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FEATURES NEW MINIATURE M PACKAGE: Small transistor outline. X. X. mm Low profile /. mm package height Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: ft = GHz LOW NOISE FIGURE: =. db at GHz DESCRIPTION NEC's NPN SILICON TRANSISTOR NEC's NE67M transistor is designed for low noise, high gain, and low cost requirements. This high ft part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M" package is ideal for today's portable wireless applications. ELECTRICAL CHARACTERISTICS (TA = C) PART NUMBER EIAJ REGISTERED NUMBER PACKAGE OUTLINE NE67M OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M NE67M SC6 M SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ft in Bandwidth at VCE = V, IC = ma, f = GHz GHz 9.. VCE = V, IC = ma, f = GHz GHz 7.. Noise Figure at VCE = V, IC = ma, f = GHz, Zs = Zopt db.. VCE = V, IC = ma, f = GHz, Zs = Zopt db.. SE Insertion Power in at VCE = V, IC = ma, f = GHz db.. VCE = V, IC = ma, f = GHz db 6. 9. hfe Forward Current in at VCE = V, IC = ma, Note 7 ICBO Collector Cutoff Current at VCB = V, IE = µa. IEBO Emitter Cutoff Current at VEB = V, IC = µa. CRE Feedback Capacitance at VCB = V, IE =, f = MHz, Note pf.. Notes:. Electronic Industrial Association of Japan.. Pulsed measurement, pulse width µs, duty cycle %.. Capacitance is measured with emitter and case connected to the guard terminal of the bridge.. +. ñ..7... +. ñ.. +. ñ..±..7±.. +. ñ. W.. +. ñ.. ñ.. +. (Bottom View)... PIN CONNECTIONS. Emitter. Base. Collector California Eastern Laboratories

NE67M ABSOLUTE MAXIMUM RATINGS (TA = C) ORDERING IORMATION SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V. VCEO Collector to Emitter Voltage V. VEBO Emitter to Base Voltage V. IC Collector Current ma PT Total Power Dissipation mw 9 TJ Junction Temperature C TSTG Storage Temperature C -6 to + Notes:. Operation in excess of any one of these parameters may result in permanent damage.. With device mounted on. cm X. mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = C) Total Power Dissipation, Ptot (mw) 9 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass Epoxy PCB (. cm. mm (t) ) 7... Ambient Temperature, TA ( C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = V....6.7..9. Base to Emmiter Voltage, VBE (V) PART NUMBER QUANTITY NE67M-A NE67M-T-A Reverse Transfer Capacitance, Cre (pf) REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE.6..... f = MHz Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE µ A µ A IB : µ A step µ A µ A µ A IB = µ A Collector to Emmiter Voltage, VCE (V)

NE67M TYPICAL PERFORMANCE CURVES (TA = C) DC Current in, HFE Insertion Power in, Se (db) Maximum Available in, MAG(dB) Maximum Stable in, MSG(dB) Insertion Power in, Se (db) Maximum Available in, MAG(dB) Maximum Stable in, MSG(dB) DC CURRENT GAIN INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Frequency, f (GHz) VCE = V. VCE = V IC = ma. INSERTION POWER GAIN, MAG, MSG VCE = V f = GHz MSG MSG Se Se MAG MAG in Bandwidth Product, ft (GHz) Insertion Power in, Se (db) Maximum Available in, MAG(dB) Maximum Stable in, MSG(dB) Insertion Power in, Se (db) Maximum Available in, MAG(dB) Maximum Stable in, MSG(dB) 6 VCE = V f = GHz 6 GAIN BANDWIDTH PRODUCT INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG Se MAG Frequency, f (GHz) VCE = V IC = ma. INSERTION POWER GAIN, MAG, MSG VCE = V f = GHz MSG MAG Se

NE67M TYPICAL PERFORMANCE CURVES (TA = C) VCE = V f = GHz VCE = V f =. GHz VCE = V f = GHz 6 6 6 Associated in, (db) Associated in, (db) Associated in, (db) VCE = V f = GHz VCE = V f =. GHz VCE = V f = GHz 6 6 6 Associated in, (db) Associated in, (db) Associated in, (db)

