DATA SHEET SEMICONDUCTOR NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space and Component Count The package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. MAXIMUM RATINGS (TA = unless otherwise noted) Rating Symbol Value Unit PIN BASE (INPUT) MUN22 Series SOT2 (TO26AB) R R 2 2 H PIN COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) Collector-Base Voltage V CBO 5 Vdc Collector-Emitter Voltage V CEO 5 Vdc Collector Current I C madc Total Power Dissipation @ T A = (Note.) Derate above P D *246.5 mw C/W DEVICE MARKING AND RESISTOR VALUES Device Marking R(K) R2(K) MUN22 A8A MUN222 A8B 22 22 MUN22 A8C 47 47 MUN224 A8D 47 MUN225 A8E MUN226 A8F 4.7 MUN22 A8G.. MUN22 A8H 2.2 2.2 MUN222 A8J 4.7 4.7 A8K 4.7 47 MUN224 A8L 22 47 MUN225 A8M 2.2 47 MUN228 A8R 2.2 Packing Packing /Reel /Reel /Reel /Reel /Reel /Reel /Reel /Reel /Reel /Reel /Reel /Reel /Reel MUN224 A8U /Reel. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. http://www.yeashin.com REV.2 228
MUN22 Series THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance Junction-to-Ambient (Note.) R θja 58 C/W Operating and Storage Temperature Range T J,T stg 55 to +5 C Maximum Temperature for Soldering Purposes, Time in Solder Bath T L 26 C Sec ELECTRICAL CHARACTERISTICS (TA = unless otherwise noted) OFF CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (V CB = 5 V, I E = ) I CBO nadc Collector-Emitter Cutoff Current (V CE = 5 V, I B = ) I CEO 5 nadc Emitter-Base Cutoff Current MUN22 (V EB = 6. V, I C = ) MUN222 MUN22 MUN224 MUN225 MUN226 MUN22 MUN22 MUN222 MUN224 MUN225 MUN228 MUN224 I EBO Collector-Base Breakdown Voltage (I C = µa, I E = ) V (BR)CBO 5 Vdc Collector-Emitter Breakdown Voltage (Note 2.), (I C = 2. ma, I B = ) V (BR)CEO 5 Vdc.5..9.9 4. 2..5.8. 4.. madc ON CHARACTERISTICS (Note 2.) DC Current Gain MUN22 (V CE = V, I C = 5. ma) MUN222 MUN22 MUN224 MUN225 MUN226 MUN22 MUN22 MUN222 MUN224 MUN225 MUN228 MUN224 Collector-Emitter Saturation Voltage (I C = ma, I B =. ma) (I C = ma, I B = 5 ma) MUN22/MUN22 (I C = ma, I B = ma) MUN225/MUN226 MUN222//MUN224 MUN225/MUN228 2. Pulse Test: Pulse Width < µs, Duty Cycle < 2.%. h FE 5 6 8 8 6 6. 8. 5 8 8 8 6 6 6 4 4 5 5 5. 5 2 5 4 5 5 V CE(sat) 5 Vdc http://www.yeashin.com 2 REV.2 228
MUN22 Series ELECTRICAL CHARACTERISTICS (TA = unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note.) Output Voltage (on) (V CC = 5. V, V B = 2.5 V, R L =. k Ω MUN22 MUN222 MUN224 MUN225 MUN226 MUN22 MUN22 MUN222 MUN224 MUN225 MUN228 (V CC = 5. V, V B =.5 V, R L =. k Ω) MUN22 (V CC = 5. V, V B = 5. V, R L =. k Ω) MUN224 V OL Vdc Output Voltage (off) (V CC = 5. V, V B =.5 V, R L =. k Ω) (V CC = 5. V, V B =.5 V, R L =. k Ω ) MUN22 (V CC = 5. V, V B = 5 V, R L =. k Ω ) MUN225 MUN226 MUN228 V OH 4.9 Vdc Input Resistor MUN22 MUN222 MUN22 MUN224 MUN225 MUN226 MUN22 MUN22 MUN222 MUN224 MUN225 MUN228 MUN224 R 7. 5.4 2.9 7. 7...7.5.. 5.4.54.54 7 22 47 4.7. 2.2 4.7 4.7 22 2.2 2.2 28.6 6. 6.. 2.9 6. 6. 28.6 2.86 2.88 kω Resistor Ratio MUN22/MUN222/MUN22 MUN224 MUN225/MUN226/MUN228 MUN224 MUN22/MUN22/MUN222 MUN224 MUN225 R/R2.8.7.8.55.8.8....47.47.2 5.2.85.56.56. Pulse Test: Pulse Width < µs, Duty Cycle < 2.%. http://www.yeashin.com REV.2 228
