BY6P-4 BY26PIV-4 / BY261PIV-4 FAS RECOVERY RECIFIER DIODES MAIN PRODUC CHARACERISICS K2 A2 A2 K1 I F(AV) V RRM V F (max) trr (max) 2 x 6 A 4 V 1.4 V s K1 A1 BY261PIV-4 K2 A1 BY26PIV-4 FEAURES AND BENEFIS VERY LOW REVERSE RECOVERY IME VERY LOW SWICHING LOSSES LOW NOISE URN-OFF SWICHING INSULAED PACKAGE: ISOOP Isulatio voltage: 2 V RMS Capacitace = 45 pf Iductace < 5 H DESCRIPION hese rectifier devices are suited for free-wheelig fuctio i coverters ad motor cotrol circuits. Packaged i ISOOP or SOD93, they are iteded for use i Switch Mode Power Supplies. ABSOLUE RAINGS (limitig values, per diode) ISOOP M (Plastic) K SOD93 (Plastic) A Symbol Parameter Value Uit V RRM Repetitive peak reverse voltage 4 V I FRM Repetitive peak forward curret tp=5 µs F=1kHz 1 A I F(RMS) RMS forward curret ISOOP 14 A SOD93 1 I F(AV) Average forward curret δ =.5 c = 7 C ISOOP 6 A c = 8 C SOD93 I FSM Surge o repetitive forward curret ISOOP 6 A tp = 1 ms Siusoidal SOD93 5 stg Storage temperature rage - 4 to + 1 C j Maximum operatig juctio temperature 1 C M: ISOOP is a registered trademark of SMicroelectroics. May 2 - Ed: 4D 1/7
BY6P-4 / BY26PIV-4 / BY261PIV-4 HERMAL RESISANCES Symbol Parameter Value Uit R th(j-c) Juctio to case ISOOP Per diode.8 C/W otal.45 SOD93 otal.7 R th(c) Couplig.1 C/W Whe the diodes 1 ad 2 are used simultaeously : j(diode 1) = P(diode) x R th(j-c) (Per diode) + P(diode 2) x R th(c) SAIC ELECRICAL CHARACERISICS (per diode) Symbol Parameter est Coditios Mi. yp. Max. Uit V F * Forward voltage drop j = 25 C I F = 6A 1.5 V j = 1 C 1.4 I R ** Reverse leakage curret j = 25 C V R =V RRM 6 µa j = 1 C 6 ma Pulse test : * tp = 38 µs, δ <2% ** tp = 5 ms, δ <2% o evaluate the coductio losses use the followig equatio: 2 P = 1.1 x I F(AV) +.45 I F (RMS) RECOVERY CHARACERISICS (per diode) Symbol est Coditios Mi. yp. Max. Uit t rr j = 25 C I F =1A V R = 3V di F /dt = - 15A/µs 1 s I F =.5A I R =1A I rr =.25A URN-OFF SWICHING CHARACERISICS Symbol Parameter est Coditios Mi. yp. Max. Uit t IRM Maximum reverse di F /dt = - 24 A/µs V CC = 2 V 75 s recovery time di F /dt = - 48 A/µs I F =6A I L p.5 µh RM Maximum reverse di F /dt = - 24 A/µs 18 A j = 1 C recovery curret di F /dt = - 48 A/µs (see fig. 13) 24 C= V ur-off overvoltage j = 1 C V CC = 12V I F =I F(AV) 3.3 4 / coefficiet di VRP F /dt = - 6A/µs L p =.8µH CC (see fig. 14) 2/7
BY6P-4 / BY26PIV-4 / BY261PIV-4 Fig. 1: Average forward power dissipatio versus average forward curret (per diode, for ISOOP). Fig. 2: Peak curret versus form factor (per diode, for ISOOP). PF(av)(W) 11 1 δ =.2 δ=.5 9 δ =.1 8 δ =1 7 δ =.5 6 4 3 2 1 IF(av) (A) δ=tp/ tp 1 2 3 4 6 7 8 3 3 2 2 1 1 IM(A) P=75W δ=tp/ tp P=1W P=W P=25W δ..1.2.3.4.5.6.7.8.9 1. Fig. 3: Average forward curret versus ambiet temperature (δ=.5, per diode for ISOOP). 7 6 4 3 2 IF(av)(A) Rth(j-a)=Rth(j-c) SOD93 ISOOP Rth(j-a)=2.5 C/W 1 δ=tp/ tp amb( C) 25 75 1 125 1 Fig. 4-1: No repetitive surge peak forward curret versus overload duratio (SOD93). Fig. 4-2: No repetitive surge peak forward curret versus overload duratio (per diode, for ISOOP). 4 4 3 3 2 2 1 1 IM(A) c= C c=25 C c=75 C IM t δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ IM(A) 4 3 3 c= C 2 c=25 C 2 1 c=75 C 1 IM t δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ 3/7
