SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 45 25 Vdc Collector Base Voltage VCBO 5 Vdc Emitter Base Voltage VEBO 5. Vdc Collector Current Continuous IC 8 madc Total Device Dissipation @ TA = 25 C Derate above 25 C PD 625 5. mw mw/ C 2 CASE 29 4, STYLE 7 TO 92 (TO 226AA) Total Device Dissipation @ TC = 25 C Derate above 25 C PD.5 2 Watt mw/ C Operating and Storage Junction Temperature Range TJ, Tstg 55 to +5 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 2 C/W Thermal Resistance, Junction to Case R JC 8. C/W ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (IC = ma, IB = ) Collector Emitter Breakdown Voltage (IC = μa, IE = ) Emitter Base Breakdown Voltage (IE = A, IC = ) Collector Cutoff Current (VCB = V, IE = ) (VCB = 2 V, IE = ) Collector Cutoff Current (VCE = 45 V, VBE = ) (VCE = 25 V, VBE = ) Emitter Cutoff Current (VEB = 4. V, IC = ) V(BR)CEO V(BR)CES 45 25 5 Vdc Vdc V(BR)EBO 5. Vdc ICBO ICES nadc nadc IEBO nadc Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 996
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = ma, VCE =. V) (IC = ma, VCE =. V) Base Emitter On Voltage (IC = ma, VCE =. V) / 6/ 6 25/ 25 4/ 4 hfe 6 25 6 6 25 4 6 VBE(on).2 Vdc Collector Emitter Saturation Voltage (IC = 5 ma, IB = 5 ma) SMALL SIGNAL CHARACTERISTICS Output Capacitance (VCB = V, IE =, f =. MHz) Current Gain Bandwidth Product (IC = ma, VCE = 5. V, f = MHz) VCE(sat).7 Vdc Cob 5 pf ft 2 MHz r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE..7.5...7.5..2.5.2 D =.5.. SINGLE PULSE SINGLE PULSE θjc(t) = (t) θjc θjc = C/W MAX θja(t) = r(t) θja θja = 75 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) θjc(t)...2.5..2.5..5. 2. 5. 2 5 t, TIME (SECONDS) P(pk) t t2 DUTY CYCLE, D = t/t2 Figure. Thermal Response I C, COLLECTOR CURRENT (ma) dc TA = 25 C. s. ms TJ = 5 C dc TC = 25 C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO).. VCE, COLLECTOR EMITTER VOLTAGE μs Figure 2. Active Region Safe Operating Area hfe, DC CURRENT GAIN VCE = V TJ = 25 C.. IC, COLLECTOR CURRENT (AMP) Figure. DC Current Gain 2 Motorola Small Signal Transistors, FETs and Diodes Device Data
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS..8.6.4 TJ = 25 C IC = ma ma ma 5 ma.. IB, BASE CURRENT (ma) Figure 4. Saturation Region V, VOLTAGE (VOLTS)..8.6.4 TA = 25 C VBE(sat) @ IC/IB = VCE(sat) @ IC/IB = VBE(on) @ VCE = V IC, COLLECTOR CURRENT (ma) Figure 5. On Voltages, TEMPERATURE COEFFICIENTS (mv/ C) θ V + 2 θvc for VCE(sat) θvb for VBE IC, COLLECTOR CURRENT (ma) Figure 6. Temperature Coefficients C, CAPACITANCE (pf) Cib Cob. VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances Motorola Small Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS SEATING PLANE R A X X H V N F G P N B L K C D J SECTION X X NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH.. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.75 5 4.45 5.2 B.7 4.2 5. C 5.65.8 4.9 D.6.22.4.55 F.6.9.4.48 G.45.55.5.9 H.95.5 2.42 2.66 J.5.2.9.5 K.5 2.7 L 5 6.5 N.8.5 2.4 2.66 P. 2.54 R.5 2.9 V.5.4 CASE 29 4 (TO 226AA) ISSUE AD STYLE 7: PIN. COLLECTOR 2. BASE. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 292; Phoenix, Arizona 856. 8 44 2447 6F Seibu Butsuryu Center, 4 2 Tatsumi Koto Ku, Tokyo 5, Japan. 52 85 MFAX: RMFAX@email.sps.mot.com TOUCHTONE (62) 244 669 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://design NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong. 852 26629298 4 Motorola Small Signal Transistors, FETs and Diodes Device /D Data
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.