Figure 1. Low Voltage Current Sense Amplifier Utilizing Nanopower Op-Amp and Low-Threshold P-Channel MOSFET

Similar documents
Table 1. TS1100 and MAX9634 Data Sheet Specifications. TS1100 ±30 (typ) ±100 (typ) Gain Error (%) ±0.1% ±0.1%

TS1105/06/09 Current Sense Amplifier EVB User's Guide

TS3003 Demo Board FEATURES COMPONENT LIST ORDERING INFORMATION. TS3003 Demo Board TS3003DB

TS3004 Demo Board FEATURES COMPONENT LIST ORDERING INFORMATION. TS3004 Demo Board TS3004DB. 5V Supply Voltage FOUT/PWMOUT Output Period Range:

Si21xxx-yyy-GM SMIC 55NLL New Raw Wafer Suppliers

AN599. Si4010 ARIB STD T-93 TEST RESULTS (315 MHZ) 1. Introduction. 2. Relevant Measurements Limits DKPB434-BS Schematic and Layout

UG175: TS331x EVB User's Guide

AN255. REPLACING 622 MHZ VCSO DEVICES WITH THE Si55X VCXO. 1. Introduction. 2. Modulation Bandwidth. 3. Phase Noise and Jitter

Si4825-DEMO. Si4825 DEMO BOARD USER S GUIDE. 1. Features. Table 1. Si4825 Band Sequence Definition

AN656. U SING NEC BJT(NESG AND NESG250134) POWER AMPLIFIER WITH Si446X. 1. Introduction. 2. BJT Power Amplifier (PA) and Match Circuit

INPUT DIE V DDI V DD2 ISOLATION ISOLATION XMIT GND2. Si8710 Digital Isolator. Figure 1. Si8710 Digital Isolator Block Diagram

AN31. I NDUCTOR DESIGN FOR THE Si41XX SYNTHESIZER FAMILY. 1. Introduction. 2. Determining L EXT. 3. Implementing L EXT

Change of Substrate Vendor from SEMCO to KCC

IN1/XA C PAR IN2/XB. Figure 1. Equivalent Crystal Circuit

AN985: BLE112, BLE113 AND BLE121LR RANGE ANALYSIS

Table MHz TCXO Sources. AVX/Kyocera KT7050B KW33T

90 µa max supply current 9 µa shutdown current Operating Temperature Range: 40 to +85 C 5-pin SOT-23 package RoHS-compliant

AN862: Optimizing Jitter Performance in Next-Generation Internet Infrastructure Systems

Assembly Site Addition (UTL3)

TSM9634F. A 1µA, SOT23 Precision Current-Sense Amplifier DESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATION CIRCUIT

Optocoupler 8. Shield. Optical Receiver. Figure 1. Optocoupler Block Diagram

TSM6025. A +2.5V, Low-Power/Low-Dropout Precision Voltage Reference FEATURES DESCRIPTION APPLICATIONS TYPICAL APPLICATION CIRCUIT

When paired with a compliant TCXO or OCXO, the Si5328 fully meets the requirements set forth in G.8262/Y ( SyncE ), as shown in Table 1.

Normal Oscillator Behavior (Device A) Figure 1. Normal Oscillator Behavior (Device A) ft = f0 1 + TC1 T T0

TS A 0.65V/1µA Nanopower Voltage Detector with Dual Outputs DESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATION CIRCUIT

Figure 1. LDC Mode Operation Example

profile for maximum EMI Si50122-A5 does not support Solid State Drives (SSD) Wireless Access Point Home Gateway Digital Video Cameras REFOUT DIFF1

UG123: SiOCXO1-EVB Evaluation Board User's Guide

Low-Power Single/Dual-Supply Dual Comparator with Reference. A 5V, Low-Parts-Count, High-Accuracy Window Detector

AN1093: Achieving Low Jitter Using an Oscillator Reference with the Si Jitter Attenuators

AN0026.1: EFM32 and EFR32 Wireless SOC Series 1 Low Energy Timer

AN523. OVERLAY CONSIDERATIONS FOR THE Si114X SENSOR. 1. Introduction. 2. Typical Application

AN0026.0: EFM32 and EZR32 Wireless MCU Series 0 Low Energy Timer

Low-Power Single/Dual-Supply Quad Comparator with Reference FEATURES

Description. Benefits. Logic Control. Rev 2.1, May 2, 2008 Page 1 of 11

AN614 A SIMPLE ALTERNATIVE TO ANALOG ISOLATION AMPLIFIERS. 1. Introduction. Input. Output. Input. Output Amp. Amp. Modulator or Driver

