MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes. Features Ultrafast 25 and 5 Nanosecond Recovery Time 175 C Operating Junction Temperature Epoxy Meets UL 94 V @.125 in Low Forward Voltage Low Leakage Current Reverse Voltage to 6 V ESD Ratings: Machine Model = C (> 4 V) Human Body Model = 3B (> 16, V) SUR8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q1 Qualified and PPAP Capable These Devices are Pb Free and are RoHS Compliant* Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 26 C Max for Seconds ULTRAFAST RECTIFIERS 8. AMPERES, 5 6 VOLTS 1 3 TO 22AC CASE 221B STYLE 1 MARKING DIAGRAMS AY WWG U8xx KA 4 TO 22 FULLPAK CASE 221AG STYLE 1 AYWWG MURF86 KA A Y WW U8XX G KA = Assembly Location = Year = Work Week = Device Code xx = 5,, 15, 2, 4, or 6 = Pb Free Package = Diode Polarity *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Semiconductor Components Industries, LLC, 214 February, 214 Rev. 13 1 Publication Order Number: MUR82/D
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G MAXIMUM RATINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating Average Rectified Forward Current Total Device, (Rated V R ), T C = 15 C Symbol V RRM V RWM V R MUR/SUR8 85 8 815 82 84 86 Unit 5 15 2 4 6 V I F(AV) 8. A Peak Repetitive Forward Current (Rated V R, Square Wave, 2 khz), T C = 15 C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 6 Hz) I FM 16 A I FSM A Operating Junction Temperature and Storage Temperature Range T J, T stg 65 to +175 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS MUR/SUR8 Characteristic Symbol 85 8 815 82 84 86 Unit Maximum Thermal Resistance, Junction to Case R JC 3. 2. C/W Thermal Resistance, Junction to Case MURF86 R JC 4.75 Thermal Resistance, Junction to Ambient R JA 73 C/W C/W Thermal Resistance, Junction to Ambiente MURF86 R JA 75 C/W ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1) (i F = 8. A, T C = 15 C) (i F = 8. A, T C = 25 C) Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, T J = 15 C) (Rated DC Voltage, T J = 25 C) Maximum Reverse Recovery Time (I F = A, di/dt = 5 A/ s) (I F =.5 A, i R = A, I REC =.25 A) Symbol MUR/SUR8 85 8 815 82 84 86 v F.895.975 i R 25 5. t rr 35 25 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 3 s, Duty Cycle 2.%. 1.3 5 6 5 1.2 1.5 Unit V A ns 2
I i MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G MUR85G, MUR8G, MUR815G, MUR82G, SUR882G, INSTANTANEOUS FORWARD CURRENT (AMPS) F 7 5 3 2 7. 5. 3. 2..7.5.3.2 T J = 175 C C 25 C.1.2.3.4.5.6.7.8.9 1.1 1.2, REVERSE CURRENT ( A) F(AV) I R T J = 175 C.1.1 2 4 6 8 12 14 16 18 2 9. 8. 7. 6. 5. 4. 3. 2. V R, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* * The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V R is sufficiently below rated V R. 14 15 C 25 C 16 RATED V R APPLIED 17 18 v F, INSTANTANEOUS VOLTAGE (VOLTS) T C, CASE TEMPERATURE ( C) Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case I F(AV) 14 12 8. 6. 4. 2. R JA = 16 C/W R JA = 6 C/W (NO HEAT SINK) 2 4 6 8 12 14 16 18 2 P F(AV), AVERAGE POWER DISSIPATION (WATTS) 9. 8. 7. 6. 5. 4. 3. 2. T J = 175 C 2. 3. 4. 5. 6. 7. 8. 9. T A, AMBIENT TEMPERATURE ( C) Figure 4. Current Derating, Ambient I F(AV) Figure 5. Power Dissipation 3
I MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G MUR84G, SUR884G, INSTANTANEOUS FORWARD CURRENT (AMPS) i F 7 5 3 2 7. 5. 3. 2..7.5.3.2.1.4 T J = 175 C 25 C C.6.8 1.2 1.4 1.6, REVERSE CURRENT ( A) I R F(AV).1.1 5 15 2 25 3 35 4 45 5 9. 8. 7. 6. 5. 4. 3. 2. 14 15 V R, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Reverse Current* 16 17 T J = 175 C C 25 C * The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V R is sufficiently below rated V R. 15 C RATED V R APPLIED 18 v F, INSTANTANEOUS VOLTAGE (VOLTS) T C, CASE TEMPERATURE ( C) Figure 6. Typical Forward Voltage Figure 8. Current Derating, Case I F(AV) 14 12 8. 6. 4. 2. R JA = 16 C/W R JA = 6 C/W (NO HEAT SINK) 2 4 6 8 12 14 16 18 2 P F(AV), AVERAGE POWER DISSIPATION (WATTS) 9. 8. 7. 6. 5. 4. 3. 2. T J = 175 C 2. 3. 4. 5. 6. 7. 8. 9. T A, AMBIENT TEMPERATURE ( C) Figure 9. Current Derating, Ambient I F(AV) Figure. Power Dissipation 4
