Optocoupler, Phototransistor Output, Very High Isolation Voltage

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CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, 64 Top View A C 65 66 FEATURES Rated recurring peak voltage (repetitive) V IORM = V RMS Thickness through insulation 3 mm 4 Creepage current resistance according to VDE 33/IEC 62 comparative tracking index: CTI 2 Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC C 787 DESCRIPTION E V D E The CNY64/CNY65/CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: DIN EN 6747-5-5 (VDE 884) Optocoupler for electrical safety requirements IEC 695/EN 695 Office machines (applied for reinforced isolation for mains voltage 4 V RMS ) VDE 84 Telecommunication apparatus and data processing IEC 665 Safety for mains-operated electronic and related household apparatus VDE 7/IEC 6335 Household equipment VDE 6 Electronic equipment for electrical power installation VDE 75/IEC 66 Medical equipment ORDER INFORMATION PART CNY64 CNY65 CNY66 CNY64A CNY65A CNY64B CNY65B APPLICATIONS Switch-mode power supplies Line receiver Computer peripheral interface Microprocessor system interface Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage 3 V - for appl. class I - IV at mains voltage 6 V - for appl. class I - III at mains voltage V according to DIN EN 6747-5-5 (VDE 884) AGENCY APPROVALS UL577, file no. E76222 system code H, J, and K, double protection DIN EN 6747-5-5 (VDE 884) VDE related features: - rated impulse voltage (transient overvoltage), V IOTM = 8 kv peak - isolation test voltage (partial discharge test voltage), V pd = 2.8 kv peak REMARKS CTR 5 to 3 %, high isolation distance, 4 pin CTR 5 to 3 %, high isolation distance, 4 pin CTR 5 to 3 %, high isolation distance, 4 pin CTR 63 to 25 %, high isolation distance, 4 pin CTR 63 to 25 %, high isolation distance, 4 pin CTR to 2 %, high isolation distance, 4 pin CTR to 2 %, high isolation distance, 4 pin www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 8354 236 Rev..7, 2-Oct-8

Optocoupler, Phototransistor Output, CNY64, CNY65, CNY66 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 5 V Forward current 75 ma Forward surge current t P µs SM.5 A Power dissipation P diss 2 mw Junction temperature T j C OUTPUT Collector emitter voltage V CEO 32 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t P /T =.5, t P ms I CM ma Power dissipation P diss 3 mw Junction temperature T j C COUPLER AC Isolation test voltage (RMS) t = min V ISO 8.2 kv Total power dissipation P tot 25 mw Ambient temperature range T amb - 55 to + 85 C Storage temperature range T stg - 55 to + C Soldering temperature 2 mm from case, s T sld 26 C Note T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = 5 ma V F.25.6 V Junction capacitance V R =, f = MHz C j 5 pf OUTPUT Collector emitter voltage I C = ma V CEO 32 V Emitter collector voltage I E = µa V ECO 7 V Collector emitter leakage current V CE = 2 V, I f = A I CEO 2 na COUPLER Collector emitter saturation voltage = ma, I C = ma V CEsat.3 V Cut-off frequency V CE = 5 V, = ma, R L = Ω f c khz Coupling capacitance f = MHz C k.3 pf Note T amb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I C / V CE = 5 V, = 5 ma CTR 5 3 % CNY64A CTR 63 25 % CNY65A CTR 63 25 % CNY64B CTR 2 % CNY65B CTR 2 % Document Number: 8354 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com Rev..7, 2-Oct-8 237

CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward current 2 ma OUTPUT Power dissipation P diss 25 mw COUPLER Rated impulse voltage V IOTM kv Safety temperature T si 5 C Note According to DIN EN 6747-5-5 (see figure ). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test %, t test = s V pd 2.8 kv Partial discharge test voltage - lot test (sample test) Insulation resistance t Tr = 6 s, t test = s, (see figure 2) V pd 2.2 kv V IO = 5 V, T amb = 25 C R IO 2 Ω V IO = 5 V, T amb = C R IO Ω V IO = 5 V, T amb = 5 C (construction test only) R IO 9 Ω 25 225 2 75 5 25 75 5 25 I si (ma) P si (mw) 25 5 75 25 5 75 2 95 922 T amb ( C) Fig. - Derating Diagram V IOTM 393 V Pd V IOWM V IORM t t, t 2 = to s t 3, t 4 = s t test = s t stres = 2 s t Tr = 6 s t 3 t test t 4 t stres Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 6747-5-5/DIN EN 6747-; IEC 6747 t 2 t SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time V S = 5 V, I C = 5 ma, R L = Ω, (see figure 3) t d 2.6 µs Rise time V S = 5 V, I C = 5 ma, R L = Ω, (see figure 3) t r 2.4 µs Fall time V S = 5 V, I C = 5 ma, R L = Ω, (see figure 3) t f 2.7 µs Storage time V S = 5 V, I C = 5 ma, R L = Ω, (see figure 3) t s.3 µs Turn-on time V S = 5 V, I C = 5 ma, R L = Ω, (see figure 3) t on 5. µs Turn-off time V S = 5 V, I C = 5 ma, R L = Ω, (see figure 3) t off 3. µs Turn-on time V S = 5 V, = ma, R L = kω, (see figure 4) t on 25. µs Turn-off time V S = 5 V, = ma, R L = kω, (see figure 4) t off 42.5 µs www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 8354 238 Rev..7, 2-Oct-8

