NTP75NL9, NTB75NL9 Power MOSFET 75 Amps, Volts NChannel TO and D PAK This Logic Level Vertical Power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The draintosource diode has a ideal fast but soft recovery. Features UltraLow R DS(on), Single Base, Advanced Technology SPICE Parameters Available Diode is Characterized for Use in Bridge Circuits I DSS and V DS(on) Specified at Elevated Temperatures High Avalanche Energy Specified ESD JEDAC Rated HBM Class, MM Class B, CDM Class PbFree Packages are Available Typical Applications Power Supplies Inductive Loads PWM Motor Controls Replaces MTP75NHDL and MTB75NHDL in Many Applications 75 AMPERES, VOLTS R DS(on) = 8 m G NChannel D TO CASE A STYLE 5 S MARKING DIAGRAMS & PIN ASSIGNMENTS Drain 75N L9G AYWW Gate Source Drain Drain D PAK CASE 8AA STYLE Gate 75N L9G AYWW Drain Source 75NL9 A Y WW G = Device Code = Assembly Location = Year = Work Week = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 5 August, 5 Rev. 7 Publication Order Number: NTP75NL9/D
NTP75NL9, NTB75NL9 MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS Vdc DraintoGate Voltage (RGS = M ) V DGB Vdc GatetoSource Voltage Continuous V GS ± Vdc Nonrepetitive (tp ms) V GS ± Vdc Drain Current Continuous @ T C = 5 C Continuous @ T C = C Single Pulse (tp s) I D I D I DM 75 59 5 Adc Apk Total Power Dissipation @ T C = 5 C Derate above 5 C Total Power Dissipation @ T A = 5 C (Note ) P D 5..5 W W/ C W Operating and Storage Temperature Range T J and T stg 55 to 5 C Single Pulse DraintoSource Avalanche Energy Starting (V DD = 8 Vdc, V GS = Vdc, L = mh, I L (pk) = 55 A, V DS = Vdc) E AS 5 mj Thermal Resistance JunctiontoCase JunctiontoAmbient JunctiontoAmbient (Note ) R JC R JA R JA. 6.5 5 C/W Maximum Lead Temperature for Soldering Purposes, /8 from case for seconds T L 6 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. When surface mounted to an FR board using the minimum recommended pad size. ORDERING INFORMATION Device Package Shipping NTP75NL9 TO 5 Units/Rail NTP75NL9G TO (PbFree) 5 Units/Rail NTB75NL9 D PAK 5 Units/Rail NTB75NL9G D PAK (PbFree) 5 Units/Rail NTB75NL9T D PAK 8 Tape & Reel NTB75NL9TG D PAK (PbFree) 8 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.
NTP75NL9, NTB75NL9 ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (Note ) (V GS = Vdc, I D = 5 Adc) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (V DS = Vdc, V GS = Vdc) (V DS = Vdc, V GS = Vdc, T J = 5 C) (BR)DSS 57 GateBody Leakage Current (V GS = ± Vdc, V DS = Vdc) I GSS ± nadc ON CHARACTERISTICS (Note ) Gate Threshold Voltage (Note ) (V DS = V GS, I D = 5 Adc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note ) (V GS = 5. Vdc, I D = 7.5 Adc) I DSS V GS(th)..6 6.. R DS(on) 6.5 8. Vdc mv C Adc Vdc mv C m Static DraintoSource On Resistance (Note ) (V GS = Vdc, I D = 75 Adc) (V GS = Vdc, I D = 7.5 Adc, T J = 5 C) V DS(on).5.5.68.5 Vdc Forward Transconductance (Notes & ) (V DS = Vdc, I D = Adc) g FS 58 m DYNAMIC CHARACTERISTICS (Note ) Input Capacitance C iss 98 565 pf Output Capacitance (V DS = 5 Vdc, V GS =, f =. MHz) C oss 6 89 Transfer Capacitance C rss 7 SWITCHING CHARACTERISTICS (Notes & ) TurnOn Delay Time t d(on) 6 ns Rise Time (V GS = 5. Vdc, V DD = Vdc, I D = 75 Adc, t r TurnOff Delay Time R G =.7 ) (Note ) t d(off) 65 Fall Time t f 5 75 Gate Charge (V GS = 5. Vdc, I D = 75 Adc, V DS = Vdc) (Note ) SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I S = 75 Adc, V GS = Vdc) (I S = 75 Adc, V GS = Vdc, T J = 5 C) (Note ) Q T 57 75 nc Q 5 Q 5 V SD.9.9.5 Vdc Reverse Recovery Time (Note ) Reverse Recovery Stored Charge (Note ) (I S = 75 Adc, V GS = Vdc dl S /dt = A/ s) (Note ). Pulse Test: Pulse Width S, Duty Cycle %.. Switching characteristics are independent of operating junction temperatures.. From characterization test data. t rr 7 ns t a t b 7 C Q RR.