, INSTANTANEOUS FORWARD CURRENT (AMPS) I F I i F(AV) 1 MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G.1.4 C T J = 15 C.6.8 1.2 1.4 1.6 v F, INSTANTANEOUS VOLTAGE (VOLTS) Figure 11. Typical Forward Voltage 9. RATED V R APPLIED 8. 7. 6. 5. 4. 3. 2. 14 15 16 17 18 T C, CASE TEMPERATURE ( C) Figure 13. Current Derating, Case MUR86G, MURF86G 25 C 1.8, REVERSE CURRENT ( A) I R I F(AV).1 T J = 15 C.1 2 3 4 5 9. 8. 7. 6. 5. 4. 3. 2. C 25 C V R, REVERSE VOLTAGE (VOLTS) Figure 12. Typical Reverse Current* * The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V R is sufficiently below rated V R. T A, AMBIENT TEMPERATURE ( C) R JA = 16 C/W R JA = 6 C/W (NO HEAT SINK) 6 2 4 6 8 12 14 16 18 2 Figure 14. Current Derating, Ambient, AVERAGE POWER DISSIPATION (WATTS) F(AV) P 14 13 12 11 9. 8. 7. 6. 5. 4. 3. 2. 2. SQUARE WAVE T J = 175 C 3. 4. 5. 6. 7. 8. 9., NON-REPETITIVE SURGE CURRENT (A) FSM, 1, 1,, I F(AV) Figure 15. Power Dissipation t p, PULSE DURATION ( s) Figure 16. Typical Non Repetitive Surge Current * Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table. 5
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).5.2.1.5.2 MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G D =.5.1.5.1 SINGLE PULSE.1.1.2.5.1.2.5 2. 5. 2 5 2 5 t, TIME (ms) Figure 17. Thermal Response P (pk) t1 t 2 DUTY CYCLE, D = t 1 /t 2 Z JC(t) = r(t) R JC R JC = 1.5 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T 1 T J(pk) - T C = P (pk) Z JC(t) r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) ( C/W).1.1 D =.5.2.1.5.2.1 SINGLE PULSE P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2 Z JC (t) = r(t) R JC R JC = 1.6 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) Z JC (t).1.1.1.1.1.1 t, TIME (s).1 Figure 18. Thermal Response, (MURF86G) Junction to Case (R JC ) r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) ( C/W).1.1.1.1 D =.5.2.1.5.2.1 SINGLE PULSE.1.1.1.1 t, TIME (s) P (pk).1 t 1 t 2 DUTY CYCLE, D = t 1 /t 2 Z JC (t) = r(t) R JC R JC = 1.6 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) Z JC (t) Figure 19. Thermal Response, (MURF86G) Junction to Ambient (R JA ) 6
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G C, CAPACITANCE (pf) 5 2 5 2 T J = 25 C 2. 5. 2 5 V R, REVERSE VOLTAGE (V) Figure 2. Typical Capacitance ORDERING INFORMATION MUR85G MUR8G MUR815G MUR82G SUR882G MUR84G SUR884G MUR86G MURF86G Device Package Shipping TO 22AC TO 22AC TO 22AC TO 22AC TO 22AC TO 22AC TO 22AC TO 22AC TO 22FP 5 Units / Rail 5 Units / Rail 5 Units / Rail 5 Units / Rail 5 Units / Rail 5 Units / Rail 5 Units / Rail 5 Units / Rail 5 Units / Rail 7
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G PACKAGE DIMENSIONS TO 22 TWO LEAD CASE 221B 4 ISSUE F Q H L B 4 1 3 G D A K F T U R J C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.595.62 15.11 15.75 B.38.45 9.65.29 C.16.19 4.6 4.82 D.25.39.64 F.142.161 3.61 4.9 G.19.2 4.83 5.33 H.1.13 2.79 3.3 J.14.25.36.64 K.5.562 12.7 14.27 L.45.6 1.14 1.52 Q..12 2.54 3.4 R.8.1 2.4 2.79 S.45.55 1.14 1.39 T.235.255 5.97 6.48 U..5. 1.27 STYLE 1: PIN 1. CATHODE 2. N/A 3. ANODE 4. CATHODE E/2 Q L 3X b2 e e1 4 E 1 2 3 L1 D A 3X b C P.14 M B A M.25 M B A M TO 22 FULLPAK, 2 LEAD CASE 221AG ISSUE A C H1 c A B A1 NOTE 3 A2 SEATING PLANE STYLE 1: PIN 1. CATHODE 2. N/A 3. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.. MILLIMETERS DIM MIN MAX A 4.3 4.7 A1 2.5 2.9 A2 2.5 2.9 b.54.84 b2 1. 1.4 c.49.79 D 14.22 15.88 E 9.65.67 e 2.54 BSC e1 5.8 BSC H1 5.97 6.48 L 12.7 14.73 L1 --- 2.8 P 3. 3.4 Q 2.8 3.2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 33 675 2175 or 8 344 386 Toll Free USA/Canada Fax: 33 675 2176 or 8 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 29 Japan Customer Focus Center Phone: 81 3 5817 5 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MUR82/D