CREE POWER PRODUCTS 2012 REVOLUTIONIZING POWER ELECTRONICS WITH SILICON CARBIDE

CREE POWER PRODUCTS 2012 REVOLUTIONIZING POWER ELECTRONICS WITH SILICON CARBIDE

Cree, the silicon carbide expert, is leading the power semiconductor revolution. Cree, an innovator of semiconductors for power and wireless applications, lighting-class LEDs and LED lighting fixtures, is revolutionizing several industries with its use of innovative silicon carbide (SiC) materials that provide high efficiency and reliability for numerous semiconductor applications. Using SiC as a platform material to develop new power electronics devices that surpass the status quo, Cree is revolutionizing the industry. Cree s product families include power-switching devices, radio-frequency/wireless devices, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs and LED fixtures and lamps. Founded in 1987 and headquartered in Durham, NC, Cree (Nasdaq: CREE) is one of the fastest growing semiconductor producers in the world. With almost 25 years of SiC and GaN wide band gap material growth, wafer processing and device experience, Cree is one of the world s leading manufacturers of SiC-based devices for power electronics and is the world s largest pure-play wide band gap device manufacturer. Leveraging the energy efficiency of its materials technology, Cree power devices can deliver reduced size, higher frequency operation and increased efficiency for multiple applications, including power supplies, solar inverters and industrial motor drives. In use worldwide since 2002, Cree s SiC power devices are a proven platform for delivering efficiency and reliability. Cree s pioneering power electronics technology meets the demand for more efficient, more reliable and smaller power supplies. Cree has the global reach and distribution network to add flexibility and support to serve worldwide customer needs. Cree has a technology roadmap for continuous improvement in SiC production and cost reduction, as well as global reach and a strong IP portfolio to maintain technology leadership. The time for SiC technology is now don t be left behind! Our power MOSFET is the industry s first ideal SiC high voltage switching device commercially available and ready for design-in today. Together with our Schottky diodes, they establish a new benchmark for SiC power components that will replace silicon devices in critical power electronics applications. DC/DC Cree has the manpower and support to satisfy the market demand for higher energy efficiency power devices and to develop a broad portfolio of power electronic products. CENGIZ BALKAS CREE VICE PRESIDENT AND GENERAL MANAGER, POWER AND RF

LIGHTING is one of many mainstream applications that will benefit from the adoption of Cree SiC power devices. By using the industry s smallest SiC package, lighting manufacturers can reduce their overall system size and cost while increasing product performance, system efficiency and reliability. PC POWER INDUSTRIAL POWER TRACTION ELECTRIC VEHICLE AND CHARGING HVAC MOTOR DRIVES FROM HIGH-END APPLICATIONS TO MAINSTREAM ADOPTION Driving innovation and adoption. 3 EXPANSION: Reducing manufacturing costs and a broader product portfolio are opening the door for mainstream adoption. 2 INNOVATION: Expanding the existing portfolio through continuous innovation, product development and streamlined manufacturing reducing overall costs. 1 INTRODUCTION: Providing commercially available SiC power solutions for applications where energy efficiency is a key requirement. SERVERS, solar and telecom customers are currently benefitting from Cree s commercially available SiC power products. With energy efficiency a top priority, these applications utilize the high frequency switching, high voltage operation and high temperature capabilities that only SiC offers performance that silicon can t match.

Industry-leading technology and service. That s why Cree should be your power semiconductor partner. Why Cree? Because Cree has a foundation that no one can match the reasons are clear. Vertically integrated with an unprecedented command of its material supply, Cree is committed to investing in and expanding its current infrastructure and manufacturing capacity to reduce the cost of SiC power devices. Our goal is to provide the industry s best performing devices at the lowest system cost for all applications. Industry-leading power products and dedicated SiC material supply are the result of Cree s long history, expertise and intellectual property portfolio in the power semiconductor world. As the SiC market leader and the first company to produce 75mm, 100mm and now 150mm SiC wafers, Cree has the unique position of producing more than 90% of the world s SiC wafers. Well-stocked distribution channels and flexible manufacturing capabilities allow Cree to provide the product and supply options that customers need, while a large network of local Cree distributors as well as application and support teams provide crucial design assistance and SiC expertise something not many competitors can say. Cree has a commitment to continued product innovation and expansion of infrastructure. The development of the industry s first 150mm SiC wafer and investment in new fab capacity demonstrates why Cree is a leader in silicon carbide. Built to outperform silicon products and competitors wide band gap devices, Cree s quality devices have established themselves in power supply and solar inverter markets worldwide with more than 200 billion device hours in the field. 2002 2006 2007 2009 2010 2011 First 600V commercial SiC JBS Schottky diode First 1200V SiC Schottky diode Cree converts to 100mm SiC wafers increasing yields and decreasing cost Fraunhofer Institute demonstrates world s best solar inverter efficiency (>98%) with Cree SiC devices First 1700V SiC Schottky diodes Cree demonstrates first 150mm SiC wafer First 1200V SiC MOSFET

