NSSJ, NSVJ V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e PowerEdge devices to be driven directly from PMU s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable These Devices are Pb Free and are RoHS Compliant* VOLTS,. AMPS NPN LOW V CE(sat) TRANSISTOR BASE SC 89 CASE 46C STYLE COLLECTOR EMITTER MARKING DIAGRAM Collector AA M Base Emitter AA M = Specific Device Code = Date Code* = Pb Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NSSJTG NSVJTG SC 89 (Pb Free) SC 89 (Pb Free), / Tape & Reel, / Tape & Reel *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, May, Rev. Publication Order Number: NSSJ/D
NSSJ, NSVJ MAXIMUM RATINGS (T A = ) Rating Symbol Max Unit Collector-Emitter Voltage V CEO Vdc Collector-Base Voltage V CBO 4 Vdc Emitter-Base Voltage V EBO 6. Vdc Collector Current Continuous I C. A Collector Current Peak I CM. A Electrostatic Discharge ESD HBM Class B MM Class C THERMAL CHARACTERISTICS Total Device Dissipation T A = Derate above Thermal Resistance, Junction to Ambient Total Device Dissipation T A = Derate above Thermal Resistance, Junction to Ambient Characteristic Symbol Max Unit P D (Note ) R JA (Note ) P D (Note ) R JA (Note ) 55. 49.4 45 mw mw/ C C/W mw mw/ C Junction and Storage Temperature Range T J, T stg 55 to +5 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR 4 @ mm, oz. copper traces.. FR 4 @ 5 mm, oz. copper traces. C/W
NSSJ, NSVJ ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I C = madc, I B = ) Collector Base Breakdown Voltage (I C =. madc, I E = ) Emitter Base Breakdown Voltage (I E =. madc, I C = ) Collector Cutoff Current (V CB = Vdc, I E = ) Emitter Cutoff Current (V EB = 5. Vdc) ON CHARACTERISTICS DC Current Gain (Note ) (I C = ma, V CE =. V) (I C = ma, V CE =. V) (I C = 5 ma, V CE =. V) (I C =. A, V CE =. V) Collector Emitter Saturation Voltage (Note ) (I C = ma, I B =.5 ma) (I C =. A, I B =. A) (I C =.5 A, I B =.5 A) (I C =. A, I B =. A) Base Emitter Saturation Voltage (Note ) (I C =.5 A, I B = 5 ma) Base Emitter Turn on Voltage (Note ) (I C =.5 A, V CE =. V) Cutoff Frequency (I C = ma, V CE =. V, f = MHz) V (BR)CEO V (BR)CBO 4 V (BR)EBO 6. I CBO. I EBO. h FE 5 5 V CE(sat).5.4.5. V BE(sat). V BE(on).9 f T 5 Vdc Vdc Vdc Adc Adc V V V MHz Input Capacitance (V EB =.5 V, f =. MHz) Cibo 4 pf Output Capacitance (V CB = 4. V, f =. MHz) Cobo 6 pf. Pulsed Condition: Pulse Width = msec, Duty Cycle %. TYPICAL CHARACTERISTICS P D, POWER DISSIPATION (W).4.5..5..5..5 Note Note h FE, DC CURRENT GAIN 6 5 4 5 C V CE = V 4 6 8 4 6... T J, JUNCTION TEMPERATURE ( C) Figure. Power Derating Figure. DC Current Gain
NSSJ, NSVJ TYPICAL CHARACTERISTICS h FE, DC CURRENT GAIN 6 5 4.. 5 C. Figure. DC Current Gain V CE = 4 V V CE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)...... 5 C Figure 4. Collector Emitter Saturation Voltage I C /I B = V CE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V).... I C /I B =.. 5 C Figure 5. Collector Emitter Saturation Voltage V BE(sat), BASE EMITTER SATURATION VOLTAGE (V).4...8.6.4.. I C /I B = 5 C.. Figure 6. Base Emitter Saturation Voltage V BE(sat), BASE EMITTER SATURATION VOLTAGE (V).4...8.6.4.. I C /I B = 5. 5 C. Figure 7. Base Emitter Saturation Voltage V BE(on), BASE EMITTER VOLTAGE (V).6.4...8.6.4.. V CE = V. 5 C. Figure 8. Base Emitter Voltage 4
NSSJ, NSVJ TYPICAL CHARACTERISTICS 6 V CE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V). I C = A I C = A I C =.5 A I C =. A I C = 5 ma C ibo, INPUT CAPACITANCE (pf) 5 4 T J = f TEST = MHz..... 4 5 6 7 8 I B, BASE CURRENT (A) V EB, BASE EMITTER VOLTAGE (V) Figure 9. Saturation Region Figure. Input Capacitance C obo, OUTPUT CAPACITANCE (pf) 8 6 4 5 5 T J = f TEST = MHz 5 V CB, COLLECTOR BASE VOLTAGE (V) 5 f Tau, CURRENT GAIN BANDWIDTH PRODUCT 4 5 5 5 5. T J = f TEST = MHz V CE = V.. Figure. Output Capacitance Figure. Current Gain Bandwidth Product. T J = ms ms ms.5 ms Thermal Limit.. V CE, COLLECTOR EMITTER VOLTAGE (V) Figure. Safe Operating Area 5
NSSJ, NSVJ PACKAGE DIMENSIONS K A X B Y S SC 89 LEAD CASE 46C ISSUE C NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: MILLIMETERS. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 46C OBSOLETE, NEW STANDARD 46C. M G PL D PL.8 (.) M X C Y J N T SEATING PLANE MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.5.6.7.59.6.67 B.75.85.95..4.4 C.6.7.8.4.8. D..8..9.. G.5 BSC. BSC H.5 REF. REF J..5..4.6.8 K..4.5..6. L. REF.4 REF M _ _ N _ _ S.5.6.7.59.6.67 STYLE : PIN. BASE. EMITTER. COLLECTOR SOLDERING FOOTPRINT* H H L *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: 675 75 or 8 44 86 Toll Free USA/Canada Fax: 675 76 or 8 44 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 79 9 Japan Customer Focus Center Phone: 8 587 5 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSSJ/D