Ultrafast Soft Recovery Diode, 30 FRED Pt Gen 4 3 2 TO-247D 2L Base cathode PRODUT SUMMRY Package TO-247D 2L I F(V) 30 V R 600 V V F at I F.9 V t rr typ. see Recovery table T J max. 75 Diode variation Single die 2 3 athode node FETURES Gen 4 FRED Pt technology Low I RRM and reverse recovery charge Very low forward voltage drop Polyimide passivated chip for high reliability standard 75 operating junction temperature E-Q qualified, meets JESD 20 class whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 DESRIPTION Gen 4 Fred technology, state of the art, ultralow V F, soft switching optimized for Discontinuous (ritical) Mode (DM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS MX. UNITS Peak repetitive reverse voltage V RRM 600 V verage rectified forward current I F(V) T = 3 30 Non-repetitive peak surge current I FSM T = 25, t p = 8.3 ms half sine wave 240 Operating junction and storage temperature T J, T Stg -55 to +75 ELETRIL SPEIFITIONS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μ 600 - - I F = 30 -.36.6 I F = 60 -.6 - Forward voltage V F I F = 30, T J = 25 -.23 - V I F = 60, T J = 25 -.5 - I F = 30, T J = 50 -.9.35 I F = 60, T J = 50 -.48 - V R = V R rated - - 50 Reverse leakage current I R T J = 25, V R = V R rated - - 500 μ Junction capacitance T V R = 600 V - 8.3 - pf Revision: 9-Jan-7 Document Number: 95929 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?90
DYNMI REOVERY HRTERISTIS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS T J = 25-65 - Reverse recovery time t rr ns T J = 25-90 - I F = 30 T J = 25-8 - Peak recovery current I RRM di F /dt = 0 /μs T J = 25-32 - V R = 400 V T J = 25-850 - Reverse recovery charge Q rr n T J = 25-850 - THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Thermal resistance, junction to case R thj - - /W Thermal resistance, case to heatsink R ths - 0.4 - Weight Mounting torque - 6.0 - g - 0.2 - oz. Marking device ase style TO-247D 2L E4PU3006LH 6.0 (5) - 2 () kgf cm (lbf in) I F - Instantaneous Forward urrent () 0 T J = 75 T J = 50 T J = 25 T J = 25 0 0.5.0.5 2.0 2.5 3.0 3.5 V F -Forward Voltage Drop (V) Fig. - Typical Forward Voltage Drop haracteristics I R - Reverse urrent (μ) 0 75 50 25 0. 25 0.0 0.00 0 200 400 600 V R - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse urrent vs. Reverse Voltage 0 T - Junction apacitance (pf) 0 200 300 400 500 600 V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Revision: 9-Jan-7 2 Document Number: 95929 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?90
Z thj - Thermal Impedance Junction to ase ( /W) 0. 0.50 0.20 0. 0.05 0.02 0.0 single pulse 0.0 0.00 0.0 0. t - Rectangular Pulse Duration (s) Fig. 4 - Max. Thermal Impedance Z thj haracteristics 80 40 llowable ase Temperature ( ) 70 60 50 40 30 20 Square wave (D = 0.50) 80 % rated V R applied See note () D 0 20 30 40 50 t rr (ns) 30 20 25 90 80 25 70 60 50 400 500 600 700 800 900 0 I F(V) - verage Forward urrent () di F /dt (/μs) Fig. 5 - Maximum llowable ase Temperature vs. verage Forward urrent Fig. 7 - Typical Reverse Recovery Time vs. di F /dt 80 2000 verage Power Loss (W) 60 40 20 80 60 40 20 D RMS limit D = 0.0 D = 0.05 D = 0. D = 0.20 D = 0.50 Q rr (n) 800 600 400 200 0 800 600 25 25 0 0 20 30 40 50 60 70 80 90 I F(V) -verage Forward urrent () 400 400 500 600 700 800 900 0 di F /dt (/μs) Fig. 6 - Forward Power Loss haracteristics Note () Formula used: T = T J - (P d + P drev ) x R thj ; Pd = forward power loss = I F(V) x V FM at (I F(V) /D) (see Fig.5) P drev = inverse power loss = V R x I R ( - D); I R at V R = rated V R Fig. 8 - Typical Stored harge vs. di F /dt Revision: 9-Jan-7 3 Document Number: 95929 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?90
40 30 25 I rec () 20 25 0 400 500 600 700 800 900 0 di F /dt (/μs) Fig. 9 - Typical Reverse urrent vs. di F /dt ORDERING INFORMTION TBLE Device code VS- E 4 P U 30 06 L H N3 2 3 4 5 6 7 8 9 - product 2 - ircuit configuration: E = single diode 3 - FRED Pt Gen 4 4 - P = TO-247 package 5 - Process type: U = ultrafast recovery 6 - urrent rating (30 = 30 ) 7 - Voltage rating (06 = 600 V) 8 - Package: L = long lead 9 - H = E-Q qualified - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER TUBE MINIMUM ORDER QUNTITY PKGING DESRIPTION 25 500 ntistatic plastic tube LINKS TO RELTED DOUMENTS Dimensions TO-247D 2L www.vishay.com/doc?95536 Part marking information TO-247D 2L www.vishay.com/doc?95648 Revision: 9-Jan-7 4 Document Number: 95929 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?90
DIMENSIONS in millimeters and inches TO-247D 2L Outline Dimensions (2) R/2 Q B (3) E S 2 Ø K M D B M (6) F P (Datum B) D2 F P 2 x R (2) D D (4), 2 3 D Thermal pad 4 (5) L L See view B (4) E 0.0 M D B M View - 2 x b2 2 x b 2 x e 0. M M Plating (b, b3) Base metal D D (c) c (b, b2) (4) Section -, D - D View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.3 0.83 0.209 E 5.29 5.87 0.602 0.625 3 2.2 2.59 0.087 0.2 E 3.46-0.53-2.50 2.49 0.059 0.098 e 5.46 BS 0.25 BS b 0.99.40 0.039 0.055 Ø K 0.254 0.0 b 0.99.35 0.039 0.053 L 9.8 20.32 0.780 0.800 b2.65 2.39 0.065 0.094 L 3.7 4.29 0.46 0.69 b3.65 2.34 0.065 0.092 Ø P 3.56 3.66 0.4 0.44 c 0.38 0.89 0.05 0.035 Ø P - 6.98-0.275 c 0.38 0.84 0.05 0.033 Q 5.3 5.69 0.209 0.224 D 9.7 20.70 0.776 0.85 3 R 4.52 5.49 0.78 0.26 D 3.08-0.55-4 S 5.5 BS 0.27 BS D2 0.5.35 0.020 0.053 Notes () Dimensioning and tolerancing per SME Y4.5M-994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (0.54") (7) Outline conforms to JEDE outline TO-247 with exception of dimension Q Revision: 20-pr-7 Document Number: 95536 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?90
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