Hyperfast Rectifier, 3 FRED Pt TO-247 modified 2 3 Base common cathode 2 3 athode node FETURES Hyperfast recovery time Low forward voltage drop 75 operating junction temperature Low leakage current Single diode device Designed and qualified according to JEDE -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 vailable PRODUT SUMMRY Package TO-247 modified (2 pins) I F(V) 3 V R 6 V V F at I F.34 V t rr typ. See Recovery table T J max. 75 Diode variation Single die DESRIPTION / PPLITIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PF boost stage in the /D section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Peak repetitive reverse voltage V RRM 6 V verage rectified forward current I F(V) T = 6 3 Non-repetitive peak surge current I FSM 3 Operating junction and storage temperatures T J, T Stg -65 to +75 ELETRIL SPEIFITIONS ( unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μ 6 - - I F = 3-2. 2.6 Forward voltage V F I F = 3, T J = 5 -.34.75 V R = V R rated -.3 5 Reverse leakage current I R T J = 5, V R = V R rated - 6 5 μ Junction capacitance T V R = 6 V - 33 - pf Series inductance L S Measured lead to lead 5 mm from package body - 3.5 - nh V Revision: 9-Jul-5 Document Number: 948 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
DYNMI REOVERY HRTERISTIS ( unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Reverse recovery time t rr - 3 - ns I F =., di F /dt = 5 /μs, V R = 3 V - 28 35 T J = 25-77 - Peak recovery current I RRM T I F = 3 J = 25-3.5 - di F /dt = 2 /μs T J = 25 V R = 2 V - 7.7 - - 65 - Reverse recovery charge Q rr T J = 25-345 - n THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg -65-75 Thermal resistance, junction to case per leg R thj -.5.9 Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque R thj Typical socket mount - - 7 R ths Mounting surface, flat, smooth and greased -.4 - /W - 6. - g -.22 - oz. Marking device ase style TO-247 modified 3EPH6 6. (5.) - 2 () kgf cm (lbf in) Revision: 9-Jul-5 2 Document Number: 948 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
I F - Instantaneous Forward urrent () T J = 75 T J = 5 I R - Reverse urrent (µ)... T J = 75 T J = 5 T J = 25 T J =.5.5 2 2.5 3 3.5 V F - Forward Voltage Drop (V) Fig. - Typical Forward Voltage Drop haracteristics. 2 3 4 V R - Reverse Voltage (V) 5 6 Fig. 2 - Typical Values of Reverse urrent vs. Reverse Voltage T - Junction apacitance (pf) 2 3 4 5 6 V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Impedance ( /W).. Single pulse (thermal resistance) D =.5 D =.2 D =. D =.5 D =.2 D =. 2. Peak T J = P DM x Z thj + T...... t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thj haracteristics P DM Notes:. Duty factor D = t /t 2 t t 2.. Revision: 9-Jul-5 3 Document Number: 948 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
llowable ase Temperature ( ) 8 6 4 2 Square wave (D =.5) Rated V R applied See note () D 8 5 5 2 25 3 35 4 45 t rr (ns) 9 8 7 6 5 4 3 I F = 3 I F = 5 2 V R = 2 V T J = 25 I F(V) - verage Forward urrent () di F /dt (/µs) Fig. 5 - Maximum llowable ase Temperature vs. verage Forward urrent Fig. 7 - Typical Reverse Recovery Time vs. di F /dt verage Power Loss (W) 9 8 7 6 5 4 3 2 D RMS limit D =. D =.2 D =.5 D =. D =.2 D =.5 Q rr (n) 2 8 6 4 2 V R = 2 V T J = 25 I F = 3 I F = 5 5 5 2 25 3 35 4 45 I F(V) - verage Forward urrent () di F /dt (/µs) Fig. 6 - Forward Power Loss haracteristics Fig. 8 - Typical Stored harge vs. di F /dt Note () Formula used: T = T J - (Pd + Pd REV ) x R thj ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = Rated V R V R = 2 V L = 7 μh. Ω di F /dt adjust G D IRFP25 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test ircuit Revision: 9-Jul-5 4 Document Number: 948 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
(3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions ORDERING INFORMTION TBLE Device code VS- 3 E P H 6 PbF 2 3 4 5 6 7 - product 2 - urrent rating (3 = 3 ) 3 - ircuit configuration: E = single diode 4 - Package: P = TO-247 modified 5 - H = hyperfast recovery 6 - Voltage rating (6 = 6 V) 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION VS-3EPH6PbF 25 5 ntistatic plastic tube VS-3EPH6-N3 25 5 ntistatic plastic tube Dimensions Part marking information LINKS TO RELTED DOUMENTS TO-247 modified PbF TO-247 modified -N3 www.vishay.com/doc?9554 www.vishay.com/doc?95255 www.vishay.com/doc?95442 Revision: 9-Jul-5 5 Document Number: 948 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
DIMENSIONS in millimeters and inches TO-247 modified - 5 mils L/F Outline Dimensions B (2) R/2 Q (3) E S 2 (6) Ø P (Datum B) Ø K M D B M Ø P D2 2 x R (2) D D (4) 2 3 D Thermal pad 4 (5) L L See view B (4) E 2 x b2 3 x b. M M b4 2 x e View - Plating (b, b3, b5) Base metal DDE E (c) c (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.3.83.29 D2.5.35.2.53 2.2 2.59.87.2 E 5.29 5.87.62.625 3 2.7.37.46.54 E 3.46 -.53 - b.99.4.39.55 e 5.46 BS.25 BS b.99.35.39.53 Ø K.254. b2.65 2.39.65.94 L 4.2 6..559.634 b3.65 2.34.65.92 L 3.7 4.29.46.69 b4 2.59 3.43.2.35 Ø P 3.56 3.66.4.44 b5 2.59 3.38.2.33 Ø P - 7.39 -.29 c.38.89.5.35 Q 5.3 5.69.29.224 c.38.84.5.33 R 4.52 5.49.78.26 D 9.7 2.7.776.85 3 S 5.5 BS.27 BS D 3.8 -.55-4 Notes () Dimensioning and tolerance per SME Y4.5M-994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.54") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c and Q Revision: 2-pr-7 Document Number: 9554 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
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