Dual N & P-Channel PowerTrench MOSFET April 2 tm General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features : N-Channel 7.A, 3V : P-Channel R DS(on) =.2Ω @ V GS = V R DS(on) =.4Ω @ V GS = 4.5V -5A, -3V R DS(on) =.52Ω @ V GS = -V Fast switching speed R DS(on) =.Ω @ V GS = -4.5V High power and handling capability in a widely used surface mount package SO- D DD2 D2 DD D Pin SO- G2 G S S GS2 S S 5 7 4 3 2 Absolute Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Units V DSS Drain-Source Voltage 3 3 V V GSS Gate-Source Voltage ±2 ±2 V I D Drain Current - Continuous (Note a) 7-5 - Pulsed 2-2 A P D Power Dissipation for Dual Operation 2 2 Power Dissipation for Single Operation (Note a).. (Note c).9.9 E AS Single Pulse Avalanche Energy (Note 3) 54 3 mj T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 7 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 4 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3 2mm 25 units W 2 Fairchild Semiconductor Corporation Rev F3(W)
Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown V GS = V, I D = 25 µa 3 V Voltage V GS = V, I D = -25 µa -3 BVDSS T J Breakdown Voltage Temperature Coefficient I D = 25 µa, Referenced to 25 C I D = -25 µa, Referenced to 25 C 25-23 mv/ C I DSS Zero Gate Voltage Drain V DS = 24 V, V GS = V µa Current V DS = -24 V, V GS = V - I GSSF Gate-Body Leakage, Forward V GS = 2 V, V DS = V All na I GSSR Gate-Body Leakage, Reverse V GS = -2 V, V DS = V All - na On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa V DS = V GS, I D = -25 µa VGS(th) Gate Threshold Voltage I D = 25 µa, Referenced to 25 C T J Temperature Coefficient I D = -25 µa, Referenced to 25 C R DS(on) Static Drain-Source On-Resistance V GS = V, I D = 7 A V GS = V, I D = 7 A, T J = 25 C V GS = 4.5 V, I D = A V GS = - V, I D = -5 A V GS = - V, I D = -5 A, T J = 25 C V GS = -4.5 V, I D = -4 A I D(on) On-State Drain Current V GS = V, V DS = 5 V V GS = - V, V DS = -5 V g FS Forward Transconductance V DS = 5 V, I D = 7 A V DS = -5 V, I D =-5 A Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, f =. MHz C oss Output Capacitance C rss Reverse Transfer Capacitance V DS = -5 V, V GS = V, f =. MHz R G Gate Resistance V GS = 5 mv, f =. MHz -.9 -.7-4.5 4.5 9 27 24 42 57 5 2-2 25 575 52 45 32 5 7 2.. 3-3 2 42 4 52 7 V mv/ C mω A S pf pf pf Ω Rev F3 (W)
Electrical Characteristics (continued) T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) t d(on) Turn-On Delay Time V DD = 5 V, I D = A, t r Turn-On Rise Time V GS = V, R GEN = Ω t d(off) Turn-Off Delay Time V DD = -5 V, I D = - A, t f Turn-Off Fall Time V GS = -V, R GEN = Ω Q g Total Gate Charge V DS = 5 V, I D = 7 A, V GS = V Q gs Gate-Source Charge Q gd Gate-Drain Charge V DS = -5 V, I D = -5 A,V GS = - V Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current I SM Maximum Plused Drain-Source Diode Forward Current (Note 2) V SD Drain-Source Diode Forward V GS = V, I S =.3 A (Note 2) Voltage V GS = V, I S = -.3 A (Note 2) t rr Diode Reverse Recovery Time I F = 7 A, d if/d t = A/µs Q rr Diode Reverse Recovery Charge I F = -5 A, d if/d t = A/µs 7 5 3 23 4 3 9.4 9..7 2.2 2..7.75 -. 9 9 9 4 24 37 25 7 3.3 -.3 2-2.2 -.2 ns ns ns ns nc nc nc A A V ns nc Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 7 /W when mounted on a.5 in 2 pad of 2 oz copper b) 25 /W when mounted on a.2 in 2 pad of 2 oz copper c) 35 /W when mounted on a minimum pad. Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.% 3. Starting TJ = 25 C, L = 3mH, IAS = A, VDD = 3V, VGS = V (). Starting TJ = 25 C, L = 3mH, IAS = 3A, VDD = 3V, VGS = V (). Rev F3 (W)
Typical Characteristics: (N-Channel) 2 V GS =.V 4.V 3.5V 2.2 I D, DRAIN CURRENT (A) 2 4.V 4.5V 3.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE..4 V GS = 3.5V 4. 4.5V 5..V.V.5.5 2 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics.. 4 2 2 I D, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE..4.2. I D = 7A V GS =.V R DS(ON), ON-RESISTANCE (OHM)..7..5.4.3.2 T A = 25 o C T A = 25 o C I D = 3.5A. -5-25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( o C) Figure 3. On-Resistance Variation with Temperature.. 2 4 V GS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I D, DRAIN CURRENT (A) 2 2 4 V DS = 5V T A = 25 o C -55 o C 25 o C I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 25 o C 25 o C -55 o C.5 2 2.5 3 3.5 4 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics...2.4...2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev F3 (W)
Typical Characteristics: (N-Channel) V GS, GATE-SOURCE VOLTAGE (V) 4 2 I D = 7A V DS = V 5V 2V 2 4 2 Q g, GATE CHARGE (nc) CAPACITANCE (pf) 4 2 C rss C oss C iss f = MHz V GS = V 5 5 2 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics. I D, DRAIN CURRENT (A).. R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 35 o C/W T A = 25 o C DC ms ms ms s s µs. V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. I AS, AVALANCHE CURRENT (A) Tj=25.. t AV, TIME IN AVALANCHE (ms) Tj=25 Figure. Unclamped Inductive Switching Capability Figure P(pk), PEAK TRANSIENT POWER (W) 5 4 3 2... t, TIME (sec) SINGLE PULSE R θja = 35 C/W TA = 25 C Figure. Single Pulse Maximum Power Dissipation. Rev F3 (W)
Typical Characteristics: (P-Channel) -I D, DRAIN CURRENT (A) 3 2 V GS = -V -.V -5.V -4.5V -4.V -3.5V -3.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2...4.2 V GS =-4.V -4.5V -5.V -.V -7.V -.V -V 2 3 4 5 -V DS, DRAIN TO SOURCE VOLTAGE (V). 2 24 3 -I D, DRAIN CURRENT (A) Figure 2. On-Region Characteristics. Figure 3. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE..4.2. I D = -5A V GS = -V R DS(ON), ON-RESISTANCE (OHM).25.2.5..5 T A = 25 o C T A = 25 o C I D = -2.5A. -5-25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( o C) 2 4 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Temperature. Figure 5. On-Resistance Variation with Gate-to-Source Voltage. 5 -I D, DRAIN CURRENT (A) 2 9 3 V DS = -5V T A = -55 o C 25 o C 25 o C -I S, REVERSE DRAIN CURRENT (A)... V GS =V T A = 25 o C 25 o C -55 o C.5 2 2.5 3 3.5 4 4.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics...2.4...2.4 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev F3 (W)
Typical Characteristics: (P-Channel) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =.5.2..5.2. SINGLE PULSE..... t, TIME (sec) R θja(t) = r(t) * R θa R θja = 35 C/W P(pk) tt t 2 t2 TJ - TA = P * R θja(t) Duty Cycle, D = t / t2 Figure 23. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. Rev F3 (W)
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