500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features 8.0A, 500V, R DS(on) = 0.8Ω @ = 10 V Low gate charge ( typical 41 nc) Low Crss ( typical 35 pf) Fast switching 100% avalanche tested Improved dv/dt capability February 2005 D G D S TO-220 IRF Series G D S TO-220F IRFS Series G S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter IRF840B IRFS840B Units S Drain-Source Voltage 500 V Drain Current - Continuous (T C = 25 C) 8.0 8.0 A - Continuous (T C = 100 C) 5.1 5.1 A M Drain Current - Pulsed (Note 1) 32 32 A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 320 mj I AR Avalanche Current (Note 1) 8.0 A E AR Repetitive Avalanche Energy (Note 1) 13.4 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P D Power Dissipation (T C = 25 C) 134 44 W - Derate above 25 C 1.08 0.35 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF840B IRFS840B Units R θjc Thermal Resistance, Junction-to-Case Max. 0.93 2.86 C/W R θcs Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W R θja Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 C/W
Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 µa 500 -- -- V BS Breakdown Voltage Temperature / T J Coefficient = 250 µa, Referenced to 25 C -- 0.55 -- V/ C SS = 500 V, = 0 V -- -- 10 µa Zero Gate Voltage Drain Current = 400 V, T C = 125 C -- -- 100 µa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, = 250 µa 2.0 -- 4.0 V R DS(on) Static Drain-Source V On-Resistance GS = 10 V, = 4.0 A -- 0.65 0.8 Ω g FS Forward Transconductance = 40 V, = 4.0 A (Note 4) -- 7.3 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 1400 1800 pf C oss Output Capacitance f = 1.0 MHz -- 145 190 pf C rss Reverse Transfer Capacitance -- 35 45 pf Switching Characteristics t d(on) Turn-On Delay Time -- 22 55 ns V DD = 250 V, = 8.0 A, t r Turn-On Rise Time R G = 25 Ω -- 65 140 ns t d(off) Turn-Off Delay Time -- 125 260 ns t f Turn-Off Fall Time (Note 4, 5) -- 75 160 ns Q g Total Gate Charge = 400 V, = 8.0 A, -- 41 53 nc Q gs Gate-Source Charge = 10 V -- 6.5 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 17 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 8.0 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 8.0 A -- -- 1.4 V t rr Reverse Recovery Time = 0 V, I S = 8.0 A, -- 390 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 4.2 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.0mH, I AS = 8.0A, V DD = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 8.0A, di/dt 200A/µs, V DD BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
Typical Characteristics 10 1 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 10 1 150 o C 25 o C 10 1, Drain-Source Voltage [V] 1. 250µ s Pulse Test 2. T C = 25-55 o C 1. = 40V 2. 250µ s Pulse Test 2 4 6 8 10, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.0 R DS(ON) [Ω ], Drain-Source On-Resistance 2.5 2.0 1.5 1.0 = 10V = 20V Note : T = 25 J R, Reverse Drain Current [A] 10 1 150 25 Notes : 1. = 0V 2. 250µs Pulse Test 0.5 0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V SD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitance [pf] 3000 2500 2000 1500 1000 500 C iss C oss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 12 10 8 6 4 2 = 100V = 250V = 400V Note : I = 8.0 A D 0 10 1, Drain-Source Voltage [V] 0 0 5 10 15 20 25 30 35 40 45 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 Notes : 1. = 0 V 2. = 250 µa R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. = 4.0 A 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 2 Operation in This Area is Limited by R DS(on) 10 2 Operation in This Area is Limited by R DS(on) 10 1 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 ms DC 10 µs 100 µs 1 ms 10-2 10 1 10 2 10 3, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for IRF840B 10 1 10-2 Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 ms DC 100 µs 1 ms 10 ms 10 1 10 2 10 3, Drain-Source Voltage [V] Figure 9-2. Maximum Safe Operating Area for IRFS840B 10 8 6 4 2 0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 10. Maximum Drain Current vs Case Temperature
Typical Characteristics (Continued) Z θ JC (t), Thermal Response 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z θ JC (t) = 0.93 /W Max. 2. Duty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10 1 t 1, Square Wave Pulse Duration [sec] Figure 11-1. Transient Thermal Response Curve for IRF840B D=0.5 Z θ JC (t), Thermal Response 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z θ JC (t) = 2.86 /W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-2 10-5 10-4 10-3 10-2 10 1 t 1, Square Wave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for IRFS840B
12V 200nF 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT 10V Q g Q gs Q gd 3mA DUT Charge Resistive Switching Test Circuit & Waveforms R L 90% R G V DD 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- 1 LI 2 2 AS BS -------------------- BS -V DD BS I AS R G V DD (t) 10V DUT V DD (t) t p t p Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I SD L Driver R G Same Type as DUT V DD dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop
Mechanical Dimensions TO - 220 Dimensions in Millimeters
Package Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (7.00) (0.70) 15.80 ±0.20 6.68 ±0.20 (1.00x45 ) 15.87 ±0.20 9.75 ±0.30 MAX1.47 0.80 ±0.10 (30 ) 0.35 ±0.10 #1 0.50 +0.10 0.05 2.76 ±0.20 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 Dimensions in Millimeters
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