AN959: DCO Applications with the Si5341/40

Figure 1. Typical System Block Diagram

WT11I DESIGN GUIDE. Monday, 28 November Version 1.1

AN933: EFR32 Minimal BOM

Si Data Short

Si Data Short

TS1105/06 Data Sheet. TS1105 and TS1106 Unidirectional and Bidirectional Current- Sense Amplifiers + Buffered Unipolar Output with Adjustable Bias

TS3300 FEATURES DESCRIPTION APPLICATIONS TYPICAL APPLICATION CIRCUIT VIN, VOUT, 3.5µA, High-Efficiency Boost + Output Load Switch

AN1104: Making Accurate PCIe Gen 4.0 Clock Jitter Measurements

Low Jitter and Skew 10 to 220 MHz Zero Delay Buffer (ZDB) Description. Benefits. Low Power and Low Jitter PLL. (Divider for -2 only) GND

The 500 Series Z-Wave Single Chip ADC. Date CET Initials Name Justification

AN114. Scope. Safety. Materials H AND SOLDERING TUTORIAL FOR FINE PITCH QFP DEVICES. Optional. Required. 5. Solder flux - liquid type in dispenser

TS1100. A 1µA, +2V to +27V SOT23 Precision Current-Sense Amplifier DESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATION CIRCUIT

AN427. EZRADIOPRO Si433X & Si443X RX LNA MATCHING. 1. Introduction. 2. Match Network Topology Three-Element Match Network

AN905 EXTERNAL REFERENCES: OPTIMIZING PERFORMANCE. 1. Introduction. Figure 1. Si5342 Block Diagram. Devices include: Si534x Si5380 Si539x

1.6V Nanopower Comparators with/without Internal References

Features + DATAIN + REFCLK RATESEL1 CLKOUT RESET/CAL. Si DATAOUT DATAIN LOS_LVL + RATESEL1 LOL LTR SLICE_LVL RESET/CAL

TS1109 Data Sheet. TS1109 Bidirectional Current-Sense Amplifier with Buffered Bipolar

TS V Nanopower Comparator with Internal Reference DESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATION CIRCUIT

Si52111-B3/B4 PCI-EXPRESS GEN 2 SINGLE OUTPUT CLOCK GENERATOR. Features. Applications. Description. compliant. 40 to 85 C

The Si86xxIsoLin reference design board contains three different analog isolation circuits with performance summarized in Table 1.

UG168: Si8284-EVB User's Guide

UG310: XBee3 Expansion Kit User's Guide

UG310: LTE-M Expansion Kit User's Guide

BGM13P22 Module Radio Board BRD4306A Reference Manual

Description. Benefits. Low Jitter PLL With Modulation Control. Input Decoder SSEL0 SSEL1. Figure 1. Block Diagram

Case study for Z-Wave usage in the presence of LTE. Date CET Initials Name Justification

Not Recommended for New Design. SL28PCIe16. EProClock PCI Express Gen 2 & Gen 3 Clock Generator. Features. Pin Configuration.

AN1005: EZR32 Layout Design Guide

package and pinout temperature range Test and measurement Storage FPGA/ASIC clock generation 17 k * 3

Si720x Switch/Latch Hall Effect Magnetic Position Sensor Data Sheet

Description. Benefits. Low Jitter PLL With Modulation Control. Input Decoder SSEL0 SSEL1. Figure 1. Block Diagram. Rev 2.6, August 1, 2010 Page 1 of 9

ATDD (analog tune and digital display) FM/AM/SW radio Worldwide FM band support from 64 to 109 MHz with 5 default sub-bands:

Table 1. Si443x vs. Si446x DC Characteristics. Specification Si443x Si446x. Ambient Temperature 40 to 85 C 40 to 85 C

AN1057: Hitless Switching using Si534x/8x Devices

ATDD (analog tune and digital display) FM/AM/SW radio Worldwide FM band support from 64 MHz to 109 MHz with 5 default sub-bands:

Si8751/52 Data Sheet. Isolated FET Driver with Pin Control or Diode Emulator Inputs

Si3402B-EVB. N ON-ISOLATED EVALUATION BOARD FOR THE Si3402B. 1. Description. 2. Si3402B Board Interface

S R EVISION D VOLTAGE- C ONTROLLED C RYSTAL O SCILLATOR ( V C X O ) 1 0 M H Z TO 1. 4 G H Z

Hardware Design Considerations

TSM1285. A 300ksps, Single-supply, Low-Power 12-Bit Serial-output ADC DESCRIPTION FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM

Si597 QUAD FREQUENCY VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR (VCXO) 10 TO 810 MHZ. Features. Applications. Description. Functional Block Diagram.

