Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance SMPS MOSFET PD - 95363 IRF3708PbF IRF3708SPbF IRF3708LPbF HEXFET Power MOSFET V DSS R DS(on) max I D 30V 12mΩ 62A l Very Low R DS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3708 D 2 Pak IRF3708S TO-262 IRF3708L Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ±12 V I D @ T C = 25 C Continuous Drain Current, V GS @ V 62 I D @ T C = 70 C Continuous Drain Current, V GS @ V 52 A I DM Pulsed Drain Current 248 P D @T C = 25 C Maximum Power Dissipationƒ 87 W P D @T C = 70 C Maximum Power Dissipationƒ 61 W Linear Derating Factor 0.58 W/ C T J, T STG Junction and Storage Temperature Range -55 to + 175 C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.73 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 R θja Junction-to-Ambient (PCB mount)* 40 * When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page www.irf.com 1 6//04
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.028 V/ C Reference to 25 C, I D = 1mA 8 12.0 V GS = V, I D = 15A ƒ R DS(on) Static Drain-to-Source On-Resistance 9.5 13.5 mω V GS = 4.5V, I D = 12A ƒ 14.5 29 V GS = 2.8V, I D = 7.5A ƒ V GS(th) Gate Threshold Voltage 0.6 2.0 V V DS = V GS, I D = 250µA I DSS Drain-to-Source Leakage Current 20 V µa DS = 24V, V GS = 0V 0 V DS = 24V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 V GS = 12V Gate-to-Source Reverse Leakage -200 na V GS = -12V Dynamic @ T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 49 S V DS = 15V, I D = 50A Q g Total Gate Charge 24 I D = 24.8A Q gs Gate-to-Source Charge 6.7 nc V DS = 15V Q gd Gate-to-Drain ("Miller") Charge 5.8 V GS = 4.5V ƒ Q oss Output Gate Charge 14 21 V GS = 0V, I D = 24.8A, V DS = 15V t d(on) Turn-On Delay Time 7.2 V DD = 15V t r Rise Time 50 I ns D = 24.8A t d(off) Turn-Off Delay Time 17.6 R G = 0.6Ω t f Fall Time 3.7 V GS = 4.5V ƒ C iss Input Capacitance 2417 V GS = 0V C oss Output Capacitance 707 V DS = 15V C rss Reverse Transfer Capacitance 52 pf ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 213 mj I AR Avalanche Current 62 A Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 62 (Body Diode) showing the A I SM Pulsed Source Current integral reverse 248 (Body Diode) p-n junction diode. 0.88 1.3 V T V SD Diode Forward Voltage J = 25 C, I S = 31A, V GS = 0V ƒ 0.80 T J = 125 C, I S = 31A, V GS = 0V ƒ t rr Reverse Recovery Time 41 62 ns T J = 25 C, I F = 31A, V R =20V Q rr Reverse Recovery Charge 64 96 nc di/dt = 0A/µs ƒ t rr Reverse Recovery Time 43 65 ns T J = 125 C, I F = 31A, V R =20V Q rr Reverse Recovery Charge 70 5 nc di/dt = 0A/µs ƒ 2 www.irf.com G D S
I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF3708/S/LPbF 00 0 2.7V VGS TOP.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 00 0 2.7V VGS TOP.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 1 20µs PULSE WIDTH Tj = 25 C 0.1 1 0 V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH Tj = 175 C 1 0.1 1 0 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 25 C T J = 175 C V DS= 15V 20µs PULSE WIDTH 2.0 3.0 4.0 5.0 6.0 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = 62A 2.0 1.5 1.0 0.5 V GS= V 0.0-60 -40-20 0 20 40 60 80 0 120 140 160 180 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 3500 2800 20 1400 700 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) 8 6 4 2 I = D 24.8A V DS = 15V C rss 0 0 1 0 0 20 30 40 50 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) 00 0 1 T = 175 J C T J = 25 C V GS = 0 V 0.1 0.2 0.8 1.4 2.0 2.6 V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us 1ms ms TC = 25 C TJ = 175 C Single Pulse 1 0.1 1 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
70 V DS R D I D, Drain Current (A) 60 50 40 30 20 Fig a. Switching Time Test Circuit V DS 90% R G V GS V Pulse Width 1 µs Duty Factor 0.1 % D.U.T. + - V DD 0 25 50 75 0 125 150 175 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 1 0.1 D = 0.50 0.20 0. 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 0.01 2. Peak T J= P DM x Z thjc + TC 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
R DS ( on ), Drain-to-Source On Resistance ( R DS(on), Drain-to -Source On Resistance ( IRF3708/S/LPbF Ω ) 0.025 Ω) 0.017 0.020 0.015 0.015 0.013 VGS = 4.5V 0.011 0.0 VGS = V 0.009 I D = 31A 0.005 0 50 0 150 200 250 300 I D, Drain Current ( A ) 0.007 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0.0 V GS, Gate -to -Source Voltage (V) 12V I AS V GS Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T..2µF 50KΩ 3mA.3µF D.U.T. I G I D Current Sampling Resistors + V - DS V GS Q GS Fig 14a&b. Gate Charge Test Circuit and Waveform tp V(BR)DSS R G V DS 20V V G tp L D.U.T I AS 0.01Ω Q G Q GD Charge 15V DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) 600 480 360 240 120 Fig 13. On-Resistance Vs. Gate Voltage I D TOP A 20.7A BOTTOM 24.8A 0 25 50 75 0 125 150 175 Starting T, Junction Temperature ( J C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com
TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.3).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) - A - 4.69 (.185) 4.20 (.165) - B - 1.32 (.052) 1.22 (.048) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1 2 3 4 6.47 (.255) 6. (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 1- GATE 2 - DRAIN 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.4) 2.54 (.0) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTE RNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com 7
D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" N ote: "P " in as s embly line pos ition indicates "L ead-f ree" OR INT E R NAT IONAL RECTIFIER LOGO AS S E MB L Y LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L INT E R NAT IONAL R E CT IF IE R LOGO ASSEMBLY LOT CODE F530S PART NUMBER DATE CODE P = DE S IGNAT E S L E AD-F R E E PRODUCT (OPTIONAL) YEAR 0 = 2000 WE EK 02 A = AS S E MB L Y S IT E COD E 8 www.irf.com
TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information E XAMPLE : THIS IS AN IRL33L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line pos ition indicates "Lead-Free" OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C INTERNATIONAL RECTIFIER LOGO AS S E MBL Y LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE www.irf.com 9
D 2 Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065).90 (.429).70 (.421) 11.60 (.457) 11.40 (.449) 16. (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.7 mh R G = 25Ω, I AS = 24.8 A. ƒ Pulse width 300µs; duty cycle 2%. This is only applied to TO-220AB package Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.06/04 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/