IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM

Similar documents
IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM

IRF510. Features. 5.6A, 100V, Ohm, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet June File Number 1573.

IRF640, RF1S640SM. 18A, 200V, Ohm, N-Channel Power MOSFETs. Features. Title F64. 1S6 SM) b- t A, 0V, 80 m, Ordering Information. Symbol.

IRFP A, 500V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

IRF130, IRF131, IRF132, IRF133

DatasheetArchive.com. Request For Quotation

IRF630, RF1S630SM. 9A, 200V, Ohm, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

Features. Symbol JEDEC TO-204AA GATE (PIN 1)

IRF610. Features. 3.3A, 200V, Ohm, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet January 2002

G D S. Drain-Source Voltage 30. V Gate-Source Voltage

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

BUZ71. 14A, 50V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet December 2001

V DS I D (at V GS =10V) R DS(ON) (at V GS = 7V) 100% UIS Tested 100% R g Tested TO-263 D 2 PAK D D G S AOB480L S D S G

P-Channel 60-V (D-S) MOSFET

Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1)

AOT418L/AOB418L 100V N-Channel MOSFET SDMOS TM

N-Channel Enhancement Mode Field Effect Transistor Amp 60Volt. Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS 1MΩ) VDGR 60 V VGSS

Is Now Part of To learn more about ON Semiconductor, please visit our website at

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested S G. Symbol. Gate-Source Voltage V GS I DM T A =25 C I D

FREDFET FAST RECOVERY BODY DIODE = 0V, I D = 10V, I D = 29A) = 600V, V GS = 0V) = 0V, T C = 480V, V GS = 0V) = ±30V, V DS. = 5mA)

HP4410DY. Features. 10A, 30V, Ohm, Single N-Channel, Logic Level Power MOSFET. Symbol. Ordering Information. Packaging

AOD423/AOI423/AOY423 30V P-Channel MOSFET

P-Channel 30-V (D-S) MOSFET

TO-261 G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 500 V. Symbol Parameter Max SLB830S SLI830S R θjc

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested TO-251A IPAK. D TopView. Top View G D S

NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor

MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27Ω

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor

FEATURES. Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ± 25

I D (at V GS =10V) R DS(ON) (at V GS =10V) < 1.3Ω. 100% UIS Tested! 100% R g Tested!

LESHAN RADIO COMPANY, LTD.

Green. Features 90A 90A. PowerDI S. Pin1. Top View Pin Configuration. Part Number Case Packaging DMT4004LPS-13 PowerDI ,500 / Tape & Reel

Automotive P-Channel 30 V (D-S) 175 C MOSFET

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251. Top View. Bottom View D G AOU7S60

Power MOSFET. IRFD9010PbF SiHFD9010-E3 IRFD9010 SiHFD9010

AO V N-Channel MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

P-Channel 40-V (D-S) MOSFET

I D (at V GS =10V) 2.5A. R DS(ON) (at V GS =10V) < 3.5Ω. 100% UIS Tested! 100% R g Tested! TO251. Top View. Bottom View S D AOU3N60 V DS

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3A D. Pin 1

P-Channel 30 V (D-S) MOSFET

AO4406 N-Channel Enhancement Mode Field Effect Transistor

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.56Ω. 100% UIS Tested! 100% R g Tested! TO251A IPAK G S

UNISONIC TECHNOLOGIES CO., LTD

SMPS MOSFET. V DSS R DS(on) max I D

Automotive N-Channel 150 V (D-S) 175 C MOSFET

V DS. 100% UIS Tested 100% R g Tested

Automotive P-Channel 30 V (D-S) 175 C MOSFET

Features. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted

Automotive P-Channel 30 V (D-S) 175 C MOSFET

Dual N & P-Channel 30V Power MOSFET with low on-resistance and fast switching performance. High energy efficiency and good thermal performance.

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.56Ω. DFN 3x3A_EP Top View. Top View

Super Junction MOSFET

NVTFS5820NL. Power MOSFET 60 V, 11.5 m, Single N Channel, 8FL

N-Channel 20-V (D-S) MOSFET

P-Channel 12-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

V DS. 100% UIS Tested 100% R g Tested

AO4407 P-Channel Enhancement Mode Field Effect Transistor

HCA80R250T 800V N-Channel Super Junction MOSFET

HCD80R1K4E 800V N-Channel Super Junction MOSFET

mj T STG T J -55 to 150 C Operating Junction Temperature Range Parameter

AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM

AO V N-Channel MOSFET. General Description. Features

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HCD80R650E 800V N-Channel Super Junction MOSFET