Default high or low output Precise timing (typical)

Si8751/52 Data Sheet. Isolated FET Driver with Pin Control or Diode Emulator Inputs

TS1003. THE ONLY 0.8V TO 5.5V, 0.6µA RAIL-TO-RAIL SINGLE OP AMP FEATURES DESCRIPTION APPLICATIONS TYPICAL APPLICATION CIRCUIT

Low Energy Timer. AN Application Note. Introduction

Table 1. WMCU Replacement Types. Min VDD Flash Size Max TX Power

3.2x5 mm packages. temperature range. Test and measurement Storage FPGA/ASIC clock generation. 17 k * 3

Pin Assignments VDD CLK- CLK+ (Top View)

Not Recommended for New Design. SL28PCIe25. EProClock PCI Express Gen 2 & Gen 3 Generator. Features. Block Diagram.

Table 1. Summary of Measured Results. Spec Par Parameter Condition Limit Measured Margin. 3.2 (1) TX Antenna Power +10 dbm dbm 0.

Si596 DUAL FREQUENCY VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR (VCXO) 10 TO 810 MHZ. Features. Applications. Description. Functional Block Diagram.

AN0002.0: EFM32 and EZR32 Wireless MCU Series 0 Hardware Design Considerations

Si595 R EVISION D VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR (VCXO) 10 TO 810 MHZ. Features. Applications. Description. Functional Block Diagram.

Ultra Series Crystal Oscillator Si540 Data Sheet

Ultra Series Crystal Oscillator Si562 Data Sheet

AN435. Si4032/4432 PA MATCHING. 1. Introduction Brief Overview of Matching Procedure Summary of Matching Network Component Values

AN901: Design Guide for Isolated DC/DC using the Si884xx/886xx

AN973: Design Guide for Si8281/83 Isolated DC-DC with Internal Switch

Si8410/20/21 (5 kv) Si8422/23 (2.5 & 5 kv) Data Sheet

Reference Manual BRD4502C (Rev. A00)

Si53360/61/62/65 Data Sheet

Si3402BISO-EVB. ISOLATED EVALUATION BOARD FOR THE Si3402B. 1. Description. 2. Planning for Successful Designs. 3. Si3402B Board Interface

Up to 2500 V RMS isolation 60-year life at rated working voltage Precise timing (typical)

Transcription:

SUB-1 V CURRENT SENSING WITH THE TS1001, A 0.8V, 0.6µA OP-AMP 1. Introduction AN833 Current-sense amplifiers can monitor battery or solar cell currents, and are useful to estimate power capacity and remaining life. However, if the battery or solar source is a single cell, it s difficult to find a low voltage solution that works below 1V and draws just microamps. A new class of nanopower analog ICs, namely the TS1001 0.8 V/ 0.6 µa op amp, makes a sub-1 V supply current sense amplifier shown in Figure 1 possible. This discrete circuit operates from as low as 0.8 V and draws 860 na at no load while providing a 0 500 mv output for measured currents of 0 100 ma, though the scale can be adjusted by changing the values of a few resistors. With its extremely low power, the circuit can simply remain always on, providing a continuously monitored, averaged indication of current which can subsequently be read periodically by a microcontroller, without causing too much current drain in the battery. 2. Overview The circuit can be used to estimate the impedance of a small coin-cell type alkaline battery to determine its condition, its ability to source power, and estimate its remaining life. Measuring the battery voltage (without knowing the load) generally provides only a crude estimate, and performing pulse tests as recommended by some battery manufacturers can be disruptive to the circuit the battery is powering. Figure 1. Low Voltage Current Sense Amplifier Utilizing Nanopower Op-Amp and Low-Threshold P-Channel MOSFET The TS1001 is configured to servo P-channel MOSFET Q1 in a current source configuration, drawing current through R1 to compensate for the voltage drop across R2 caused by the current flow from IN to the load. R3 converts Q1 s drain current to a voltage and C1 provides filtering. The filtering is critical in allowing the current sense amplifier to continuously provide an averaged current output, enabling the microcontroller to sleep for long periods and save power, waking only periodically to read this mean current level. Rev. 1.1 1/15 Copyright 2015 by Silicon Laboratories AN833

