Monolithic Dual SPST CMOS Analog Switch

Similar documents
High-Speed Quad Monolithic SPST CMOS Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch

Improved Quad CMOS Analog Switches

Low-Voltage Single-Supply, SPDT Analog Switch in SC-70

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch

CMOS Analog Switches (Obsolete for non-hermetic. Use DG304B Series as pin-for-pin replacements.)

Precision Quad SPDT Analog Switch

DG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS

FEATURES APPLICATIONS

DG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS

FEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number

DG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES

DG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS

Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability

Low Voltage, Dual SPDT Analog Switch with Charge Pump

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

High-Speed Quad Monolithic SPST CMOS Analog Switch. Features Benefits Applications. Fast Settling Times Reduced Switching Glitches High Precision

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers

Dual P-Channel 2.5-V (G-S) MOSFET

High-Speed Quad Monolithic SPST CMOS Analog Switch. Features Benefits Applications. Fast Settling Times Reduced Switching Glitches High Precision

N-Channel 40-V (D-S), 175 C MOSFET

Dual SPDT Analog Switch

DG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix.

P-Channel 40 V (D-S), 175 C MOSFET

Precision Monolithic Quad SPST CMOS Analog Switches

P-Channel 2.5-V (G-S) MOSFET

0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch

0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch

N-Channel 30-V (D-S) MOSFET

0.45, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability

DG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS

N-Channel 20 V (D-S) MOSFET

Power MOSFET FEATURES. IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 60 V (D-S) MOSFET

SUD40N06-25L. N-Channel 60-V (D-S), 175 C MOSFET, Logic Level. Vishay Siliconix FEATURES PRODUCT SUMMARY

N-Channel 60-V (D-S) MOSFET

High-Speed, Low-Glitch D/CMOS Analog Switches

FEATURES BENEFITS APPLICATIONS. PARAMETER LIMIT UNIT Reference to GND V to +6 IN, COM, NC, NO a -0.3 to (V )

P-Channel 30-V (D-S), MOSFET

High-Speed Quad Monolithic SPST CMOS Analog Switch

P-Channel Enhancement-Mode MOSFET Transistors. I D(on) Min (ma) r DS(on) Max ( ) 3N to N to

2N4416/2N4416A/SST4416. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C

Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET

P-Channel 100 V (D-S) MOSFET

N- and P-Channel 2.5-V (G-S) MOSFET

3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers

Single 8-Ch/Differential 4-Ch CMOS Analog Multiplexers (Obsolete for non-hermetic. Use DG408/409 as pin-for-pin replacements.)

Low Power, High Voltage SPST Analog Switches

U290/291. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION ABSOLUTE MAXIMUM RATINGS

N- and P-Channel 30-V (D-S) MOSFET

Precision Monolithic Quad SPST CMOS Analog Switches

16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers

P-Channel 2.5-V (G-S) MOSFET

0.5 pc Charge Injection, 100 pa Leakage, Dual SPDT Analog Switch

P-Channel 1.8 V (G-S) MOSFET

Power MOSFET FEATURES. Note * Pb containing terminations are not RoHS compliant, exemptions may apply DESCRIPTION. IRFD113PbF SiHFD113-E3

Dual N-Channel 30 V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET

N-Channel 2.5-V (G-S) Battery Switch, ESD Protection

P-Channel 20-V (D-S) MOSFET with Schottky Diode

FEATURES DG721, TDFN-8 COM 2 7 IN 1 NO 1 1 NO 2. Top View. Device Marking for MSOP-8: 721

P-Channel 8-V (D-S) MOSFET

Complementary N- and P-Channel 40-V (D-S) MOSFET

N-Channel 100-V (D-S) 175 C MOSFET

Complementary 20 V (D-S) MOSFET

Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET

Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET

Bi-Directional P-Channel MOSFET/Power Switch

N- and P-Channel 1.8 V (G-S) MOSFET

FEATURES APPLICATIONS. Switches are shown for a Logic 0 Input

P-Channel 30-V (D-S) MOSFET

0.3 pc Charge Injection, 100 pa Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch

N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET

700 MHz, -3 db Bandwidth; Single SPDT Analog Switch

P-Channel 40 V (D-S) 175 C MOSFET

N-Channel 30-V (D-S) MOSFET with Sense Terminal

Power MOSFET FEATURES. IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120

Power MOSFET. IRFP450PbF SiHFP450-E3 IRFP450 SiHFP450. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20

Dual P-Channel 30-V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET

Si9986. Buffered H-Bridge. Vishay Siliconix. RoHS* COMPLIANT DESCRIPTION FEATURES APPLICATIONS

N- and P-Channel 20-V (D-S) MOSFET

Dual N-Channel 20 V (D-S) MOSFET

Power MOSFET. IRFD020PbF SiHFD020-E3 IRFD020 SiHFD020

P-Channel 20-V (D-S) MOSFET

Low-Power, High-Speed CMOS Analog Switches

J/SST/U308 Series. N-Channel JFETs. Vishay Siliconix J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS

Power MOSFET FEATURES. IRL530PbF SiHL530-E3 IRL530 SiHL530 T C = 25 C. V GS at 5.0 V

Dual P-Channel 60-V (D-S) 175 MOSFET

Dual P-Channel 20-V (D-S) MOSFET

Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay

Dual N-Channel 20-V (D-S) MOSFET

Transcription:

