VS-8EWS8S-M3, VS-8EWSS-M3 High Voltage Surface Mountable Input Rectifier Diode, 8 TO-5 (D-PK) 3 Base cathode + 3 node - - node PRODUT SUMMRY Package TO-5 (D-PK) I F(V) 8 V R 8 V, V V F at I F. V I FSM 5 T J max. 5 Diode variation Single die FETURES Glass passivated pellet chip junction Meets MSL level, per J-STD-, LF maximum peak of 6 Material categorization: for definitions of compliance please see www.vishay.com/doc?999 PPLITIONS Input rectification switches and output rectifiers which are available in identical package outlines DESRIPTION The VS-8EWS..S-M3 rectifier high voltage series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 5 junction temperature. The high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability. OUTPUT URRENT IN TYPIL PPLITIONS PPLITIONS SINGLE-PHSE BRIDGE THREE-PHSE BRIDGE UNITS NEM FR- or G glass fabric-based epoxy with oz. ( μm) copper..6 luminum IMS, R th = 5 /W.5.8 luminum IMS with heatsink, R th = 5 /W 5.5 6.5 Note T = 55, T J = 5, footprint 3 mm MJOR RTINGS ND HRTERISTIS SYMBOL HRTERISTIS VLUES UNITS I F(V) Sinusoidal waveform 8 V RRM 8/ V I FSM 5 V F 8, T J = 5. V T J -55 to +5 VOLTGE RTINGS PRT NUMBER V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V VS-8EWS8S-M3 8 9 VS-8EWSS-M3 3 I RRM T 5 m.5 Revision: 9-Jan-7 Document Number: 93383 THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-8EWS8S-M3, VS-8EWSS-M3 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum average forward current I F(V) T = 5, 8 conduction half sine wave 8 Maximum peak one cycle ms sine pulse, rated V RRM applied 5 I FSM non-repetitive surge current ms sine pulse, no voltage reapplied 5 ms sine pulse, rated V RRM applied 78 Maximum I t for fusing I t ms sine pulse, no voltage reapplied s Maximum I t for fusing I t t =. ms to ms, no voltage reapplied s ELETRIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum forward voltage drop V FM 8, T J = 5. V Forward slope resistance r t m T J = 5 Threshold voltage V F(TO).8 V T J = 5.5 Maximum reverse leakage current I RM V R = Rated V RRM m T J = 5.5 THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -55 to +5 Maximum thermal resistance, junction to case R thj D operation.5 Typical thermal resistance, junction to ambient (PB mount) R () thj 6 /W pproximate weight Marking device ase style TO-5 (D-PK) Note () When mounted on " square (65 mm ) PB of FR- or G- material oz. ( μm) copper /W For recommended footprint and soldering techniques refer to application note #N-99 g.3 oz. 8EWS8S 8EWSS Revision: 9-Jan-7 Document Number: 93383 THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-8EWS8S-M3, VS-8EWSS-M3 Maximum llowable ase Temperature ( ) 5 3 9 8 3 6 R thj (D) =.5 /W 9 onduction angle 8 6 8 Maximum verage Forward Power Loss (W) 8 6 8 6 D 8 9 6 3 RMS limit onduction period T J = 5 6 8 6 verage Forward urrent () verage Forward urrent () Fig. - urrent Rating haracteristics Fig. - Forward Power Loss haracteristics Maximum llowable ase Temperature ( ) 5 3 9 3 6 R thj (D) =.5 /W 9 onduction period 8 D 6 8 6 8 Peak Half Sine Wave Forward urrent () 3 t any rated load condition and with rated V rrm applied following surge. Initial T J = 5 at 6 Hz.83 s at 5 Hz. s 9 8 7 6 5 VS-8EWS8S.. Series 3 verage Forward urrent () Fig. - urrent Rating haracteristics Number of Equal mplitude Half ycle urrent Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge urrent Maximum verage Forward Power Loss (W) 6 8 6 8 9 6 3 RMS limit onduction angle T J = 5 6 8 verage Forward urrent () Fig. 3 - Forward Power Loss haracteristics Peak Half Sine Wave Forward urrent () 6 8 6 Maximum non-repetitive surge current versus pulse train duration. Initial T J = T J max. No voltage reapplied Rated V rrm reapplied VS-8EWS8S.. Series.. Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge urrent Revision: 9-Jan-7 3 Document Number: 93383 THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-8EWS8S-M3, VS-8EWSS-M3 Instantaneous Forward urrent () T J = 5 T J = 5.5..5..5 3. Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop haracteristics Z thj - Transient Thermal Impedance ( /W) Single pulse D =.5 D =.33 D =.5 D =.7 D =.8 Steady state value (D operation)..... Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thj haracteristics Revision: 9-Jan-7 Document Number: 93383 THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-8EWS8S-M3, VS-8EWSS-M3 ORDERING INFORMTION TBLE Device code VS- 8 E W S S TR -M3 3 5 6 7 8 9 - product - urrent rating (8 = 8 ) 3 - ircuit configuration: E = single diode - Package: W = D-PK 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage code x = V RRM 7 - S = surface mountable 8 - TR = tape and reel 9 TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 8 = 8 V = V - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION VS-8EWS8S-M3 75 3 ntistatic plastic tubes VS-8EWS8STR-M3 3" diameter reel VS-8EWS8STRL-M3 3 3 3" diameter reel VS-8EWS8STRR-M3 3 3 3" diameter reel VS-8EWSS-M3 75 3 ntistatic plastic tubes VS-8EWSSTR-M3 3" diameter reel VS-8EWSSTRL-M3 3 3 3" diameter reel VS-8EWSSTRR-M3 3 3 3" diameter reel Dimensions Part marking information Packaging information LINKS TO RELTED DOUMENTS www.vishay.com/doc?9567 www.vishay.com/doc?9576 www.vishay.com/doc?9533 Revision: 9-Jan-7 5 Document Number: 93383 THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
D-PK (TO-5) M Outline Dimensions DIMENSIONS in millimeters and inches E (5) Pad layout b3 (3). M B L3 (3) B D (5) 3 L c Seating plane H D E 3.88 (.).9 (.).65 (6.7).5 (6.3) () L5 b x e b. M B Lead tip Detail Detail Rotated 9 W Scale: : Gauge plane L c (L) L H (7) Seating plane.6 (.5).93 (.38).85 (.8).89 (.8) SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MX. MX. MX. MX. NOTES.8.39.86.9 e.9 BS.9 BS -.3 -.5 H 9...37. b.6.89.5.35 L..78.55.7 b.76..3.5 L.7 BS.8 REF. b3.95 5.6.95.5 3 L.5 BS. BS c.6.6.8. L3.89.7.35.5 3 c.6.89.8.35 L -. -. D 5.97 6..35.5 5 L5..5.5.6 D 5. -.5-3 E 6.35 6.73.5.65 5 5 5 E.3 -.7-3 5 35 5 35 Notes () Dimensioning and tolerancing as per SME Y.5M-99 () Lead dimension uncontrolled in L5 (3) Dimension D, E, L3 and b3 establish a minimum mounting surface for thermal pad () Section - dimension apply to the flat section of the lead between.3 and.5 mm (.5 and.") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed.7 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b and c applied to base metal only (7) Datum and B to be determined at datum plane H (8) Outline conforms to JEDE outline TO-5 Revision: -Jun-6 Document Number: 9567 THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
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