NTP75NL9, NTB75NL9 I D, DRAIN CURRENT (AMPS) 9 6 V GS = V V GS =.5 V V GS = 5 V V GS = 6 V V GS = 8 V V GS = V V GS =.5 V V GS = V V GS =.5 V...6.8...6.8...6 V DS, DRAINTOSOURCE VOLTAGE (VOLTS) I D, DRAIN CURRENT (AMPS) 5 5 5 9 75 6 5 5 V DS V T J = C T J = 55 C.5.5.5.5 V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTO SOURCE RESISTANCE ( ).85.8.75.7.65.6.55.5.5. V GS = 5 V T J = C T J = 55 C 5 6 7 8 9 R DS(on), DRAINTO SOURCE RESISTANCE ( ).9.8.7 V GS = 5 V.6 V GS = V.5. 6 8 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) R DS(on), DRAINTO SOURCE RESISTANCE (NORMALIZED).6...8 Figure. OnResistance vs. Drain Current and Temperature V GS = 5. V I D = 7.5 A.6 5 5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( C) Figure 5. OnResistance Variation Temperature I DSS, LEAKAGE (na) Figure. OnResistance vs. Drain Current and Gate Voltage V GS = V T J = 5 C T J = C 5 5 5 V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure 6. DraintoSource Leakage Current vs. Voltage
NTP75NL9, NTB75NL9 C, CAPACITANCE (pf) 8 6 8 6 V GS V DS C iss C oss C rss V DS = V V GS = V 6 8 685 GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation V GS, GATETOSOURCE VOLTAGE (V) 8 6 Q V DS Q Q T V GS I D = 75 A Q 5 6 Q g, TOTAL GATE CHARGE (nc) Figure 8. GatetoSource and DraintoSource Voltage vs. Total Charge t, TIME (ns) t r t f t d(off) t d(on) I D = 75 A V DD = 5 V V GS = 5 V..7 6. 9. I S, SOURCE CURRENT (AMPS) 75 7 V GS = V 65 6 55 5 5 5 5 5 5....6.8. R G, GATE RESISTANCE ( ) V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure. Diode Forward Voltage vs. Current E AS, SINGLE PULSE DRAINTOSOURCE AVALANCHE ENERGY (mj) 6 I D = 75 A 8 6 5 5 75 5 5 T J, STARTING JUNCTION TEMPERATURE ( C) Figure. Maximum Avalanche Energy vs. Starting Junction Temperature 5
NTP75NL9, NTB75NL9 PACKAGE DIMENSIONS TO CASE A9 ISSUE AA H Q Z L V G B N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.6.8 5.75 B.8.5 9.66.8 C.6.9.7.8 D.5.5.6.88 F..7.6.7 G.95.5..66 H..55.8.9 J.8.5.6.6 K.5.56.7.7 L.5.6.5.5 N.9..8 5. Q...5. R.8...79 S.5.55.5.9 T.5.55 5.97 6.7 U..5..7 V.5.5 Z.8. STYLE 5: PIN. GATE. DRAIN. SOURCE. DRAIN 6
NTP75NL9, NTB75NL9 PACKAGE DIMENSIONS D PAK CASE 8AA ISSUE O T SEATING PLANE B G S K C E V W A W J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A..8 8.6 9.65 B.8.5 9.65.9 C.6.9.6.8 D..6.5.9 E.5.55.. F. 7.87 G. BSC.5 BSC J.8.5.6.6 K.9..9.79 M.8 7. S.575.65.6 5.88 V.5.55.. D PL. (.5) M T B M STYLE : PIN. GATE. DRAIN. SOURCE. DRAIN SOLDERING FOOTPRINT* 8.8..66..6. 5.8. 7..67.5. SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
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