Optocoupler, Photodarlington Output, High Gain, With Base Connection Features Very high current transfer ratio, 500 % Min. High isolation resistance, 0 Ω Typical Standard plastic DIP package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C NC 2 3 6 5 4 B C E Agency Approvals UL577, File No. E52744 System Code H or J, Double Protection i79005 e3 Pb Pb-free DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option BSI IEC60950 IEC60065 Description The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Order Information Part Remarks 4N32 CTR > 500 %, DIP-6 4N33 CTR > 500 %, DIP-6 4N32-X007 CTR > 500 %, SMD-6 (option 7) 4N32-X009 CTR > 500 %, SMD-6 (option 9) 4N33-X007 CTR > 500 %, SMD-6 (option 7) 4N33-X009 CTR > 500 %, SMD-6 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Symbol Value Unit Peak reverse voltage V R 3.0 V Forward continuous current I F 60 ma Power dissipation P diss 00 mw Derate linearly from 55 C.33 mw/ C
Output Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BV CEO 30 V Emitter-base breakdown voltage BV EBO 8.0 V Collector-base breakdown voltage BV CBO 50 V Emitter-collector breakdown voltage BV ECO 5.0 V Collector (load) current I C 25 ma Power dissipation P diss 50 mw Derate linearly 2.0 mw/ C Coupler Parameter Test condition Symbol Value Unit Total dissipation P tot 250 mw Derate linearly 3.3 mw/ Isolation test voltage (between emitter and detector, Standard Climate: 23 C/ 50 %RH, \\ndin 500 4) V ISO 5300 V RMS Leakage Path 7.0 mm min. Air Path 7.0 mm min. Isolation Resistance V IO = 500 V, T amb = 25 C R IO 0 2 Ω V IO = 500 V, T amb = 00 C R IO 0 Ω Storange temperature T amb - 55 to + 50 C Operating temperature T stg - 55 to + 00 C Lead soldering time at 260 C 0 s Electrical Characteristics T amb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Forward voltage I F = 50 ma V F.25.5 V Reverse current V R = 3.0 V I R 0. 00 µ Capacitance V R = 0 V C O 25 pf 2
Output ) Indicates JEDEC registered values 4N32/ 4N33 Collector-emitter breakdown I C = 00 µa, I F = 0 BV CEO 30 V voltage ) Collector-base breakdown I C = 00 µa, I F = 0 BV CBO 50 V voltage ) Emitter-base breakdown I C = 00 µa, I F = 0 BV EBO 8.0 V voltage ) Emitter-collector breakdown I C = 00 µa, I F = 0 BV ECO 5.0 0 V voltage ) Collector-emitter leakage current V CE = 0 V, I F = 0 I CEO.0 00 na I C = 0.5 ma, V CE = 5.0 V h FE 3 Coupler Colector emitter saturation V CEsat.0 V voltage Coupling capacitance.5 pf Current Transfer Ratio Current Transfer Ratio V CE = 0 V, I F = 0 ma, CTR 500 % Switching Characteristics Turn on time V CC = 0 V, I C = 50 ma t on 5.0 µs Turn off time I F = 200 ma, R L = 80 Ω t off 00 µs Typical Characteristics (Tamb = 25 C unless otherwise specified) NCTRce - Normalized CTRce.2.0 0.8 0.6 0.4 Normalized to: Vce=5V IF=0mA Ta = 25 C Vce=5V 0.2 Vce =V 0.0. 0 00 000 NIce - Normalized Ice 0..0.00. Normalized to: Ta = 25 C IF = 0 ma Vce=5V 0 Vce=5V Vce=V 00 i4n32-33_02 i4n32-33_03 Figure. Normalized Non-saturated and Saturated CTR CE vs. LED Current Figure 2. Normalized Non-Saturated and Saturated Collector- Emitter Current vs. LED Current 3
NIcb - Normalized Icb i4n32-33_04 0..0 Normalized to: Ta = 25 C Vcb = 3.5 V IF = 0 ma.00. 0 00 tphl - High/Low Propagation delay - µs i4n32-33_07 20 5 0 5 0 00Ω kω 0 5 0 5 20 Ta=25 C Vcc = 5 V Vth =.5 V Figure 3. Normalized Collector-Base Photocurrent vs. LED Current Figure 6. High to low Propagation Delay vs. Collector Load Resistance and LED Current HFE - Forward Transfer Gain 0000 8000 6000 4000 2000 Ta=25 C Vce = V Vce = 5 V 0.0. 0 00 IF VO td tr tphl tplh VTH=.5 V ts tf IF VCC RL VO Ib - Base Current - µa i4n32-33_05 i4n32-33_08 Figure 4. Non-Saturated and Saturated HFE vs. Base Current Figure 7. Switching Waveform and Switching Schematic tplh - Low/High Propagation Delay - µs 80 60 40 20 Ta = 25 C, Vcc = 5V Vth =.5 V 220 Ωıˇ 470 Ω 00 Ω 0 0 5 0 5 20.0 kω i4n32-33_06 Figure 5. Low to High Propagation Delay vs. Collector Load Resistance and LED Current 4
Package Dimensions in Inches (mm) For 4N32/33... see DIL300-6 Package dimension in the Package Section. For products with an option designator (e.g. 4N32-X007 or 4N33-X009)... see DIP-6 Package dimensions in the Package Section. DIL300-6 Package Dimensions 4770 DIP-6 Package Dimensions 3 2 pin one ID.248 (6.30).256 (6.50) 4 5 6 ISO Method A.039 (.00) Min..335 (8.50).343 (8.70).048 (0.45).022 (0.55).30 (3.30).50 (3.8).300 (7.62) typ. 4 typ..08 (0.45).022 (0.55).03 (0.80) min..03 (0.80).035 (0.90).00 (2.54) typ. 3 9 8.00 (.25) typ..300.347 (7.62 8.8).4 (2.90).30 (3.0) i78004 5
Option 7 Option 9.300 (7.62) TYP..375 (9.53).395 (0.03).028 (0.7) MIN..35 (8.0) MIN..33 (8.4) MIN..406 (0.3) MAX..80 (4.6).60 (4.).0040 (.02).0098 (.249).300 (7.62) ref..020 (.5).040 (.02).35 (8.00) min..02 (.30) typ. 5 max. 8494 6
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