N-Channel -V (D-S) 75 C MOSFET SUDN-5L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) Q g (Typ). @ V GS = V.5.5 @ V GS =.5 V. 7.7 TO-5 D Drain Connected to Tab G G D S Order Number: Top View SUDN-5L SUDN-5L E (llead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 5 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V DS Gate-Source Voltage V GS V Continuous Drain Current (T J = 75 C) b T C = 5 C T C = 5 C.5.75 Pulsed Drain Current M 8. A Continuous Source Current (Diode Conduction) I S.5 Avalanche Current I AR 5. Repetitive Avalanche Energy (Duty Cycle %) L =. mh E AR.5 mj Maximum Power Dissipation T C = 5 C T A = 5 C P D.5 a W b Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t sec Junction-to-Ambient t t a Steady State 5 R thja 8 C/W Junction-to-Case R thjc. 7.5 Notes a. Surface Mounted on x FR Board. b. See SOA curve for voltage derating. S 5 Rev. B, -Dec-
SUDN-5L SPECIFICATIONS (T J = 5 C UNLESS OTHERWISE NOTED) Static Parameter Symbol Test Condition Min Typ a Max Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, = 5 A Gate Threshold Voltage V GS(th) V DS = V GS, = 5 A.. V Gate-Body Leakage I GSS V DS = V, V GS = V na V DS = V, V GS = V Zero Gate Voltage Drain Current SS V DS = V, V GS = V, T J = 5 C 5 A V DS = V, V GS = V, T J = 75 C 5 On-State Drain Current b (on) V DS = 5 V, V GS = V 8. A V GS = V, = A.. V GS = V, = A, T J = 5 C.5 Drain-Source On-State Resistance b r DS(on) V GS = V, = A, T J = 75 C.5 V GS =.5 V, =. A.8.5 Forward Transconductance b g fs V DS = 5 V, = A 8.5 S Dynamic a Input Capacitance C iss Output Capacitance C oss V GS = V, V DS = 5 V, F = MHz pf Reverse Transfer Capacitance C rss 7 Total Gate Charge c Q g.7. Gate-Source Charge c Q gs V DS = 5 V, V GS = 5 V, =.5 A. nc Gate-Drain Charge c Q gd DS, GS, D.7 Turn-On Delay Time c t d(on) 7 Rise Time c t r V DD = 5 V, R L = 7.5 8 Turn-Off Delay Time c t d(off).5 A, V GEN = V, R g =.5 8 Fall Time c t f ns Source-Drain Diode Ratings and Characteristic (T C = 5 C) Pulsed Current I SM 8. A Diode Forward Voltage b V SD I F =.5 A, V GS = V.. V Source-Drain Reverse Recovery Time t rr I F =.5 A, di/dt = A/ s 5 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width s, duty cycle %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S 5 Rev. B, -Dec-
SUDN-5L TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) 5 Output Characteristics 5 Transfer Characteristics T C = 55 C V GS = thru 5 V 5 C Drain Current (A) V Drain Current (A) 5 C, V 8 5 V GS Gate-to-Source Voltage (V) 5 Transconductance. On-Resistance vs. Drain Current g fs Transconductance (S) C Capacitance (pf) T C = 55 C 5 C 5 C 5 5 5 5 5 Capacitance C iss C oss C rss Gate-to-Source Voltage (V) rds(on) On-Resistance ( ) V GS.5..5..5. 5 8 V GS =.5 V V DS = 5 V =.5 A Gate Charge V GS = V 8 5 Q g Total Gate Charge (nc) S 5 Rev. B, -Dec-
SUDN-5L TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) r DS(on) On-Resiistance (Normalized).5..5..5 On-Resistance vs. Junction Temperature V GS = V = A Source Current (A) I S Source-Drain Diode Forward Voltage T J = 75 C T J = 5 C. 5 5 5 5 75 5 5 75 T J Junction Temperature ( C) THERMAL RATINGS....8.. V SD Source-to-Drain Voltage (V) Maximum Avalanche Drain Current vs. Case Temperature 8 Safe Operating Area s 5 5 75 5 5 75 T C Case Temperature ( C) *Limited by r DS(on) T C = 5 C Single Pulse Normalized Thermal Transient Impedance, Junction-to-Case s ms ms ms s, dc.. *V GS minimum V GS at which r DS(on) is specified Duty Cycle =.5 Normalized Effective Transient Thermal Impedance.....5 Single Pulse. 5 Square Wave Pulse Duration (sec) maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?75. S 5 Rev. B, -Dec-
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