2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features Forward Biased Second Breakdown Current Capability I S/b = 3.75 Adc @ V CE = 4 2N3771 = 2.5 Adc @ V CE = 6 2N3772 PbFree Packages are Available* Î MAXIMUM RATINGS (Note 1) Î Î Rating Symbol 2N3771 2N3772 Unit ÎÎ CollectorEmitter Voltage V CEO 4 Î 6 ÎÎ CollectorEmitter Voltage V CEX Î 8 ÎÎ CollectorBase Voltage V CB Î ÎÎ EmitterBase Voltage V EB Î ÎÎ Collector Current Continuous ÎÎ Peak Î I C ÎÎ 3Î ÎÎ Adc ÎÎ Base Current Continuous I B 7.5Î ÎÎ Adc Peak 15 15 Î Total Device Dissipation @ T ÎÎ C = 25 C P Derate above 25 C D 1.855 ÎÎ W W/ C ÎÎ Operating and Storage Junction T J, T stg 65 to + ÎÎ Temperature Range Î C Î THERMAL CHARACTERISTICS ÎÎ Characteristic Symbol Max ÎÎ Unit ÎÎ Thermal Resistance, JC 1.17 ÎÎ C/W JunctiontoCase Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data. and 3 AMPERE POWER TRANSISTORS NPN SILICON 4 and 6 VOLTS, 1 WATTS TO4AA (TO3) CASE 7 STYLE 1 2N377x G A YY WW MEX MARKING DIAGRAM 2N377xG AYYWW MEX = Device Code x = 1 or 2 = PbFree Package = Assembly Location = Year = Work Week = Country of Origin ORDERING INFORMATION Device Package Shipping 2N3771 TO4 Units / Tray 2N3771G TO4 Units / Tray (PbFree) 2N3772 TO4 Units / Tray 2N3772G TO4 (PbFree) Units / Tray Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 6 October, 6 Rev. 11 1 Publication Order Number: 2N3771/D
ÎÎ ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic ÎÎ Symbol MinÎ Max Unit ÎÎ OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2 and 3) 2N3771 ÎÎ V CEO(sus) 4 Î C = Adc, I B = ) 2N3772 6 ÎÎ CollectorEmitter Sustaining Voltage 2N3771 V C = Adc, V EB(off) = 1.5, R BE = ) 2N3772 ÎÎ CEX(sus) 8 Î CollectorEmitter Sustaining Voltage 2N3771 ÎÎ V CER(sus) ÎÎ C = Adc, R BE = ) 2N3772 Î 45 7 Î I CE = 3, I B ÎÎ CEO ÎÎ = ) 2N3771 CE =, I B = ) 2N3772 Î Î CE = 25, I B = ) ÎÎ I CE =, V EB(off) = 1.5 ) 2N3771 ÎÎ CEV Î CE =, V EB(off) = 1.5 ) 2N3772 CE = 45, V EB(off) = 1.5 ) 2N6257 4. CE = 3, V EB(off) = 1.5, T C = 1 C) 2N3771 Î Î 2N3772 CE = 45, V EB(off) = 1.5, T C = 1 C) ÎÎ I CBO ÎÎ CB =, I E = ) 2N3771 CB =, I E = ) 2N3772 Î Î Emitter Cutoff Current (Note 2) ÎÎ I EBO ÎÎ BE =, I C = ) 2N3771 Î Î BE =, I C = ) 2N3772 ÎÎ ON CHARACTERISTICS (Note 2) ÎÎ DC Current Gain (Note 3) h C = 15 Adc, V CE = 4. ) 2N3771 ÎÎ FE 15 Î 6 C = Adc, V CE = 4. ) 2N3772 C = 8. Adc, V CE = 4. ) Î 15 Î 6 C = 3 Adc, V CE = 4. ) 2N3771 C = Adc, V CE Î Î = 4. ) 2N3772 ÎÎ CollectorEmitter Saturation Voltage V C = 15 Adc, I B = 1.5 Adc) 2N3771 ÎÎ CE(sat) ÎÎ C = Adc, I B = Adc) 2N3772 Î Î 1.4 C = 3 Adc, I B = 6. Adc) 2N3771 4. C = Adc, I B = 4. Adc) 2N3772 Î Î 4. BaseEmitter On Voltage ÎÎ V BE(on) ÎÎ C = 15 Adc, V CE = 4. ) 2N3771 C = Adc, V CE = 4. ) 2N3772 Î Î 2.7 2.2 C = 8. Adc, V CE = 4. ) ÎÎ *DYNAMIC CHARACTERISTICS (Note 2) CurrentGain Bandwidth Product C = Adc, V CE = 4., f test ÎÎ f T Î MHz = khz) SmallSignal Current Gain h C = Adc, V CE = 4., f = khz) ÎÎ fe Î 4 Î ÎÎ SECOND BREAKDOWN Second Breakdown Energy with Base Forward Biased, t = s (nonrepetitive) ÎÎ I S/b ÎÎ Adc CE = 4 ) 2N3771 3.75 CE = 6 ) 2N3772 2. Indicates JEDEC registered data. 3. Pulse Test: 3 s, Rep. Rate 6 cps. 2.5 2
