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FQB34P0TM_F085 00V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. G S D D -PAK FQB Series Features -33.5A, -00V, R DS(on) = 0.06Ω @V GS = -0 V Low gate charge ( typical 85 nc) Low Crss ( typical 70 pf) Fast switching 00% avalanche tested Improved dv/dt capability 75 C maximum junction temperature rating Qualified to AEC Q0 RoHS Compliant G! S!! D March 06 QFET TM FQB34P0TM_F085 00V P-Channel MOSFET Absolute Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter FQB34P0TM_F085 Units S Drain-Source Voltage -00 V I D Drain Current - Continuous (T C = 5 C) -33.5 A Thermal Characteristics * When mounted on the minimum pad size recommended (PCB Mount) - Continuous (T C = 00 C) -3.5 A I DM Drain Current - Pulsed (Note ) -34 A V GSS Gate-Source Voltage ± 5 V E AS Single Pulsed Avalanche Energy (Note ) 00 mj I AR Avalanche Current (Note ) -33.5 A E AR Repetitive Avalanche Energy (Note ) 5.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P D Power Dissipation (T A = 5 C) * 3.75 W Power Dissipation (T C = 5 C) 55 W - Derate above 5 C.03 W/ C T J, T STG Operating and Storage Temperature Range -55 to +75 C T L Maximum lead temperature for soldering purposes, /8" from case for 5 seconds 300 C Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Case -- 0.97 C/W R θja Thermal Resistance, Junction-to-Ambient * -- 40 C/W R θja Thermal Resistance, Junction-to-Ambient -- 6.5 C/W 06 Fairchild Semiconductor Corporation FQB34P0TM_F085 Rev..
Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage V GS = 0 V, I D = -50 µa -00 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = -50 µa, Referenced to 5 C -- -0. -- V/ C I DSS = -00 V, V GS = 0 V -- -- - µa Zero Gate Voltage Drain Current = -80 V, T C = 50 C -- -- -0 µa I GSSF Gate-Body Leakage Current, Forward V GS = -5 V, = 0 V -- -- -00 na I GSSR Gate-Body Leakage Current, Reverse V GS = 5 V, = 0 V -- -- 00 na On Characteristics V GS(th) Gate Threshold Voltage = V GS, I D = -50 µa -.0 -- -4.0 V R DS(on) Static Drain-Source V On-Resistance GS = -0 V, I D = -6.75 A -- 0.049 0.06 Ω g FS Forward Transconductance = -40 V, I D = -6.75 A (Note 4) -- 3 -- S Dynamic Characteristics C iss Input Capacitance = -5 V, V GS = 0 V, -- 40 90 pf C oss Output Capacitance f =.0 MHz -- 730 950 pf C rss Reverse Transfer Capacitance -- 70 0 pf Switching Characteristics t d(on) Turn-On Delay Time -- 5 60 ns V DD = -50 V, I D = -33.5 A, t r Turn-On Rise Time R G = 5 Ω -- 50 50 ns t d(off) Turn-Off Delay Time -- 60 330 ns t f Turn-Off Fall Time (Note 4, 5) -- 0 430 ns Q g Total Gate Charge = -80 V, I D = -33.5 A, -- 85 0 nc Q gs Gate-Source Charge V GS = -0 V -- 5 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 45 -- nc FQB34P0TM_F085 00V P-Channel MOSFET Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- -33.5 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- -34 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = -33.5 A -- -- -4.0 V t rr Reverse Recovery Time V GS = 0 V, I S = -33.5 A, -- 60 -- ns Q rr Reverse Recovery Charge di F / dt = 00 A/µs (Note 4) -- 0.88 -- µc Notes:. Repetitive Rating : Pulse width limited by maximum junction temperature. L =3.9mH, I AS = -33.5A, V DD = -5V, R G = 5 Ω, Starting T J = 5 C 3. I SD -33.5A, di/dt 300A/µs, V DD BS, Starting T J = 5 C 4. Pulse Test : Pulse width 300µs, Duty cycle % 5. Essentially independent of operating temperature FQB34P0TM_F085 Rev..