N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A

V DS. 100% UIS Tested 100% R g Tested SOIC-8 D

AO V P-Channel MOSFET

N-Channel CICLON NexFET Power MOSFETs CSD16410Q5A

HCI70R500E 700V N-Channel Super Junction MOSFET

AO V P-Channel MOSFET. V DS R DS(ON) (at V GS =-4.5V) -30V

AO V P-Channel MOSFET

N-Channel CICLON NexFET Power MOSFETs CSD16413Q5A

Power MOSFET. IRFD9010PbF SiHFD9010-E3 IRFD9010 SiHFD9010

V DS. ESD Protected 100% UIS Tested 100% R g Tested

UNISONIC TECHNOLOGIES CO., LTD UF830

V DS (V) = 30V I D = 10A (V GS = 10V) R DS(ON) < 19.5mΩ (V GS = 10V) R DS(ON) < 26mΩ (V GS = 4.5V) V DS V GS I D I DM I AR E AR P D T J, T STG

AO4407A P-Channel Enhancement Mode Field Effect Transistor

V DS R DS(ON) (at V GS =-2.5V)

V DS. Absolute Maximum Ratings T A =25 C unless otherwise noted Symbol Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain T A =25 C V GS

HCS80R1K4E 800V N-Channel Super Junction MOSFET

UNISONIC TECHNOLOGIES CO., LTD

HCD80R600R 800V N-Channel Super Junction MOSFET

G S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3

V DS I D (at V GS =10V) R DS(ON) (at V GS =1.8V) SOT23 D S S

AO V P-Channel MOSFET V DS. -60V I D (at V GS =-10V) -4A R DS(ON) (at V GS = -4.5V)

G S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) SOT23 D S S

AO3400A. 30V N-Channel MOSFET V DS. 30V I D (at V GS =10V) 5.7A R DS(ON) (at V GS = 2.5V)

G S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.

AO4468 N-Channel Enhancement Mode Field Effect Transistor

HCS80R380R 800V N-Channel Super Junction MOSFET

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AOD380A60 600V a MOS5 TM N-Channel Power Transistor

AO V P-Channel MOSFET

Transcription:

July 998 emiconductor IRF954, IRF954, IRF9542, IRF9543, RF954, RF954M -5A and -9A, -8V and -V,.2 and.3 Ohm, P-Channel Power MOFETs Features -5A and -9A, -8V and -V r (ON) =.2Ω and.3ω ingle Pulse Avalanche Energy Rated OA is Power issipation Limited Nanosecond witching peeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 uidelines for oldering urface Mount Components to PC Boards Ordering Information PART NUMBER PACKAE BRAN escription These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly evelopmental Type TA752. ymbol IRF954 TO-22AB IRF954 IRF954 TO-22AB IRF954 IRF9542 TO-22AB IRF9542 IRF9543 TO-22AB IRF9543 RF954 TO-262AA RF954 RF954M TO-263AB RF954 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF954M9A. Packaging JEEC TO-22AB JEEC TO-262AA OURCE RAIN ATE RAIN (FLANE) OURCE RAIN ATE RAIN (FLANE) JEEC TO-263AB ATE OURCE RAIN (FLANE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper E Handling Procedures. Copyright Harris Corporation 998 File Number 2282.4

