NPN 100m 50V Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr V CO I C Tr1 and Tr2 50V 100m 10k UMT6 UMH8N SOT-363 (SC-88) SMT6 IMH8 SOT-457 (SC-74) Faturs 1) Built-In Biasing Rsistors. 2) Two DTC114T chips in on packag. 3) Built-in bias rsistors nabl th configuration of an invrtr circuit without conncting xtrnal input rsistors (s innr circuit). 4) Th bias rsistors consist of thin-film rsistors with complt isolation to allow ngativ biasing of th input. Thy also hav th advantag of compltly liminating parasitic ffcts. 5) Only th on/off conditions nd to b st for opration, making th circuit dsign asy. 6) Lad Fr/RoHS Compliant. pplication Invrtr circuit, Intrfac circuit, Drivr circuit Innr circuit Collctor DTr1 mittr Bas DTr2 Collctor Bas mittr UMH8N mittr Bas IMH8 Collctor Bas DTr2 mittr DTr1 Collctor Packaging spcifications Part No. Packag Packag siz (mm) Taping cod Rl siz (mm) Tap width (mm) Basic ordring unit (pcs) Marking UMH8N UMT6 2021 TN 180 8 3,000 H8 IMH8 SMT6 2928 T110 180 8 3,000 H8 2014 ROHM Co., Ltd. ll rights rsrvd. 1/5 2014.10 - Rv.C
Data Sht bsolut maximum ratings (Ta = 25 C) <For DTr1 and DTr2 in common> Paramtr Symbol Valus Unit Collctor-bas voltag Collctor-mittr voltag mittr-bas voltag Collctor currnt Collctor Powr dissipation Junction tmpratur Rang of storag tmpratur V CBO 50 V V CO 50 V V BO 5 V I C *1 100 m UMH8N 150 (Total) *3 mw IMH8 P D *2 300 (Total) *4 mw T j 150 C T stg 55 to 150 C lctrical charactristics(ta = 25 C) <For DTr1 and DTr2 in common> Paramtr Symbol Conditions Min. Typ. Max. Unit Collctor-bas brakdown voltag BV CBO I C = 50 50 - - V Collctor-mittr brakdown voltag BV CO I C = 1m 50 - - V mittr-bas brakdown voltag I = 50 Collctor cut-off currnt I CBO V CB = 50V mittr cut-off currnt I BO V B = 4V Collctor-mittr saturation voltag BV BO V C(sat) I C / I B = 10m / 1m DC currnt gain h F V C = 5V, I C = 1m Input rsistanc - 5 - - V - - 0.5 - - 0.5 - - 0.3 V 100 250 600-7 10 13 k Transition frquncy f T *1 V C = 10V, I = 5m f = 100MHz *1 Charactristics of built-in transistor *2 ach trminal mountd on a rfrnc footprint *3 120mW pr lmnt must not b xcdd. *4 200mW pr lmnt must not b xcdd. - 250 - MHz 2014 ROHM Co., Ltd. ll rights rsrvd. 2/5 2014.10 - Rv.C
Data Sht lctrical charactristic curvs (Ta = 25 C) <For DTr1 and DTr2 in common> COLLCTOR CURRNT : I C [m] 0.01 Fig.1 Groundd mittr propagation charactristics 10 1 0.1 V C =5V Ta=100ºC 25ºC 40ºC COLLCTOR CURRNT : I C [m] Fig.2 Groundd mittr output charactristics 100 Ta=25ºC 80 60 40 20 I B = 500 450 400 350 300 250 200 150 100 50 0.001 0 0.5 1 1.5 2 0 0 5 10 0 BS TO MITTR VOLTG : V B [V] COLLCTOR TO MITTR VOLTG : V C [V] Fig.3 DC Currnt gain vs. Collctor Currnt Fig.4 Collctor-mittr saturation voltag vs. Collctor Currnt DC CURRNT GIN : h F COLLCTOR STURTION VOLTG : V C(sat) [V] COLLCTOR CURRNT : I C [m] COLLCTOR CURRNT : I C [m] 2014 ROHM Co., Ltd. ll rights rsrvd. 3/5 2014.10 - Rv.C
Data Sht Dimnsions (Unit : mm) UMT6 D Q c H L1 Lp b x S 1 y S 1 S l1 b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] MILIMTRS 0.80 1.00 0.031 0.039 1 0.00 0.10 0.000 0.004 0.25 0.010 b 0.15 0.30 0.006 0.012 c 0.10 0.20 0.004 0.008 D 1.90 2.10 0.075 0.083 1.15 1.35 0.045 0.053 0.65 0.026 H 2.00 2.20 0.079 0.087 L1 0.20 0.50 0.008 0.020 Lp 0.25 0.55 0.010 0.022 Q 0.10 0.30 0.004 0.012 x - 0.10-0.004 y - 0.10-0.004 MILIMTRS b2-0.40-0.016 1 1.55 0.061 l1-0.65-0.026 Dimnsion in mm / inchs 2014 ROHM Co., Ltd. ll rights rsrvd. 4/5 2014.10 - Rv.C
