l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G HEXFET Power MOSFET D S PD - 94005B IRF630N IRF630NS IRF630NL V DSS = 200V R DS(on) = 0.30Ω I D = 9.3A The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D 2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF630NL) is available for lowprofile application. Absolute Maximum Ratings TO-220AB IRF630N D 2 Pak IRF630NS TO-262 IRF630NL Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ 10V 9.3 I D @ T C = 100 C Continuous Drain Current, V GS @ 10V 6.5 A I DM Pulsed Drain Current 37 P D @T C = 25 C Power Dissipation 82 W Linear Derating Factor 0.5 W/ C V GS Gate-to-Source Voltage ±20 V E AS Single Pulse Avalanche Energy 94 mj I AR Avalanche Current 9.3 A E AR Repetitive Avalanche Energy 8.2 mj dv/dt Peak Diode Recovery dv/dt 8.1 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf in (1.1N m) www.irf.com 1 10/08/04
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 200 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.26 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 0.30 Ω V GS = 10V, I D = 5.4A ƒ V GS(th) Gate Threshold Voltage 2.0 4.0 V V DS = V GS, I D = 250µA g fs Forward Transconductance 4.9 S V DS = 50V, I D = 5.4A ƒ I DSS Drain-to-Source Leakage Current 25 V µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 100 V GS = 20V na Gate-to-Source Reverse Leakage -100 V GS = -20V Q g Total Gate Charge 35 I D = 5.4A Q gs Gate-to-Source Charge 6.5 nc V DS = 160V Q gd Gate-to-Drain ("Miller") Charge 17 V GS = 10V ƒ t d(on) Turn-On Delay Time 7.9 V DD = 100V t r Rise Time 14 I D = 5.4A ns t d(off) Turn-Off Delay Time 27 R G = 13Ω t f Fall Time 15 R D = 18Ω ƒ Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 575 V GS = 0V C oss Output Capacitance 89 V DS = 25V C rss Reverse Transfer Capacitance 25 pf ƒ = 1.0MHz D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 9.3 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 37 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 5.4A, V GS = 0V ƒ t rr Reverse Recovery Time 117 176 ns T J = 25 C, I F = 5.4A Q rr Reverse Recovery Charge 542 813 nc di/dt = 100A/µs ƒ t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.83 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 R θja Junction-to-Ambient (PCB mount) 40 www.irf.com 2
I D, Drain-to-Source Current (A) 100 10 1 0.1 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, Drain-to-Source Current (A) 100 10 1 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH T J = 175 C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 100 10 1 T J = 175 C T J = 25 C V DS= 50V 20µs PULSE WIDTH 0.1 4.0 5.0 6.0 7.0 8.0 9.0 10.0 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 3.5 I D = 9.3A 3.0 2.5 2.0 1.5 1.0 0.5 V GS= 10V 0.0-60 -40-20 0 20 40 60 80 100 120 140 160 180 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance(pF) IRF630N/S/L 1200 1000 800 600 400 200 Ciss Coss Crss V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd V GS, Gate-to-Source Voltage (V) 16 12 8 4 I D = 5.4A V DS= 160V V DS= 100V V DS= 40V 0 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 0 0 5 10 15 20 25 30 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) 100 10 1 T J = 175 C T J = 25 C V GS= 0 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 1000 100 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms 1 10ms TC = 25 C TJ = 175 C Single Pulse 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage www.irf.com 4
I D, Drain Current (A) I D, Drain Current (A) 12 12 9 9 6 6 3 3 R D V DS V GS D.U.T. R G 10V Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% V - DD 0 0 25 50 75 100 125 150 175 25 50 T 75 100 125 150 175 C, Case Temperature ( C) T C, Case Temperature ( C) 10% V GS t d(on) t r t d(off) t f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thjc ) 1 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 0.01 2. Peak T J= P DM x Z thjc TC 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
15V V DS L DRIVER R G D.U.T IAS - V DD A 20V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS tp E AS, Single Pulse Avalanche Energy (mj) 200 150 100 50 I D TOP 2.2A 3.8A BOTTOM 5.4A 0 25 50 75 100 125 150 175 Starting T, Junction Temperature ( J C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF 10 V Q GS Q GD D.U.T. V - DS V GS V G 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com 6
Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =10V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs www.irf.com 7
TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) - A - 4.69 (.185) 4.20 (.165) - B - 1.32 (.052) 1.22 (.048) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1 2 3 4 6.47 (.255) 6.10 (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 1- GATE 2 - DRAIN 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASS EMB LED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTE RNAT IONAL RECTIFIER LOGO AS S E MB L Y LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WE EK 19 LINE C www.irf.com 8
D 2 Pak Package Outline Dimensions are shown in millimeters (inches) IRF630N/S/L D 2 Pak Part Marking Information T HIS IS AN IRF530S WITH LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" Note: "P" in as sembly line pos ition indicates "L ead-free" OR INTERNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L INTERNAT IONAL RECTIF IER LOGO ASSEMBLY LOT CODE F530S PART NUMBER DATE CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE www.irf.com 9
TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line pos ition indicates "L ead-f ree" OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE www.irf.com 10
D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) 10.90 (.429) 10.70 (.421) 11.60 (.457) 11.40 (.449) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 6.5mH R G = 25Ω, I AS = 5.4A. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 ƒ Pulse width 400µs; duty cycle 2%. This is only applied to TO-220AB package. This is applied to D 2 Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. I SD 5.4A, di/dt 280A/µs, V DD V (BR)DSS, T J 175 C. TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the automotive [Q101] (IRF630N) & industrial market (IRF630NS/L). Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 www.irf.com 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/