EXAMPLE: SOLAR POWER INVERTERS Broadest portfolio of voltages, current ratings and packages Reduce losses put power back on the grid Higher power density Proven reliability FROM UTILITY SCALE TO MICRO- INVERTERS, SiC INCREASES EFFICIENCY AND RELIABILITY. SiC: When efficiency and reliability matter. EXAMPLE: 500W POWER SUPPLY Reduce size and weight Reduce BOM Increase operating frequency at equivalent efficiency Increase reliability Increase system airflow SiC-BASED 500W POWER SUPPLY

Industry s only commercially available SiC MOSFET. The Cree Z-FET 1200V SiC MOSFET is revolutionizing the power electronics industry by delivering extremely fast switching speeds with ultra low switching losses, enabling engineers to achieve increased levels of energy efficiency while reducing overall system size and weight. Easy to design-in and parallel within a system, the industry s first ideal SiC MOSFET also delivers low capacitance and reduces the size of magnetics and filter components while significantly reducing cooling requirements. SiC vs Si Industry-leading efficiency and power density 100% CMF20120D CMF10120D Si MOSFET Si IGBT All conditions being equal, the Cree Z-FET 1200V SiC MOSFET handles more power with higher efficiency than 99% competing silicon switches. High switching and conduction losses limit comparable Si IGBT and MOSFET devices using Efficiency 98% 97% conventional silicon technology. Comparison Conditions: Switching Frequency = 30 khz 96% 3x the current at higher efficiency Switch Voltage = 800V Duty Cycle = 50% 95% Average Current = 1/2 peak current 94% 0 5 10 15 20 25 Peak Switch Current CMF20120D Si MOSFET Si IGBT 1E-2 Lowest leakage current in the industry Leakage Current (A) 1E-3 1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 25 50 75 100 125 150 T C ( C) Utilizing the optimal power semiconductor material, the Cree Z-FET SiC MOSFET achieves minimal leakage current at the rated blocking voltage over the complete operating temperature range. The Cree SiC advantage results in 1/100 th the leakage current of comparable Si IGBT and MOSFET devices. Comparison Conditions: VDS = 1200V T C (Case Temperature) Range 25 150 C Ramped TDDB at 175 C Gate oxide reliability of 400 million years 0.98 now that s reliable Cumulative Failure Fraction 0.8 0.5 0.2 0.1 0.05 0.02 After extensive testing on thousands of Cree Z-FET SiC MOSFETs, the TDDB test results (at 175 C) predict an MTTF of approximately 400 million years at a gate voltage of +20V. Cree s innovation, engineering and manufacturing expertise have overcome the issues with dielectric strength and reliability of oxides on SiC. 1e+5 1e+6 1e+7 1e+8 1e+9 Lifetime (yr) Projected to 175 C and +20V

The Cree Z-FET 1200V SiC MOSFET CMF20120D V DS = 1200V R DS(on) = 80 mω I D(MAX) = 33A CMF10120D V DS = 1200V R DS(on) = 160 mω I D(MAX) = 24A Visit www.cree.com/mosfet to download the SPICE model and find out more about the industry s first SiC MOSFET. REVOLUTIONIZE YOUR POWER INVERTER DESIGN WITH CREE Z-FET SiC MOSFETs DC IN 3 PHASE AC OUT DC IN 3 PHASE AC OUT SILICON THREE LEVEL INVERTER SILICON CARBIDE TWO LEVEL INVERTER Increase power density up to 50% with SiCbased inverters. Use fewer components, reduce system size, complexity and overall cost while delivering the industry s highest system efficiency and reliability.