Typical Characteristics -I D, Drain Current [A] R DS(on) [Ω], Drain-Source On-Resistance -, Drain-Source Voltage [V] Figure. On-Region Characteristics -I D, Drain Current [A] -I DR, Reverse Drain Current [A] 0 0 0 0 0-4 6 8 0 0 0 0 0 75 5-55 -V GS, Gate-Source Voltage [V] Notes :. = -40V. 50µ s Pulse Test Figure. Transfer Characteristics 75 5 Notes :. V GS = 0V. 50µs Pulse Test FQB34P0TM_F085 00V P-Channel MOSFET -I D, Drain Current [A] 0-0.0 0.5.0.5.0.5 3.0 -V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitances [pf] 6500 6000 5500 5000 4500 4000 3500 3000 500 000 500 000 500 C oss C iss C rss 0 0-0 0 0, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes :. V GS = 0 V. f = MHz -V GS, Gate-Source Voltage [V] 0 8 6 4 = -0V = -50V = -80V Note : I = -33.5 A D 0 0 0 40 60 80 00 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics FQB34P0TM_F085 Rev.. 3
Typical Characteristics (Continued) -BS, (Normalized) Drain-Source Breakdown Voltage -I D, Drain Current [A] 0 0 0 0...0 0.9 0.8-00 -50 0 50 00 50 00 Operation in This Area is Limited by R DS(on) T J, Junction Temperature [ o C] Notes :. T C = 5 o C. T J = 75 o C 3. Single Pulse DC 0 ms ms Notes :. V GS = 0 V. I D = -50 µ A Figure 7. Breakdown Voltage Variation vs. Temperature 00 µs R DS(ON), (Normalized) Drain-Source On-Resistance -I D, Drain Current [A] 40 35 30 5 0 5 0 5.5.0.5.0 0.5 0.0-00 -50 0 50 00 50 00 T J, Junction Temperature [ o C] Notes :. V GS = -0 V. I D = -6.75 A Figure 8. On-Resistance Variation vs. Temperature FQB34P0TM_F085 00V P-Channel MOSFET 0-0 0 0 0 -, Drain-Source Voltage [V] 0 5 50 75 00 5 50 75 T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 0. Maximum Drain Current vs. Case Temperature 0 0 D=0.5 Z θ JC (t), Thermal Response 0-0. 0. 0.05 0.0 0.0 single pulse Notes :. Z θ JC (t) = 0.97 /W Max.. Duty Factor, D=t /t 3. T JM - T C = P DM * Z θ JC (t) P DM t t 0-0 -5 0-4 0-3 0-0 - 0 0 0 t, Square Wave Pulse Duration [sec] Figure. Transient Thermal Response Curve FQB34P0TM_F085 Rev.. 4
Gate Charge Test Circuit & Waveform V 00nF 50KΩ 300nF Same Type as DUT V GS -0V Q g V GS Q gs Q gd -3mA DUT Charge Resistive Switching Test Circuit & Waveforms R L t on t off V GS V DD t d(on) t r t d(off) tf R G V GS 0% -0V DUT 90% Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- LI AS BS -------------------- BS -V DD I D t p Time R G V DD V DD I D (t) (t) -0V DUT I AS t p BS FQB34P0TM_F085 Rev.. 5
Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT _ I SD Driver R G Compliment of DUT (N-Channel) V GS dv/dt controlled by RG I SD controlled by pulse period L V DD FQB34P0TM_F085 00V P-Channel MOSFET V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 0V I SD ( DUT ) ( DUT ) Body Diode Reverse Current I RM di/dt I FM, Body Diode Forward Current V SD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt V DD FQB34P0TM_F085 Rev.. 6
4 0.67 9.65 -A-.68.00 4 0.67 9.45 9.65 8.38 0.00 (.) 3 5.08 6. MIN.78 MAX.78.4 0.99 0.5 0.5 MAX PLASTIC BODY STUB 0.5 M B A M FRONT VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL 3 LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL -B-.65.4 4.83 4.06 5.08 3.80.05 4 6.86 MIN 4 5.88 4.6 SEE DETAIL A 3 3 0.5 MAX 0.5 SEATING PLANE BACK VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL (5.38).79.78 DETAIL A, ROTATED 90 SCALE: X GAGE PLANE 0.74 0.33 8 0 8 0 0.0 B NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-63, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER DIMENSIONING AND TOLERANCING PER ASME Y4.5-009. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE). E) LANDPATTERN RECOMMENDATION PER IPC TO54P54X48-3N F) FILENAME: TO63A0REV8
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