NXH8B1HQSG Dual Boost Power Module 1 V, 4 A IGBT with SiC Rectifier The NXH8B1HQSG is a power module containing a dual boost stage consisting of two 4 A / 1 V IGBTs, two 15 A / 1 V silicon carbide diodes, two 5 A / 16 V anti parallel diodes for the IGBTs and two 5 A / 16 V bypass rectifiers. An on board thermistor is included. Features Dual Boost 4 A / 1 V IGBT + SiC Rectifier Hybrid Module 5 A / 16 V Bypass and Anti parallel Diodes IGBT Specifications: V CE(SAT) =. V, E SW = 18 J SiC Rectifier Specification: V F = 1.4 V Solderable Pins Thermistor Typical Applications Solar Inverter Uninterruptible Power Supplies QBOOST CASE 18AJ 5,6,15,16 MARKING DIAGRAM 7, 8 9,1 D5 Bypass Diode 1 T1 Boost IGBT 1 D3 Boost Diode D1 IGBT Protection Diode D IGBT Protection Diode D6 Bypass Diode D4 Boost Diode T Boost IGBT 13,14 11,1 NXH8B1HQSG ATYYWW NXH8B1HQSG = Device Code YYWW = Year and Work Week Code A = Assembly Site Code T = Test Site Code G = Pb Free Package PIN CONNECTIONS 19 3,4 17,18 1 NTC Thermistor Figure 1. NXH8B1HQSG Schematic Diagram ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 16 December, 17 Rev. 1 Publication Order Number: NXH8B1HQ/D
NXH8B1HQSG Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) T J = unless otherwise noted Rating Symbol Value Unit BOOST IGBT Collector Emitter Voltage V CES 1 V Gate Emitter Voltage V GE ± V Continuous Collector Current @ T h = 8 C (T J = 175 C) I C 41 A Pulsed Collector Current (T J = 175 C) I Cpulse 13 A Maximum Power Dissipation @ T h = 8 C (T J = 175 C) P tot 13 W Short Circuit Withstand Time @ V GE = 15 V, V CE = 6 V, T J 15 C T sc 5 s Minimum Operating Junction Temperature T JMIN 4 C Maximum Operating Junction Temperature T JMAX 15 C BOOST DIODE Peak Repetitive Reverse Voltage V RRM 1 V Continuous Forward Current @ T h = 8 C (T J = 175 C) I F 4 A Maximum Power Dissipation @ T h = 8 C (T J = 175 C) P tot 79 W Surge Forward Current (6 Hz single half sine wave) I FSM 69 A I t value (6 Hz single half sine wave) I t 19 A s Minimum Operating Junction Temperature T JMIN 4 C Maximum Operating Junction Temperature T JMAX 15 C BYPASS DIODE / IGBT PROTECTION DIODE Peak Repetitive Reverse Voltage V RRM 16 V Continuous Forward Current @ T h = 8 C (T J = 175 C) I F 46 A Repetitive Peak Forward Current (T J = 175 C, t p limited by T Jmax ) I FRM 13 A Power Dissipation Per Diode @ T h = 8 C (T J = 175 C) P tot 66 W Minimum Operating Junction Temperature T JMIN 4 C Maximum Operating Junction Temperature T JMAX 15 C THERMAL PROPERTIES Storage Temperature range T stg 4 to 15 C INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 6 Hz V is 3 V RMS Creepage distance 1.7 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. Table. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit Module Operating Junction Temperature T J 4 (T jmax 5) C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
