RFIC Design ELEN 351 Lecture 1: General Discussion

Similar documents
RFIC Design ELEN 376 Session 1

RFIC DESIGN ELEN 351 Session4

Designing Bipolar Transistor Radio Frequency Integrated Circuits

RFIC Design ELEN 351 Lecture 2: RFIC Architectures

ECEN 5014, Spring 2009 Special Topics: Active Microwave Circuits Zoya Popovic, University of Colorado, Boulder

RF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment

Fully integrated CMOS transmitter design considerations

CMY210. Demonstration Board Documentation / Applications Note (V1.0) Ultra linear General purpose up/down mixer 1. DESCRIPTION

RF2418 LOW CURRENT LNA/MIXER

VCC GND RF IN. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

Behzad Razavi, RF Microelectronics, Prentice Hall PTR, 1998

Overview: Trends and Implementation Challenges for Multi-Band/Wideband Communication

RF V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER

Gain and Return Loss vs Frequency. s22. Frequency (GHz)

SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver

i. At the start-up of oscillation there is an excess negative resistance (-R)

First Integrated Bipolar RF PA Family for Cordless Telephones

ABA GHz Broadband Silicon RFIC Amplifier. Application Note 1349

RF3375 GENERAL PURPOSE AMPLIFIER

RF2044A GENERAL PURPOSE AMPLIFIER

22. VLSI in Communications

Application Note No. 027

A GHz MONOLITHIC GILBERT CELL MIXER. Andrew Dearn and Liam Devlin* Introduction

Application Note 1360

RF2044 GENERAL PURPOSE AMPLIFIER

This article describes the design of a multiband,

Designing a 960 MHz CMOS LNA and Mixer using ADS. EE 5390 RFIC Design Michelle Montoya Alfredo Perez. April 15, 2004

SGA4586Z DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

DESIGN APPLICATION NOTE --- AN011 SXT-289 Balanced Amplifier Configuration

NOT FOR NEW DESIGNS SGA5386Z. Absolute Maximum Ratings MHz. Parameter Rating Unit. Typical Performance at Key Operating Frequencies

Practical RF Circuit Design for Modern Wireless Systems

= 35 ma (Typ.) Frequency (GHz)

DESIGN AND SIMULATION OF A GaAs HBT POWER AMPLIFIER FOR WIDEBAND CDMA WIRELESS SYSTEM

SGA2386ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 2800 MHz >10dB 97 C/W

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN

Study, Modeling and Characterization of Dual-Band LNA Amplifiers Receivers for Wireless Microwaves Communication Systems

SGA2463Z. Frequency (GHz) 18.0 dbm 1950MHz. 7.2 dbm 1950 MHz 255 C/W

Advanced RFIC Design ELEN359A, Lecture 3: Gilbert Cell Mixers. Instructor: Dr. Allen A Sweet

An Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain

RF2126. RoHS Compliant & Pb-Free Product Typical Applications 2.5GHz ISM Band Applications

RF2162 3V 900MHz LINEAR AMPLIFIER

W-CDMA Upconverter and PA Driver with Power Control

Application Note No. 112

Course Project Topic: RF Down-Conversion Chain Due Dates: Mar. 24, Apr. 7 (Interim reports), Apr. 28 (Final report)

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RF2667. Typical Applications CDMA/FM Cellular Systems CDMA PCS Systems GSM/DCS Systems

RF/Microwave Circuits I. Introduction Fall 2003

Maxim > Design Support > Technical Documents > Application Notes > Wireless and RF > APP 3571

RF9986. Micro-Cell PCS Base Stations Portable Battery Powered Equipment

1 of 7 12/20/ :04 PM

Dr.-Ing. Ulrich L. Rohde

RF2317. Laser Diode Driver Return Channel Amplifier Base Stations. CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks

InGaP HBT MMIC Development

RF5187. RoHS Compliant & Pb-Free Product Typical Applications. 2.14GHz UMTS Systems. PCS Communication Systems Digital Communication Systems

SXA-3318B(Z) 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER. Product Description. Features. Applications

Frequency (GHz) 5000 MHz

A GSM Band Low-Power LNA 1. LNA Schematic

RFIC DESIGN ELEN 351 Lecture 7: Mixer Design

RF CMOS Power Amplifiers: Theory, Design and Implementation

Technical Article A DIRECT QUADRATURE MODULATOR IC FOR 0.9 TO 2.5 GHZ WIRELESS SYSTEMS

