EL Series Power MOSFET SiHA3N6AEL ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) 4 Q gd (nc) 9 Configuration Single G D S FEATURES Low figureofmerit (FOM) R on x Q g Low input capacitance (C iss ) Reduced switching and conduction losses Ultra low gate charge (Q g ) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting Highintensity discharge (HID) Fluorescent ballast lighting Industrial Welding Induction heating Motor drives Battery chargers Renewable energy Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb)free and halogenfree Thinlead TO22 FULLPAK SiHA3N6AELGE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drainsource voltage 6 V Gatesource voltage V GS ± 3 Continuous drain current (T J = 5 C) e V GS at V T C = 25 C 28 I D T C = C 8 A Pulsed drain current a I DM 68 Linear derating factor.3 W/ C Single pulse avalanche energy b E AS 353 mj Maximum power dissipation P D 39 W Operating junction and storage temperature range T J, T stg 55 to 5 C Reverse diode dv/dt d dv/dt 32 V/ns Soldering recommendations (peak temperature) c For s 26 C Mounting torque M3 screw.6 Nm Notes Initial samples marked as SiHA3N6BE a. Repetitive rating; pulse width limited by maximum junction temperature b. V DD = 2 V, starting T J = 25 C, L = 28.2 mh, R g = 25, I AS = 5 A c..6 mm from case d. I SD I D, di/dt = A/μs, starting T J = 25 C e. Limited by maximum junction temperature S873Rev. A, 2Feb8 Document Number: 9269 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiHA3N6AEL THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum junctiontoambient R thja 65 C/W Maximum junctiontocase (drain) R thjc 3.2 SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drainsource breakdown voltage V GS = V, I D = 25 μa 6 V temperature coefficient /T J Reference to 25 C, I D = ma.68 V/ C Gatesource threshold Voltage (N) V GS(th) = V GS, I D = 25 μa 2. 4. V V GS = ± 2 V ± na Gatesource leakage I GSS V GS = ± 3 V ± μa = 6 V, V GS = V Zero gate voltage drain current I DSS = 48 V, V GS = V, T J = 25 C μa Drainsource onstate resistance R DS(on) V GS = V I D = 5 A.5.2 Forward transconductance g fs = 2 V, I D = 5 A 9 S Dynamic Input capacitance C iss VGS = V, 2565 Output capacitance C oss = V, 9 Reverse transfer capacitance C rss f = MHz 6 Effective output capacitance, energy pf related a C o(er) 7 = V to 48 V, V GS = V Effective output capacitance, time related b C o(tr) 367 Total gate charge Q g 6 2 Gatesource charge Q gs V GS = V I D = 5 A, = 48 V 4 nc Gatedrain charge Q gd 9 Turnon delay time t d(on) 26 52 Rise time t r V DD = 48 V, I D = 5 A, 24 48 Turnoff delay time t d(off) V GS = V, R g = 9. 79 58 ns Fall time t f 33 66 Gate input resistance R g f = MHz, open drain.35.72.45 DrainSource Body Diode Characteristics MOSFET symbol Continuous sourcedrain diode current I S D 26 showing the integral reverse G Pulsed diode forward current I SM p n junction diode S 68 Diode forward voltage V SD T J = 25 C, I S = 5 A, V GS = V.2 V Reverse recovery time t rr 335 67 ns Reverse recovery charge Q rr T J = 25 C, I F = I S = 5 A, di/dt = A/μs, V R = 4 V 5.4.8 μc Reverse recovery current I RRM 3 A Notes a. C oss(er) is a fixed capacitance that gives the same energy as C oss while is rising from % to 8 % S b. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while is rising from % to 8 % S A S873Rev. A, 2Feb8 2 Document Number: 9269 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiHA3N6AEL TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I D, DraintoSource Current (A) 8 6 4 2 TOP 5 V 4 V 3 V 2 V V V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 25 C R DS(on), DraintoSource OnResistance (Normalized) 3. 2.5 2..5..5 I D = 5 A V GS = V 5 5 2, DraintoSource Voltage (V) Fig. Typical Output Characteristics 6 4 2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. 4 Normalized OnResistance vs. Temperature I D, DraintoSource Current (A) 5 4 3 2 TOP 5 V 4 V 3 V 2 V V V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 5 C C, Capacitance (pf) C iss C oss C rss V GS = V, f = MHz C iss = C gs C gd, C ds shorted C rss = C gd C oss = C ds C gd 5 5 2, DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics. 2 3 4 5 6, DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage I D, DraintoSource Current (A) 8 6 4 2 T J = 25 C T J = 5 C = 27.6 V 5 5 2 V GS, GatetoSource Voltage (V) C oss, Output Capacitance (pf) 6 5 4 2 C oss E oss 8 5 6 4 2 5 2 3 4 5 6, DraintoSource Voltage (V) E oss, Output Capacitance Stored Energy (μj) Fig. 3 Typical Transfer Characteristics Fig. 6 C oss and E oss vs. S873Rev. A, 2Feb8 3 Document Number: 9269 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiHA3N6AEL V GS, GatetoSource Voltage (V) 2 9 6 3 = 48 V = 3 V = 2 V I D, Drain Current (A) 3 25 2 5 5 5 3 45 6 75 25 5 75 25 5 Q g, Total Gate Charge (nc) T C, Case Temperature ( C) Fig. 7 Typical Gate Charge vs. GatetoSource Voltage Fig. Maximum Drain Current vs. Case Temperature 775 I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V..2.4.6.8..2, DraintoSource Breakdown Voltage (V) 75 725 7 675 65 625 I D = 25 μa 6 6 4 2 2 4 6 8 2 4 6 V SD, SourceDrain Voltage (V) T J, Junction Temperature ( C) Fig. 8 Typical SourceDrain Diode Forward Voltage Fig. Temperature vs. DraintoSource Voltage Operation in this area limited by R DS(on) I DM limited I D, Drain Current (A).. T C = 25 C T J = 5 C single pulse Limited by R DS(on) * BVDSS limited, DraintoSource Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Fig. 9 Maximum Safe Operating Area μs ms ms S873Rev. A, 2Feb8 4 Document Number: 9269 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiHA3N6AEL Duty cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single pulse..... Pulse Time (s) Fig. 2 Normalized Thermal Transient Impedance, JunctiontoCase R D R g V GS D.U.T. t p V DD V DD V Pulse width μs Duty factor. % I AS Fig. 3 Switching Time Test Circuit Fig. 6 Unclamped Inductive Waveforms 9 % V Q g Q gs Q gd % V GS t d(on) t r t d(off) t f V G Charge Fig. 4 Switching Time Waveforms Fig. 7 Basic Gate Charge Waveform Vary t p to obtain required I AS L Current regulator Same type as D.U.T. 5 kω R g V t p I AS D.U.T.. Ω V DD 2 V V GS.2 μf.3 μf D.U.T. V DS 3 ma Fig. 5 Unclamped Inductive Test Circuit Fig. 8 Gate Charge Test Circuit I G I D Current sampling resistors S873Rev. A, 2Feb8 5 Document Number: 9269 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiHA3N6AEL Peak Diode Recovery dv/dt Test Circuit D.U.T. 3 Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer 2 4 R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period V GS = V a 2 Reverse recovery current 3 D.U.T. I SD waveform Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage 4 Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 9 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?9269. S873Rev. A, 2Feb8 6 Document Number: 9269 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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