Gallium Nitride (GaN) Technology & Product Development IEEE IMS / MTT-S 2012 Montreal, Canada
GaN A New Enabling Technology Five times faster, higher frequency, faster on-chip logic Five times more power, smaller die, increased range and sensitivity Higher efficiency (10-20%), simplifies system integration Higher temperature operation (up to 225 C), more robust, enables new applications TriQuint GaN Bandwidth More Power Higher Efficiency Higher Temp Advanced R&D Electronic Warfare Next-Generation Radars Communication Systems New Sensors New Missions 500 GHz / 500V per ns
TriQuint GaN Process Variants GaN Process Name Frequency Drain Bias Status 0.25-µm DC 20 GHz 40V In Production (2008) 0.15-µm DC 40 GHz 20V In Release < 0.1-µm DC 100 GHz 15V Research THz E/D GaN DC 500 GHz 15V Research Broad GaN Process Roadmap
TriQuint s Technology Leadership Government RF Program Awards Program Goal Outcome TITLE III NJTT NEXT Manufacturing Readiness Better Thermal Management Faster Devices E/D Integration Higher Yield Faster Cycle times Better Models Higher Power Density for same reliability Technology Shorter Gate Technology E/D Technology Business Significance Lower Cost Better performance (Bandwidth) V, E, W - band Technology Mixed Signal MPC Switch based Amplifier Very Fast GaN switch More efficient Amplifiers W-Band LNA E/D based LNA Reduced NF > 90 GHz Extend RF and Range
Why GaN? 6.5W Ku-band GaAs Power Amplifier 20W Ku-band GaN Power Amplifier Addressing key high-performance needs Networked communications Electronic warfare systems ISR (intelligence, surveillance and reconnaissance) systems GaN delivers: Greater efficiency Reduced BOMs Reduced / eliminated combining losses 40W GaN Switch 30W Wideband GaN PA 55W Power Transistor 20W Ku-band GaN PA
WHY GaN? Lower Higher Power Combining Bandwidth Losses. Higher Bandwidth Temperature Efficiency Higher Temperature Smaller Size Higher Power for same Higher Density Insulating power Material Higher Power Band even Smaller at Size higher for Density same Smaller power gap Size Higher Power Temperature for same Density power Efficiency Lower Combining Lower RF Losses Combining losses Losses at high for same temperature Lower Power Input and Output Capacitances Higher Efficiency Higher Temperature Higher Power Operation Higher Bandwidth Higher Voltage High Power density without loosing speed Harmonic tunings Higher Efficiency 2012 2012 TriQuint Semiconductor, Inc.
WHY GaN on SiC? Higher Thermal Conductivity Lower Self Heating Better Reliability Technology 4.5 W/mm Dissipation Example Thermal Conductivity Channel Temperature Reliability GaAs 52 W/mC ~300C x1 GaN on Si 145 W/mC ~210C x120 better GaN on SiC 330 W/mC ~140C x21000 better
GaN Standard Products 2012 2012 TriQuint Semiconductor, Inc.
Power GaN Transistors Benefits High Power / PAE High Gain Design Flexibility Export Target Markets Defense EW, Radar, Comm, GP Commercial BTS, Cable, Vsat, PtP Other Instrumentation T1G6000528-Q3 DC-6GHz 9W T1G6001528-Q3 DC-6GHz 18W T1G6003028-FS DC-6GHz 30W T1G4005528-FS DC-6GHz 55W
High Power Amplifiers Benefits High Saturated Power High PAE Wide Bandwidth Target Markets Defense EW, Radar, Comm Commercial Cable, Vsat, PtP Other Instrumentation TGA2573 2-18GHz 10W TGA2576-FL 2.5-6GHz 30W TGA2593-GSG 13-15GHz 20W TGA2579-FL 14-16GHz 20W
High Power Switches Benefits High power handling Small Footprint Low control current (ua) Fast Switching Target Markets Radar Instrumentation General Purpose TGS2351-SM DC-6GHz 40W TGS2352 DC-12GHz 20W TGS2353 DC-18GHz 10W 4x4 Ceramic QFN 1.15 x 1.65 (mm) 1.15 x 1.65 (mm)
GaN Enabling the Future Low Noise Amplifiers Low NF High Gain High Survivability Higher Frequency Ka W band Power High Speed Logic (500GHz) Higher Efficiency Switch-based amplifiers Controls Limiters Mixers High performance switches
Summary TriQuint has been a GaN R&D innovator since 1999, currently leading 5 major contracts GaN is a maturing technology offering significant performance and lifetime advantages over GaAs GaN has broad appeal across many markets due to... High power density High thermal conductivity substrate Low NF TriQuint offers a broad range of GaN solutions and services: FETs, MMICs, switches, packaged transistors / amplifiers / switches integrated assemblies and foundry services TriQuint is developing new GaN processes and product solutions that improve efficiency, reduce BOMs and satisfy requirements beyond the reach of other semiconductors