NE67M TYPICAL SCATTERING PARAMETERS j -j j -j S Coordinates in Ohms Frequency in GHz VCE = V, IC = ma NE67M VCE = V, IC = ma Frequency S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db)..7 -..6.7. 76.9.6 -.9.9 9.9..6-6.7 9..6. 6..7 -.7. 7...7-77.7 6. 9.. 7..6 -.9.7.6.. -9..7.9.6.. -6.96.6.79..9-7.9.6..6..7-7.99..6.6. -. 9.9.6.7.9.7-7.6.6.7.7. -9..7.77.7.7. -..7... -.99 7..... -9.7.79..9. -. 7. 97.... -9.. 9... -6.6 6. 9.6.9..6-99...67.. -.7. 9...6. -6.9.9 7.9.. -6.9.69 6...9. -.9.99 6..6. -6.... 6..9 -.7.... -69..7 79.7. 6.. -.6.6... -7.9.7 76.6. 6..7 -.7.... 79.9.76 7..6 6.9.6-6.9.... 7.. 6..9.7.7 -.7..6..9 6...9..7. -7.6.6 7....7..6..7. -7..6 6...9 6..66 9..6.. -.7.6.6...9...9.. -.6..9..6...6. 9.. -... 6....6 7.7. 7.. -.6..9 Note:. in Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available in MSG = Maximum Stable in j S -j j -j +º +º -º +9º -9º +º S +º S -º

NE67M TYPICAL SCATTERING PARAMETERS j -j j -j S j -j Coordinates in Ohms Frequency in GHz VCE = V, IC = ma NE67M VCE = V, IC = ma Frequency S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db)..6 -.. 67.9...9 -...7.. -.... 7.7.9 -.7.7...76-6..9.7. 6.6. -...6..7-9..9.97.6 6..7-9.96..7..6-7.6 9.9..7 6..6-6....6. -.9.7...7. -9..7..7. -9.97.7 6.... -.7. 9... -99.97 7.9.6.9 9.. -7..7 9.6.9.9-7. 6.76 7.7.9.. -9..6.6.. -. 6... 7.. -6.7.66... -.. 9.9. 7.6.6-66.6.7 7... -.69.7 9.. 7.6. -7.6. 6.9.6. -9.6. 9.7...9-7..... -..7...6.7-7..9.7..9 -.... 9.6. -77.7.9...7-6.6. 7..6.. -.7.7...6-7.. 67.9... -9.. 9... 76.69. 6...7. -9.6. 7.96.. 66.... 9.. -..7 6.9....7.6. 9..6-6.9. 6.....6 6.7. 9.. -6.7.7.....6.9.7.6. -.9.6. 6.. 6...7..7. -.7.. Note:. in Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available in MSG = Maximum Stable in S j -j +9º +º +º +º +º S -º -9º S -º

NE67M TYPICAL SCATTERING PARAMETERS j -j j -j Coordinates in Ohms Frequency in GHz VCE = V, IC = ma NE67M VCE = V, IC = ma Frequency S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db)..7-6..9.. 7.9. -...6.. -67..7.9. 66..67 -.. 9.76.. -9..6.67. 6.. -6.. 7.77.. -6.6 6.96.. 9..6-6..6 6.9.. -.. 9.6. 9..9-7..7..6.7 -.6.7.6. 6.. -7...77.7.7-9....6 6.9.6 -..9.7..7 -.7 9.7 97.6.6 6.. -..9..9.7-9.66. 9..7 6.. -7..9...6 -. 7.6 9.9.7 6.97. -9..9.6..7-9.66 6... 6.9.7-96.7....7-6..6..9 6.6. -.. 6.7.6.7-69..9.. 6.7. -6..7.7..7-7.6.9 79.67. 6.7. -9.9....6-7.7.9 77.7. 6.. -..9.6..6 77.9. 7.97. 6.. -...7.. 69.69.7 6.6. 6.. -.. 9.76.. 6..9 6.. 6.9. -.....6......6 -.. 7...6.7.9.. 6.. -.6. 6.7...7.76 7.... -7.9. 6... 7..6.6... -.6.. 6...76. 9.7... -7..9.9 Note:. in Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available in MSG = Maximum Stable in j S -j S j -j Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 9 Patrick Henry Drive Santa Clara, CA 9-7 () 9- Telex -69 FAX () 9-79 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://www.cel.com 6// +º +º -º +9º -9º +º S +º S -º

Subject: Compliance with EU Directives 9 Patrick Henry Drive Santa Clara, CA 9-7 Telephone: () 99- Facsimile: () 9-79 CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive /9/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive //EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Concentration Limit per RoHS (values are not yet fixed) < PPM Concentration contained in CEL devices -A -AZ Not Detected (*) Mercury < PPM Not Detected Cadmium < PPM Not Detected Hexavalent Chromium < PPM Not Detected PBB < PPM Not Detected PBDE < PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.