Cree Z-Rec Schottky diodes deliver the industry s best silicon carbide performance, efficiency and product range. With the industry s largest silicon carbide product portfolio, Cree Z-Rec SiC Schottky diodes provide solutions for many power applications in a wide range of packages, voltages and amperages that deliver the industry s highest SiC blocking voltage and switching frequency capability. Cree s unique design advantages include a unipolar construction that eliminates turn-off switching losses, a junction barrier that minimizes leakage current at high voltage and a merged PIN design to enable extremely high surge current capability. Enhance your designs with the industry s most innovative power devices. CREE SiC BARE DIE FOR POWER MODULES The LED lighting power solution The Cree Z-Rec QFN is the industry s smallest commercially available Schottky diode at 3.3 x 3.3 x 1mm and is optimized to solve thermal and EMI issues associated with non-isolated LED lighting. By enabling lower system temperatures with zero reverse recovery, the QFN achieves higher system efficiency and lower EMI in a package specifically designed for tight spaces. The silicon compromise is a thing of the past. Take advantage of the ultra low loss, high-frequency operation, zero reverse recovery current, ultra fast switching and positive temperature coefficient with bare-die Cree SiC diodes and MOSFETs. Cree s bare die power devices (MOSFETs and Schottky diodes) bring the advantages of SiC material to power modules and microelectronic assemblies. Motor drives, solar and wind power inverters, switchmode power supplies, UPS and induction heating applications will benefit from the performance, efficiency and reliability of silicon carbide. Scan this QR code to find out how Cree Z-Rec Schottky diodes can help you get the most out of your next power design, or visit www.cree.com/diodes.

High blocking voltages for high power applications Achieving reverse-blocking voltages above 1200V can require the use of two silicon diodes, causing thermal management, voltage isolation, efficiency and EMI issues. Cree 1700V Z-Rec Schottky diodes solve this problem by delivering the industry s highest blocking voltage and zero reverse recovery in a discrete package, enabling design engineers to decrease component count and reduce system size. 3 Reverse Recovery Losses 1700V 10A SiC Schottky vs T 4A for 40ns, Capacitive 85A for 360ns, Recovery 1700V 16A Si PIN Diode 3 20.0 A B W 200ns 2.50GS/s T 10.00 % 10k points Aux 667mV SiC Schottky diodes achieve zero reverse recovery, virtually eliminating diode switching losses and reducing overall system losses and EMI, while improving reliability. CREE Z-REC SCHOTTKY DIODES 600V: 1,2,3,4,6,8,10,20A 650V: 4,6,8,10A 1200V: 2,5,8,10,15,20,30,40A 1700V: 10,25A TO-263 TO-252 TO-220 TO-247 Cree Z-Rec Schottky diodes: Improve system efficiency Reduce system size Increase system reliability Simplify designs/circuitry Shorten design cycles Provide high frequency switching Reduce switching losses Improve EMI signatures Lower system cost

CREE POWER PRODUCT SELECTOR GUIDE Cree Z-FET SiC MOSFETs: Bare die Cree Z-FET SiC MOSFETs Cree Z-Rec SiC diodes: Bare die Cree Z-Rec SiC diodes CPMF-1200-S080 B Metal Std Al anode Ni/Ag cathode RDS(on) Rating Voltage Rating Four Digit Series CMF 20 120 D Package Code Voltage Rating Amperage Rating Three Digit Series CPW3-1700-S010 B Metal Std Al anode Ni/Ag cathode Amperage Rating Voltage Rating Four Digit Series C4D 05 120 E Package Code Voltage Rating Amperage Rating Three Digit Series Cree Z-FET SiC MOSFET - Bare Die Part Number Package V DS (V) I D TC = 25 I D TC = 100 RDS(on) (mω) Q g (nc) T J ( C) [Max] CPMF-1200-S080B Bare Die 1200V 46 25.9 80 90.8 150 YES CPMF-1200-S160B Bare Die 1200V 26 14.7 160 47 150 YES Recommend for New Designs? Cree Z-FET SiC MOSFET Part Number Package V DS (V) I D TC = 25 I D TC = 100 RDS(on) (mω) Q g (nc) T J ( C) [Max] CMF20120D TO-247-3 1200V 33 17 80 90.8 125 YES CMF10120D TO-247-3 1200V 24 12 160 47 125 YES Recommend for New Designs? Cree Z-Rec SiC Schottky diodes - Bare Die Part Number Package V rrm (V) I f TC = 150 I f TC = 100 Q C (nc) CPWR-0600-S001B Bare Die 600 1 2.7 3.3 YES CPW3-0600-S002B Bare Die 600 2 5.6 4.8 YES CPW3-0600-S003B Bare Die 600 3 7.8 6.7 YES CPW3-0600-S004B Bare Die 600 4 10.8 8.5 YES CPW2-0600-S006B Bare Die 600 6 12.6 16 YES CPW2-0600-S008B Bare Die 600 8 15.5 21 YES CPW2-0600-S010B Bare Die 600 10 20.3 25 YES CPW3-0650-S004B Bare Die 650 4 10.8 8.5 YES CPW2-0650-S006B Bare Die 650 6 12.6 16 YES CPW2-0650-S008B Bare Die 650 8 15.5 21 YES CPW2-0650-S010B Bare Die 650 10 20.3 25 YES CPW4-1200-S002B Bare Die 1200 2 10 15 YES CPW4-1200-S005B Bare Die 1200 5 13 34.5 YES CPW4-1200-S008B Bare Die 1200 7.5 17.1 49 YES CPW4-1200-S010B Bare Die 1200 10 22.9 66 YES CPW4-1200-S015B Bare Die 1200 15 28.2 96 YES CPW4-1200-S020B Bare Die 1200 20 33.8 130 YES CPW2-1200-S050B Bare Die 1200 50 305 YES CPW3-1700-S010B Bare Die 1700 10 20 70 YES CPW3-1700-S025B Bare Die 1700 25 37 170 YES Recommend for New Designs?

