Sensors and actuators at NXP: bringing more than Moore to CMOS Joost van Beek Senior Principal Scientist Corporate R&D, NXP Semiconductors Presented at the International Symposium on Advanced Hybrid Nano Devices 4-5 October, 2011, Tokyo Institute of Technology
NXP Semiconductors NXP Semiconductors N.V. (NASDAQ: NXPI) provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise. Our innovations are used in a wide range of automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. 2
More Moore: Miniaturization Baseline CMOS: MPU, Memory, Logic High Performance Mixed Signal Solutions More Than Moore Required Application Optimized Mix of Analog and Digital More Than Moore: Enrichment c75 c35 c18 c13 90nm 65nm 45nm Passives High Voltage Power Information Processing, Storage & Security Analog (amp, IF, DC) RF Sensors Actuators Sense, Interact, Empower High-Performance Components High-Performance Mixed-Signal Solutions Power Efficiency, Autonomy Cost Efficiency Functional Performance Miniaturization Quality, Ruggedness and Adaptability Biochips Radio Interface Sensor Actuator Mixed-Signal Sub-Systems Processor / Storage Power Digital Advanced CMOS 3 3
HPMS Sensor & Actuator Solutions Timing Frequency synthesis Humidity Temperature Acidity Shock Pressure Magnetic field Light Radio Interface Sensor Actuator Mixed-Signal Sub-Systems Digital Advanced CMOS Processor / Storage Power CO 2 4 4
What can we do with CMOS? Additional layers on top of finished wafer 4..6 metal interconnect: - 5.6 9µm-thick mix of Al/Ti(N)/W conductors in oxide/nitride matrix C/Z transducers - RH, ph, Gas (CO2, CO) Selective removals of materials: -Mechanical transducers (shock, pressure) - Thermal actuation and sensing (ph; CO2) active devices level: - diodes, mosfet s, bipolars Si electronic properties: - Eg(T) (T transducer) - photoconductivity (ALS)
CMOS multiple sensor integration KOALA First CMOS integrated sensors prototype demonstration: - Wireless read-out - Single chip with Temperature, Relative Humidity and Ambient Light sensors 6
NXP Research Prototype (KOALA) CMOS integrated sensors test-chip Add-on to baseline CMOS : Gas phase (humidity, CO2, O2, C2H4), Liquid (Immersion, ph), Mechanical Shock, Pressure and Ambient Light sensors
MEMS Timing Devices MEMS based oscillator MEMS resonator vacuum seal resonator On-wafer vacuum sealed MEMS resonator CMOS14 amplifier CMOS amplifier accurate clock signal 8
price A MEMS resonator is small, cheap, and Si Small 15 MHz MEMS resonator 0.4X0.4X0.15 mm 3 Inexpensive Processed 200 mm wafer contains ~ 100,000 devices Scalable quartz min. product height: 400 um +/-10% 15 MHz quartz resonator 2.5X2.0X0.55 mm 3 Standard back-end processing (plastic molded packaging) Allows integration CMOS MEMS product height: <150 um quartz miniaturization Less components 9
Frequency offset [ppm] MEMS Timing Device technology Low temperature drift High frequency 200 AT-cut quartz crystal 100 0 0 20 60 100 140 180-100 Si-SiO 2 m m 3.15 m m m World s smallest MEMS resonator!! -200 m -300-400 Quartz tuning fork Uncompensated Si Temperature [ o C] m 10 m On-wafer package Low noise Q~100,000 @26MHz Phase noise (dbc/hz) -30-40 -50-60 -70-80 -90-100 -110-120 -130 Oscillation @ 56MHz 1e+1 1e+2 1e+3 Frequency offset (Hz) 10 October 4, 2011
Capacitive pressure sensor Capacitive pressure sensor A (static) pressure causes a deflection of the membrane and thus a change in the capacitance. For a circular membrane with electrode radius R and gap height g and electrode isolation thickness h diel and deflection profile w(r,p) ε A g 0 C C P R 2 rdr h g w r, P 0 diel r 0 g h R 11
1.5 mm 0.6 mm Advantages of capacitive sensor on CMOS Capacitive pressure sensor low-power operation Pressure sensor integrated on CMOS Low parasitic coupling: increased S-N Reduced size & thickness for same sensitivity (>6x) Single-die advantage Piezoresistive read-out: dual die Capacitive read-out: single die ASIC 5 mm 2 mm 0.4 mm 1.5 mm 5 mm 1.2 mm 12
Pressure (mbar) Height (m) Pressure sensor performance Pressure resolution is better than 0.02 mbar (i.e. 2 Pa or 16 cm!!!) due to the 19 bit resolution of the capacitance to digital converter 1021.58 1021.56 on the table 1.2 1.0 1021.54 1021.52 1021.50 1021.48 1021.46 1021.44 1021.42 on the ground 0 50 100 150 200 Time (s) 0.8 0.6 0.4 0.2 0.0-0.2 13
Size (nm) CMOS scaling in relation to bio-sensing 1000 100 Chlamydia HIV Prokaryotes Viruses S G D 10 IgG Proteins 1 0.1 DNA base pair pitch Small molecules 2010 2013 2016 2019 2022 Mouse IgG Gate length = 33 nm Year of production (ITRS 2009)
NXP Biosensor technology Standard C90 nm CMOS chip design Individual addressable electrodes On-chip data storage On-chip calibration 256 x 256 nanoelectrodes 8 A/D converters 4 temperature sensors Label-free capacitive detection on 180 nm nano-electrodes electrolyte C eff. A d Sensor principle electrode Sensor configuration AFM picture nano-electrodes
Bio-sensor unique selling points Label-free detection platform applicable for affinity sensing: DNA/proteins Ability for multiplexing Very good time resolution: 0.2 s allows kinetic measurements Potential to measure in pm range Based on standard CMOS chip manufacturing cost-effective
AMR sensor applications Window wiper using 2 angle sensors KMZ43T Adaptive steering Using 3 angle sensors KMZ41 Steering Wheel position Throttle control using 2 angle sensors KMA199E ABS using 4 wheel speed sensors KMI15 17
The AMR Effect Relation b/w Resistivity and Direction of Magnetisation Due to the AMR effect in so-called transition metals (TMs) (e.g. Fe, Co and Ni) the electrical resistivity depends on the angle between current and magnetization direction β = 0 R = R 0 + ΔR = R max β = 90 R = R 0 = R min + β - R = R 0 + ΔR cos 2 β Current MR ratio Typical MR ratio for NiFe 81:19 2,2% (R - R )/ R =DR/ R 18 October 4, 2011
Principle of AMR based Rotational Speed Measurement Gear wheel Sensor Magnetic field lines Direction of motion Magnet a.) b.) c.) d.) position 19
Key messages Sensors & Actuators are natural fit to NXP s HPMS strategy Go with the (CMOS process) flow: Mainstream CMOS forms a baseline for many of our process developments Trend towards co-integration of Sensors & Actuators on CMOS Several sensors on a single die: parallel processing & correlation possible CMOS circuitry close to sensor : low parasitics, improved power efficiency Sensors & Actuator development requires holistic approach: Co-design of driver/reader electronics together with sensor/actuator 20 October 4, 2011
Acknowledgement Wim Besling Youri Ponomarev Frederik Vanhelmont Frans Widdershoven 21 October 4, 2011