Absolute Maximum Ratings T C = 25 o C, Unless Otherwise pecified IRF954, RF954, RF954M IRF954 IRF9542 IRF9543 UNIT rain to ource Voltage (Note )...................V - -8 - -8 V rain to ate Voltage (R = 2kΩ) (Note )....... V R - -8 - -8 V Continuous rain Current.......................... I -9 T C = o C................................... I -2 Pulsed rain Current (Note 3)..................... I M -76-76 -6-6 A ate to ource Voltage.......................... ±2 ±2 ±2 ±2 V Maximum Power issipation (Figure )...............P 5 5 5 5 W Linear erating Factor (Figure )...................... W/ o C ingle Pulse Avalanche Energy Rating (Note 4).........E A 96 96 96 96 mj Operating and torage Temperature............ T J, T T -55 to 75-55 to 75-55 to 75-55 to 75 o C Maximum Temperature for oldering Leads at.63in (.6mm) from Case for s......... T L 3 Package Body for s, ee Techbrief 334......... T pkg 26 CAUTION: tresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE:. T J = 25 o C to 5 o C. IRF954, IRF954, IRF9542, IRF9543, RF954, RF954M -9-2 3 26-5 - 3 26-5 - 3 26 A A o C o C Electrical pecifications T C = 25 o C, Unless Otherwise pecified PARAMETER YMBOL TET CONITION MIN TYP MAX UNIT rain to ource Breakdown Voltage BV I = -25µA, = V IRF954, IRF9542, (Figure ) RF954, RF954M - - - V IRF954, IRF9543-8 - - V ate to Threshold Voltage (TH) = V, I = -25µA -2 - -4 V Zero ate Voltage rain Current I V = Rated BV, = V - - -25 µa V =.8 x Rated BV, = V T C = 25 o C On-tate rain Current (Note 2) I (ON) V > I (ON) x r (ON) MAX, = -V IRF954, IRF954, RF954, RF954M - - -25 µa -9 - - A IRF9542, IRF9543-5 - - A ate to ource Leakage Current I = ±2V - - ± na rain to ource On Resistance (Note 2) r (ON) I = -A, = -V IRF954, IRF954, (Figures 8, 9) RF954, RF954M -.5.2 Ω IRF9542, IRF9543 -.22.3 Ω Forward Transconductance (Note 2) g fs V > I (ON) x r (ON) MAX, I = -6A (Figure 2) 5 7 - Turn-On elay Time t d(on) V = -5V, I 9A, R = 9.Ω, R L = 2.3Ω, - 6 2 ns Rise Time t r = -V, (Figures 7, 8) MOFET witching Times are Essentially - 65 ns Turn-Off elay Time t d(off) Independent of Operating Temperature - 47 7 ns Fall Time t f - 28 7 ns Total ate Charge (ate to ource + ate to rain) Q g(tot) = -V, I = -9A, V =.8 x Rated BV, I g(ref) = -.5mA (Figures 4, 9, 2) ate Charge is Essentially Independent of Operating Temperature - 7 9 nc ate to ource Charge Q gs - 4 - nc ate to rain Miller Charge Q gd - 56 - nc 2

IRF954, IRF954, IRF9542, IRF9543, RF954, RF954M Electrical pecifications T C = 25 o C, Unless Otherwise pecified (Continued) PARAMETER YMBOL TET CONITION MIN TYP MAX UNIT Input Capacitance C I V = -25V, = V, f = MHz - - pf Output Capacitance C O (Figure ) - 55 - pf Reverse Transfer Capacitance C R - 25 - pf Internal rain Inductance L Measured From the Contact crew on Tab to the Center of ie Measured From the rain Lead, 6mm (.25in) from Package to the Center of ie Internal ource Inductance L Measured From the ource Lead, 6mm (.25in) From Package to ource Bonding Pad Modified MOFET ymbol howing the Internal evices Inductances L L - 3.5 - nh - 4.5 - nh - 7.5 - nh Thermal Resistance Junction to Case R θjc - - o C/W Thermal Resistance Junction to Ambient R θja Typical ocket Mount - - 62.5 o C/W ource to rain iode pecifications PARAMETER YMBOL TET CONITION MIN TYP MAX UNIT Continuous ource to rain Current I Modified MOFET ymbol - - -9 A howing the Integral Pulse ource to rain Current (Note 3) I M Reverse P-N Junction iode - - -76 A ource to rain iode Voltage (Note 2) V T C = 25 o C, I = -9A, = V (Figure 3) - - -.5 V Reverse Recovery Time t rr T J = 5 o C, I = 9A, di /dt = A/µs - 7 - ns Reverse Recovery Charge Q RR T J = 5 o C, I = 9A, di /dt = A/µs -.8 - µc NOTE: 2. Pulse test: pulse width 3µs, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. ee Transient Thermal Impedance curve (Figure 3). 4. V = 25V, starting T J = 25 o C, L = 4mH, R = 25Ω, peak I A = 9A. (Figures 5, 6). 3

IRF954, IRF954, IRF9542, IRF9543, RF954, RF954M Typical Performance Curves Unless Otherwise pecified.2-2 POWER IIPATION MULTIPLIER..8.6.4.2-2 -5 - -5 IRF9542, IRF9543 IRF954, IRF954, RF954, M 25 5 75 25 5 75 T C, CAE TEMPERATURE ( o C) 25 75 25 T C, CAE TEMPERATURE ( o C) 75 FIURE. NORMALIZE POWER IIPATION vs CAE TEMPERATURE FIURE 2. MAXIMUM CONTINUOU RAIN CURRENT vs CAE TEMPERATURE Z θjc, TRANIENT THERMAL IMPEANCE ( o C/W)..5.2..5.2. INLE PULE. -5-4 -3-2 - t, RECTANULAR PULE URATION (s) P M t t2 NOTE: UTY FACTOR: = t /t 2 PEAK T J = P M x R θjc + T C FIURE 3. NORMALIZE MAXIMUM TRANIENT THERMAL IMPEANCE 2 IRF954, RF954, M IRF9542, 3. IRF9542, 3 IRF954, Rf954, M OPERATION IN THI AREA I LIMITE BY r (ON) T C = 25 o C T J = MAX RATE INLE PULE IRF954, 3 µs µs ms ms ms FIURE 4. FORWAR BIA AFE OPERATIN AREA C IRF954, 2 RF954, M 5 - -8-6 -4 = -6V PULE URATION = 8µs = -4V = -2V = -V = -9V = -8V -2 = -7V = -6V = -5V = -4V - -2-3 -4 FIURE 5. OUTPUT CHARACTERITIC -5 4