AM036MX-QG-R 1 WATT, 2 GHz POWER AMPLIFIER

Christopher J. Barnwell ECE Department U. N. Carolina at Charlotte Charlotte, NC, 28223, USA

RF2126 HIGH POWER LINEAR AMPLIFIER

RF3857 DUAL CHANNEL LNA WITH BYPASS MODE

Application Note No. 124

RF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER

SGA3363Z. = 35 ma (Typ.) Frequency (GHz) T L MHz >10dB 255 C/W

Design Methodology and Applications of SiGe BiCMOS Cascode Opamps with up to 37-GHz Unity Gain Bandwidth

Design of a Low Noise Amplifier using 0.18µm CMOS technology

Noise Reduction in Transistor Oscillators: Part 3 Noise Shifting Techniques. cross-coupled. over other topolo-

Smart Energy Solutions for the Wireless Home

DESIGN OF ZIGBEE RF FRONT END IC IN 2.4 GHz ISM BAND

SZM-5066Z 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER

Introduction to Surface Acoustic Wave (SAW) Devices

Texas A&M University Electrical Engineering Department ECEN 665. Laboratory #3: Analysis and Simulation of a CMOS LNA

The Design of E-band MMIC Amplifiers

Typical IP3, P1dB, Gain. 850 MHz 1960 MHz 2140 MHz 2450 MHz

6.776 High Speed Communication Circuits and Systems Lecture 14 Voltage Controlled Oscillators

ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications. Application Note 1371

Research and Design of Envelope Tracking Amplifier for WLAN g

High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF Enhancement Mode PHEMT

Application Note 5460

HMC478SC70 / 478SC70E v

RF Integrated Circuits

10W Ultra-Broadband Power Amplifier

Hot Topics and Cool Ideas in Scaled CMOS Analog Design

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Application Note 1285

Application Note No. 158

VCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

Application Note 5038

An E-band Voltage Variable Attenuator Realised on a Low Cost 0.13 m PHEMT Process

SGA2363ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 5000 MHz >10dB

DESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS

Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology

Features. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma

Design of low-loss 60 GHz integrated antenna switch in 65 nm CMOS

Application of PC Vias to Configurable RF Circuits

Application Note 5057

High Power Two- Stage Class-AB/J Power Amplifier with High Gain and

Transcription:

RFIC Design ELEN 351 Lecture 1: General Discussion Instructor: Dr. Allen Sweet Copy right 2003, ELEN351 1

General Information Instructor: Dr. Allen Sweet Email: allensweet@aol.com Home work/project submissions: Place all schematics, graphics, and layouts in a power point or ms word file and email to instructor. Hard copy is also acceptable. Grade: Based on homework, midterm, and project. Reference books: See handout list for suggestions. Copy right 2003, ELEN351 2

Recommended General Software Ms Word Ms Power Point Snagit utility (demo at www.snagit.com) APPCAD (Available from Agilent) Copy right 2003, ELEN351 3

Simulator Options ADS by Agilent Ansoft Serenade (RF package is called Harmonica). Student version is available at www.ansoft.com/about/academics/sersv/ind ex.cfm Note: the student version is limited to only 25 nodes and 2 transistors. Genesys by Eagleware Golden Gate by Xpedian Copy right 2003, ELEN351 4

Layout tool Options ICEditor (demo is available at www.iceditors.com, however files cannot be saved) Mentor Graphics Cadence AutoCAD Fast CAD (demo is available at www.fastcad.com, ) Copy right 2003, ELEN351 5

Course Outline General RF/wireless concepts, simulators, simple design example. Receiver/Transmitter architectural options Layout techniques PA Design LNA Design Mixer Design VCO Design Battery issues and tradeoffs, economics of RFICs Technology comparison Copy right 2003, ELEN351 6

What is an RFIC? Any integrated circuit for used in the frequency range: 100 MHz to 6 GHz. Generally RFIC s contain the analog front end of a radio transceiver, or some part of it. RFIC s can be the simplest SP1T switch, up to the whole front end of a radio transceiver. RFIC s are fabricated in a number of technologies: Si Bipolar, Si CMOS, GaAs HBT, GaAs MESFET/HEMT, and SiGe HBT are today s leading technologies. Copy right 2003, ELEN351 7

