Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave. Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case 1.

Similar documents
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave. Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case 7

FFH60UP60S, FFH60UP60S3

FFH60UP40S, FFH60UP40S3

FFD08S60S_F085. Features. FFD08S60S_F085 Stealth 2 Rectifier. 8A, 600V Stealth2 Rectifier. Absolute Maximum Ratings T C = 25 C unless otherwise noted

FFPF30UA60S UItrafast Rectifier

October 2008 SuperFET TM FFB10UP20S Ultrafast Recovery Power Rectifier. Applications

FFA60UA60DN UItrafast Rectifier

FFH60UP60S, FFH60UP60S3

FFA30UP20DN Ultrafast Recovery Power Rectifier

FFA60UP30DN Ultrafast Recovery Power Rectifier

FFPF20UP20DP Ultrafast Recovery Power Rectifier

FDP V N-Channel PowerTrench MOSFET

FQA11N90C_F V N-Channel MOSFET

RHRP A, 600V Hyperfast Diodes

FDP V N-Channel PowerTrench MOSFET

Description. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 60 V V GSS Gate to Source Voltage ±20 V

MMBT2369 / PN2369 NPN Switching Transistor

FJA4310 NPN Epitaxial Silicon Transistor

FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mΩ Description

FQH8N100C 1000V N-Channel MOSFET

Data Sheet January Features. Packaging

FGH40N120AN 1200V NPT IGBT

RHRP1540, RHRP A, 400 V V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

FDMJ1032C. Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ

RURD4120, RURD4120S. Features. 4A, 1200V Ultrafast Diodes. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002

Features. 6A, 600V Hyperfast Diodes. Applications. Ordering Information. Packaging. Symbol. Data Sheet May 2013

KSD882 NPN Epitaxial Silicon Transistor

RHRG A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FDP2N50 FDP2N

FJPF13009 NPN Silicon Transistor

RHRG A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

2N7002DW N-Channel Enhancement Mode Field Effect Transistor. Symbol Parameter Value Units. Symbol Parameter Value Units

RURG3020CC. 30 A, 200 V, Ultrafast Dual Diode. Features. Description. Applications. Packaging. Ordering Information. Symbol. Data Sheet November 2013

BAV23S Small Signal Diode

Data Sheet January Features. Packaging. 30 A (T C = 145 o C) Repetitive Peak Surge Current... I FRM

RURG Features. 80A, 1000V Ultrafast Diode. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002

2SA1962/FJA4213 PNP Epitaxial Silicon Transistor

RHRP860_F085. Features. 8A,600V Hyperfast Diodes. Applications. Ordering Information. Packaging. Symbol K. Data Sheet September 2011

FDP150N10 N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features

FYP2010DN Schottky Barrier Rectifier

Description. TO-220F-2L 1. Cathode 2. Anode 1. Cathode 2. Anode

ISL9R860P2, ISL9R860S2, ISL9R860S3ST

FFP08H60S 8 A, 600 V, Hyperfast II Diode

2SC5242/FJA4313 NPN Epitaxial Silicon Transistor

TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor

FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features

Features. Q1: N-Channel 7.0A, 30V. R DS(on) Q2: P-Channel. -5A, -30V R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q1 Q2 Units

FFPF60B150DS. 120 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +150 C

FDZ V N-Channel PowerTrench BGA MOSFET

TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor

Features. Packaging. 12 A Square Wave, 20 khz Nonrepetitive Peak Surge Current... I FSM

FFD10UP20S 10 A, 200 V, Ultrafast Diode

MUR840, MUR860, RURP840, RURP860

2SC3503/KSC3503 NPN Epitaxial Silicon Transistor

ISL9R3060G2, ISL9R3060P2

FDZ2554P. FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power PowerTrench BGA MOSFET

FDP75N08A 75V N-Channel MOSFET

FDC6901L Integrated Load Switch

LL4148 Small Signal Diode

FDP79N15 / FDPF79N15 150V N-Channel MOSFET

MJD44H11 NPN Epitaxial Silicon Transistor

ANODE 2 CATHODE ANODE 1

Absolute Maximum Ratings T a = 25 C unless otherwise noted Symbol Parameter Value Unit

1N4934-1N4937 Fast Rectifiers

Description. 300 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +175 C

Description. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

FDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features

MM74HC Stage Binary Counter

2SA1381/KSA1381 PNP Epitaxial Silicon Transistor

BAT54HT1G Schottky Barrier Diodes

FGH60N60SFD 600V, 60A Field Stop IGBT

Description ANODE CATHODE

Features. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units

FQPF12N60CT 600V N-Channel MOSFET

Description. Symbol Parameter FDAF69N25 Unit. (Note 2) Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

FDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features

TO Emitter 2. Collector 3. Base

FQA8N100C 1000V N-Channel MOSFET

FQB7N65C 650V N-Channel MOSFET

DM74ALS257, DM74ALS258 3-STATE Quad 1-of-2-Line Data Selector/Multiplexer

UniFET TM. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. Description. Features. Absolute Maximum Ratings

FGP5N60UFD 600V, 5A Field Stop IGBT

Description. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

FQA11N90 900V N-Channel MOSFET

ISL9R860P2, ISL9R860S3ST


FDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15mΩ Features

1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode

74AC20 Dual 4-Input NAND Gate

KSD1621 NPN Epitaxial Silicon Transistor

FDC610PZ P-Channel PowerTrench MOSFET

FDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features.

Features. TO-220F IRFS Series

BAV103 High Voltage, General Purpose Diode

FDB V N-Channel PowerTrench MOSFET

FGPF70N33BT 330V, 70A PDP IGBT

FDG901D Slew Rate Control IC for P-Channel MOSFETs

KSA473 PNP Epitaxial Silicon Transistor

Applications. Symbol Parameter Ratings Units V DS Drain to Source Voltage 100 V V GS Gate to Source Voltage ±20 V

74AC10, 74ACT10 Triple 3-Input NAND Gate

Transcription:

Features High Speed Switching, t rr < ns @ I F = 3A High Reverse Voltage and High Reliability RoHS compliant Applications General Purpose Switching Mode Power Supply Boost Diode in continuous mode power factor corrections Power switching circuits STEALTH TM October 27 II Rectifier 3A, 6V STEALTH TM II Rectifier The is STEALTH TM II rectifier with soft recovery characteristics. It is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. tm Pin Assigments TO222L. Cathode 2. Anode. Cathode 2. Anode Absolute Maximum Ratings unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage 6 V V RWM Working Peak Reverse Voltage 6 V V R DC Blocking Voltage 6 V I F(AV) Average Rectified Forward Current @ = 3 o C 3 A I FSM Nonrepetitive Peak Surge Current 6Hz Single HalfSine Wave 3 A T J, T STG Operating and Storage Temperature Range 65 to +5 o C Thermal Characteristics Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case. o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F3S6S TU TO222L 5 27 Fairchild Semiconductor Corporation Rev. A

Electrical Characteristics unless otherwise noted V FM I RM Symbol Parameter Min. Typ. Max. Units I F = 3A I F = 3A V R = 6V V R = 6V t rr I F = A, di/dt = A/µs, V R = 3V 25 35 ns t rr I rr S factor Q rr I F = 3A, di/dt = 2A/µs, V R = 39V = 25o C t rr I rr S factor I F = 3A, di/dt = 2A/µs, V R = 39V = 25 C Q rr nc W AVL Avalanche Energy ( L = mh) 2 mj Notes: : Pulse: Test Pulse width = 3µs, Duty Cycle = 2% 2..6 28 2.4.9 34 75 6.3.9 236 2.6 5 V µa ns A nc ns A Test Circuit and Waveforms Rev. A 2

Typical Performance Characteristics Figure. Typical Forward Voltage Drop vs. Forward Current 2 Figure 2. Typical Reverse Current vs. Reverse Voltage = 25 o C Forward Current, I F 25 o C 75 o C Reverse Current, I R [µa]. = 75 o C 2 3 4 5 Forward Voltage, V F. 2 3 5 6 Reverse Voltage, V R Figure 3. Typical Junction Capacitance Capacitances, Cj [pf] 35 28 2 7 Typical Capacitance at V = 27 pf Reverse Recovery Time, t rr [ns] Figure 4. Typical Reverse Recovery Time vs. di/dt 8 6 = 75 o C. Reverse Voltage, V R Figure 5. Typical Reverse Recovery Current vs. di/dt 2 5 2 25 3 di/dt [A/µs] Figure 6. Forward Current Derating Curve 7 Reverse Recovery Current, I rr 8 6 4 2 = 25 o C = 75 o C Average Forward Current, I F(AV) 6 5 3 2 5 2 25 3 di/dt [A/µs] 25 5 75 25 5 Case temperature, [ o C] Rev. A 3

Mechanical Dimensions TO222L Dimensions in Millimeters Rev. A 4

TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FPS FRFET Global Power Resource SM Green FPS Green FPS eseries GTO ilo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionSPM OPTOLOGIC OPTOPLANAR PDPSPM Power22 Power247 POWEREDGE PowerSPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM STEALTH SuperFET SuperSOT 3 SuperSOT 6 SuperSOT 8 SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC UniFET VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms tm This datasheet contains the design specifications for product Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative or In Design First Production Full Production Not In Production development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I3 Rev. A 5