Optocoupler, Phototransistor Output, CNY64, CNY65, CNY66 + 5 V I C = 5 ma; adjusted through input amplitude I C % 9 % t p t R G = 5 t p T =. t p = 5 µs 95 9 5 Channel I Channel II Oscilloscope R L M C L 2 pf % t p t d t r t on (= t d + t r ) t r t d t on Pulse duration Delay time Rise time Turn-on time t s t f t off t s t f t off (= t s + t f ) t Storage time Fall time Turn-off time 96 698 Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 5 - Switching Times = ma + 5 V I C R G = 5 Ω t p T =. t p = 5 µs 5 Ω kω Channel I Channel II Oscilloscope R L MΩ C L 2 pf 95 843 Fig. 4 - Test Circuit, Saturated Operation TYPICAL CHARACTERISTICS T amb = 25 C, unless otherwise specified P tot - Total Power Dissipation (mw) 2 6 2 8 4 95 3 Phototransistor IR-diode Coupled device 25 5 75 T amb - Ambient Temperature ( C) - Forward Current (ma) 96 862..2.4.6.8..2.4.6.8 2. V F - Forward Voltage (V) Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 7 - Forward Current vs. Forward Voltage Document Number: 8354 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com Rev..7, 2-Oct-8 239

CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, CTR rel - Relative Current Transfer Ratio.5.4.3.2...9.8.7.6.5-3 - 2-2 3 4 5 6 7 8 96 9 V CE = 5 V = ma T amb - Ambient Temperature ( C) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature I C - Collector Current (ma) = 5 ma ma 5 ma 2 ma ma.. 95 3 V CE - Collector Emitter Voltage (V) Fig. - Collector Current vs. Collector Emitter Voltage I CEO - Collector Dark Current, with open Base (na) 96 2 V CE = 2 V = 2345678 9 T amb - Ambient Temperature ( C) Fig. 9 - Collector Dark Current vs. Ambient Temperature V CEsat - Collector Emitter Saturation Voltage (V)..9.8.7.6.5.4.3 CTR = 5 %.2 2 %. %. 96 92 I C - Collector Current (ma) Fig. 2 - Collector Emitter Saturation Voltage vs. Collector Current I C - Collector Current (ma). V CE = 5 V.. 95 2 - Forward Current (ma) Fig. - Collector Current vs. Forward Current CTR - Current Transfer Ratio (%) 95 5 V CE = 5 V. - Forward Current (ma) Fig. 3 - Current Transfer Ratio vs. Forward Current www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 8354 24 Rev..7, 2-Oct-8

Optocoupler, Phototransistor Output, CNY64, CNY65, CNY66 t on /t off - Turn-on/Turn-off Time (µs) 5 4 3 2 Saturated operation V S = 5 V R L = kω toff t on 5 5 2 2 4 6 8 95 7 - Forward Current (ma) 95 6 I C - Collector Current (ma) t on /t off - Turn-on/Turn-off Time (µs) 2 5 5 t on t off Non-saturated operation V S = 5 V R L = Ω Fig. 4 - Turn-on/Turn-off Time vs. Collector Current Fig. 5 - Turn-on/Turn-off Time vs. Forward Current PACKAGE DIMENSIONS in millimeters FOR CNY64 2.8 ±. 7.2 ±. 9. ±.3 6. ±..6 ±.2 5.8 ±.2.4.5 A Coll Weight: ca..73 g Creepage distance: > 9.5 mm Air path: > 9.5 mm after mounting on PC board Cath E Drawing-No.: 6.544-538.-4 Issue: 2;..98 4765 technical drawings according to DIN specifications Document Number: 8354 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com Rev..7, 2-Oct-8 24

CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, PACKAGE DIMENSIONS in millimeters FOR CNY65 7.8 ±. 9.6 ±. 9. ±.3 6. ±. 5.24 ±.2.4 7.62 ±.2 technical drawings according to DIN specifications.5 A Coll Weight: ca..4 g Creepage distance: > 4 mm Air path: > 4 mm after mounting on PC board Cath E 4763 PACKAGE DIMENSIONS in millimeters FOR CNY66 2.4 ±. 9.6 ±. 9. ±.3 6. ±. 7.8 ±.2 7.62 ±.2 technical drawings according to DIN specifications.4 A Coll.5 Weight: ca..7 g Creepage distance: > 7 mm Air path: > 7 mm after mounting on PC board Cath E 4764 www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 8354 242 Rev..7, 2-Oct-8

Optocoupler, Phototransistor Output, OZONE DEPLETING SUBSTANCES POLICY STATEMENT CNY64, CNY65, CNY66 It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Document Number: 8354 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com Rev..7, 2-Oct-8 243

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 www.vishay.com Revision: 8-Jul-8