GaN Brings About a New Way of Thinking to Power Conversion Stephen Colino Efficient Power Conversion Corporation 1
GaN Wide Bandgap Hetero Junction Distance electrons need to travel Si Conductivity GaN Wide Bandgap Shorter distance required to support voltage Hetero Junction Forms 2 Dimensional Electron Gas (2DEG) Electrons not bound to any particular atom Higher conductivity GaN is still far from theoretical limits EPC The Leader in GaN Technology www.epc-co.com 2
EPC The Leader in GaN Technology www.epc-co.com 3 egan FET Structure on Silicon - AlGaN Electron + Generating Layer Dielectric S G - - - - - - - - - - - - - - - - - - - GaN D Two Dimensional Electron Gas (2DEG) Aluminum Nitride Isolation Layer Si For a given R DS(on) and V DS capability Smaller device Lower Capacitance Zero Q RR Lower Inductance
GaN Developing Quickly Efficiency (%) 92 91 90 89 88 87 86 85 84 83 82 81 80 79 GaN Circa 2012 GaN Circa 2010 2 6 10 14 18 22 26 30 34 38 42 46 50 Output Current (A) GaN Circa 2015 GaN Circa 2014 V IN =12 V, V OUT =1.2 V, f sw =1 MHz
GaN Versus Silicon Parameter Conditions EPC2045 BSC070N10NS5 R DS(on) (typ) V GS = 5 V*, T J = 25 C 5.6 mω 6 mω Q G (typ) V GS = 5 V, V DS = 50 V, I D = 16 A* 5.2 nc 30 nc Q GD (typ) V DS = 50 V 1.1 nc 6 nc Q SW (typ) V GS = 5 V, V DS = 50 V, I D = 10 A* 1.6 nc 11 nc Q OSS (typ) V DS = 50 V 21 nc 30 nc E OSS (typ) V DS = 50 V 0.4 µj 1.45 µj** Q RR (typ) V DS = 50 V, I F = 20 A, di F /dt = 100 A/µs 0 nc 89 nc L CS (estimated) 0.1 ph 0.5 ph R G (typ) 0.6 Ω 1 Ω R DS(on) x Q SW Switching FOM 8.96 mω nc 70.4 mω nc R DS(on) x (Q OSS + Q RR ) Rectifier FOM 118 mω nc 624 mω nc R Ө(JC) Thermal impedance to top 1.4 C/W 20 C/W Area 3.75 mm 2 31.7 mm 2 *V GS = 10 V, I D = 40 A for BSC070N10NS5 **Estimated by taking second integral of C OSS versus C DS curve EPC The Leader in GaN Technology www.epc-co.com 4
Wafer Level Packaging Single interface with PCB No wires or clips Active area Intimate with PCB for inductance cancelling RoHS 6 of 6 MSL-1 EPC The Leader in GaN Technology Company Confidential Information www.epc-co.com 7
What egan Technology Has Less Of L D C GD C DS C GS L CS Q RR R G 100 V egan FET 5.6 mω 80 V Si MOSFET 10.3 mω 10 V/ div 10 A 20 ns/ div Less parasitic capacitance and inductance Efficient at high frequency Less overshoot and ringing EPC The Leader in GaN Technology www.epc-co.com 8
WLP - Excellent Thermally Dual Sided Cooling Gap Filler Thermal interface (electrically isolating) Heatsink (200 PSI max)
What Does Fast, Low Loss Switching Buy? EPC The Leader in GaN Technology www.epc-co.com 10
Extreme Output Power @ High Frequency Sensor Sensor leads Kapton Heat-sink RTV adhesive EPC The Leader in GaN Technology www.epc-co.com 11
EPC The Leader in GaN Technology www.epc-co.com Extreme Output Power @ High Frequency Steps indicate duration to reach thermal equilibrium 95 EPC2047 Duration Heatsink Test 140 V in 28 V out stepped to 34 A 60 93 55 91 50 Efficiency [%] 89 87 85 83 81 79 250kHz Eff 200 khz Eff 250kHz Loss 45 40 35 30 25 20 Total Power Loss [W] 77 200 khz Loss 15 75 10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Time [minutes]
Increase Bandwidth in Power Supplies for Base Stations PA with constant voltage acts as constant power dissipater GaN enables high bandwidth power supply 4 phase, 60 W 92% Power system efficiency 20 MHz, 7 db PAPR LTE envelope signal EPC The Leader in GaN Technology Company Confidential Information www.epc-co.com 13
Reduce Notebook and Tablet Size 3 mm x 1.5 mm half bridge 100 nh inductor Reduces board system height Reduces voltage regulator footprint 50 mm 2 x 1.2 mm high EPC The Leader in GaN Technology Company Confidential Information www.epc-co.com 14
Reduce Size and Cost of 48 V to 12 V 600 W Isolated 600 W Isolated 500 W Buck (or Boost) f 100 khz 200 khz 500 khz 1 MHz L 6.8 uh 3.3 uh 1 uh 0.68 uh I PP 13.2 A 13.6 A 18 A 13.2 A Inductor IHLP8787GZ-51 IHLP6767GZ-51 IHLP5050CE-01 IHLP3232DZ-01 Size (mm) 22 x 22.5 x 13 17 x 17.2 x 7 12.9 x 13.2 x 3.5 8.2 x 8.6 x 4 DCR (mω) 3.09 3.27 3.5 3.67 EPC The Leader in GaN Technology www.epc-co.com 15
Wireless Power Transfer 6.78 MHz and 13.56 MHz magnetic resonance Power into the body Power a desk 100 W + demonstrated EPC The Leader in GaN Technology www.epc-co.com 16
Find the Richness in Music 2.11 mm 400 W into 4 ohms 1.63 mm FFT from 20 Hz to 20 khz of a 1 khz signal at -60 dbr Where s the heatsink? Increased open loop linearity reduces magnitude of feedback EPC The Leader in GaN Technology www.epc-co.com 17
Increase Resolution of 3D Imaging 43 A, 75 V, 2.8 ns, Laser Driver IC LiDAR 3D imaging systems chase the speed of light (30 cm/ns (1 ft/ns)) Breaking distance is 150 m at 160 km/h Identify the object EPC The Leader in GaN Technology www.epc-co.com 18
Conclusions GaN provides fast, low loss switching Fast, low loss switching enables different ways to solve power conversion and deliver problems EPC The Leader in GaN Technology www.epc-co.com 19