BY6P-4 / BY26PIV-4 / BY261PIV-4 Fig. 5-1: Relative variatio of thermal impedace juctio to case versus pulse duratio (per diode for ISOOP). Fig. 5-2: Relative variatio of thermal impedace juctio to case versus pulse duratio (SOD93). 1. K=[Zth(j-c)/Rth(j-c)] 1. K=[Zth(j-c)/Rth(j-c)].5 δ =.5.5 δ =.5.2 δ =.2 δ =.1 Sigle pulse tp(s) δ=tp/ tp.1 1E-3 1E-2 1E-1 1E+.2 δ =.2 δ =.1 Sigle pulse tp(s) δ=tp/ tp.1 1E-3 1E-2 1E-1 1E+ Fig. 6: Forward voltage drop versus forward curret (maximum values, per diode for ISOOP). Fig. 7: Juctio capacitace versus reverse voltage applied (typical values, per diode for ISOOP). 1 1 IFM(A) ypical values j=1 C j=25 C j=1 C VFM(V) 1..5 1. 1.5 2. 2.5 3. 2 18 16 14 12 1 C(pF) F=1MHz j=25 C 8 VR(V) 6 1 1 1 2 Fig. 8: Recovery charges versus di F /dt (per diode for ISOOP). Fig. 9: Recovery curret versus di F /dt (per diode for ISOOP). Qrr(µC) 1.6 9% cofidece 1.4 j=1 C 1.2 1..8.6.4.2. 1 2 1 2 1 IRM(A) 9% cofidece j=1 C 1 1 2 1 2 4/7
BY6P-4 / BY26PIV-4 / BY261PIV-4 Fig. 1: rasiet peak forward voltage versus di F /dt (per diode for ISOOP). Fig. 11: Forward recovery time versus di F /dt (per diode for ISOOP). 3 25 2 15 1 VFP(V) 9% cofidece j=1 C tfr(µs) 1. 1.25 1..75. 9% cofidece j=1 C 5 1 2 3 4.25. 1 2 3 4 Fig. 12: Dyamic parameters versus juctio temperature. Qrr;IRM[j] / Qrr;IRM[j=1 C] 1. 1.25 1..75 IRM. Qrr j( C).25 25 75 1 125 1 Fig. 13: ur-off switchig characteristics (without serie iductace). Fig. 14: ur-off switchig characteristics (with serie iductace). IF IF LC DU VF dif/dt LC DU LP VF dif/dt IRM VRP tirm 5/7
BY6P-4 / BY26PIV-4 / BY261PIV-4 PACKAGE MECHANICAL DAA ISOOP DIMENSIONS REF. Millimeters Iches Mi. Max. Mi. Max. A 11.8 12.2.465.48 A1 8.9 9.1.3.358 B 7.8 8.2.37.323 C.75.85.3.33 C2 1.95 2.5.77.81 D 37.8 38.2 1.488 1.4 D1 31. 31.7 1.24 1.248 E 25.15 25..99 1.4 E1 23.85 24.15.939.951 E2 24.8 typ..976 typ. G 14.9 15.1.587.594 G1 12.6 12.8.496.4 G2 3. 4.3.138.169 F 4.1 4.3.161.169 F1 4.6 5..181.197 P 4. 4.3.157.69 6/7
BY6P-4 / BY26PIV-4 / BY261PIV-4 PACKAGE MECHANICAL DAA SOD93 Plastic DIMENSIONS REF. Millimeters Iches Mi. yp. Max. Mi. yp. Max. A 4.7 4.9.185.193 C 1.17 1.37.46.54 D 2..98 D1 1.27. E..78.2.31 F 1.1 1.3.43.51 F3 1.75.69 G 1.8 11.1.425.437 H 14.7 15.2.578.598 L 12.2.48 L2 16.2.638 L3 18..79 L5 3.95 4.15.156.163 L6 31. 1.22 O 4. 4.1.157.161 Orderig type Markig Package Weight Base qty Delivery mode BY6P-4 BY6P-4 SOD93 3.79 g. 3 ube BY26PIV-4 BY26PIV-4 ISOOP 28 g. (without screws) 1 ube BY261PIV-4 BY261PIV-4 ISOOP 28 g. (without screws) 1 ube Coolig method: by coductio (C) Recommeded torque value (ISOOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommeded for moutig the package o the heatsik ad the 4 screws give with the screw versio).he screws supplied with the package are adapted for moutig o a board (or other types of termials) with a thickess of.6 mm mi ad 2.2 mm max. Recommeded torque value (SOD93):.8 N.m. Maximum torque value (SOD93): 1. N.m. Epoxy meets UL94,V Iformatio furished is believed to be accurate ad reliable. However, SMicroelectroics assumes o resposibility for the cosequeces of use of such iformatio or foray ifrigemet of patets or other rights of third parties which may result from its use. No licese is grated by implicatio or otherwise uder ay patet or patet rights of SMicroelectroics. Specificatios metioed i this publicatio are subject to chage without otice. his publicatio supersedes ad replaces all iformatio previously supplied. SMicroelectroics products are ot authorized for use as critical compoets i life support devices or systems without express writte approval of SMicroelectroics. he S logo is a registered trademark of SMicroelectroics 2 SMicroelectroics - Prited i Italy - All rights reserved. SMicroelectroics GROUP OF COMPANIES Australia - Brazil - Chia - Filad - Frace - Germay - Hog Kog - Idia - Italy - Japa - Malaysia Malta - Morocco - Sigapore - Spai - Swede - Switzerlad - Uited Kigdom - U.S.A. http://www.st.com 7/7