FMA50PZ Single P-Channel PowerTrench MOSFET 20V, 7.8A, 30m Features Max r S(on) = 30m at V GS = 4.5V, I = 7.8A Max r S(on) = 37m at V GS = 2.5V, I = 6.6A Max r S(on) = 50m at V GS =.8V, I = 5.5A Max r S(on) = 90m at V GS =.5V, I = 2.0A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ES protection level > 3KV typical (Note 3) Free from halogenated compounds and antimony oxides RoHS Compliant Pin G General escription This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Bottom rain Contact June 204 FMA50PZ Single P-Channel PowerTrench MOSFET rain Source 6 2 5 G 3 4 S S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage 20 V V GS Gate to Source Voltage ±8 V rain Current -Continuous (Note a) 7.8 I -Pulsed 24 Power issipation (Note a) 2.4 P Power issipation (Note b) 0.9 T J, T STG Operating and Storage Junction Temperature Range 55 to +50 C Thermal Characteristics A W R JA Thermal Resistance, Junction to Ambient (Note a) 52 R JA Thermal Resistance, Junction to Ambient (Note b) 45 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity 50 FMA50PZ MicroFET 2X2 7 8mm 3000units FMA50PZ Rev.B3
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = 250 A, V GS = 0V 20 V BV SS Breakdown Voltage Temperature I T J Coefficient = 250 A, referenced to 25 C 3 mv/ C I SS Zero Gate Voltage rain Current V S = 6V, V GS = 0V A I GSS Gate to Source Leakage Current V GS = ±8V, V S = 0V ±0 A On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V S, I = 250 A 0.4 0.7.5 V V GS(th) T J r S(on) Gate to Source Threshold Voltage Temperature Coefficient Static rain to Source On Resistance I = 250 A, referenced to 25 C 3 mv/ C V GS = 4.5V, I = 7.8A 27 30 V GS = 2.5V, I = 6.6A 34 37 V GS =.8V, I = 5.5A 46 50 V GS =.5V, I = 2.0A 60 90 V GS = 4.5V, I = 7.8A,T J = 25 C 36 40 g FS Forward Transconductance V = 5V, I = 7.8A 26 S ynamic Characteristics C iss Input Capacitance 0 480 pf V S = 0V, V GS = 0V, C oss Output Capacitance 205 275 pf f = MHz C rss Reverse Transfer Capacitance 85 280 pf Switching Characteristics t d(on) Turn-On elay Time 7 4 ns V = 0V, I = 7.8A t r Rise Time 9 8 ns V GS = 4.5V, R GEN = 6 t d(off) Turn-Off elay Time 25 200 ns t f Fall Time 64 03 ns Q g Total Gate Charge 9 27 nc V = 5V, I = 7.8A Q gs Gate to Source Charge 2. nc V GS = 4.5V Q gd Gate to rain Miller Charge 4.2 nc m FMA50PZ Single P-Channel PowerTrench MOSFET rain-source iode Characteristics I S Maximum Continuous rain-source iode Forward Current 2 A V S Source to rain iode Forward Voltage V GS = 0V, I S = 2A 0.8.2 V t rr Reverse Recovery Time 66 06 ns I F = 7.8A, di/dt = 00A/ s Q rr Reverse Recovery Charge 44 7 nc Notes:. R JA is determined with the device mounted on a in 2 pad 2 oz copper pad on a.5 x.5 in. board of FR-4 material. R JC is guaranteed by design while R CA is determined by the user's board design. a. 52 C/W when mounted on a in 2 pad of 2 oz copper. b. 45 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, uty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ES. No gate overvoltage rating is implied. FMA50PZ Rev.B3 2
