MJD (NPN) MJD7 (PNP) Preferred Device Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead ersion in Plastic Sleeves ( Suffix) Electrically Similar to Popular TIP and TIP Series PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Max Unit CollectorEmitter oltage CEO dc CollectorBase oltage CB dc EmitterBase oltage EB 5 dc Collector Current Continuous Peak I C Adc Base Current I B 5 madc Total Power Dissipation @ T C = 5 C Derate above 5 C Total Power Dissipation (Note) @ T A = 5 C Derate above 5 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D P D.75. W W/ C W W/ C T J, T stg 65 to +5 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 6.5 C/W Thermal Resistance, JunctiontoAmbient (Note ) R JA 7. C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. These ratings are applicable when surface mounted on the minimum pad sizes recommended. SILICON POWER TRANSISTORS AMPERES OLTS, WATTS CASE 69C CASE 69D MARKING DIAGRAMS YWW JxG YWW JxG Y = Year WW = Work Week x = or 7 G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 6 January, 6 Rev. 7 Publication Order Number: MJD/D
MJD (NPN) MJD7 (PNP) ÎÎ ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) ÎÎÎÎ ÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS ÎÎ CollectorEmitter Sustaining oltage (Note ) (I C = madc, I B = ) CEO(sus) dc ÎÎÎÎ ÎÎÎ ÎÎÎÎ Collector Cutoff Current I CEO ÎÎÎÎ Adc ( CE = 5 dc, I B = ) ÎÎÎÎ Collector Cutoff Current I CBO Î ( CB = dc, I E = ) ÎÎÎÎ Adc ÎÎ Emitter Cutoff Current I ( BE = 5 dc, I C = ) EBO madc ÎÎÎÎ ÎÎÎ ÎÎÎÎ CollectorCutoff Current I CBO ÎÎÎÎ Adc ( CB = 8 dc, I E = ) ÎÎÎ ÎÎÎ ÎÎÎÎ EmitterCutoff Current I EBO Î ( BE = 5 dc, I C = ) ÎÎÎÎ madc ÎÎ ON CHARACTERISTICS ÎÎ DC Current Gain h (I C =.5 Adc, CE = dc) FE ÎÎÎÎ 5 Î (I C = Adc, CE = dc) (I C = Adc, CE = dc) ÎÎÎ ÎÎÎ,ÎÎÎÎ ÎÎ CollectorEmitter Saturation oltage (I C = Adc, I B = 8 madc) CE(sat) dc ÎÎÎÎ Î (I C = Adc, I B = madc) ÎÎÎÎ BaseEmitter Saturation oltage (I C = Adc, I B BE(sat) Î = madc) ÎÎÎÎ dc ÎÎ BaseEmitter On oltage (I C = Adc, CE = dc) BE(on) dc ÎÎÎÎ ÎÎÎ.8 ÎÎÎÎ ÎÎ DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f T ÎÎÎÎ MHz (I C =.75 Adc, CE = dc, f = MHz) 5 ÎÎÎÎ Output Capacitance ( CB = dc, I E C ob ÎÎÎÎ pf =, f =. MHz) MJD7 MJDÎÎÎ ÎÎÎ ÎÎÎÎ. Pulse Test: Pulse Width s, Duty Cycle %. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. R B & R C ARIED TO OBTAIN DESIRED CURRENT LEELS МD, MUST BE FAST RECOERY TYPE, e.g.: ММN585 USED ABOE I B ma ММMSD6 USED BELOW I B ma APPROX + 8 APPROX t r, t f ns DUTY CYCLE = % 5 s 5 R B D 8 k 6 + TUT CC FOR t d AND t r, D IS DISCONNECTED AND = FOR NPN TEST CIRCUIT REERSE ALL POLARITIES. R C SCOPE t, TIME ( s) μ.8 t s CC = I C /I B = 5. t d @ BE(off) = PNP. NPN..6... t f I B = I B T J = 5 C t r Figure. Switching Times Test Circuit Figure. Switching Times
MJD (NPN) MJD7 (PNP) r(t), EFFECTIE TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.5....7.5.. D =.5...5. SINGLE PULSE R JC(t) = r(t) R JC R JC = 6.5 C/W D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T C = P (pk) JC(t) P (pk) t t DUTY CYCLE, D = t /t.....5....5 5 5 5 t, TIME OR PULSE WIDTH (ms) Figure. Thermal Response ACTIEREGION SAFEOPERATING AREA 7 5.7 ms 5 ms.5 dc.. BONDING WIRE LIMITED. THERMAL LIMIT SECOND BREAKDOWN LIMIT T J = 5 C CURES APPLY BELOW RATED CEO s 5 s P D, POWER DISSIPATION (WATTS) T A.5.5.5 T C 5 5 5 T A SURFACE MOUNT T C 5 7 5 7 CE, COLLECTOREMITTER OLTAGE (OLTS) 5 5 75 5 5 T, TEMPERATURE ( C) Figure. Maximum Rated Forward Biased Safe Operating Area Figure 5. Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on T J(pk) = 5 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) < 5 C. T J(pk) may be calculated from the data in Figure. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. C, CAPACITANCE (pf) 7 T C = 5 C 5 C ob C ib PNP NPN..6... 6 R, REERSE OLTAGE (OLTS) Figure 6. Capacitance
MJD (NPN) MJD7 (PNP) TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD PNP MJD7 6 k k T J = 5 C CE = 6 k k T C = 5 C CE = h FE, DC CURRENT GAIN k k k 8 6 55 C 5 C h FE, DC CURRENT GAIN k k k 8 6 55 C 5 C..6.....6... Figure 7. DC Current Gain CE, COLLECTOREMITTER OLTAGE (OLTS)..6..8. I C =.5 A A A A...5 5 I B, BASE CURRENT (ma) T J = 5 C 5 CE, COLLECTOREMITTER OLTAGE (OLTS). Figure 8. Collector Saturation Region.6..8. I C =.5 A A A A...5 5 I B, BASE CURRENT (ma) T J = 5 C 5.. T J = 5 C T J = 5 C.8.8, OLTAGE (OLTS). BE(sat) @ I C /I B = 5 CE(sat) @ I C /I B = 5 BE @ CE =, OLTAGE (OLTS). BE(sat) @ I C /I B = 5 CE(sat) @ I C /I B = 5 BE @ CE =....6.... Figure 9. On oltages.6...
MJD (NPN) MJD7 (PNP) NPN MJD PNP MJD7, TEMPERATURE COEFFICIENTS (m/ C) θ +.8.8.6...8. *APPLIED FOR I C /I B < h FE / * C FOR CE(sat) 5 C TO 5 C 55 C TO 5 C C FOR BE 5 C TO 5 C 55 C TO 5 C.6..., TEMPERATURE COEFFICIENTS (m/ C) θ +.8.8.6...8. *APPLIES FOR I C /I B < h FE / * C FOR CE(sat) B FOR BE 5 C TO 5 C 55 C TO 5 C 5 C TO 5 C 55 C TO 5 C.6... Figure. Temperature Coefficients 5 5, COLLECTOR CURRENT ( A) μ I C REERSE CE = T J = 5 C C FORWARD 5 C.. +. +. + +.8 + +. +. BE, BASEEMITTER OLTAGE (OLTS), COLLECTOR CURRENT ( A) μ I C REERSE CE = T J = 5 C C 5 C Figure. Collector CutOff Region FORWARD + +. +....8.. BE, BASEEMITTER OLTAGE (OLTS) PNP COLLECTOR NPN COLLECTOR BASE BASE 8 k 8 k EMITTER EMITTER Figure. Darlington Schematic 5
MJD (NPN) MJD7 (PNP) ORDERING INFORMATION MJD MJDG MJD MJDG Device Package Type Package Shipping 69C 69D 75 Units / Rail MJDRL MJDRLG 8 Tape & Reel MJDT MJDTG 69C 5 Tape & Reel MJD7 MJD7G MJD7 75 Units / Rail MJD7G 69D MJD7T MJD7TG 69C 5 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 6
MJD (NPN) MJD7 (PNP) PACKAGE DIMENSIONS CASE 69C ISSUE O B C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. S F R G L A K D PL J H. (.5) M T E U Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A.5.5 5.97 6. B.5 5 6.5 6.7 C.86.9.9.8 D.7.5 9.88 E.8..58 F.7.5.9. G.8 BSC.58 BSC H...87. J.8..58 K...6.89 L.9 BSC.9 BSC R.8.5.57 5.5 S.5.. U..5.5.5.89.7 Z.55.9 SOLDERING FOOTPRINT* 6...58...8 5.8.8.6.6 6.7. SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
MJD (NPN) MJD7 (PNP) PACKAGE DIMENSIONS CASE 69D ISSUE B B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. S T SEATING PLANE F G A K D PL J. (.5) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A.5.5 5.97 6.5 B.5 5 6.5 6.7 C.86.9.9.8 D.7.5 9.88 E.8..58 F.7.5.9. G.9 BSC.9 BSC H...87. J.8..58 K.5.8 8.89 9.65 R.8.5.5 5.5 S.5...5.5.89.7 Z.55.9 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Phoenix, Arizona 858 USA Phone: 88977 or 886 Toll Free USA/Canada Fax: 889779 or 8867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 55 Phone: 857785 8 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJD/D