Cree Z-Rec SiC Schottky diodes Part Number Package V rrm (V) I f TC = 150 I f TC = 100 Q C (nc) CSD01060A TO-220 600 1 2.7 3.3 YES CSD01060E DPAK (TO-252) 600 1 2.7 3.3 YES C3D02060A TO-220 600 2 5.6 4.8 YES C3D02060E DPAK (TO-252) 600 2 5.6 4.8 YES C3D02060F TO-220 (FPAK) 600 2 2.7 4.8 YES C3D03060A TO-220 600 3 7.8 6.7 YES C3D03060E DPAK (TO-252) 600 3 7.8 6.7 YES C3D03060F TO-220 (FPAK) 600 3 3.3 6.7 YES C3D04060A TO-220 600 4 10.8 8.5 YES C3D04060E DPAK (TO-252) 600 4 10.8 8.5 YES C3D04060F TO-220 (FPAK) 600 4 4 8.5 YES C3D06060A TO-220 600 6 12.6 16 YES C3D06060G D2PAK (TO-263) 600 6 12.6 16 YES C3D06060F TO-220 (FPAK) 600 6 4.5 16 YES C3D08060A TO-220 600 8 15.5 21 YES C3D08060G D2PAK (TO-263) 600 8 15.5 21 YES C3D10060A TO-220 600 10 20.3 25 YES C3D10060G D2PAK (TO-263) 600 10 20.3 25 YES C3D20060D TO-247 600 20 40 50 YES C3D04065A TO-220 650 4 10.8 8.5 YES C3D06065A TO-220 650 6 12.6 16 YES C3D08065A TO-220 650 8 15.5 21 YES C3D10065A TO-220 650 10 20.3 25 YES C4D02120A TO-220 1200 2 8.6 15 YES C4D02120E DPAK (TO-252) 1200 2 10 15 YES C2D05120A TO-220 1200 5 11 28 NO C4D05120A TO-220 1200 5 10.9 34.5 YES C4D05120E DPAK (TO-252) 1200 5 13 34.5 YES C4D08120A TO-220 1200 7.5 15.9 49 YES C4D08120E DPAK (TO-252) 1200 7.5 17.1 49 YES C2D10120A TO-220 1200 10 18 61 NO C2D10120D TO-247 1200 10 23 56 NO C4D10120A TO-220 1200 10 18.7 66 YES C4D10120D TO-247 1200 10 23.6 69 YES C4D10120E DPAK (TO-252) 1200 10 22.9 66 YES C4D15120A TO-220 1200 15 28.2 96 YES C2D20120D TO-247 1200 20 46.6 122 NO C4D20120A TO-220 1200 20 33.8 130 YES C4D20120D TO-247 1200 20 43 66 YES C4D30120D TO-247 1200 30 60 192 YES C4D40120D TO-247 1200 40 77.2 130 YES C3D10170H TO-247-2 1700 10 20 70 YES C3D25170H TO-247-2 1700 25 37 170 YES Recommend for New Designs?

Visit the Cree power product selector guide. 4600 Silicon Drive Durham, NC 27703 Phone: (919) 407-7888 US Toll Free: (800) 533-2583 Fax: (919) 407-5451 powersales@cree.com www.cree.com/power Copyright 2012 Cree, Inc. All rights reserved. This document is provided for informational purposes only and is not a warranty or specification. The information in this document is subject to change without notice. Cree, the Cree logo are registered trademarks and Z-FET and Z-REC are trademarks of Cree, Inc. Published February 2012 Printed on 100% recycled paper with non-toxic soy-based ink.