Typical Characteristics T J = 25 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 24 20 6 2 8 4 V GS = -4.5V 0 0 2 3 4.6.4.2.0 0.8 Figure. I = -7.8A V GS = -4.5V V GS = -2.5V V GS = -2V V GS = -.8V V GS = -.5V PULSE URATION = 80 s UTY CYCLE = 0.5%MAX -V S, RAIN TO SOURCE VOLTAGE (V) NORMALIZE RAIN TO SOURCE ON-RESISTANCE.0 V PULSE URATION = 80 s GS =-4.5V UTY CYCLE = 0.5%MAX 0.5 0 4 8 2 6 20 24 On-Region Characteristics Figure 2. Normalized On-Resistance vs rain Current and Gate Voltage 0.6-75 -50-25 0 25 50 75 00 25 50 T J, JUNCTION TEMPERATURE ( o C) rs(on), RAIN TO SOURCE ON-RESISTANCE (m ) 2.5 2.0.5 200 50 00 50 V GS =-.5V V GS = -2.5V -I, RAIN CURRENT(A) V GS = -.8V V GS = -2V PULSE URATION = 80 s UTY CYCLE = 0.5%MAX I = -7.8A 0.0.5 2.0 2.5 3.0 3.5 4.0 4.5 -V GS, GATE TO SOURCE VOLTAGE (V) FMA50PZ Single P-Channel PowerTrench MOSFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage -I, RAIN CURRENT (A) 24 20 6 2 8 4 PULSE URATION = 80 s UTY CYCLE = 0.5%MAX V = -5V T J = -55 o C T J = 50 o C 0 0.0 0.5.0.5 2.0 2.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -IS, REVERSE RAIN CURRENT (A) 0 0. 0.0 V GS = 0V T J = 50 o C T J = -55 o C E-3 0.0 0.2 0.4 0.6 0.8.0.2 -V S, BOY IOE FORWAR VOLTAGE (V) Figure 6. Source to rain iode Forward Voltage vs Source Current FMA50PZ Rev.B3 3
Typical Characteristics T J = 25 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -Ig, GATE LEAKAGE CURRENT(A) 4.5 3.0.5 I = -7.8A 0.0 0 5 0 5 20 Figure 7. 0-0 -2 VS = 0V 0-3 0-4 0-5 0-6 0-7 0-8 0-9 Figure 9. V = -3V V = -7V Q g, GATE CHARGE(nC) V = -5V 00 0. 0 -V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage 0-0 0 3 6 9 2 5 -V GS, GATE TO SOURCE VOLTAGE (V) Gate Leakage Current vs Gate to Source Voltage CAPACITANCE (pf) -I, RAIN CURRENT (A) 3000 000 30 0 0. f = MHz V GS = 0V THIS AREA IS LIMITE BY r S(on) SINGLE PULSE T J = MAX RATE R JA = 45 o C/W T A = 25 o C 0.0 0. 0 C iss C oss C rss -V S, RAIN to SOURCE VOLTAGE (V) Figure 0. Forward Bias Safe Operating Area 00us ms 0ms 00ms s 0s C 20 60 FMA50PZ Single P-Channel PowerTrench MOSFET P (PK), PEAK TRANSIENT POWER (W) 400 00 0 SINGLE PULSE R JA = 45 o C/W T A = 25 o C V GS = -4.5V 0.5 0-4 0-3 0-2 0-0 0 0 0 2 0 3 t, PULSE WITH (s) Figure. Single Pulse Maximum Power issipation FMA50PZ Rev.B3 4
Typical Characteristics T J = 25 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z JA 2 0. 0.0 UTY CYCLE-ESCENING ORER = 0.5 0.2 0. 0.05 0.02 0.0 SINGLE PULSE R JA = 45 o C/W E-3 0-4 0-3 0-2 0-0 0 0 0 2 0 3 t, RECTANGULAR PULSE URATION (s) Figure 2. Transient Thermal Response Curve P M t t 2 NOTES: UTY FACTOR: = t /t 2 PEAK T J = P M x Z JA x R JA + T A FMA50PZ Single P-Channel PowerTrench MOSFET FMA50PZ Rev.B3 5
imensional Outline and Pad Layout FMA50PZ Single P-Channel PowerTrench MOSFET Package drawings are provided as a service to customers considering Fairchild components. rawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: http:///package/packageetails.html?id=pn_mleb-c06 FMA50PZ Rev.B3 6
m TRAEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 Millerrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR tm PowerTrench PowerXS Programmable Active roop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault etect TRUECURRENT * μseres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS 仙童 FMA50PZ Single P-Channel PowerTrench MOSFET *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS O NOT EXPAN THE TERMS OF FAIRCHIL S WORLWIE TERMS AN CONITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PROUCTS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT STATUS EFINITIONS efinition of Terms atasheet Identification Product Status efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production atasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 7 FMA50PZ Rev.B3