N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 5 C 5 V V DGR T J = 25 C to 5 C; R GS = MΩ 5 V V GS Continuous ±2 V V GSM Transient ±3 V I D25 T c = 25 C 6 A I DM T c = 25 C, pulse width limited by T JM 96 A I AR T c = 25 C 6 A E AR T c = 25 C 2 mj dv/dt I S I DM, di/dt A/µs, V DD V DSS, T j 5 C, R G =.2Ω 5 V/ns I S = >2 V/ns GATE V DSS = 5 V I D25 = 6 A R DS(on) =.4 Ω P DC = 59 W DRAIN P DC 59 W P DHS T c = 25 C Derate.9W/ C above 25 C 284 W P DAMB T c = 25 C 3. W R thjc.25 C/W R thjhs.53 C/W Symbol Test Conditions Characteristic Values T J = 25 C unless otherwise specified min. typ. max. V DSS V GS = V, I D = 3 ma 5 V V GS(th) V DS = V GS, I D = 4 ma 3.5 4. 5.5 V I GSS V GS = ±2 V DC, V DS = ± na I DSS V DS =.8 V DSS T J = 25 C V GS = T J = 25 C R DS(on) V GS = 5 V, I D =.5I D25 Pulse test, t 3µS, duty cycle d 2% 5 µa ma.38 Ω g fs V DS = 2V, ID =.5 ID25 pulse test 3 5 8 S T J -55 +75 C SG Features SG2 Isolated Substrate high isolation voltage (>25V) excellent thermal transfer Increased temperature and power cycling capability IXYS advanced low Q g process Low gate charge and capacitances easier to drive faster switching Low R DS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages SD SD2 Optimized for RF and high speed switching at frequencies to MHz Easy to mount no insulators needed High power density T JM 75 C T stg -55 +75 C T L.6mm(.63 in) from case for s 3 C Weight 2 g
Symbol Test Conditions Characteristic Values (T J = 25 C unless otherwise specified) min. typ. max. R G.3 Ω C iss 65 pf C oss V GS = V, V DS =.8 V DSS(max), f = MHz 22 pf C rss 33 pf C stray Back Metal to any Pin 2 pf T d(on) 3 ns T on V GS = 5 V, V DS =.8 V DSS 2 ns I D =.5 I DM T d(off) R G =.2 Ω (External) 4 ns T off 5 ns Q g 5 nc Q gs V GS = V, V DS =.5 V DSS I D =.5 I D25 2 nc Q gd 24 nc -Drain Diode Characteristic Values (T J = 25 C unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = V 6 A I SM Repetitive; pulse width limited by T JM 98 A V SD I F = I S, V GS = V,.5 V Pulse test, t 3 µs, duty cycle 2% T rr 2 ns Q RM I F = I S, -di/dt = A/µs, V R = V.6 µc I RM 4 A For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,86,72 4,88,6 4,89,686 4,93,844 5,7,58 5,34,796 5,49,96 5,63,37 5,87,7 5,237,48 5,486,75 5,38,25 5,64,45
Fig. Fig. 2 Typical Output Characteristics ID, Drain Currnet (A) 6 5 4 3 2 Top 8-V 7.5V 7V 6.5V 6V 5.5V Bottom 5V ID, Drain Current (A) 6 5 4 3 2 Typical Transfer Characteristics V DS = 6V, PW = 4uS 2 3 4 5 6 V DS, Drain-to- Voltage (V) 5 6 7 8 9 V GS, Gate-to Voltage (V) Fig. 3 Fig. 4 Gate-to- Voltage vs. Gate Charge V DS = 25V, I D = 8A 4 Gate-to- Voltage (V) 2 8 6 4 2 2 4 6 8 Gate Charge (nc) Capacitance (pf) VD S vs. Capacitance 2 4 6 8 V DS Voltage (V) Ciss Coss Crss
Fig. 5 Package Drawing Gate Drain
5N6A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 6. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms L G, L S and L D. Rd is the R DS(ON) of the device, Rds is the resistive leakage term. The output capacitance, C OSS, and reverse transfer capacitance, C RSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. DRAIN Ld 4 2 GATE Lg Doff Roff Dcrs 5 6 D2crs 8 Rd Ron 2 3 M3 Dcos Rds Don 7 Ls Figure 6 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYS RF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de275-5n6a.html 3 SOURCE Net List: SYM=POWMOSN.SUBCKT 5N6A 2 3 * TERMINALS: D G S * 5 Volt 6 Amp.38 ohm N-Channel Power MOSFET * REVA 6-5- M 2 3 3 DMOS L=U W=U RON 5 6.2 DON 6 2 D ROF 5 7.2 DOF 2 7 D DCRS 2 8 D2 D2CRS 8 D2 CGS 2 3 2.N RD 4.38 DCOS 3 D3 RDS 3 5.MEG LS 3 3.5N LD 4 N LG 2 5 N.MODEL DMOS NMOS (LEVEL=3 VTO=3. KP=5.8).MODEL D D (IS=.5F CJO=P BV= M=.5 VJ=.7 TT=N RS=M).MODEL D2 D (IS=.5F CJO=45P BV=5 M=.4 VJ=.6 TT=N RS=M).MODEL D3 D (IS=.5F CJO=9P BV=5 M=.3 VJ=.3 TT=4N RS=M).ENDS Doc #92-222 Rev 5 29 IXYS RF An IXYS Company 24 Research Blvd., Suite 8 Fort Collins, CO USA 8526 97-493-9 Fax: 97-493-93 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com