Data Sht Dimnsions (Unit : mm) SMT6 D c Q L1 Lp H b x S 1 y S 1 S l1 b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] MILIMTRS 1.00 1.30 0.039 0.051 1 0.00 0.10 0.000 0.004 0.25 0.010 b 0.25 0.40 0.010 0.016 c 0.09 0.25 0.004 0.010 D 2.80 3.00 0.110 0.118 1.50 1.80 0.059 0.071 0.95 0.037 H 2.60 3.00 0.102 0.118 L1 0.30 0.60 0.012 0.024 Lp 0.40 0.70 0.016 0.028 Q 0.20 0.30 0.008 0.012 x - 0.20-0.008 y - 0.10-0.004 MILIMTRS b2 0.60-0.024 1 2.10 0.083 l1-0.90-0.035 Dimnsion in mm / inchs 2014 ROHM Co., Ltd. ll rights rsrvd. 5/5 2014.10 - Rv.C
Notic Nots 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) Th information containd hrin is subjct to chang without notic. Bfor you us our Products, plas contact our sals rprsntativ and vrify th latst spcifications : lthough ROHM is continuously working to improv product rliability and quality, smiconductors can brak down and malfunction du to various factors. Thrfor, in ordr to prvnt prsonal injury or fir arising from failur, plas tak safty masurs such as complying with th drating charactristics, implmnting rdundant and fir prvntion dsigns, and utilizing backups and fail-saf procdurs. ROHM shall hav no rsponsibility for any damags arising out of th us of our Poducts byond th rating spcifid by ROHM. xampls of application circuits, circuit constants and any othr information containd hrin ar providd only to illustrat th standard usag and oprations of th Products. Th priphral conditions must b takn into account whn dsigning circuits for mass production. Th tchnical information spcifid hrin is intndd only to show th typical functions of and xampls of application circuits for th Products. ROHM dos not grant you, xplicitly or implicitly, any licns to us or xrcis intllctual proprty or othr rights hld by ROHM or any othr partis. ROHM shall hav no rsponsibility whatsovr for any disput arising out of th us of such tchnical information. Th Products ar intndd for us in gnral lctronic quipmnt (i.. V/O dvics, communication, consumr systms, gaming/ntrtainmnt sts) as wll as th applications indicatd in this documnt. Th Products spcifid in this documnt ar not dsignd to b radiation tolrant. For us of our Products in applications rquiring a high dgr of rliability (as xmplifid blow), plas contact and consult with a ROHM rprsntativ : transportation quipmnt (i.. cars, ships, trains), primary communication quipmnt, traffic lights, fir/crim prvntion, safty quipmnt, mdical systms, srvrs, solar clls, and powr transmission systms. Do not us our Products in applications rquiring xtrmly high rliability, such as arospac quipmnt, nuclar powr control systms, and submarin rpatrs. ROHM shall hav no rsponsibility for any damags or injury arising from non-complianc with th rcommndd usag conditions and spcifications containd hrin. ROHM has usd rasonabl car to nsur th accuracy of th information containd in this documnt. Howvr, ROHM dos not warrants that such information is rror-fr, and ROHM shall hav no rsponsibility for any damags arising from any inaccuracy or misprint of such information. Plas us th Products in accordanc with any applicabl nvironmntal laws and rgulations, such as th RoHS Dirctiv. For mor dtails, including RoHS compatibility, plas contact a ROHM sals offic. ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations. Whn providing our Products and tchnologis containd in this documnt to othr countris, you must abid by th procdurs and provisions stipulatd in all applicabl xport laws and rgulations, including without limitation th US xport dministration Rgulations and th Forign xchang and Forign Trad ct. 14) This documnt, in part or in whol, may not b rprintd or rproducd without prior consnt of ROHM. Thank you for your accssing to ROHM product informations. Mor dtail product informations and catalogs ar availabl, plas contact us. ROHM Customr Support Systm http:///contact/ 2014 ROHM Co., Ltd. ll rights rsrvd. R1102