Power MOSFET PRODUCT SUMMARY (V) 400 V R DS(on) (Ω) = 10 V 1.8 Q g (Max.) (nc) 0 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single TO-0AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel MOSFET FEATURES Dynamic dv/dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?9991 Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-rohs-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details. DESCRIPTION Available RoHS* COMPLIANT Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-0AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-0AB contribute to its wide acceptance throughout the industry. TO-0AB IRF70PbF SiHF70-E3 IRF70 SiHF70 ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage 400 V Gate-Source Voltage ± 0 V Continuous Drain Current at 10 V T C = 5 C 3.3 I D T C = 100 C.1 A Pulsed Drain Current a I DM 13 Linear Derating Factor 0.40 W/ C Single Pulse Avalanche Energy b E AS 190 mj Repetitive Avalanche Current a I AR 3.3 A Repetitive Avalanche Energy a E AR 5.0 mj Maximum Power Dissipation T C = 5 C P D 50 W Peak Diode Recovery dv/dt c dv/dt 4.0 V/ns Operating Junction and Storage Temperature Range T J, T stg -55 to 150 Soldering Recommendations (Peak Temperature) d for 10 s 300 C Mounting Torque 6-3 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J = 5 C, L = 30 mh, R g = 5 Ω, I AS = 3.3 A (see fig. 1). c. I SD 3.3 A, di/dt 65 A/μs, V DD, T J 150 C. d. 1.6 mm from case. 10 lbf in 1.1 N m S14-355-Rev. C, 08-Dec-14 1 Document Number: 91043
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R thja - 6 Case-to-Sink, Flat, Greased Surface R thcs 0.50 - C/W Maximum Junction-to-Case (Drain) R thjc -.5 SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage = 0 V, I D = 50 μa 400 - - V Temperature Coefficient Δ /T J Reference to 5 C, I D = 1 ma - 0.51 - V/ C Gate-Source Threshold Voltage (th) =, I D = 50 μa.0-4.0 V Gate-Source Leakage I GSS = ± 0 - - ± 100 na = 400 V, = 0 V - - 5 Zero Gate Voltage Drain Current I DSS = 30 V, = 0 V, T J = 15 C - - 50 μa Drain-Source On-State Resistance R DS(on) = 10 V I D =.0 A b - - 1.8 Ω Forward Transconductance g fs = 50 V, I D =.0 A b 1.7 - - S Dynamic Input Capacitance C iss VGS = 0 V, - 410 - Output Capacitance C oss = 5 V, - 10 - pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 5-47 - Total Gate Charge Q g I D = 3.3 A, - - 0 Gate-Source Charge Q gs = 10 V = 30 V, - - 3.3 nc Gate-Drain Charge Q gd see fig. 6 and 13 b - - 11 Turn-On Delay Time t d(on) - 10 - Rise Time t r V DD = 00 V, I D = 3.3 A - 14 - Turn-Off Delay Time t d(off) R g = 18 Ω, R D = 56 Ω, see fig. 10 b - 30 - ns Fall Time t f - 13 - Internal Drain Inductance L D Between lead, D - 4.5-6 mm (0.5") from package and center of G Internal Source Inductance L S die contact - 7.5 - Drain-Source Body Diode Characteristics D Continuous Source-Drain Diode Current I MOSFET symbol S - - 3.3 showing the G integral reverse Pulsed Diode Forward Current a I SM S p - n junction diode - - 13 A Body Diode Voltage V SD T J = 5 C, I S = 3.3 A, = 0 V b - - 1.6 V Body Diode Reverse Recovery Time t rr - 70 600 ns Body Diode Reverse Recovery Charge Q rr T J = 5 C, I F = 3.3 A, di/dt = 100 A/μs b - 1.4 3.0 μc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle %. S nh S14-355-Rev. C, 08-Dec-14 Document Number: 91043