MUN22 Series MUN22 PD, POWER DISSIPATION (MILLIWATTS) 25 2 5 5 RθJA= 6/W 5 5 5 TA, AMBIENT TEMPERATURE (5 C) Figure. Derating Curve VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = Figure 2. VCE(sat) vs. IC TA =. 2 4 6 8 hfe, DC CURRENT GAIN (NORMALIZED) VCE = V TA = 4 2 f = MHz le = A TA = 2 4 5 Figure. DC Current Gain Figure 4. Output Capcitance.. TA = VO = V TA =. 2 4 5 6 7 8 9 Figure 5. Output Current vs. Input Voltage. 2 4 5 Figure 6. Input Voltage vs. Output Current http://www.yeashin.com 4 REV.2 228
MUN22 Series MUN222 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = TA =. 2 4 6 8 hfe, DC CURRENT GAIN (NORMALIZED) VCE = V TA = IC, COLLECTOR CURRENT (ma Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain 4 2 f = MHz le = A TA = 2 4 5... TA = VO = 5 V 2 4 6 8 Figure 9. Output Capacitance Figure. Output Current vs. Input Voltage VO = V TA = Figure. Input Voltage vs. Output Current http://www.yeashin.com 5 REV.2 228
MUN22 Series MUN22 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS). IC/IB = TA =. 2 4 6 8 hfe, DC CURRENT GAIN (NORMALIZED) VCE = V TA = Figure 2. VCE(sat) vs. IC Figure. DC Current Gain.8.6.4 f = MHz le = A TA = 2 4 5.. TA = VO = 5 V. 2 4 6 8 Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage VO = V TA =. 2 4 5 Figure 6. Input Voltage vs. Output Current http://www.yeashin.com 6 REV.2 228
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = DEVICE CHARACTERISTICS MUN22 Series MUN224 TA =. 2 4 6 8 hfe, DC CURRENT GAIN (NORMALIZED) 25 2 5 5 TA = 2 4 6 8 5 2 4 5 6 7 8 9 Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain 4.5 2.5 2.5.5 f = MHz le = A TA = TA = VO = 5 V 2 4 6 8 5 2 25 5 4 45 5 Figure 9. Output Capacitance 2 4 6 8 Figure 2. Output Current vs. Input Voltage VO = V TA =. 2 4 5 Figure 2. Input Voltage vs. Output Current http://www.yeashin.com 7 REV.2 228
MUN22 Series MUN222 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = TA =. 4 8 2 6 2 24 28 Figure 22. VCE(sat) vs. IC hfe, DC CURRENT GAIN VCE = V TA = 25 5 75 25 Figure 2. DC Current Gain 6 5 4 2 f = MHz IE = A TA =. TA = VO = 5 V 2 4 5 6. 2 4 6 8 Figure 24. Output Capacitance Figure 25. Output Current vs. Input Voltage VO = V TA =. 2 Figure 26. Output Voltage vs. Input Current http://www.yeashin.com 8 REV.2 228
MUN22 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = TA =. 2 7 2 7 22 Figure 27. VCE(sat) vs. IC 27 2 hfe, DC CURRENT GAIN TA = VCE = V Figure 28. DC Current Gain 4.5 2.5 2.5.5 f = MHz IE = A TA = 2 4 5 6.. TA = VO = 5 V 2 4 6 8 Figure 29. Output Capacitance Figure. Output Current vs. Input Voltage VO = V TA =. 6 2 8 24 Figure. Input Voltage vs. Output Current http://www.yeashin.com 9 REV.2 228
MUN22 Series TYPICAL APPLICATIONS FOR NPN BRTs µ Figure 2. Level Shifter: Connects 2 or 24 Volt Circuits to Logic Figure. Open Collector Inverter: Inverts the Input Signal Figure 4. Inexpensive, Unregulated Current Source http://www.yeashin.com REV.2 228
PACKAGE OUTLINE & DIMENSIONS MUN22 Series V D A L 2 G H B C S K J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A.2.97 2.8.4 B.472.55.2.4 C.5.44.89. D.5.2.7.5 G.7.87.78 2.4 H.5.4.. J.4.7.85.77 K.4.285.5.69 L.5.4.89.2 S.8.9 2. 2.64 V.77.26.45.6.7.95.7.95.79 2..5.9..8 inches mm http://www.yeashin.com REV.2 228