Sharp NC9360 2.0 Megapixel CCD Imager Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor technology, please call Sales at Chipworks. 3685 Richmond Road, Suite 500, Ottawa, ON K2H 5B7, Canada Tel: 613.829.0414 Fax: 613.829.0515 www.chipworks.com
Process Review Table of Contents 1 Overview 1.1 List of Figures 1.2 List of Tables 1.3 Company Profile 1.4 Introduction 1.5 Device Summary 1.6 Process Summary 2 Device Overview 2.1 Camera Assembly 2.2 CCD Die 2.3 Die Features 3 Process Analysis 3.1 General Device Structure 3.2 Bond Pads 3.3 Dielectrics 3.4 Metallization 3.5 Vias and Contacts 3.6 Transistors and Poly 3.7 Isolation 3.8 Wells and Substrates 4 Pixel Analysis 4.1 Plan-View Analysis 4.2 Cross-Sectional Analysis (Parallel to Vertical CCD) 4.3 Cross-Sectional Analysis (Parallel to Horizontal CCD) 5 Critical Dimensions 5.1 Horizontal Dimensions 5.2 Vertical Dimensions About Chipworks
Overview 1-1 1 Overview 1.1 List of Figures 2 Device Overview 2.1.1 Sharp TM200 Camera Phone Front 2.1.2 Sharp TM200 Camera Phone Back 2.1.3 Camera Assembly Plan-View 2.1.4 Camera Assembly Side-View 2.1.5 Camera Assembly X-Ray Plan-View 2.1.6 Camera Assembly X-Ray Side-View 2.2.1 CCD Die and LRS5735 Control Chip 2.2.2 Die Photograph 2.2.3 Die Markings 2.3.1 Die Corner 1 2.3.2 Die Corner 2 2.3.3 Die Corner 3 2.3.4 Die Corner 4 2.3.5 Test Structure A 2.3.6 Test Structure B 2.3.7 Test Structure C 2.3.8 Test Structure D 2.3.9 Test Structure E 2.3.10 Test Structure F 2.3.11 Minimum Pitch Bond Pads 2.3.12 RGB Color Filters and Lenses 2.3.13 Output Amplifier 3 Process Analysis 3.1.1 General Structure of NC9360 3.1.2 Die Edge 3.1.3 Die Seal 3.2.1 Bond Pad Right Side 3.3.1 Silicon Nitride Passivation 3.3.2 Intermetal Dielectric 3.3.3 Pre-Metal Dielectric 3.4.1 Minimum Pitch Metal 2 3.4.2 End of Metal 2 Line 3.4.3 Edge of Active Pixel Array
Overview 1-2 3.4.4 Minimum Observed Metal 1 Pitch 3.4.5 Metal 1 Composition 3.5.1 Via 1 3.5.2 Contact to Poly and Diffusion 3.5.3 Contact to Poly 3.5.4 Minimum Pitch Contacts 3.6.1 Transfer Transistor Plan-View 3.6.2 Minimum Gate Length NMOS Transistor 3.6.3 Detail of Minimum Gate Length NMOS Transistor 3.6.4 Minimum Pitch Poly 3.7.1 Poly Over FOX 3.8.1 Well Structure Beneath Pixel Array SCM 3.8.2 SRP Peripheral N-Buried Layer 3.8.3 SRP Peripheral P-Well 3.8.4 SRP CCD Array P-Well 4 Pixel Analysis 4.1.1 Color Filters and Upper Lenses 4.1.2 Silicon Nitride Lower Lens 4.1.3 Metal 1 Light Shield 4.1.4 Polysilicon Control Lines 4.1.5 SCM of N-Charge Transfer Channel 4.1.6 SCM of Buried Photocathode 4.2.1 CCD Array at Poly Plane of Cross-Sectioning 4.2.2 CCD Pixels Red and Green Color Filters 4.2.3 CCD Pixels Green and Blue Color Filters 4.2.4 CCD Pixels Vertical CCD 4.2.5 SCM of P-Well and N-Epi 4.2.6 SCM of Photocathode 4.2.7 Photocathode without ARC 4.2.8 Photocathode with ARC 4.2.9 SCM of Transfer Channel 4.3.1 CCD Pixels 4.3.2 Detail of Aperture and Nitride ARC
Overview 1-3 1.2 List of Tables 1.5.1 Device Summary 1.6.1 Process Summary 3.3.1 Dielectric Thicknesses 3.4.1 Metallization Vertical Dimensions 3.4.2 Metallization Horizontal Dimensions 3.5.1 Via and Contact Dimensions 3.6.1 Transistor and Polycide Dimensions 4.1.1 Pixel Element Sizes 4.2.1 Layer Thicknesses Center of Pixel Aperture
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