NXH8B1HQSG Table 3. ELECTRICAL CHARACTERISTICS T J = unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit BOOST IGBT CHARACTERISTICS Collector Emitter Cutoff Current V GE = V, V CE = 1 V I CES A Collector Emitter Saturation Voltage V GE = 15 V, I C = 4 A, T J = V CE(sat)..5 V V GE = 15 V, I C = 4 A, T J = 15 C.16 Gate Emitter Threshold Voltage V GE = V CE, I C = 1.5 ma V GE(TH) 5.45 6.4 V Gate Leakage Current V GE = V, V CE = V I GES na Turn on Delay Time T J = t d(on) 7 ns Rise Time V CE = 7 V, I C = 4 A, t r 19 Turn off Delay Time t d(off) 94 Fall Time t f 78 Turn on Switching Loss per Pulse E on 54 J Turn off Switching Loss per Pulse E off 164 Turn on Delay Time T J = 1 t d(on) 7 ns Rise Time V CE = 7 V, I C = 4 A, t r Turn off Delay Time t d(off) 11 Fall Time t f 189 Turn on Switching Loss per Pulse E on 6 J Turn off Switching Loss per Pulse E off 359 Input Capacitance V CE = 5 V, V GE = V, f = 1 khz C ies 97 pf Output Capacitance C oes Reverse Transfer Capacitance C res 17 Total Gate Charge V CE = 6 V, I C = 4 A, V GE = 15 V Q g 4 nc Thermal Resistance chip to heatsink Thermal grease, Thickness < 1 m, =.84 W/mK R thjh.9 C/W BOOST DIODE CHARACTERISTICS Diode Reverse Leakage Current V R = 1 V I R 3 A Diode Forward Voltage I F = 15 A, T J = V F 1.4 1.7 V I F = 15 A, T J = 15 C 1.95 Reverse Recovery Time T J = t rr 7 ns Reverse Recovery Charge V CE = 7 V, I C = 4 A, Q rr 8 nc Peak Reverse Recovery Current I RRM 16 A Peak Rate of Fall of Recovery Current di/dt 18 A/ s Reverse Recovery Energy E rr 13 J Reverse Recovery Time T J = 1 t rr 8 ns Reverse Recovery Charge V CE = 7 V, I C = 4 A, Q rr 5 nc Peak Reverse Recovery Current I RRM 15 A Peak Rate of Fall of Recovery Current di/dt 94 A/ s Reverse Recovery Energy E rr 11 J Thermal Resistance chip to heatsink Thermal grease, Thickness < 1 m, =.84 W/mK R thjh 1.1 C/W BYPASS DIODE/IGBT PROTECTION DIODE CHARACTERISTICS Diode Reverse Leakage Current V R = 16 V, T J = I R 1 A 3
NXH8B1HQSG Table 3. ELECTRICAL CHARACTERISTICS T J = unless otherwise noted Parameter Test Conditions Symbol BYPASS DIODE/IGBT PROTECTION DIODE CHARACTERISTICS Diode Forward Voltage I F = 5 A, T J = V F 1. 1.4 V Thermal Resistance chip to heatsink Min Typ I F = 5 A, T J = 15 C.9 Thermal grease, Thickness < 1 m, =.84 W/mK Max Unit R thjh 1.44 C/W THERMISTOR CHARACTERISTICS Nominal resistance R 5 k Nominal resistance T = 1 C R 1 1486 Deviation of R5 R/R 5 5 % Power dissipation P D mw Power dissipation constant mw/k B value B(5/5), tolerance ±3% 395 K B value B(5/1), tolerance ±3% 3998 K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Orderable Part Number Marking Package Shipping NXH8B1HQSG QBOOST NXH8B1HQSG QBOOST Case 18AJ (Pb Free and Halide Free Solder Pins) 4 Units / Blister Tray 4