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) I D, Drain Current (A) 91043_01 10 1 10 0 10-1 10-10 -1 Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 10 0 10 1 4.5 V 0 µs Pulse Width T C = 5 C, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, T C = 5 C R DS(on), Drain-to-Source On Resistance (Normalized) 91043_04 3.5 3.0.5.0 1.5 1.0 0.5 I D = 3.3 A = 10 V 0.0-60 - 40-0 0 0 40 60 80 100 10 140 160 T J, Junction Temperature ( C) Fig. 4 - Normalized On-Resistance vs. Temperature I D, Drain Current (A) 10 1 10 0 10-1 Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 4.5 V Capacitance (pf) 1000 800 600 400 00 = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss C rss 10-10 -1 10 0 10 1 0 µs Pulse Width T C = 150 C 0 10 0 10 1 91043_0, Drain-to-Source Voltage (V) 91043_05, Drain-to-Source Voltage (V) Fig. - Typical Output Characteristics, T C = 150 C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 10 T J = 5 C 0 I D = 3.3 A I D, Drain-to-Source Current (A) 1 0.01 T J = 150 C = 6.V 4 5 6 7 8 9 10, Gate-to-Source Voltage (V), Gate-to-Source Voltage (V) 91043_06 16 1 8 4 = 80 V = 00 V = 30 V For test circuit see figure 13 0 0 5 10 15 0 5 Q G, Total Gate Charge (nc) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S14-355-Rev. C, 08-Dec-14 3 Document Number: 91043
I SD, Reverse Drain Current (A) 91043_07 10 1 150 C 10 0 5 C = 0 V 0.4 0.6 0.8 1.0 1. 1.4 10-1 V SD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage I D, Drain Current (A) 91043_09 3.5 3.0.5.0 1.5 1.0 0.5 0.0 5 50 75 100 15 150 T C, Case Temperature ( C) Fig. 9 - Maximum Drain Current vs. Case Temperature I D, Drain Current (A) 91043_08 10 5 10 5 1 5 5 10-5 Operation in this area limited by R DS(on) T C = 5 C T J = 150 C Single Pulse, Drain-to-Source Voltage (V) 10 µs 100 µs 1 ms 10 ms 1 5 10 5 10 5 10 3 Fig. 10a - Switching Time Test Circuit 90 % R G 10 V Pulse width 1 µs Duty factor % R D D.U.T. - V DD Fig. 8 - Maximum Safe Operating Area 10 % t d(on) t r t d(off) t f Fig. 10b - Switching Time Waveforms 10 Thermal Response (Z thjc ) 1 0 0.5 0. 0.05 0.0 0.01 Single Pulse (Thermal Response) 10-10 -5 10-4 10-3 10-1 10 P DM t 1 t Notes: 1. Duty Factor, D = t 1 /t. Peak T j = P DM x Z thjc T C 91043_11 t 1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S14-355-Rev. C, 08-Dec-14 4 Document Number: 91043
L Vary t p to obtain required I AS Q G R G 10 V t p I AS D.U.T 0.01 Ω - V DD V G Q GS Q GD Charge Fig. 1a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 50 kω t p V DD 1 V 0. µf 0.3 µf D.U.T. V - DS I AS 3 ma I G I D Current sampling resistors Fig. 1b - Unclamped Inductive Waveforms Fig. 13b - Gate Charge Test Circuit E AS, Single Pulse Energy (mj) 91043_1c 500 400 300 00 100 Top Bottom V 0 DD = 50 V 5 50 75 100 15 150 Starting T J, Junction Temperature ( C) I D 1.5 A.1 A 3.3 A Fig. 1c - Maximum Avalanche Energy vs. Drain Current S14-355-Rev. C, 08-Dec-14 5 Document Number: 91043
Peak Diode Recovery dv/dt Test Circuit D.U.T. - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period = 10 V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. = 5 V for logic level devices Fig. 14 - For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91043. S14-355-Rev. C, 08-Dec-14 6 Document Number: 91043
Package Information TO-0-1 D L H(1) Q L(1) 1 E 3 M * b(1) Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.4 4.65 67 83 b 0.69 1.0 0.07 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.04 D 14.33 15.85 0.564 0.64 E 9.96 10.5 0.39 0.414 e.41.67 0.095 05 e(1) 4.88 5.8 9 0.08 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.40 0.64 J(1).41.9 0.095 15 L 13.36 14.40 0.56 0.567 L(1) 3.33 4.04 31 59 Ø P 3.53 3.94 39 55 Q.54 3.00 00 18 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note M* = 0.05 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM e b C e(1) J(1) ASE Package Picture Xi an Revison: 14-Dec-15 1 Document Number: 6654
Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000