Combinational Logic Gates in CMOS

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Combinational Logic Gates in CMOS References: dapted from: Digital Integrated Circuits: Design Perspective, J. Rabaey UC Principles of CMOS VLSI Design: Systems Perspective, 2nd Ed., N. H. E. Weste and K. Eshraghian EE26 Lecture Notes by Prof. K. ult UCL

Improved Loads Differential Cascade Voltage Switch Logic (DCVSL)

Example

Pass Transistor Logic

Pass-Transistor Logic Switch Network Reduced number of transistors No static power consumption

Pass Transistor Logic Control Signal P Pass Signal V F = Product Term F Z V if if P P

asic Pass Transistor Logic Model Control Signals P i Pass Signals V i F = Sum of Products F P ( V ) P 2( V 2) P n( V n )

XNOR Gate Truth Table OUT Pass Function - + - + - - + + Modified Karnaugh Map - - - -

oolean Function Unit Operation P P2 P3 P4 ND(,) XOR(,) OR(,) NOR(,) NND(,)

NMOS-only switch Problem: V does not pull up to, only to - V tn(body-effect) Cannot completely turn off the PMOS transistor Causes static power consumption

Solution Transmission Gate

Transmission Gate Implementation - - - - P P2 F(,) P3 P4 F(,) P P2 P3 - P4

Transmission Gate XNOR - - OUT

Transmission Gate (Inverting) Multiplexer S S S VDD M2 S F M S GND In S S In 2

Transmission Gate XOR

Resistance of Transmission Gate is discharged originally For NMOS, V GS = V DS, saturated or cutoff For PMOS, V GS = -, V DS increases from - to, starts out in saturation, then transitions into non-saturation Vout V tp : NMOS saturated, PMOS saturated V tp V out V DD V tn : NMOS saturated, PMOS linear V DD V tn V out : NMOS cutoff, PMOS linear

Resistance of Transmission Gate V out

pproximations ssume both in linear region, ignore body effect G eq R eq n( V ( V n DD DD V ( V V tn V V tn )( V ) ) ( V p DD V V ) tp ) ( V ssume both in saturated region G eq I n V I DD n( V p DD V tn ) 2 2V ( V DD p DD p DD V V ( V tp ) 2 tp V )( V ) V )

When Output Closely follows Input Region : NMOS unsaturated, PMOS off R on pmost nmost Region : NMOS unsaturated, PMOS unsaturated Region C: NMOS off, PMOS unsaturated Transmission gate V in

Delay in Transmission Gate Networks Distributed RC network

Elmore Delay To solve for actual delay dvi ( t) dt R C eq V i ( t) Vi ( t) 2V i( t) Estimate the dominant time constant: assume all internal nodes are pre-charged to VDD, and a step input is applied N N N C Req R eq C k jk k jk N N n( n ) 2 R eq C

Delay Optimization by uffer Insertion Delay of RC chain Delay of buffered chain m t p opt.69.7 t n m R pbuf eq C t p.69 m( m ) 2 n( m ).69 R 2 eq R eq N C n( n ).69 R 2 C n m n m t t pbuf pbuf eq C

Transmission Gate Full dder P C i C i P P S Sum Generation P P P C o Carry Generation C i C i Setup C i P

dder Truth Table C.(G) + + (P) SUM CRRY SUM = + + C CRRY = C if + = CRRY = (or ) if + =

Solution 2 Level Restoring Transistor for NMOS Only Logic Full Swing Disadvantage: More complex, larger capacitance

Proper Sizing of Level Restoring Transistor In transient, conducting path from M r to M 3 via M n when is low, switches from low to high, and X is high M r must not be too large, otherwise, X cannot be brought below threshold voltage, V M, of inverter, M r cannot be turned off

Pass-Transistors Single Transistor Pass Gate with V T = V 5V V Out 5V WTCH OUT FOR LEKGE CURRENTS

Complimentary Pass Transistor Logic Pass-Transistor Network F (a) Inverse Pass-Transistor Network F F= F=+ F=Ý (b) F= F=+ F=Ý ND/NND OR/NOR EXOR/NEXOR

4 Input NND in CPL Total number of transistors needed = 4 (including the final buffer) ut ND function is simultaneously present t phl =.5ns, t plh =.45ns

Dynamic Logic

Dynamic Logic M p Out M e In In 2 In 3 PDN C L In In 2 In 3 PUN Out M e M p C L n network p network 2 phase operation: Precharge Evaluation

Example N + 2 transistors Ratioless No static power consumption Small Noise Margins (NM L ) Requires Clock Pull-down resistance increases due to the evaluation transistor

Transient Response 6. V out Vout (Volt) 4. 2. EVLUTION PRECHRGE..e+ 2.e-9 4.e-9 6.e-9 t (nsec)

Dynamic 4 Input NND Gate Out In In 2 In 3 In 4 GND

Reliability Problems Charge Leakage M p Out () (2) C L V out precharge evaluate t M e (a) Leakage sources (b) Effect on waveforms t Dynamic Minimum circuits Clock require Frequency: a minimal > MHz clock rate

Charge Sharing (redistribution) case ) if V out < V Tn M p Out C L = C L V out t + C a V Tn V X or M a X C L V out = V out t = C a ------- V C DD V Tn V X L = M b C a case 2) if V out > V Tn M e C b C a V out = -------------------- C a + C L

Minimize Charge Sharing Keep the change in storage voltage below V tp the output might be connected to a static inverter as in Domino logic C C a L V DD V tp V tn.2 C a is normally smaller than C L, but if there is series connection of NMOS transistors, internal capacitances can be strung together and that can increase the voltage change

Charge Redistribution - Solutions M p M bl M p M bl Out Out M a M a M b M b M e M e (a) Static bleeder (b) Precharge of internal nodes

Clock Feedthrough M p Out could potentially forward bias the diode M a X C L 5V M b C a overshoot M e C b out

Clock Feedthrough and Charge Sharing output without redistribution (M a off) feedthrough V (Volt) 6 4 out internal node in PDN 2 2 3 t (nsec)

Cascading Dynamic Gates V M p Out M p Out2 In In Out V Tn Out2 V M e M e t (a) (b) Only Transitions allowed at inputs!

Domino Logic M p Out M p M r Out2 In In 2 PDN In 4 PDN Static Inverter with Level Restorer In 3 M e M e

Domino Logic - Characteristics Only non-inverting logic Very fast - Only transitions at input of inverter affects the next Domino Static inverter increases noise immunity, increase the size of PMOS to increase V M Proper sizing of inverter to drive the fan-out in optimal way dd a level-restoring transistor to overcome charge sharing and charge loss

np-cmos (Zipper CMOS) M p Out M e In In 2 In 3 PDN In 4 PUN Out2 M e M p Only transitions allowed at inputs of PUN Reduced noise margins: NM H = V tp, NM L = V tn

Full dder Circuit C C -carry C -sum C C C

np-cmos dder C i2 C i S C i C i C i C i S C i Carry Path

Manchester Carry Chain dder.5 Total rea: 225 m 48.6 m P P P 2 P 3 P 4 M M M2 M3 M4 3 2.5 2.5 C i, 3.5 3 2.5 2.5 G G G 2 G 3 G 4 C o,4 4 3.5 3 2.5 2.5

dder Truth Table C.(G) + + (P) SUM CRRY SUM = + + C = P + C CRRY = C if P = CRRY = if P = CRRY = G + PC

CMOS Circuit Styles - Summary