NXH8B1HQSG TYPICAL CHARACTERISTICS Boost IGBT & Boost Diode 15 15 17 V to 1 V 11 V T J = 1 1 9 6 3 4 V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 1. IGBT Typical Output Characteristics 6 8 1 V 9 V 8 V 7 V 1 9 6 3 T J = 15 C 1 17 V to 1 V 11 V 3 4 5 6 7 V CE, COLLECTOR EMITTER VOLTAGE (V) 1 V 9 V 8 V 7 V Figure. IGBT Typical Output Characteristics 8 15 18 1 9 6 3 T J = 15 C T J = I F, FORWARD CURRENT (A) 15 1 9 6 3 T J = T J = 15 C 4 6 8 1 1.5 1. 1.5..5 V GE, GATE EMITTER VOLTAGE (V) V F, FORWARD VOLTAGE (V) Figure 3. IGBT Typical Transfer Characteristics Figure 4. Diode Forward Characteristic E ON, TURN ON LOSS ( J) 1615 1415 115 115 815 615 415 15 15 V CE = 7 V 15 1 3 4 5 6 7 8 1 3 4 5 6 7 1 Figure 5. Typical Turn On Loss vs. IC E OFF, TURN OFF LOSS ( J) 715 615 515 415 315 15 115 V CE = 7 V 1 Figure 6. Typical Turn Off Loss vs. IC 8 5
NXH8B1HQSG TYPICAL CHARACTERISTICS Boost IGBT & Boost Diode 4 4 1 18 t f @ 1 35 3 T d(on) @ 1 T d(on) @ TIME (ns) 15 1 9 T d(off) @ T d(off) @ 1 TIME (ns) 5 15 t r @ t r @ 1 6 3 1 1 t f @ V CE = 7 V 5 V CE = 7 V 3 4 5 6 7 8 1 3 4 5 6 7 8 Figure 7. Typical Switching Times vs. IC Figure 8. Typical Switching Times vs. IC t rr, REVERSE RECOVERY TIME (ns) I rrm, REVERSE RECOVERY CURRENT (A) 45 4 35 3 5 15 1 5 18 16 14 1 1 8 1 Figure 9. Typical Reverse Recovery Time vs. IC Figure 11. Typical Reverse Recovery Peak Current vs. IC Q rr, REVERSE RECOVERY CHARGE (nc) di/dt, DIODE CURRENT SLOPE (A/ s) 4 35 3 5 V CE = 7 V 15 V CE = 7 V 1 1 3 4 5 6 7 8 1 3 4 5 6 7 8 1 14 1 1 8 6 1 Figure 1. Typical Reverse Recovery Charge vs. IC 1 4 V CE = 7 V V CE = 7 V 1 3 4 5 6 7 8 1 3 4 5 6 7 Figure 1. Typical Diode Current Slope vs. IC 8 6
NXH8B1HQSG TYPICAL CHARACTERISTICS Boost IGBT & Boost Diode E rr, REVERSE RECOVERY ENERGY ( J) 18 16 14 1 1 8 6 4 V CE = 7 V 1 1 3 4 5 6 7 8 V GE, GATE VOLTAGE (V) 16 14 1 1 8 6 4 1 V CE = 6 V I C = 4 A 3 4 5 Q G, GATE CHARGE (nc) Figure 13. Typical Reverse Recovery Energy vs. IC Figure 14. Gate Voltage vs. Gate Charge 1 R(t), SQUARE WAVE PEAK ( C/W) 1 DUT = 5% 3%.1 1% 5% %.1 1%.1 Single Pulse.1 1.E 6 1.E 5 1.E 4 1.E 3 1.E 1.E 1 1.E+ 1.E+1 ON PULSE WIDTH (s) Figure 15. IGBT Transient Thermal Impedance R(t), SQUARE WAVE PEAK ( C/W) 1 1.1.1.1 DUT = 5% 3% 1% 5% % 1% Single Pulse.1 1.E 6 1.E 5 1.E 4 1.E 3 1.E 1.E 1 1.E+ 1.E+1 ON PULSE WIDTH (s) Figure 16. Diode Transient Thermal Impedance 7
NXH8B1HQSG TYPICAL CHARACTERISTICS IGBT Protection Diode and Bypass Diode 1 15 C I F, FORWARD CURRENT (A) 8 6 4.3.6.9 1. V F, FORWARD VOLTAGE (V) Figure 17. Diode Forward Characteristic 1.5 R(t), SQUARE WAVE PEAK ( C/W) 1 1.1.1.1 DUT = 5% 3% 1% 5% % 1% Single Pulse.1 1.E 6 1.E 5 1.E 4 1.E 3 1.E 1.E 1 1.E+ 1.E+1 ON PULSE WIDTH (s) Figure 18. Diode Transient Thermal Impedance TYPICAL CHARACTERISTICS Thermistor 4K K RESISTANCE ( ) 16K 1K 8K 4K 5 45 65 85 15 TEMPERATURE ( C) Figure 19. Thermistor Characteristic 15 8
NXH8B1HQSG PACKAGE DIMENSIONS PIM, 55x3.5 / QBOOST CASE 18AJ ISSUE A 9
NXH8B1HQSG PACKAGE DIMENSIONS PIM, 55x3.5 / QPACK CASE 18AB ISSUE D 1
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