FQA11N90 FQA11N90 900V N-Channel MOSFET September 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. Features 11.4A, 900V, R DS(on) = 0.96 Ω @ = 10 V Low gate charge ( typical 72 nc) Low Crss ( typical 30 pf) Fast switching 100% avalanche tested Improved dv/dt capability D! G "! " "! " G D S TO-3P FQA Series! S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter FQA11N90 Units S Drain-Source Voltage 900 V I D Drain Current - Continuous (T C = 25 C) 11.4 A - Continuous (T C = 100 C) 7.2 A I DM Drain Current - Pulsed (Note 1) 45.6 A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 1000 mj I AR Avalanche Current (Note 1) 11.4 A E AR Repetitive Avalanche Energy (Note 1) 30 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P D Power Dissipation (T C = 25 C) 300 W - Derate above 25 C 2.38 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Case -- 0.42 C/W R θcs Thermal Resistance, Case-to-Sink 0.24 -- C/W R θja Thermal Resistance, Junction-to-Ambient -- 40 C/W
Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 µa 900 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = 250 µa, Referenced to 25 C -- 1.0 -- V/ C I DSS = 900 V, = 0 V -- -- 10 µa Zero Gate Voltage Drain Current = 720 V, T C = 125 C -- -- 100 µa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V -- -- -100 na FQA11N90 On Characteristics (th) Gate Threshold Voltage =, I D = 250 µa 3.0 -- 5.0 V R DS(on) Static Drain-Source On-Resistance = 10 V, I D = 5.7 A -- 0.75 0.96 Ω g FS Forward Transconductance = 50 V, I D = 5.7 A (Note 4) -- 12 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 2700 3500 pf C oss Output Capacitance f = 1.0 MHz -- 260 340 pf C rss Reverse Transfer Capacitance -- 30 40 pf Switching Characteristics t d(on) Turn-On Delay Time -- 65 140 ns = 450 V, I D = 11.4 A, t r Turn-On Rise Time R G = 25 Ω -- 135 280 ns t d(off) Turn-Off Delay Time -- 165 340 ns t f Turn-Off Fall Time (Note 4, 5) -- 90 190 ns Q g Total Gate Charge = 720 V, I D = 11.4 A, -- 72 94 nc Q gs Gate-Source Charge = 10 V -- 16 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 35 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 11.4 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 45.6 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 11.4 A -- -- 1.4 V t rr Reverse Recovery Time = 0 V, I S = 11.4 A, -- 850 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 11.2 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 15mH, I AS = 11.4A, = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 11.4A, di/dt 200A/µs, BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
FQA11N90 Typical Characteristics I D, Drain Current [A] 10 1 10 0 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V I D, Drain Current [A] 10 1 10 0 150 o C 25 o C -55 o C 1. 250μs Pulse Test 2. T C = 25 1. = 50V 2. 250μs Pulse Test 10 0 10 1, Drain-Source Voltage [V] 2 4 6 8 10, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.0 R DS(ON) [Ω ], Drain-Source On-Resistance 1.6 1.2 0.8 = 20V = 10V Note : T J = 25 0.4 0 8 16 24 32 40 I D, Drain Current [A] I DR, Reverse Drain Current [A] 10 1 10 0 150 25 1. = 0V 2. 250μs Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 V SD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance [pf] 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 C iss C oss C rss 0 10 0 10 1, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 12 10 8 6 4 2 = 180V = 450V = 720V Note : I D = 11.4 A 0 0 10 20 30 40 50 60 70 80 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) 1.2 3.0 FQA11N90 2.5 BS, (Normalized) Drain-Source Breakdown Voltage 1.1 1.0 0.9 1. = 0 V 2. I D = 250 μa R DS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.5 1.0 0.5 1. = 10 V 2. I D = 5.7 A 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 2 Operation in This Area is Limited by R DS(on) 12 10 I D, Drain Current [A] 10 1 10 0 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 µs 100 µs 1 ms 10 ms DC 10-2 10 0 10 1 10 2 10 3, Drain-Source Voltage [V] I D, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Thermal Response 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse N otes : 1. Z θ JC (t) = 0.42 /W M ax. 2. D uty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10 0 10 1 t 1, Square W ave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve
FQA11N90 Gate Charge Test Circuit & Waveform 12V 200nF 50KΩ 300nF Same Type as DUT 10V Q g Q gs Q gd 3mA DUT Charge Resistive Switching Test Circuit & Waveforms R L 90% R G 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI 2 2 AS BS -------------------- BS - I D BS I AS R G I D (t) 10V DUT (t) t p t p Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms FQA11N90 DUT + _ I SD L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop
FQA11N90 Package Dimensions TO-3P 15.60 ±0.20 ø3.20 ±0.10 13.60 ±0.20 9.60 ±0.20 3.80 ±0.20 4.80 ±0.20 1.50 +0.15 0.05 13.90 ±0.20 12.76 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 16.50 ±0.30 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 +0.15 0.05
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