Typical Applications for RFICs Cellular / PCS phones Cellular / PCS infrastructure WLANS GPS BlueTooth Wireless PDAs Mobile Communications Copy right 2003, ELEN351 8

Basic Radio Link Copy right 2003, ELEN351 9

Path Loss Defines the Received RF Signal Level (In db s) Signal to Noise ratio Copy right 2003, ELEN351 10

Shannon s law gives Maximum Data Rate in an RF Channel Rmax = BW LOG2( 1 + S/N), where BW is the RF channel s bandwidth in MHz and Rmax if the Maximum possible data rate for this channel in MBits per second. All practical MOD- DEMOD systems can only approach Shannon s limit. Radio Spectrum is a precious commodity! It must be used wisely, to handle the growing amount of wireless information flow. Copy right 2003, ELEN351 11

Multiple Access Techniques Conserve Valuable Spectrum Frequency Division Multiple Access (FDMA) Time Division Multiple Access (TDMA) Code Division Multiple Access (CDMA) Copy right 2003, ELEN351 12

FDMA Copy right 2003, ELEN351 13

TDMA Data Packets Copy right 2003, ELEN351 14

CDMA Copy right 2003, ELEN351 15

Block Diagram of a CDMA System Note: Spreading and De Spreading codes are identical Copy right 2003, ELEN351 16

Two Port S Parameters Copy right 2003, ELEN351 17

Types of Device Models S Parameter: Limited to small signal gain and match analysis only. Equivalent Circuit: Same limitations as the S Parameter Model, except it is scalable with area. Load Pull Impedance: For PA design, limited in usefulness to output circuit design only. Large Signal Model: No limitations, this is the most useful class of models.with these models, ALL measurable parameters can be simulated. Copy right 2003, ELEN351 18

Types of Large Signal Models GaAs HBT: Gummel-Poon, and VBIC GaAs MESFET: Curtice, TOM, Materka, Statz, Tajima, GaAs HEMT: EE_HEMT Si Bipolar: Gummel-Poon CMOS: Many Copy right 2003, ELEN351 19

The Impedance Smith Chart LINES OF CONSTANT REACTANCE INDUCTIVE SHORT (RESISTIVE AXIS) OPEN Z0 POINT CAPACITIVE CIRCLES OF CONSTANT RESISTANCE Copy right 2003, ELEN351 20

Impedance locus of a 10 ohm Resistor in series with a 5 nh coil Copy right 2003, ELEN351 21

Impedance locus of a 10 ohm Resistor in series with a 5 pf cap Copy right 2003, ELEN351 22

Impedance locus of an ideal 50 Ohm transmission line, Grounded at one end Copy right 2003, ELEN351 23

RFIC Design Process Steps Specifications Identify Topology options (literature search) Choose a Foundry Obtain Foundry s Device Models and Design Rules Initial Simulations Choose final Topology Stability Analysis (Amplifiers only) Temperature Analysis Copy right 2003, ELEN351 24

RFIC Design Process Steps, Continued Initial Layout Include all Layout Parasitic elements in Topology Minimize Layout Area, Preserving Performance The Art of the Trade Off Complete Final Layout Create Test Cells for Critical Circuit Blocks DRC at the Foundry Assemble the Reticle, Tapeout Mask Making, Wafer Fabrication Copy right 2003, ELEN351 25

Homework Assignment #1: Simulate the following Amplifier Copy right 2003, ELEN351 26

BIAS CHOKE Circuit Details: FEEDBACK RESISTOR INPUT BLOCKING CAP OUTPUT BLOCKING CAP TRANSISTOR AREA=3 FINGERS BASE BIAS STABILIZING RESISTOR Copy right 2003, ELEN351 27

Gummel Poon InGaP/GaAs HBT Device Model: 2x12 micron emitter finger Copy right 2003, ELEN351 28

Simulated Gain/Match/DC Conditions GAIN OUTPUT MATCH INPUT MATCH Copy right 2003, ELEN351 29

Smith Chart Display: Amplifier s Input and Output Impedances OUTPUT IMPEDANCE INPUT IMPEDANCE Copy right 2003, ELEN351 30

Simulated Noise Figure Copy right 2003, ELEN351 31

Simulated Stability Factor (K) Copy right 2003, ELEN351 32