IRF954, IRF954, IRF9542, IRF9543, RF954, RF954M Typical Performance Curves Unless Otherwise pecified (Continued) -5-4 -3-2 - PULE URATION = 8µs = -6V = -2V = -4V = -V = -9V = -8V = -7V = -6V = -5V V = -4V -2-4 -6-8 - I (ON), RAIN TO OURCE CURRENT (A) - PULE URATION = 8µs - - T J = 25 o C T J = 25 o C T J = -55 o C -. -2-4 -6-8 - -2-4, ATE TO OURCE VOLTAE (V) FIURE 6. ATURATION CHARACTERITIC FIURE 7. TRANFER CHARACTERITIC r (ON), RAIN TO OURCE ON REITANCE (Ω).26.22.8.4. PULE URATION = 8µs = -V = -2V NORMALIZE RAIN TO OURCE ON REITANCE 2..5..5 = -V I = -A -2-4 -6-8 - NOTE: Heating effect of 2µs pulse is minimal. FIURE 8. RAIN TO OURCE ON REITANCE vs ATE VOLTAE AN RAIN CURRENT.2-4 4 8 2 6 T J, JUNCTION TEMPERATURE ( o C) FIURE 9. NORMALIZE RAIN TO OURCE ON REITANCE vs JUNCTION TEMPERATURE NORMALIZE RAIN TO OURCE BREAKOWN VOLTAE.5.5.95.85 I = 25µA C, CAPACITANCE (pf) 2 6 2 8 4 C I C O C R = V, f = MHz C I = C + C C R = C C O C + C.75-4 4 8 2 6 T J, JUNCTION TEMPERATURE ( o C) - -2-3 -4-5 FIURE. NORMALIZE RAIN TO OURCE BREAKOWN VOLTAE vs JUNCTION TEMPERATURE FIURE. CAPACITANCE vs RAIN TO OURCE VOLTAE 5

IRF954, IRF954, IRF9542, IRF9543, RF954, RF954M Typical Performance Curves Unless Otherwise pecified (Continued) g fs, TRANCONUCTANCE () 5 PULE URATION = 8µs 2 T J = -55 o C 9 T J = 25 o C 6 T J = 25 o C 3-2 -4-6 -8 - FIURE 2. TRANCONUCTANCE vs RAIN CURRENT I, OURCE TO RAIN CURRENT (A) T J = 5 o C T J = 25 o C..4.6.8..2.4.6.8 V, OURCE TO RAIN VOLTAE (V) FIURE 3. OURCE TO RAIN IOE VOLTAE I = -9A, ATE TO OURCE (V) - 5 - V = -2V V = -5V V = -8V, IRF954, IRF9542 2 4 6 8 Q g(tot), ATE CHARE (nc) FIURE 4. ATE TO OURCE VOLTAE vs ATE CHARE 6

IRF954, IRF954, IRF9542, IRF9543, RF954, RF954M Test Circuits and Waveforms V t AV L VARY t P TO OBTAIN REQUIRE PEAK I A R - V + V t P UT I A I A.Ω t P V V BV FIURE 5. UNCLAMPE ENERY TET CIRCUIT FIURE 6. UNCLAMPE ENERY WAVEFORM t ON t d(on) t OFF t d(off) R L t r % t f % R UT - V + V 9% 9% % 5% PULE WITH 5% 9% FIURE 7. WITCHIN TIME TET CIRCUIT FIURE 8. REITIVE WITCHIN WAVEFORM CURRENT REULATOR -V (IOLATE UPPLY) 2V BATTERY.2µF 5kΩ.3µF UT V Q gs Q gd I g(ref) I CURRENT AMPLIN REITOR UT +V I CURRENT AMPLIN REITOR V I g(ref) Q g(tot) FIURE 9. ATE CHARE TET CIRCUIT FIURE 2. ATE CHARE WAVEFORM 7