Features High Speed Switching, t rr < ns @ I F = 3A High Reverse Voltage and High Reliability RoHS compliant Applications General Purpose Switching Mode Power Supply Boost Diode in continuous mode power factor corrections Power switching circuits STEALTH TM October 27 II Rectifier 3A, 6V STEALTH TM II Rectifier The is STEALTH TM II rectifier with soft recovery characteristics. It is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. tm Pin Assigments TO222L. Cathode 2. Anode. Cathode 2. Anode Absolute Maximum Ratings unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage 6 V V RWM Working Peak Reverse Voltage 6 V V R DC Blocking Voltage 6 V I F(AV) Average Rectified Forward Current @ = 3 o C 3 A I FSM Nonrepetitive Peak Surge Current 6Hz Single HalfSine Wave 3 A T J, T STG Operating and Storage Temperature Range 65 to +5 o C Thermal Characteristics Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case. o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F3S6S TU TO222L 5 27 Fairchild Semiconductor Corporation Rev. A
Electrical Characteristics unless otherwise noted V FM I RM Symbol Parameter Min. Typ. Max. Units I F = 3A I F = 3A V R = 6V V R = 6V t rr I F = A, di/dt = A/µs, V R = 3V 25 35 ns t rr I rr S factor Q rr I F = 3A, di/dt = 2A/µs, V R = 39V = 25o C t rr I rr S factor I F = 3A, di/dt = 2A/µs, V R = 39V = 25 C Q rr nc W AVL Avalanche Energy ( L = mh) 2 mj Notes: : Pulse: Test Pulse width = 3µs, Duty Cycle = 2% 2..6 28 2.4.9 34 75 6.3.9 236 2.6 5 V µa ns A nc ns A Test Circuit and Waveforms Rev. A 2
Typical Performance Characteristics Figure. Typical Forward Voltage Drop vs. Forward Current 2 Figure 2. Typical Reverse Current vs. Reverse Voltage = 25 o C Forward Current, I F 25 o C 75 o C Reverse Current, I R [µa]. = 75 o C 2 3 4 5 Forward Voltage, V F. 2 3 5 6 Reverse Voltage, V R Figure 3. Typical Junction Capacitance Capacitances, Cj [pf] 35 28 2 7 Typical Capacitance at V = 27 pf Reverse Recovery Time, t rr [ns] Figure 4. Typical Reverse Recovery Time vs. di/dt 8 6 = 75 o C. Reverse Voltage, V R Figure 5. Typical Reverse Recovery Current vs. di/dt 2 5 2 25 3 di/dt [A/µs] Figure 6. Forward Current Derating Curve 7 Reverse Recovery Current, I rr 8 6 4 2 = 25 o C = 75 o C Average Forward Current, I F(AV) 6 5 3 2 5 2 25 3 di/dt [A/µs] 25 5 75 25 5 Case temperature, [ o C] Rev. A 3
Mechanical Dimensions TO222L Dimensions in Millimeters Rev. A 4
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