DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 99 File under Discrete Semiconductors, SC4 99 Sep 8
FEATURES High power gain Gold metallization ensures excellent reliability SOT33 (S-mini) package. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT33 (S-mini) package. The uses the same crystal as the SOT3 version, BFR93A. handbook, columns 3 APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to GHz. PINNING PIN DESCRIPTION base emitter 3 collector Top view MBC87 Marking code: R. Fig. SOT33 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V I C collector current (DC) 3 ma P tot total power dissipation up to T s =93 C; note 3 mw h FE DC current gain I C = 3 ma; V CE =V 4 9 C re feedback capacitance I C = ; V CE = V; f = MHz;.6 pf T amb = C f T transition frequency I C = 3 ma; V CE = V; f = MHz 4 GHz G UM maximum unilateral power gain I C = 3 ma; V CE = 8 V; f = GHz; T amb = C I C = 3 ma; V CE = 8 V; f = GHz; T amb = C Note. T s is the temperature at the soldering point of the collector pin. 3 db 8 db F noise figure I C = ma; V CE = 8 V; f = GHz;. db Γ s = Γ opt T j junction temperature C 99 Sep 8
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITION MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V V EBO emitter-base voltage open collector V I C collector current (DC) 3 ma P tot total power dissipation up to T s =93 C; see Fig.; note 3 mw T stg storage temperature 6 + C T j junction temperature C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITION VALUE UNIT R th j-s thermal resistance from junction to up to T s =93 C; note 9 K/W soldering point Note to the Limiting values and Thermal characteristics. T s is the temperature at the soldering point of the collector pin. 4 MLB4 Ptot (mw) 3 T ( o s C) Fig. Power derating curve. 99 Sep 8 3
CHARACTERISTICS T j = C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector leakage current I E = ; V CB =V na h FE DC current gain I C = 3 ma; V CE = V 4 9 C c collector capacitance I E =i e = ; V CB = V; f = MHz.7 pf C e emitter capacitance I C =i c = ; V EB =. V;.3 pf f = MHz C re feedback capacitance I C = ; V CE = V; f = MHz.6 pf f T transition frequency I C = 3 ma; V CE =V; f = MHz 4 GHz G UM maximum unilateral power gain; note I C = 3 ma; V CE =8V; f = GHz; T amb = C I C = 3 ma; V CE =8V; f = GHz; T amb = C 3 db 8 db. db F noise figure I C = ma; V CE =8V; f = GHz; Γ s = Γ opt I C = ma; V CE =8V; f = GHz; Γ s = Γ opt. db Note. G UM is the maximum unilateral power gain, assuming s is zero and G UM = s log------------------------------------------------------------ ( s ) ( s ) db. 99 Sep 8 4
handbook, halfpage MCD87 C re (pf) MBG3 h FE.8 8.6.4 4. 3 I C (ma) 4 8 6 V CB (V) V CE =V. I C = ; f = MHz. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. 6 MBG4 f T (GHz) 4 I C (ma) V CE = V; f = MHz; T amb = C. Fig. Transition frequency as a function of collector current; typical values. 99 Sep 8
3 MBG 3 MBG gain (db) gain (db) MSG G UM MSG G UM I C (ma) 3 I C (ma) 3 V CE = 8 V; f = MHz. V CE = 8 V; f = GHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage gain (db) G UM 4 MBG handbook, halfpage gain (db) G UM 4 MGB7 3 MSG 3 MSG G max G max 3 4 f (MHz) 3 4 f (MHz) V CE = 8 V; I C = ma. V CE = 8 V; I C =3mA. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. 99 Sep 8 6
6 handbook, halfpage MGC9 6 handbook, halfpage MGC9 F (db) F (db) 4 f = GHz 4 I C = 3 ma GHz ma MHz ma I C (ma) 3 f (MHz) 4 V CE =8V. V CE =8V. Fig. Minimum noise figure as a function of collector current; typical values. Fig. Minimum noise figure as a function of collector current; typical values. 9 o. 3 o..8.6. F min =.4 db Γopt.4. o 8.. o. F = db F = 3 db 3 o. F = 4 db f = MHz; V CE = 8 V; I C = ma; Z o =Ω. 9 o MGC879. Fig. Common emitter noise figure circles; typical values. 99 Sep 8 7
9 o. 3 o..8.6 8 o. G max = 3.8 db Γms.. G = 3 db G = db G = db F min = db Γopt. F =. db F = 3 db o.4. F = 4 db 3 o. 9 o MGC88. f = GHz; V CE = 8 V; I C = ma; Z o =Ω. Fig.3 Common emitter noise figure circles; typical values. 9 o. 3 o..8.6. (4).4 8 o. (3) (). o. () (). () Γ opt ; F min = 3 db. () F = 3. db. (3) F = 4 db. (4) F = db. () Γ ms ;G max = 8. db. 3 o (6) G = 7 db. (7) G = 6 db. (8) G = db. f = GHz; V CE = 8 V; I C = ma; Z o =Ω. (6) (7) (8). 9 o MGC88. Fig.4 Common emitter noise figure circles; typical values. 99 Sep 8 8
9 o. 3 o..8.6. 3 GHz.4. o 8.. o 4 MHz. 3 o. 9 o MGC878. V CE = 8 V; I C = 3 ma; Z o =Ω. Fig. Common emitter input reflection coefficient (s ); typical values. 9 o 3 o 8 o 4 MHz 3 GHz 4 3 o 3 o 9 o MGC898 V CE = 8 V; I C = 3 ma. Fig.6 Common emitter forward transmission coefficient (s ); typical values. 99 Sep 8 9
9 o 3 o 3 GHz 8 o..4.3.. 4 MHz o 3 o 9 o MGC899 V CE = 8 V; I C = 3 ma. Fig.7 Common emitter reverse transmission coefficient (s ); typical values. 9 o. 3 o..8.6..4. 8 o.. o 4 MHz. 3 GHz 3 o. 9 o MGC877. V CE = 8 V; I C = 3 ma; Z o =Ω. Fig.8 Common emitter output reflection coefficient (s ); typical values. 99 Sep 8
PACKAGE OUTLINE..8 A.3. B X 3..... M B...8... max.4.3.6.3. M A detail X.3. MBC87 Dimensions in mm. Fig.9 SOT33. 99 Sep 8
DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 99 Sep 8