P D, POWER DISSIPATION (WATTS) 175 1 125 75 25 25 75 125 1 175 T C, CASE TEMPERATURE ( C) Figure 1. Power Derating r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.7.3.2 D = SINGLE PULSE.1.2 JC (t) = r(t) JC JC =.875 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2.1.2 t, TIME (ms) Figure 2. Thermal Response 2N3771, 2N3772 4 3 3. 2N3771 2N3772, (dc) T C = 25 C PULSE CURVES APPLY FOR ALL DEVICES dc 4 s s s BONDING WIRE LIMITED ms THERMALLY LIMITED (SINGLE PULSE) ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V CEO 2N3771 ms 2N3772 3. 3 7 V CE, COLLECTOREMITTER VOLTAGE OLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 3 is based on JEDEC registered Data. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) < C. T J(pk) may be calculated from the data of Figure 2. Using data of Figure 2 and the pulse power limits of Figure 3, T J(pk) will be found to be less than T J(max) for pulse widths of 1 ms and less. When using ON Semiconductor transistors, it is permissible to increase the pulse power limits until limited by T J(max). Figure 3. ActiveRegion Safe Operating Area 2N3771, 2N3772 3
+11 V 25 s 9. V t r, t f ns DUTY CYCLE = % 51 R B 4 V Figure 4. Switching Time Test Circuit D 1 V CC + 3 V R C D1 MUST BE FAST RECOVERY TYPE, e.g.: М1N5825 USED ABOVE I B ma МMSD6 USED BELOW I B ma SCOPE R B AND R C ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS t, TIME ( s) μ.2.1 V CC = 3 I C /I B = V BE(off) = V.7 3. 3 Figure 5. TurnOn Time t r t d t, TIME ( s) μ t s t f V CC = 3 V I C /I B = I B1 = I B2 C, CAPACITANCE (pf) 7 3 C ib C ob 3. 3 V R, REVERSE VOLTAGE OLTS) Figure 6. TurnOff Time Figure 7. Capacitance h FE, DC CURRENT GAIN 3 7 3 T J = 1 C V CE = 4. V 25 C 55 C.7 3. 3 Figure 8. DC Current Gain V CE, COLLECTOREMITTER VOLTAGE OLTS) 1.6 1.2.8.4.1 I C = A A A A.2 Figure 9. Collector Saturation Region 4
PACKAGE DIMENSIONS TO4 (TO3) CASE 7 ISSUE Z V H E 2 1 A N U C T SEATING PLANE D 2 PL K 3 (.5) M T Q M Y M L G Y Q 3 (.5) M T B Y M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO4AA OUTLINE SHALL APPLY. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 1.5 REF 39.37 REF B 26.67 C 35 6.35 8.51 D.38.43.97 9 E 5.7 1.4 1.77 G.43 BSC.92 BSC H 15 BSC 5.46 BSC K.44.48 11.18 12.19 L.665 BSC 16.89 BSC N.83 28 Q 51 65 3.84 4.19 U 1.187 BSC 35 BSC V 31 88 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 336752175 or 8344386 Toll Free USA/Canada Fax: 336752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 29 Japan Customer Focus Center Phone: 813577338 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N3771/D