Monolithic Dual SPST CMOS Analog Switch DG00B DESCRIPTION The DG00B is a dual, single-pole, single-throw analog switch designed to provide general purpose switching of analog signals. This device is ideally suited for designs requiring a wide analog voltage range coupled with low on-resistance. The DG00B is designed on improved PLUS-40 CMOS process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to 30 V peak-to-peak when off. In the on condition, this bi-directional switch introduces no offset voltage of its own. FEATURES ± 15 V Input Signal Range 44 V Maximum Supply Ranges On-Resistance: 45 Ω TTL and CMOS Compatibility BENEFITS Wide Dynamic Range Simple Interfacing Reduced External Component Count APPLICATIONS Servo Control Switching Programmable Gain Amplifiers Audio Switching Programmable Filters Pb-free Available RoHS* COMPLIANT FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Plastic Dip IN 1 14 IN 1 NC 13 NC 3 1 Substrate NC 4 11 NC S 5 10 S 1 D 6 9 D 1 V 7 8 NC Top View TRUTH TABLE Logic Switch 0 ON 1 OFF Logic "0" 0.8 V Logic "1".4 V ORDERING INFORMATION Temp Range Package Part Number - 40 to 85 C 14-Pin Plastic DIP DG00BDJ DG00BDJ-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply 1

ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Limit Unit to 44 to 5 V Digital Inputs a () - V to () + V,, V D or 30 ma, whichever occurs first Current (Any Terminal) Continuous 30 Current S or D (Pulsed at 1 ms, 10 % Duty Cycle Max) ma Storage Temperature - 65 to 150 C Power Dissipation (Package) b 14-Pin Plastic DIP c 470 mw Notes: a. Signals on S X, D X, or IN X exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mw/ C above 5 C. SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V L S X IN X Level Shift/ Drive D X Figure 1.

SPECIFICATIONS a Test Conditions Unless Otherwise Specified Limits - 40 to 85 C Parameter Symbol = 15 V, = V IN =.4 V, 0.8 V f Temp b Min c Typ d Max c Unit Analog Switch Analog Signal Range e V ANALOG - 15 15 V Drain-Source On-Resistance r DS(on) V D = ± 10 V, I S = - 1 ma Ω Source Off Leakage Current I S(off) = ± 14 V, V D = 14 V Drain Off Leakage Current I D(off) V D = ± 14 V, = 14 V Channel On Leakage Current f I D(on) = V D = ± 14 V Digital Control Input Current with Input Voltage High I INH V IN =.4 V V IN = 15 V Input Current with Input Voltage Low I INL V IN = 0 V Dynamic Characteristics Turn-On Time t ON See Switching Time Test Circuit Notes: a. Refer to PROCESS OPTION FLOWCHART. b. = 5 C, = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. - - - - - - 00-0.5-1 - 0.5-1 45 85 ± 0.01 ± 0.01 ± 0.1 0.0009 00 0.005 0.5 1-0.0015 300 0 ns Turn-Off Time t OFF 00 45 Charge Injection Q C L = 0 pf, R g = 0 Ω, V g = 0 V 1 pc Source Off Capacitance C S(off) f = 140 khz = 0 V 5 Drain Off Capacitance C D(off) V IN = 5 V V D = 0 V 5 pf C D(on) + Channel-On Capacitance V C S = V D = 0 V, V IN = 0 V 16 S(on) Off Isolation OIRR V IN = 5 V, = 75 Ω 90 Crosstalk (Channel-to-Channel) X TALK = V, f = 1 MHz 95 Power Supplies Positive Supply Current I+ Both Channels On or Off 50 Negative Supply Current I- V IN = 0 V and 5.0 V - 10 ± ± na µa db µa Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3

TYPICAL CHARACTERISTICS 5 C, unless otherwise noted r DS(on) - Drain-Source On-Resistance (Ω) 110 90 80 70 60 50 40 30 0 ± 5 V ± 10 V ± 15 V ± 0 V r DS(on) - 90 80 70 60 50 40 30 0 10 = 15 V = 15 C 85 C 5 C - 55 C 10-0 - 16-1 - 8-4 0 4 8 1 16 0 V D - Drain Voltage (V) r DS(on) vs. V D and Power Supply Voltages 0-15 -10-5 0 5 10 15 V D - Drain Voltage (V) r DS(on) vs. V D and Temperature 1 na = 15 V =, V D = ± 14 V 40 30 = V = - V T A = 5 C I S,I D - Current pa 10 pa I S(off), I D(off) I S,I D - Current (pa) 0 10 0-10 - 0 I D(on) I S(off), I D(off) - 30 1 pa -55-35 -15 5 5 45 65 85 105 15 Temperature ( C) Leakage Current vs. Temperature - 40-0 -15-10 -5 0 5 10 15 0 Leakage Currents vs. Analog Voltage TEST CIRCUITS is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform. Logic Input 3 V 0 V 50 % t r < 0 ns t f < 0 ns = + 5 V S D Switch Input Switch Output 90 % t OFF 3 V IN 1 kω C L 35 pf t ON = + r DS(on) Figure. Switching Time 4

TEST CIRCUITS Δ R g S D V g 3 V IN C L 0 pf IN X ON OFF ON Δ = measured voltage error due to charge injection The charge injection in coulombs is ΔQ = C L x Δ Figure 3. Charge Injection C S D R g = 50 Ω 5 V IN C Off Isolation = 0 log Figure 4. Off Isolation C S 1 D 1 R g = 50 Ω 0 V IN 1 50 Ω NC S D 0 V IN C X TALK = 0 log C = RF bypass Figure 5. Channel-to-Channel Crosstalk maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?71357. 5

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 90 Revision: 18-Jul-08 1