Figure 2. Measured V_iload vs. Input Current Table 1. Current Sense Amplifier Circuit Supply Current vs. Load Current Load Current Current Used by the Current Sense Amplifier 0 860 na 50 ma 48.1 µa Amplifier input offset voltages need to be considered carefully in this circuit. The TS1001 op amp is specified with ±3 mv maximum input offset voltage at 25 C, which corresponds to ±3 ma of error. Figure 2 shows an offset of approximately 2.5 ma. Another consideration is that Q1 exhibits drain-source leakage current of a few 10s of nanoamps at 25 C and can approach 1µA over the commercial temperature range. Since the current through Q1 is effectively controlled by the TS1001 s loop, any drain-source leakage from Q1 appears as a current floor and generates a corresponding minimum voltage output across R3 below which current cannot be measured until the op amp takes over at higher measured currents. Therefore, normal methods of removing the current sense amplifier input offset voltage by subtracting the zero-load voltage at V_iin will not work, since the offset voltage due to the op amp s Vos and the current floor from Q1 s drain-source leakage cannot be separated. 2 Rev. 1.1

Figure 3. Ultra-Low Supply Current Amplifier Circuit with Amplifier Offset Voltage Correction Figure 3 shows an alternative configuration which provides a means for calibrating out the amplifier offset voltage. The circuit is set up for measuring very low currents, in this case from three series-connected PIN solar cells. The circuit can be used as part of an energy harvesting system in a maximum-power-point-tracking (MPPT) scheme, where the microcontroller adjusts the loading of the cells to maximize V x I and yield the maximum available power. The circuit works in a similar way to Figure 1, but it has been scaled for a selectable 100 µa/500 µa full scale current where the full-scale sensed voltage across R2 has been decreased to 50 mv to improve efficiency. With this lower voltage, the ±3 mv specified input offset voltage of the TS1001 causes up to a 6% offset error, which may be unacceptable. This offset may be calibrated out using the principal of making two measurements of the same parameter at the two gain settings. The offset then can be found as: Microcontroller-based systems power budgets have dropped dramatically in recent years, enabling these systems to be powered from sources such as coin batteries and miniature solar cells. Analog circuits such as this micropower current-sense amplifier, which remain always on, draw very little power from the power source, and are becoming increasingly useful to save yet more system power by allowing the microcontroller to remain sleeping while the circuit stays awake monitoring and averaging battery parameters. For additional information, see the TS1001 Op Amp documentation. Rev. 1.1 3

DOCUMENT CHANGE LIST Revision 1.0 to Revision 1.1 Updated document title. 4 Rev. 1.1

Smart. Connected. Energy-Friendly Products www.silabs.com/products Quality www.silabs.com/quality Support and Community community.silabs.com Disclaimer Silicon Laboratories intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Laboratories products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Laboratories reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Silicon Laboratories shall have no liability for the consequences of use of the information supplied herein. This document does not imply or express copyright licenses granted hereunder to design or fabricate any integrated circuits. The products must not be used within any Life Support System without the specific written consent of Silicon Laboratories. A "Life Support System" is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Silicon Laboratories products are generally not intended for military applications. Silicon Laboratories products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons. Trademark Information Silicon Laboratories Inc., Silicon Laboratories, Silicon Labs, SiLabs and the Silicon Labs logo, CMEMS, EFM, EFM32, EFR, Energy Micro, Energy Micro logo and combinations thereof, "the world s most energy friendly microcontrollers", Ember, EZLink, EZMac, EZRadio, EZRadioPRO, DSPLL, ISOmodem, Precision32, ProSLIC, SiPHY, USBXpress and others are trademarks or registered trademarks of Silicon Laboratories Inc. ARM, CORTEX, Cortex-M3 and THUMB are trademarks or registered trademarks of ARM Holdings. Keil is a registered trademark of ARM Limited. All other products or brand names mentioned herein are trademarks of their respective holders. Silicon Laboratories Inc. 400 West Cesar Chavez Austin, TX 78701 USA http://www.silabs.com