DUT, DUT and NF analyzer are connected directly. Measurement Setup - 27 -
.1.1 1.2. 1.6. NJG12KA1 PACKAGE OUTLINE (FLP6-A1) 1.6..2.1.....2.1.13..22. Unit : mm Leads Material : Copper Leads Finish : SnBi Molding Material : Epoxy Resin Weight : 3.1mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 28 -