FDP085NA N-Channel PowerTrench MOSFET 0 V, 96 A, 8.5 mω Features R DS(on) = 7.35 mω (Typ.) @ V GS = V, I D = 96 A Fast Switching Speed Low Gate Charge, Q G = 3 nc (Typ.) High Performance Trench Technology for Extremely Low R DS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D G DS TO-220 G S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Parameter FDP085NA-F2 Unit V DSS Drain to Source Voltage 0 V V GSS Gate to Source Voltage ±20 V I D Drain Current - Continuous (T C = 25 o C) 96 - Continuous (T C = 0 o C) 68 I DM Drain Current - Pulsed (Note ) 384 A E AS Single Pulsed Avalanche Energy (Note 2) 269 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P D Power Dissipation (T C = 25 o C) 88 W - Derate Above 25 o C.25 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +75 o C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 Seconds 300 o C A Thermal Characteristics Symbol Parameter FDP085NA-F2 Unit R θjc Thermal Resistance, Junction to Case, Max. 0.8 o C/W R θja Thermal Resistance, Junction to Ambient, Max. 62.5 20 Semiconductor Components Industries, LLC November-207, Rev. 3 Publication Order Number: FDP085NA/D
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDP085NA-F2 FDP085NA TO-220 Tube N/A N/A 50 units Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250 µa, V GS = 0 V,T C = 25 o C 0 - - V BV DSS Breakdown Voltage Temperature I / T J Coefficient D = 250 µa, Referenced to 25 o C - 0.07 - V/ o C V DS = 80 V, V GS = 0 V - - I DSS Zero Gate Voltage Drain Current µa V DS = 80 V, T C = 50 o C - - 500 I GSS Gate to Body Leakage Current V GS = ±20 V, V DS = 0 V - - ±0 na On Characteristics V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250 µa 2.0-4.0 V R DS(on) Static Drain to Source On Resistance V GS = V, I D = 96 A - 7.35 8.5 mω g FS Forward Transconductance V DS = V, I D = 96 A - 72 - S Dynamic Characteristics C iss Input Capacitance - 2025 2695 pf V DS = 50 V, V GS = 0 V, C oss Output Capacitance - 468 620 pf f = MHz C rss Reverse Transfer Capacitance - 20 - pf C oss(er) Energy Releted Output Capacitance V DS = 50 V, V GS = 0 V - 752 - pf Q g(tot) Total Gate Charge at V - 3 40 nc Q gs Gate to Source Gate Charge V GS = V, V DS = 50 V, - 9.7 - nc Q gs2 Gate Charge Threshoid to Plateau I D = 96 A - 5.0 - nc Q gd Gate to Drain Miller Charge (Note 4) - 7.5 - nc ESR Equivalent Series Resistance (G-S) f = MHz - 0.97 - Ω Switching Characteristics t d(on) Turn-On Delay Time - 8 46 ns t r Turn-On Rise Time V DD = 50 V, I D = 96 A, - 22 54 ns t d(off) Turn-Off Delay Time V GS = V, R G = 4.7 Ω - 29 68 ns t f Turn-Off Fall Time (Note 4) - 8 26 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 96 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 384 A V SD Drain to Source Diode Forward Voltage V GS = 0 V, I SD = 96 A - -.3 V t rr Reverse Recovery Time V DD = 50 V,V GS = 0 V, I SD = 96 A, - 59 - ns Q rr Reverse Recovery Charge di F /dt = 0 A/µs - 80 - nc Notes:. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mh, I AS = 3.4 A, R G = 25 Ω, starting T J = 25 C. 3. I SD 96 A, di/dt 200 A/µs, V DD BV DSS, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics ID, Drain Current[A] RDS(ON) [mω], Drain-Source On-Resistance Figure. On-Region Characteristics 500 0 V GS = 5.0V.0V 8.0V 6.5V 6.0V 5.5V 5.0V. 250µs Pulse Test 2. T C = 25 o C 5 0. 5 V DS, Drain-Source Voltage[V] Figure 2. Transfer Characteristics -55 o C. V DS = V 2. 250µs Pulse Test 2 3 4 5 6 7 V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 8 6 2 8 *Note: T C = 25 o C V GS = V V GS = 20V 4 0 0 200 300 400 I D, Drain Current [A] ID, Drain Current[A] IS, Reverse Drain Current [A] 300 0 500 0 75 o C 25 o C 75 o C 25 o C. V GS = 0V 2. 250µs Pulse Test 0.3 0.6 0.9.2.5 V SD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics 000 Figure 6. Gate Charge Characteristics Capacitances [pf] 00 0 C iss C oss *Note:. V GS = 0V 2. f = MHz C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0. 0 V DS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] 8 6 4 2 V DS = 20V V DS = 50V V DS = 80V *Note: I D = 96A 0 0 7 4 2 28 35 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage.2.08.04.00 0.96. V GS = 0V 2. I D = 250µA 0.92-80 -40 0 40 80 20 60 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 00 Figure 8. On-Resistance Variation vs. Temperature RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0.5.0. V GS = V 2. I D = 96A 0.5-80 -40 0 40 80 20 60 200 T J, Junction Temperature [ o C] Figure. Maximum Drain Current vs. Case Temperature 0 ID, Drain Current [A] 0 Operation in This Area is Limited by R DS(on). T C = 25 o C µs 0µs ms ms DC ID, Drain Current [A] 80 60 40 20 V GS = V 2. T J = 75 o C 3. Single Pulse 0. 0 200 V DS, Drain-Source Voltage [V] R θjc = 0.8 o C/W 0 25 50 75 0 25 50 75 T C, Case Temperature [ o C] Figure. Eoss vs. Drain to Source Voltage Figure 2. Unclamped Inductive Switching Capability E OSS, [µj] 2.5 2.0.5.0 0.5 I AS, AVALANCHE CURRENT (A) 30 If R = 0 STARTING T J = 50 o C tav = (L)(IAS)/(.3*RATED BVDSS-VDD) If R = 0 tav = (L/R)In[(IAS*R)/(.3*RATED BVDSS-VDD)+] STARTING T J = 25 o C 0.0 0 20 40 60 80 0 V DS, Drain to Source Voltage [V] 0.0 0. 0 300 t AV, TIME IN AVALANCHE (ms) 4
Typical Performance Characteristics (Continued) Z θjc Thermal (t), Thermal Response Response [Z θjc [ o ] C/W] 0. 0.0 0.5 0.2 0. 0.05 0.02 0.0 Figure 3. Transient Thermal Response Curve Single pulse. Z θjc (t) = 0.8 o C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.005-5 -4-3 -2 - t, Rectangular Pulse Duration [sec] P DM t t 2 5
I G = const. Figure 4. Gate Charge Test Circuit & Waveform V DS R L V DS 90% R G V GS V DD V V GS DUT % V GS t d(on) t r t d(off) tf t on t off Figure 5. Resistive Switching Test Circuit & Waveforms V GS Figure 6. Unclamped Inductive Switching Test Circuit & Waveforms 6
V GS R G DUT I SD Driver + V DS _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 7. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7
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